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1. 发明授权

US07825515B2 Semiconductor device, display device, and method of manufacturing semiconductor device 有权
标题翻译：半导体装置，显示装置以及半导体装置的制造方法
公开(公告)号：US07825515B2
公开(公告)日：2010-11-02
申请号：US12206187
申请日：2008-09-08
申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
发明人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
IPC分类号： H01L23/48
CPC分类号： H01L21/2855 , H01L23/53223 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
摘要翻译：半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的源极，漏电极等铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

2. 发明申请

US20090065942A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，显示器件及制造半导体器件的方法
公开(公告)号：US20090065942A1
公开(公告)日：2009-03-12
申请号：US12206187
申请日：2008-09-08
申请人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
发明人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
IPC分类号： H01L23/52 , H01L21/44
CPC分类号： H01L21/2855 , H01L23/53223 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
摘要翻译：半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的诸如源电极和漏电极的铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

3. 发明授权

US08558248B2 A1 alloy film, electronic device, and active matrix substrate for use in electrooptic display device 有权
标题翻译： A1合金膜，电子器件和用于电光显示器件的有源矩阵基板
公开(公告)号：US08558248B2
公开(公告)日：2013-10-15
申请号：US12234371
申请日：2008-09-19
申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata
发明人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata
IPC分类号： H01L33/00
CPC分类号： H01L23/53219 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/12044 , Y10T428/12438 , H01L2924/00
摘要： In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group consisting of Group 2A alkaline earth metals and Groups 3B and 4B metalloids in Period 2 or 3 of the periodic table of the elements. Furthermore, the composition ratio of the first additive element is 0.5-5 at %, and the composition ratio of the second additive element is 0.1-3 at %.
摘要翻译：根据本发明的一个方面，Al合金膜含有由Ni组成的第一添加元素，以及选自2A族碱土金属和3B族和4B族金属中的至少一种第二添加元素元素周期表的周期2或3。此外，第一添加元素的组成比为0.5〜5原子％，第二添加元素的组成比为0.1〜3原子％。

4. 发明授权

US08405091B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08405091B2
公开(公告)日：2013-03-26
申请号：US12523550
申请日：2008-02-04
申请人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
发明人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
IPC分类号： H01L27/14
CPC分类号： G02F1/13439 , G02F1/133555 , G02F1/136227 , G02F2001/136295 , G02F2201/40 , G02F2202/06 , H01L27/124 , H01L29/458
摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.
摘要翻译：显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成或铝合金，并形成在中间杂质含有层上。在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

5. 发明申请

US20100078816A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100078816A1
公开(公告)日：2010-04-01
申请号：US12523550
申请日：2008-02-04
申请人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
发明人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
IPC分类号： H01L23/532 , H01L21/283
CPC分类号： G02F1/13439 , G02F1/133555 , G02F1/136227 , G02F2001/136295 , G02F2201/40 , G02F2202/06 , H01L27/124 , H01L29/458
摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.
摘要翻译：显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成或铝合金，并形成在中间杂质含有层上。在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

6. 发明申请

US20120160319A1 SOLAR BATTERY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120160319A1
公开(公告)日：2012-06-28
申请号：US13394023
申请日：2009-09-04
申请人： Takumi Nakahata , Kazunori Inoue , Yusuke Yamagata
发明人： Takumi Nakahata , Kazunori Inoue , Yusuke Yamagata
IPC分类号： H01L31/0232 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/0527 , H01L31/022425 , H01L31/02245 , H01L31/0392 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/056 , Y02E10/52
摘要： In a solar battery including: a photoelectric conversion layer that converts light into electricity; and a reflecting electrode layer that is provided on an opposite side of a light incident side in the photoelectric conversion layer and reflects light passed through the photoelectric conversion layer to the photoelectric conversion layer side, to realize a reflecting electrode layer having excellent adhesion and thermal corrosion resistance, stable electrical characteristics and satisfactory light reflection characteristics and to obtain a solar battery having high reliability, excellent electrical characteristics and optical characteristics, the reflecting electrode layer includes, on the photoelectric conversion layer side, a metal layer containing silver as a main component and containing nitrogen.
摘要翻译：一种太阳能电池，包括：将光转换成电的光电转换层; 以及反射电极层，其设置在光电转换层的光入射侧的相反侧，并将通过光电转换层的光反射到光电转换层侧，以实现具有优异的粘附性和热腐蚀性的反射电极层电阻，稳定的电特性和良好的光反射特性，并且获得具有高可靠性，优异的电特性和光学特性的太阳能电池，反射电极层在光电转换层侧包括含有银作为主要成分的金属层和含氮。

7. 发明授权

US08841541B2 Solar battery and method of manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08841541B2
公开(公告)日：2014-09-23
申请号：US13394023
申请日：2009-09-04
申请人： Takumi Nakahata , Kazunori Inoue , Yusuke Yamagata
发明人： Takumi Nakahata , Kazunori Inoue , Yusuke Yamagata
IPC分类号： H01L31/0224 , H01L31/0232 , H01L31/18 , H01L27/142 , H01L31/0392 , H01L31/052
CPC分类号： H01L31/0527 , H01L31/022425 , H01L31/02245 , H01L31/0392 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/056 , Y02E10/52
摘要： In a solar battery including: a photoelectric conversion layer that converts light into electricity; and a reflecting electrode layer that is provided on an opposite side of a light incident side in the photoelectric conversion layer and reflects light passed through the photoelectric conversion layer to the photoelectric conversion layer side, to realize a reflecting electrode layer having excellent adhesion and thermal corrosion resistance, stable electrical characteristics and satisfactory light reflection characteristics and to obtain a solar battery having high reliability, excellent electrical characteristics and optical characteristics, the reflecting electrode layer includes, on the photoelectric conversion layer side, a metal layer containing silver as a main component and containing nitrogen.
摘要翻译：一种太阳能电池，包括：将光转换成电的光电转换层; 以及反射电极层，其设置在光电转换层的光入射侧的相反侧，并将通过光电转换层的光反射到光电转换层侧，以实现具有优异的粘附性和热腐蚀性的反射电极层电阻，稳定的电特性和良好的光反射特性，并且获得具有高可靠性，优异的电特性和光学特性的太阳能电池，反射电极层在光电转换层侧包括含有银作为主要成分的金属层和含氮。

