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1. 发明授权

US5373172A Semiconducting diamond light-emitting element 失效
标题翻译：半导体金刚石发光元件
公开(公告)号：US5373172A
公开(公告)日：1994-12-13
申请号：US544
申请日：1993-01-04
申请人： Koji Kobashi , Koichi Miyata , Kazuo Kumagai , Shigeaki Miyauchi , Yuichi Matsui
发明人： Koji Kobashi , Koichi Miyata , Kazuo Kumagai , Shigeaki Miyauchi , Yuichi Matsui
IPC分类号： C09K11/65 , H01B1/04 , H01L21/205 , H01L33/00 , H01L33/34 , H01L33/40 , H01L29/161 , H01L23/48 , H01L29/205
CPC分类号： H01L33/34 , C09K11/65 , H01B1/04 , H01L33/0033 , H01L33/0037 , H01L33/0054 , Y02B20/181
摘要： A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.
摘要翻译：半导体金刚石电致发光元件包括导电衬底，在衬底上形成的半导体金刚石层，形成在半导体金刚石层上的绝缘金刚石层，形成在绝缘金刚石层上的前电极和形成在导电衬底上的背电极与欧姆接触相同。由半导体金刚石电致发光元件发射的光的颜色可以通过改变半导体金刚石层中的杂质含量来容易地确定。半导体金刚石电致发光元件的发光强度可以通过改变施加在前电极和后电极上的电压而容易地改变，而不会导致电介质击穿。

2. 发明授权

US5107315A MIS type diamond field-effect transistor with a diamond insulator undercoat 失效
标题翻译：具有金刚石绝缘子底层的MIS型金刚石场效应晶体管
公开(公告)号：US5107315A
公开(公告)日：1992-04-21
申请号：US668172
申请日：1991-03-12
申请人： Kazuo Kumagai , Koichi Miyata , Shigeaki Miyauchi , Yuichi Matsui , Koji Kobashi
发明人： Kazuo Kumagai , Koichi Miyata , Shigeaki Miyauchi , Yuichi Matsui , Koji Kobashi
IPC分类号： H01L29/78 , H01L21/04 , H01L29/16 , H01L29/786
CPC分类号： H01L29/1602 , H01L29/66045 , H01L29/78684
摘要： Disclosed herein is a MIS type diamond field-effect transistor comprising a diamond semiconductor layer provided as an active layer by chemical vapor deposition (CVD), and a diamond insulator layer provided on the diamond semiconductor layer also by CVD, a gate electrode being formed on the diamond insulator layer, wherein a diamond insulator undercoat is provided on a non-diamond substrate by CVD, and the diamond semiconductor layer and the diamond insulator layer are sequentially provided on the diamond insulator undercoat. The MIS type diamond field-effect transistor with this structure ensures that in the manufacture thereof, a diamond insulator undercoat of large area can be formed on a non-diamond substrate of CVD, whereby a large number of elemental devices can be fabricated simultaneously.
摘要翻译：本文公开了一种MIS型金刚石场效应晶体管，其包括通过化学气相沉积（CVD）作为有源层提供的金刚石半导体层，以及还通过CVD设置在金刚石半导体层上的金刚石绝缘体层，栅电极形成在金刚石绝缘体层，其中通过CVD在非金刚石基底上提供金刚石绝缘体底涂层，并且金刚石半导体层和金刚石绝缘体层依次设置在金刚石绝缘体底涂层上。具有这种结构的MIS型金刚石场效应晶体管确保了在其制造中可以在CVD的非金刚石衬底上形成大面积的金刚石绝缘体底涂层，从而可以同时制造大量的元件。

