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1. 发明授权

US5432067A Process for production of biotin using bacteria belonging to the genus sphingomonas 失效
标题翻译：使用属于鞘氨醇单胞菌属的细菌生产生物素的方法
公开(公告)号：US5432067A
公开(公告)日：1995-07-11
申请号：US111440
申请日：1993-08-25
申请人： Kazuo Kumagai , Misao Miki , Emiko Kawano , Satoshi Mitsuda
发明人： Kazuo Kumagai , Misao Miki , Emiko Kawano , Satoshi Mitsuda
IPC分类号： C12N1/20 , C12P17/18 , C12R1/01 , C12P1/04 , C12N1/12 , C12N11/18
CPC分类号： C12R1/01 , C12P17/186 , Y10S435/822
摘要： There is disclosed a process for the production of biotin, in which a culture of a microorganism of the genus Sphingomonas, having an ability to produce biotin, is prepared in a medium, and biotin produced and accumulated in the medium is collected. Also disclosed are microorganisms of the genus Sphingomonas, having an ability to produce biotin, which are useful for this production process of the present invention.
摘要翻译：公开了生产生物素的方法，其中在培养基中制备具有生产生物素能力的鞘氨醇单胞菌属微生物的培养物，收集培养基中产生和积累的生物素。还公开了具有生产生物素能力的鞘氨醇单胞菌属微生物，其可用于本发明的该生产方法。

2. 发明授权

US5395758A Process for production of amide compounds using agrobacterium radiobacter 失效
标题翻译：使用农杆菌的生产酰胺化合物的方法
公开(公告)号：US5395758A
公开(公告)日：1995-03-07
申请号：US54250
申请日：1993-04-30
申请人： Yoshiki Takashima , Kazuo Kumagai , Satoshi Mitsuda
发明人： Yoshiki Takashima , Kazuo Kumagai , Satoshi Mitsuda
IPC分类号： C12N1/20 , C12P13/02 , C12P17/12 , C12R1/01 , C12P13/00
CPC分类号： C12R1/01 , C12P13/02 , C12P17/12
摘要： There is disclosed a process for production of amide compounds which includes converting a nitrile compound into an amide compound using a cultured broth of bacterial cells, or bacterial cells or materials obtainable by treating bacterial cells, the bacterial cells being cells of a microorganism Agrobacterium radiobacter FERM BP-3843, having activity to convert nitrile compounds into corresponding amide compounds.
摘要翻译：公开了一种酰胺化合物的制造方法，其包括使用培养的细菌细胞培养液将腈化合物转化为酰胺化合物，或细菌细胞或通过处理细菌细胞获得的材料，所述细菌细胞为微生物农杆菌FERM BP-3843，具有将腈化合物转化为相应的酰胺化合物的活性。

3. 发明授权

US5373172A Semiconducting diamond light-emitting element 失效
标题翻译：半导体金刚石发光元件
公开(公告)号：US5373172A
公开(公告)日：1994-12-13
申请号：US544
申请日：1993-01-04
申请人： Koji Kobashi , Koichi Miyata , Kazuo Kumagai , Shigeaki Miyauchi , Yuichi Matsui
发明人： Koji Kobashi , Koichi Miyata , Kazuo Kumagai , Shigeaki Miyauchi , Yuichi Matsui
IPC分类号： C09K11/65 , H01B1/04 , H01L21/205 , H01L33/00 , H01L33/34 , H01L33/40 , H01L29/161 , H01L23/48 , H01L29/205
CPC分类号： H01L33/34 , C09K11/65 , H01B1/04 , H01L33/0033 , H01L33/0037 , H01L33/0054 , Y02B20/181
摘要： A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.
摘要翻译：半导体金刚石电致发光元件包括导电衬底，在衬底上形成的半导体金刚石层，形成在半导体金刚石层上的绝缘金刚石层，形成在绝缘金刚石层上的前电极和形成在导电衬底上的背电极与欧姆接触相同。由半导体金刚石电致发光元件发射的光的颜色可以通过改变半导体金刚石层中的杂质含量来容易地确定。半导体金刚石电致发光元件的发光强度可以通过改变施加在前电极和后电极上的电压而容易地改变，而不会导致电介质击穿。

