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1. 发明申请

US20190056070A1 COMPACT LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE INCLUDING THE SAME 审中-公开
公开(公告)号：US20190056070A1
公开(公告)日：2019-02-21
申请号：US16166159
申请日：2018-10-22
申请人： SEOUL VIOSYS CO., LTD.
发明人： Ye Seul KIM , Kyoung Wan Kim , Sang Won Woo , Ji Hye Kim
IPC分类号： F21K9/232 , G06F1/16 , H01L33/38 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/32 , H01L33/00 , H01L25/075 , H01L33/06
CPC分类号： F21K9/232 , F21Y2107/70 , G06F1/1662 , H01L25/0753 , H01L33/0033 , H01L33/0095 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2224/73204 , H01L2933/0016 , H01L2933/0025 , H05K1/189 , H05K2201/0108 , H05K2201/10106
摘要： A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

2. 发明授权

US09705081B2 Electric field control element for phonons 有权
公开(公告)号：US09705081B2
公开(公告)日：2017-07-11
申请号：US15115175
申请日：2015-01-30
申请人： The Regents of the University of California
发明人： Michael Scheibner
IPC分类号： H01L49/00 , H01L29/872 , H01L29/12 , H01L29/16 , H01L29/20 , H01L29/47 , H01L29/66 , H01L33/00
CPC分类号： H01L49/006 , H01L29/127 , H01L29/16 , H01L29/20 , H01L29/475 , H01L29/66143 , H01L29/872 , H01L33/0033
摘要： Generally discussed herein are techniques for and systems and apparatuses configured to control phonons using an electric field. In one or more embodiments, an apparatus can include electrical contacts, two quantum dots embedded in a semiconductor such that when an electrical bias is applied to the electrical contacts, the electric field produced by the electrical bias is substantially parallel to an axis through the two quantum dots, and a phononic wave guide coupled to the semiconductor, the phononic wave guide configured to transport phonons therethrough.

3. 发明申请

US20160064600A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20160064600A1
公开(公告)日：2016-03-03
申请号：US14934244
申请日：2015-11-06
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： MASAYUKI KURODA , MANABU YANAGIHARA , SHINICHI OKI
IPC分类号： H01L33/06 , H01L33/00 , H01L33/18 , H01L33/32
CPC分类号： H01L33/06 , H01L25/167 , H01L27/15 , H01L29/2003 , H01L29/7786 , H01L29/872 , H01L33/0008 , H01L33/0025 , H01L33/0033 , H01L33/0041 , H01L33/18 , H01L33/32 , H01L33/36 , H01L2924/0002 , H01L2924/00
摘要： A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode. The pn light-emitting body includes a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit a light beam having an energy value higher than an electron trapping level existing in the semiconductor stacked body, in which the p-type nitride semiconductor layer of the pn light-emitting body is electrically connected to the gate electrode, and functions as a gate of the transistor.
摘要翻译：氮化物半导体器件包括形成在衬底上的半导体层叠体的晶体管和形成在半导体层叠体上的pn发光体。半导体层叠体包括第一氮化物半导体层和形成在第一氮化物半导体层上并具有比第一氮化物半导体层宽的带隙的第二氮化物半导体层。晶体管包括：半导体层叠体; 在半导体层叠体上彼此远离形成的源电极和漏电极; 以及设置在源电极和漏电极之间并且远离源电极和漏电极形成的栅电极。 pn发光体包括p型氮化物半导体层和n型氮化物半导体层，以发射具有高于存在于半导体层叠体中的电子俘获电平的能量值的光束，其中p型 pn发光体的氮化物半导体层与栅电极电连接，作为晶体管的栅极。