3. 发明授权

US5160405A Method of etching diamond thin films 失效
标题翻译：蚀刻金刚石薄膜的方法
公开(公告)号：US5160405A
公开(公告)日：1992-11-03
申请号：US670590
申请日：1991-03-18
申请人： Shigeaki Miyauchi , Koichi Miyata , Kazuo Kumagai , Koji Kobashi
发明人： Shigeaki Miyauchi , Koichi Miyata , Kazuo Kumagai , Koji Kobashi
IPC分类号： C30B33/12 , C30B29/04 , C30B33/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/3065 , C30B29/04 , C30B33/00
摘要： Described is an etching method of a diamond film which comprises providing a diamond film in an atmosphere of a gas containing at least oxygen and/or hydrogen and subjecting the diamond film to an irradiation of an electron beam generated by direct current discharge through a pattern of a mask. In this condition, when the diamond film is contacted with the plasma produced by the electron beam in the atmosphere, the unmasked areas are irradiated by the electron beam, and converted to graphite. The graphite is more readily etched by the plasma, so that the diamond film can be etched at a high rate. The etching through a mask ensures a fine etched pattern of the diamond film. In addition, a diamond film with a large area can be etched by this method.
摘要翻译：描述了金刚石膜的蚀刻方法，其包括在至少含有氧和/或氢的气体的气氛中提供金刚石膜，并使金刚石膜通过直流放电产生的电子束的照射，一个面具在这种情况下，当金刚石膜与大气中由电子束产生的等离子体接触时，未掩蔽的区域被电子束照射，并转化为石墨。通过等离子体更容易地蚀刻石墨，使得金刚石膜可以高速蚀刻。通过掩模的蚀刻确保金刚石膜的精细蚀刻图案。此外，可以通过该方法蚀刻具有大面积的金刚石膜。

4. 发明授权

US5358754A Method for forming diamond films by vapor phase synthesis 失效
标题翻译：通过气相合成形成金刚石膜的方法
公开(公告)号：US5358754A
公开(公告)日：1994-10-25
申请号：US908084
申请日：1992-07-06
申请人： Koji Kobashi , Shigeaki Miyauchi , Kozo Nishimura , Kazuo Kumagai , Rie Kato
发明人： Koji Kobashi , Shigeaki Miyauchi , Kozo Nishimura , Kazuo Kumagai , Rie Kato
IPC分类号： C23C16/26 , C23C16/27 , C23C16/46 , C23C16/50 , C23C16/503 , C30B29/04 , B05D3/06
CPC分类号： C23C16/272 , C23C16/277 , C23C16/503
摘要： A method for forming diamond films by vapor phase synthesis comprising a process of forming the diamond films on a substrate by direct current discharge plasma, in an atmosphere of a reaction gas including a gas containing at least carbon and hydrogen, or in an atmosphere of a mixed gas containing at least a carbon-containing gas and a hydrogen gas, at a gas pressure between 0.1 and 5 Torr and a substrate temperature between 300.degree. and 1000.degree. C.
摘要翻译：通过气相合成形成金刚石膜的方法包括通过直流放电等离子体在包括至少含有碳和氢的气体的反应气体的气氛中或在气相中的气氛中在基板上形成金刚石膜的方法含有至少含碳气体和氢气的混合气体，气体压力为0.1〜5托，基板温度为300〜1000℃。

5. 发明授权

US5298766A Diamond heterojunction diode 失效
标题翻译：金刚石异质结二极管
公开(公告)号：US5298766A
公开(公告)日：1994-03-29
申请号：US854910
申请日：1992-03-20
申请人： Koji Kobashi , Kozo Nishimura , Shigeaki Miyauchi , Kazuo Kumagai , Rie Katoh
发明人： Koji Kobashi , Kozo Nishimura , Shigeaki Miyauchi , Kazuo Kumagai , Rie Katoh
IPC分类号： H01L21/205 , H01L29/16 , H01L29/861 , H01L29/48 , H01L29/56
CPC分类号： H01L29/1602 , H01L29/861
摘要： A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.
摘要翻译：金刚石异质结二极管具有改进的整流特性，具有小的反向电流和大的正向电流。通过微波等离子体CVD以B掺杂p型半导体金刚石层，绝缘未掺杂金刚石层（比1（μm）薄）的顺序，在低电阻p型硅衬底上形成三层， n型半导体硅层。欧姆电极形成在n型半导体硅层的正面和衬底的背面。在正向偏压下，电场被施加到中间绝缘层以加速空穴和电子的传输。在反向偏置下，由于中间层，能带具有缺口以及势垒，从而防止空穴从n型半导体金刚石层传输到p型半导体金刚石层，导致改进的整流特性。

