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    • 1. 发明授权
    • Diamond heterojunction diode
    • 金刚石异质结二极管
    • US5298766A
    • 1994-03-29
    • US854910
    • 1992-03-20
    • Koji KobashiKozo NishimuraShigeaki MiyauchiKazuo KumagaiRie Katoh
    • Koji KobashiKozo NishimuraShigeaki MiyauchiKazuo KumagaiRie Katoh
    • H01L21/205H01L29/16H01L29/861H01L29/48H01L29/56
    • H01L29/1602H01L29/861
    • A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.
    • 金刚石异质结二极管具有改进的整流特性,具有小的反向电流和大的正向电流。 通过微波等离子体CVD以B掺杂p型半导体金刚石层,绝缘未掺杂金刚石层(比1(μm)薄)的顺序,在低电阻p型硅衬底上形成三层, n型半导体硅层。 欧姆电极形成在n型半导体硅层的正面和衬底的背面。 在正向偏压下,电场被施加到中间绝缘层以加速空穴和电子的传输。 在反向偏置下,由于中间层,能带具有缺口以及势垒,从而防止空穴从n型半导体金刚石层传输到p型半导体金刚石层,导致改进的整流特性 。