4. 发明授权

US4940015A Plasma reactor for diamond synthesis 失效
标题翻译：用于金刚石合成的等离子体反应器
公开(公告)号：US4940015A
公开(公告)日：1990-07-10
申请号：US379586
申请日：1989-07-13
申请人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Yoshio Kawate , Kazuo Kumagai , Norio Suzuki , Yutaka Kawata , Kiyotaka Ishibashi
发明人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Yoshio Kawate , Kazuo Kumagai , Norio Suzuki , Yutaka Kawata , Kiyotaka Ishibashi
IPC分类号： C23C16/26 , C23C16/27 , C23C16/50 , C23C16/511 , C30B25/10 , C30B29/04 , H01J37/32
CPC分类号： C23C16/274 , C23C16/26 , C23C16/277 , C23C16/511 , C30B25/105 , H01J37/32192 , H01J37/32284 , H01J37/32733 , H01J2237/339
摘要： A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode. A plasma is produced only in the central portion of the reaction chamber, so that the etching of the microwave window and the resulting contamination of the diamond film by impurities produced by etching the microwave window are prevented. The plasma reactor for diamond synthesis is capable of forming a high-quality diamond film on a large surface of a substrate at a high growth rate in a range of 1 to 2 .mu.m/hr.
摘要翻译：用于金刚石合成的等离子体反应器包括微波发生器，连接到微波发生器的波导，设置在波导内的天线，以将沿波导传播的微波导向反应室的内部，设置在反应室的上壁上方的微波窗口波导，由（a）气密地接合到微波窗口和波导的圆柱形底部构件限定的反应室，（b）侧壁中的反应气体入口和气体出口，以及（c）基板保持器设置在与微波窗口相对的反应室内，以便朝向和远离微波窗口移动，以调节微波窗口和衬底保持器之间的距离以产生所需的微波谐振模式。仅在反应室的中心部分产生等离子体，从而防止了通过蚀刻微波窗口产生的杂质对微波窗口的蚀刻和金刚石膜的污染。用于金刚石合成的等离子体反应器能够以1至2μm/ hr的高生长速率在基板的大表面上形成高质量的金刚石膜。

5. 发明授权

US4764602A Antibiotics, and their production 失效
标题翻译：抗生素及其生产
公开(公告)号：US4764602A
公开(公告)日：1988-08-16
申请号：US943906
申请日：1986-12-19
申请人： Kazuo Kumagai , Kiyoshi Taya , Shin Tanaka , Koichi Moriguchi , Masatomo Fukasawa , Akio Fukui
发明人： Kazuo Kumagai , Kiyoshi Taya , Shin Tanaka , Koichi Moriguchi , Masatomo Fukasawa , Akio Fukui
IPC分类号： A61K31/70 , A61K31/7042 , A61K31/7048 , A61P31/00 , C07H17/04 , C12P19/44 , C12P19/58 , C12R1/365 , C07H17/08
CPC分类号： C12R1/365 , C07H17/04 , C12P19/58
摘要： A novel antibiotic of the formula: ##STR1## wherein R is a hydrogen atom or a methyl group and preparation of the antibiotic by cultivating Nocardia sp. SC-4710.
摘要翻译：一种下式的新型抗生素：其中R是氢原子或甲基，通过培养诺卡氏菌属（Nocardia sp。）制备抗生素。 SC-4710。