6. 发明授权

US5869390A Method for forming electrode on diamond for electronic devices 失效
标题翻译：电子设备金刚石电极形成方法
公开(公告)号：US5869390A
公开(公告)日：1999-02-09
申请号：US871552
申请日：1997-06-09
申请人： Kozo Nishimura , Koji Kobashi , Shigeaki Miyauchi , Rie Kato , Hisashi Koyama , Kimitsugu Saito
发明人： Kozo Nishimura , Koji Kobashi , Shigeaki Miyauchi , Rie Kato , Hisashi Koyama , Kimitsugu Saito
IPC分类号： H01L21/28 , H01L21/04 , H01L23/14 , H01L23/373 , H01L21/44 , H01L21/00
CPC分类号： H01L21/0435 , H01L21/043 , H01L23/3732 , H01L2924/0002 , Y10S148/10 , Y10S148/148
摘要： Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.
摘要翻译：公开了一种在金刚石上形成电极的方法，包括以下步骤：在金刚石或金刚石膜上形成掩模图案; 通过惰性气体的等离子体处理金刚石表面; 在试样的整个表面上形成电极膜; 并除去掩模，从而形成电极的指定图案。通过该方法，可以形成对于电子器件的金刚石和金刚石膜具有高粘附性的电极。

7. 发明授权

US5770467A Method for forming electrode on diamond for electronic devices 失效
公开(公告)号：US5770467A
公开(公告)日：1998-06-23
申请号：US622858
申请日：1996-03-29
申请人： Kozo Nishimura , Koji Kobashi , Shigeaki Miyauchi , Rie Kato , Hisashi Koyama , Kimitsugu Saito
发明人： Kozo Nishimura , Koji Kobashi , Shigeaki Miyauchi , Rie Kato , Hisashi Koyama , Kimitsugu Saito
IPC分类号： H01L21/28 , H01L21/04 , H01L23/14 , H01L23/373 , H01L21/441
CPC分类号： H01L21/0435 , H01L21/043 , H01L23/3732 , H01L2924/0002 , Y10S148/10 , Y10S148/148
摘要： Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

8. 发明授权

US5846344A Spring steel of high strength and high corrosion resistance 失效
标题翻译：弹簧钢强度高，耐腐蚀性高
公开(公告)号：US5846344A
公开(公告)日：1998-12-08
申请号：US592546
申请日：1996-01-26
申请人： Yasunobu Kawaguchi , Masataka Shimotsusa , Kan Momozaki , Takenori Nakayama , Shigeaki Miyauchi , Yoshinori Yamamoto , Norio Ohkouchi
发明人： Yasunobu Kawaguchi , Masataka Shimotsusa , Kan Momozaki , Takenori Nakayama , Shigeaki Miyauchi , Yoshinori Yamamoto , Norio Ohkouchi
IPC分类号： C21D8/00 , C21D8/06 , C21D9/02 , C22C38/00 , C22C38/02 , C22C38/34 , C22C38/44 , C22C38/46 , C22C38/48 , C22C38/52 , C22C38/20 , C22C38/40
CPC分类号： C22C38/34 , C21D8/065 , C22C38/02 , C22C38/46 , C21D9/02 , Y10S148/908
摘要： Disclosed is a spring steel for a high corrosion resistant and high strength, which exhibits an excellent drawability without softening heat treatment after hot rolling, and which has a strength of 1900 MPa or more by quenching and tempering and an excellent corrosion resistance. The spring steel contains elements of C, Si, Mn and Cr, and elements of Ni and/or Mo in suitable amounts, the balance being essentially Fe and inevitable impurities, wherein the elements satisfy the following requirement: 2.5.ltoreq.(FP).ltoreq.4.5 2.0.ltoreq.(FP/log D).ltoreq.4.0 where D is a diameter (mm) of the rolled material, and FP=(0.23�C!+0.1).times.(0.7�Si!+1).times.(3.5�Mn!+1) .times.(2.2�Cr!+1).times.(0.4�Ni!+1).times.(3�Mo!+1) in which �element! represents mass % of the element.
摘要翻译：公开了一种高耐腐蚀，高强度的弹簧钢，其在热轧后没有软化热处理的情况下具有优异的拉伸性，并且通过淬火回火和优异的耐腐蚀性而具有1900MPa以上的强度。弹簧钢含有C，Si，Mn和Cr的元素，以及Ni和/或Mo元素的合适量，余量基本上为Fe和不可避免的杂质，其中元素满足以下要求：2.5（FP）其中D是轧制材料的直径（mm），FP =（0.23 [C] +0.1）x（0.7 [Si] + 1）[元素]表示元素的质量％的x（3.5 [Mn] +1）x（2.2 [Cr] +1）x（0.4 [Ni] +1）x（3 [Mo] +1）