4. 发明授权

US09054232B2 Integration of gallium nitride LEDs with aluminum nitride/gallium nitride devices on silicon substrates for AC LEDs 有权
标题翻译：将氮化镓LED与氮化铝/氮化镓器件集成在用于交流发光二极管的硅衬底上
公开(公告)号：US09054232B2
公开(公告)日：2015-06-09
申请号：US14378113
申请日：2013-02-28
申请人： Koninklijke Philips N.V.
发明人： Theodore Chung
IPC分类号： H01L25/16 , H01L27/15 , H01L33/00 , H01L33/06 , H01L25/075 , H01L25/07 , H01L25/065
CPC分类号： H01L33/007 , H01L25/0657 , H01L25/074 , H01L25/0756 , H01L27/0605 , H01L27/0694 , H01L27/15 , H01L33/0025 , H01L33/0033 , H01L33/06 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating an epitaxial structure includes providing a substrate (102, 202, 302, 402) and a heterojunction stack on a first side the substrate, and forming a GaN light emitting diode stack (134) on a second side of the substrate. The heterojunction stack includes an undoped gallium nitride (GaN) layer and a doped aluminum gallium nitride (AIGaN) layer on the undoped GaN layer. The GaN light emitting diode stack (134) includes an n-type GaN layer (136) over the substrate, a GaN/indium gallium nitride (InGaN) multiple quantum well (MQW) structure (138) over the n-type GaN layer, a p-type AIGaN layer (140) over the n-type GaN/InGaN MQW structure, and a p-type GaN layer (142) over the p-type AIGaN layer.
摘要翻译：一种用于制造外延结构的方法包括：在所述衬底的第一侧上提供衬底（102,202,302,402）和异质结叠层，以及在所述衬底的第二侧上形成GaN发光二极管叠层（134）。异质结堆叠包括在未掺杂的GaN层上的未掺杂的氮化镓（GaN）层和掺杂的氮化镓铝（AlGaN）层。 GaN发光二极管堆叠（134）在衬底上包括n型GaN层（136），在n型GaN层上的GaN /铟镓氮（InGaN）多量子阱（MQW）结构（138） n型GaN / InGaN MQW结构上的p型AIGaN层（140）和p型AIGaN层上的p型GaN层（142）。

5. 发明申请

US20150060927A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME 审中-公开
标题翻译：发光装置，发光装置包装和包括其的照明系统
公开(公告)号：US20150060927A1
公开(公告)日：2015-03-05
申请号：US14535122
申请日：2014-11-06
申请人： LG Innotek Co., Ltd.
发明人： Sung Min HWANG , Hyun Don SONG , Hyun Kyong CHO
IPC分类号： H01L33/60 , H01L33/62 , H01L33/14 , H01L33/00
CPC分类号： H01L33/60 , H01L33/0033 , H01L33/145 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/48 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
摘要翻译：描述了包括第二导电类型半导体层的发光器件; 在所述第二导电类型半导体层上方的有源层; 在有源层上的第一导电类型半导体层; 在第二导电类型半导体层下面的第一区域中的第二电极; 包括金属的电流阻挡层; 以及位于第一导电类型半导体层上的第一电极。此外，第一电极具有与电流阻挡层垂直重叠的至少一个部分。

6. 发明申请

US20150028353A1 Schottky Barrier Detection Devices Having a 4H-SiC n-Type Epitaxial Layer 有权
标题翻译：具有4H-SiC n型外延层的肖特基势垒检测器件
公开(公告)号：US20150028353A1
公开(公告)日：2015-01-29
申请号：US14444140
申请日：2014-07-28
申请人： Krishna C. Mandal , J. Russell Terry
发明人： Krishna C. Mandal , J. Russell Terry
IPC分类号： H01L31/028 , H01L31/0224 , H01L31/036
CPC分类号： H01L31/036 , H01L31/0312 , H01L31/118 , H01L33/0033
摘要： A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm−3 to about 5×1018 cm−3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm−3 to about 5×1015 cm−3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
摘要翻译：提供一种检测装置及其制造和使用方法。检测装置可以包括：SiC衬底，其限定从平面切割到约12°的衬底表面; 衬底表面上的缓冲外延层; 缓冲外延层上的n型外延层; 和n型外延层上的顶部接触。缓冲外延层可以包括以氮，硼，铝或其混合物掺杂浓度为约1×10 15 cm -3至约5×10 18 cm -3的n型4H-SiC外延层。 n型外延层可以包括用氮气掺杂浓度为约1×1013cm-3至约5×1015cm-3的n型4H-SiC外延层。顶部接触可以具有约8nm至约15nm的厚度。

