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1. 发明授权

US5298766A Diamond heterojunction diode 失效
标题翻译：金刚石异质结二极管
公开(公告)号：US5298766A
公开(公告)日：1994-03-29
申请号：US854910
申请日：1992-03-20
申请人： Koji Kobashi , Kozo Nishimura , Shigeaki Miyauchi , Kazuo Kumagai , Rie Katoh
发明人： Koji Kobashi , Kozo Nishimura , Shigeaki Miyauchi , Kazuo Kumagai , Rie Katoh
IPC分类号： H01L21/205 , H01L29/16 , H01L29/861 , H01L29/48 , H01L29/56
CPC分类号： H01L29/1602 , H01L29/861
摘要： A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.
摘要翻译：金刚石异质结二极管具有改进的整流特性，具有小的反向电流和大的正向电流。通过微波等离子体CVD以B掺杂p型半导体金刚石层，绝缘未掺杂金刚石层（比1（μm）薄）的顺序，在低电阻p型硅衬底上形成三层， n型半导体硅层。欧姆电极形成在n型半导体硅层的正面和衬底的背面。在正向偏压下，电场被施加到中间绝缘层以加速空穴和电子的传输。在反向偏置下，由于中间层，能带具有缺口以及势垒，从而防止空穴从n型半导体金刚石层传输到p型半导体金刚石层，导致改进的整流特性。

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