9. 发明授权

US5508002A Spring steel of high strength and high corrosion resistance 失效
标题翻译：弹簧钢强度高，耐腐蚀性高
公开(公告)号：US5508002A
公开(公告)日：1996-04-16
申请号：US335346
申请日：1994-11-03
申请人： Yasunobu Kawaguchi , Masataka Shimotsusa , Kan Momozaki , Takenori Nakayama , Shigeaki Miyauchi , Yoshinori Yamamoto , Norio Ohkouchi
发明人： Yasunobu Kawaguchi , Masataka Shimotsusa , Kan Momozaki , Takenori Nakayama , Shigeaki Miyauchi , Yoshinori Yamamoto , Norio Ohkouchi
IPC分类号： C21D8/00 , C21D8/06 , C21D9/02 , C22C38/00 , C22C38/02 , C22C38/34 , C22C38/44 , C22C38/46 , C22C38/48 , C22C38/52 , C22C38/22 , C22C38/40
CPC分类号： C22C38/34 , C21D8/065 , C22C38/02 , C22C38/46 , C21D9/02 , Y10S148/908
摘要： Disclosed is a spring steel for a high corrosion resistant and high strength, which exhibits an excellent drawability without softening heat treatment after hot rolling, and which has a strength of 1900 MPa or more by quenching and tempering and an excellent corrosion resistance. The spring steel contains elements of C, Si, Mn and Cr, and elements of Ni and/or Mo in suitable amounts, the balance being essentially Fe and inevitable impurities, wherein the elements satisfy the following requirement:2.5.ltoreq.(FP).ltoreq.4.52.0.ltoreq.(FP/log D).ltoreq.4.0where D is a diameter (mm) of the rolled material, and FP=(0.23[C]+0.1).times.(0.7[Si]+1).times.(3.5[Mn]+1).times.(2.2[Cr]+1).times.(0.4[Ni]+1).times.(3[Mo]+1) in which [element] represents mass % of the element.
摘要翻译：公开了一种高耐腐蚀，高强度的弹簧钢，其在热轧后没有软化热处理的情况下具有优异的拉伸性，并且通过淬火回火和优异的耐腐蚀性而具有1900MPa以上的强度。弹簧钢含有C，Si，Mn和Cr的元素，以及Ni和/或Mo元素的合适量，余量基本上为Fe和不可避免的杂质，其中元素满足以下要求：2.5（FP）其中D是轧制材料的直径（mm），FP =（0.23 [C] + 0.1）x（0.7 [Si] +1））x（3.5 [Mn] +1）x（2.2 [Cr] +1）x（0.4 [Ni] +1）x（3 [Mo] +1）其中[元素]表示元素的质量％。

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