6. 发明申请

US20090131412A1 NOVEL 2-QUINOLONE DERIVATIVE 审中-公开
标题翻译：新二氢喹诺酮衍生物
公开(公告)号：US20090131412A1
公开(公告)日：2009-05-21
申请号：US11916592
申请日：2006-06-05
申请人： Kazuhito Ikeda , Kazuo Kumagai , Katsunori Tsuboi , Nobuhisa Fukuda
发明人： Kazuhito Ikeda , Kazuo Kumagai , Katsunori Tsuboi , Nobuhisa Fukuda
IPC分类号： A61K31/4709 , A61K31/473 , A61K31/55 , A61K31/5377 , A61K31/4741 , C07D413/12 , C07D401/12 , C07D491/056
CPC分类号： C07D405/12 , C07D215/227 , C07D221/16 , C07D401/06 , C07D401/12 , C07D401/14 , C07D405/14 , C07D409/12 , C07D413/14 , C07D417/12 , C07D491/04
摘要： A compound represented by the formula (1) or a pharmaceutically acceptable salt thereof which has a therapeutic or prophylactic effect on an SNS-related disease such as neuropathic pain. (1) wherein R1 and R2 independently represent an alkyl group having 1 to 4 carbon atoms or the like, or R1 and R2 may together form a 5- to 7-membered ring; n represents a numerical number of 1 to 3; A represents a substituted or unsubstituted aryl group or the like or a formula: —N(R5)R6 (wherein R5 and R6 independently represent a substituted or unsubstituted alkyl group or the like); and R3 and R4 independently represent a substituted or unsubstituted alkyl group or the like, or R3 and R4 may together form a substituted or unsubstituted, saturated or unsubstituted nitrogenated heterocyclic ring, provided that both of R1 and R2 are not a hydrogen atom when R3 and R4 together form a piperidine ring.
摘要翻译：由式（1）表示的化合物或其药学上可接受的盐对SNS相关疾病如神经性疼痛具有治疗或预防作用。（1）其中R1和R2独立地表示具有1至4个碳原子的烷基等，或者R1和R2可以一起形成5-至7-元环; n表示1〜3的数字; A表示取代或未取代的芳基等或式：-N（R5）R6（其中R5和R6独立地表示取代或未取代的烷基等）; 并且R 3和R 4独立地表示取代或未取代的烷基等，或者R 3和R 4可以一起形成取代或未取代的饱和或未取代的氮杂环，条件是R 1和R 2不是氢原子， R4一起形成哌啶环。

7. 发明授权

US5298766A Diamond heterojunction diode 失效
标题翻译：金刚石异质结二极管
公开(公告)号：US5298766A
公开(公告)日：1994-03-29
申请号：US854910
申请日：1992-03-20
申请人： Koji Kobashi , Kozo Nishimura , Shigeaki Miyauchi , Kazuo Kumagai , Rie Katoh
发明人： Koji Kobashi , Kozo Nishimura , Shigeaki Miyauchi , Kazuo Kumagai , Rie Katoh
IPC分类号： H01L21/205 , H01L29/16 , H01L29/861 , H01L29/48 , H01L29/56
CPC分类号： H01L29/1602 , H01L29/861
摘要： A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.
摘要翻译：金刚石异质结二极管具有改进的整流特性，具有小的反向电流和大的正向电流。通过微波等离子体CVD以B掺杂p型半导体金刚石层，绝缘未掺杂金刚石层（比1（μm）薄）的顺序，在低电阻p型硅衬底上形成三层， n型半导体硅层。欧姆电极形成在n型半导体硅层的正面和衬底的背面。在正向偏压下，电场被施加到中间绝缘层以加速空穴和电子的传输。在反向偏置下，由于中间层，能带具有缺口以及势垒，从而防止空穴从n型半导体金刚石层传输到p型半导体金刚石层，导致改进的整流特性。