8. 发明授权

US06635938B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06635938B1
公开(公告)日：2003-10-21
申请号：US09716219
申请日：2000-11-21
申请人： Takumi Nakahata , Shigemitsu Maruno , Taisuke Furukawa , Naruhisa Miura , Toshiyuki Oishi , Yasunori Tokuda
发明人： Takumi Nakahata , Shigemitsu Maruno , Taisuke Furukawa , Naruhisa Miura , Toshiyuki Oishi , Yasunori Tokuda
IPC分类号： H01L2994
CPC分类号： H01L29/4983 , H01L21/823418 , H01L21/823468 , H01L29/41783 , H01L29/6656 , H01L29/66575 , H01L29/66628
摘要： A polysilicon nitride film is formed to cover a polysilicon gate. By heat treatment of the silicon nitride film in an oxygen atmosphere, a silicon oxinitride film is formed. By anisotropically etching the silicon oxinitride film and the silicon nitride film, a sidewall insulating film is formed. By epitaxial growth, selective silicon films of a prescribed film thickness are formed on source and drain regions. During this period, silicon islands are not deposited on the surface of sidewall insulating film. Consequently, a semiconductor device including a transistor of a superior electrical insulation can be obtained.
摘要翻译：形成多晶硅氮化物膜以覆盖多晶硅栅极。通过在氧气氛中对氮化硅膜进行热处理，形成硅氧氮化物膜。通过各向异性蚀刻氧氮化硅膜和氮化硅膜，形成侧壁绝缘膜。通过外延生长，在源极和漏极区域上形成规定膜厚度的选择性硅膜。在此期间，硅岛不会沉积在侧壁绝缘膜的表面上。因此，可以获得包括具有优异的电绝缘的晶体管的半导体器件。

9. 发明授权

US06232192B1 Method of manufacturing semiconductor device having sidewall portions removed 失效
标题翻译：制造具有去除侧壁部分的半导体器件的方法
公开(公告)号：US06232192B1
公开(公告)日：2001-05-15
申请号：US09484410
申请日：2000-01-18
申请人： Satoshi Yamakawa , Yasunori Tokuda , Takumi Nakahata , Taisuke Furukawa , Shigemitsu Maruno
发明人： Satoshi Yamakawa , Yasunori Tokuda , Takumi Nakahata , Taisuke Furukawa , Shigemitsu Maruno
IPC分类号： H01L21336
CPC分类号： H01L21/28194 , H01L21/2257 , H01L21/26586 , H01L21/28176 , H01L21/28247 , H01L21/28512 , H01L21/28518 , H01L21/28525 , H01L29/41775 , H01L29/41783 , H01L29/6653 , H01L29/66628
摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.
摘要翻译：源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。在栅电极的每个侧表面上形成侧壁氧化膜。在侧壁氧化膜下面的延伸部分E中形成有凹入部分。形成源/漏电极以填充凹部。因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

10. 发明授权

US07834962B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US07834962B2
公开(公告)日：2010-11-16
申请号：US12330105
申请日：2008-12-08
申请人： Tetsuya Satake , Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Takeshi Ono , Naoki Nakagawa , Suguru Nagae
发明人： Tetsuya Satake , Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Takeshi Ono , Naoki Nakagawa , Suguru Nagae
IPC分类号： G02F1/1333 , G02F1/1335
CPC分类号： G02F1/133305 , G02F1/133512 , G02F2001/133354
摘要： In a liquid crystal display (10) having a curved display surface, long sides of pixel structures (11) are arranged along the curve direction (Y) of the display surface and on a side of counter substrate provided is a black matrix having a black matrix opening (41a) whose length in the curve direction (Y) is not longer than E−L {(T1/2)+(T2/2)+d}/R, assuming that the length of the display surface in the curve direction (Y) is L, the thickness of an array substrate is T1, the thickness of the counter substrate is T2, the size of the gap between the array substrate and the counter substrate is d, the radius of curvature of the curved display surface is R and the length of a long side of a pixel electrode (29) provided in each of the pixel structures (11) is E. It thereby becomes possible to suppress display unevenness resulting from positional misalignment of the two substrates due to curvature and provide a liquid crystal display achieving a high-quality display image.
摘要翻译：在具有弯曲显示面的液晶显示器（10）中，像素结构（11）的长边沿着显示面的曲线方向（Y）配置，在相对基板的一侧设有具有黑色假设曲线中的显示面的长度，曲线方向（Y）的长度不长于E-L {（T1 / 2）+（T2 / 2）+ d} / R的矩阵开口41a 方向（Y）为L，阵列基板的厚度为T1，对置基板的厚度为T2，阵列基板与对置基板的间隔尺寸为d，曲面显示面的曲率半径是R，并且设置在每个像素结构（11）中的像素电极（29）的长边的长度为E.因此，由此可以抑制由于曲率而导致的两个基板的位置偏移导致的显示不均匀，并且提供实现高质量显示图像的液晶显示器。

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