7. 发明申请

US20140284553A1 CNT-BASED ELECTRONIC AND PHOTONIC DEVICES 审中-公开
标题翻译：基于CNT的电子和光电器件
公开(公告)号：US20140284553A1
公开(公告)日：2014-09-25
申请号：US14297802
申请日：2014-06-06
申请人： NANO-ELECTRONIC AND PHOTONIC DEVICES AND CIRCUITS, LLC
发明人： ALEXANDER KASTALSKY
IPC分类号： H01L51/00 , H01L51/52 , H01L51/05
CPC分类号： H01L51/0048 , B82Y10/00 , H01L33/0033 , H01L33/0041 , H01L51/0508 , H01L51/0512 , H01L51/057 , H01L51/105 , H01L51/5296
摘要： The carbon nanotube-based electronic and photonic devices are disclosed. The devices are united by the same technology as well as similar elements for their fabrication. The devices consist of the vertically grown semiconductor nanotube having two Schottky barriers at the nanotube ends and one Schottky barrier at the middle of the nanotube. Depending on the Schottky barrier heights and bias arrangements, the disclosed devices can operate either as transistors, CNT MESFET and CNT Hot Electron Transistor, or as a CNT Photon Emitter.
摘要翻译：公开了基于碳纳米管的电子和光子器件。这些设备通过相同的技术以及相似的元件进行组合。器件由在纳米管末端具有两个肖特基势垒的垂直生长的半导体纳米管和纳米管中间的一个肖特基势垒组成。根据肖特基势垒高度和偏置布置，所公开的器件可以作为晶体管，CNT MESFET和CNT热电子晶体管或CNT光子发射器工作。

8. 发明申请

US20140225139A1 LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光器件封装及其制造方法
公开(公告)号：US20140225139A1
公开(公告)日：2014-08-14
申请号：US14079249
申请日：2013-11-13
申请人： Samsung Electronics Co., Ltd.
发明人： Myoung Bo PARK , Ho Young SONG
IPC分类号： H01L33/62 , H01L33/52 , H01L33/60 , H01L33/50
CPC分类号： H01L33/62 , H01L33/0008 , H01L33/0033 , H01L33/0041 , H01L33/005 , H01L33/382 , H01L33/48 , H01L33/483 , H01L33/486 , H01L33/50 , H01L33/501 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/642 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0008 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
摘要： A light emitting device package includes a frame unit including at least two lead frames spaced apart from one another and a light emitting region defined by a distance between the two lead frames; a light emitting device mounted on a surface of the frame unit such that the light emitting device is positioned across the light emitting region, and electrically connected to the lead frames; a wavelength conversion unit provided in the light emitting region, and configured to convert a wavelength of light emitted from the light emitting device and emit the light having the converted wavelength; and a reflective molding unit formed on the surface of the frame unit to cover the light emitting device.
摘要翻译：发光器件封装包括框架单元，其包括彼此间隔开的至少两个引线框架和由两个引线框架之间的距离限定的发光区域; 安装在所述框架单元的表面上的发光器件，使得所述发光器件位于所述发光区域的两侧，并且电连接到所述引线框架; 波长转换单元，设置在所述发光区域中，并且被配置为转换从所述发光器件发射的光的波长并发射具有所述转换波长的光; 以及形成在框架单元的表面上以覆盖发光器件的反射模制单元。

9. 发明授权

US08742533B2 Constant current semiconductor device having a schottky barrier 失效
标题翻译：具有肖特基势垒的恒流半导体器件
公开(公告)号：US08742533B2
公开(公告)日：2014-06-03
申请号：US13219838
申请日：2011-08-29
申请人： Sheau-Feng Tsai , Wen-Ping Huang , Tzuu-Chi Hu
发明人： Sheau-Feng Tsai , Wen-Ping Huang , Tzuu-Chi Hu
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , H01L23/3178 , H01L29/0657 , H01L29/861 , H01L33/0033 , H01L2224/94 , H01L2224/11
摘要： This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off current in conduction channels under certain bias and to provide constant current within cut-off voltage and breakdown voltage region between Schottky barrier section/ohmic contact section as the first electrode and the other ohmic contact section as the second electrode respectively, and has excellent characteristics as lower cut-off voltage (Vkp) than bipolar devices and easily gets higher constant current (Ip) by integrating several constant current units.
摘要翻译：本发明揭示半绝缘衬底上的N型或P型外延层的恒流半导体器件，该器件通过使用肖特基势垒在一定偏压下截止导通沟道中的电流并提供常数作为第一电极的肖特基势垒部/欧姆接触部分之间的截止电压和击穿电压区域内的电流分别为第二电极，并且具有比双极型器件更低的截止电压（Vkp）的优异特性并且通过积分几个恒定电流单元容易地获得更高的恒定电流（Ip）。

10. 发明授权

US07906785B2 Vertical type nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：垂直型氮化物半导体发光器件及其制造方法
公开(公告)号：US07906785B2
公开(公告)日：2011-03-15
申请号：US11585212
申请日：2006-10-24
申请人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
发明人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/0033 , H01L33/32
摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
摘要翻译：提供了一种垂直氮化物半导体发光器件及其制造方法。在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积。高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

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