8. 发明授权

US5160405A Method of etching diamond thin films 失效
标题翻译：蚀刻金刚石薄膜的方法
公开(公告)号：US5160405A
公开(公告)日：1992-11-03
申请号：US670590
申请日：1991-03-18
申请人： Shigeaki Miyauchi , Koichi Miyata , Kazuo Kumagai , Koji Kobashi
发明人： Shigeaki Miyauchi , Koichi Miyata , Kazuo Kumagai , Koji Kobashi
IPC分类号： C30B33/12 , C30B29/04 , C30B33/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/3065 , C30B29/04 , C30B33/00
摘要： Described is an etching method of a diamond film which comprises providing a diamond film in an atmosphere of a gas containing at least oxygen and/or hydrogen and subjecting the diamond film to an irradiation of an electron beam generated by direct current discharge through a pattern of a mask. In this condition, when the diamond film is contacted with the plasma produced by the electron beam in the atmosphere, the unmasked areas are irradiated by the electron beam, and converted to graphite. The graphite is more readily etched by the plasma, so that the diamond film can be etched at a high rate. The etching through a mask ensures a fine etched pattern of the diamond film. In addition, a diamond film with a large area can be etched by this method.
摘要翻译：描述了金刚石膜的蚀刻方法，其包括在至少含有氧和/或氢的气体的气氛中提供金刚石膜，并使金刚石膜通过直流放电产生的电子束的照射，一个面具在这种情况下，当金刚石膜与大气中由电子束产生的等离子体接触时，未掩蔽的区域被电子束照射，并转化为石墨。通过等离子体更容易地蚀刻石墨，使得金刚石膜可以高速蚀刻。通过掩模的蚀刻确保金刚石膜的精细蚀刻图案。此外，可以通过该方法蚀刻具有大面积的金刚石膜。

9. 发明授权

US5086014A Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film 失效
标题翻译：使用多晶金刚石薄膜合成的肖特基二极管制造工艺
公开(公告)号：US5086014A
公开(公告)日：1992-02-04
申请号：US584110
申请日：1990-09-18
申请人： Koichi Miyata , Kazuo Kumagai , Koji Kobashi , Yuichi Matsui , Akimitsu Nakaue
发明人： Koichi Miyata , Kazuo Kumagai , Koji Kobashi , Yuichi Matsui , Akimitsu Nakaue
IPC分类号： H01L21/205 , H01L21/04 , H01L21/20 , H01L21/285 , H01L29/16 , H01L29/45 , H01L29/47 , H01L29/862 , H01L29/872
CPC分类号： H01L29/872 , H01L21/02381 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L21/28537 , H01L29/1602 , H01L29/45 , H01L29/6603 , H01L29/862 , Y10S148/14
摘要： A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.
摘要翻译：使用金刚石膜的肖特基二极管制造方法包括通过使用由CH 4，H 2和B 2 H 6组成的源气体的CVD在低电阻p型Si衬底上形成B掺杂的p型多晶金刚石膜，在其上形成欧姆接触并且在B掺杂的p型多晶金刚石膜上形成Al，Pt Au，Ti或W的金属电极。源气体的B / C浓度比大于0.01ppm且小于20ppm。

10. 发明授权

US07642362B2 Compounds as semaphorin inhibitors 失效
标题翻译：化合物作为信号素抑制剂
公开(公告)号：US07642362B2
公开(公告)日：2010-01-05
申请号：US10502453
申请日：2003-01-22
申请人： Kazuo Kumagai , Nobuo Hosotani
发明人： Kazuo Kumagai , Nobuo Hosotani
IPC分类号： C07D311/92 , C07D493/00 , C07D311/94
CPC分类号： C07D493/04 , C07D311/86 , C07D493/08 , C07D493/10 , C12P17/181
摘要： Compounds represented by the general formula (1) wherein R1 and R3 are each independently hydrogen or a carboxyl group and R2 and R4 are each independently hydrogen or a hydroxyl group, or pharmaceutically acceptable salts thereof, which exhibit semaphorin-inhibitory activity and are useful as preventives or remedies for neuropathic and neurodegenerative diseases are provided.
摘要翻译：由通式（1）表示的化合物，其中R 1和R 3各自独立地为氢或羧基，R 2和R 4各自独立地为氢或羟基，或其药学上可接受的盐，其具有信号素抑制活性并可用作提供了神经病和神经退行性疾病的预防措施或补救措施。

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