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1. 发明授权

US08546804B2 Semiconductor device including a region containing nitrogen at an interface and display device 有权
标题翻译：半导体器件包括界面处含有氮的区域和显示装置
公开(公告)号：US08546804B2
公开(公告)日：2013-10-01
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , G02F1/136
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

2. 发明申请

US20120297595A1 METHOD FOR MANUFACTURING ACOUSTIC WAVE DEVICE 有权
标题翻译：制造声波装置的方法
公开(公告)号：US20120297595A1
公开(公告)日：2012-11-29
申请号：US13480253
申请日：2012-05-24
申请人： Kazunori INOUE , Tsutomu MIYASHITA , Kazuhiro MATSUMOTO
发明人： Kazunori INOUE , Tsutomu MIYASHITA , Kazuhiro MATSUMOTO
IPC分类号： H01L41/00
CPC分类号： H01L41/338 , H01L21/568 , H01L24/97 , H01L2224/04105 , H01L2224/11 , H01L2224/12105 , H01L2224/96 , H01L2924/18162 , H03H3/08 , H03H9/0576
摘要： A method for manufacturing an acoustic wave device includes: adhering wafer-shaped first and second piezoelectric substrates to a front face of a first and second adhesive sheet respectively and dividing the first and the second piezoelectric substrates into rectangles; adhering a third and fourth adhesive sheet to the first and second piezoelectric substrates respectively and moving at least one divided portions of the first and second piezoelectric substrates selectively to the third and fourth adhesive sheet respectively; moving the first piezoelectric substrate on the first adhesive sheet to the fourth adhesive sheet; and moving the second piezoelectric substrate on the second adhesive sheet to the third adhesive sheet.
摘要翻译：声波装置的制造方法包括：将晶片状的第一和第二压电基板分别粘合到第一和第二粘合片的正面，并将第一和第二压电基片分成矩形; 将第三和第四粘合片分别粘附到第一和第二压电基片上，并将第一和第二压电基片的至少一个分割部分分别选择性地移动到第三和第四粘合片; 将第一粘合片上的第一压电基板移动到第四粘合片; 并将第二粘合片上的第二压电基板移动到第三粘合片。

3. 发明申请

US20120105298A1 ACOUSTIC WAVE FILTER 有权
标题翻译：声波滤波器
公开(公告)号：US20120105298A1
公开(公告)日：2012-05-03
申请号：US13344274
申请日：2012-01-05
申请人： Kazunori Inoue , Takashi Matsuda , Michio Miura
发明人： Kazunori Inoue , Takashi Matsuda , Michio Miura
IPC分类号： H03H9/64 , H01Q1/50 , H03H9/72
CPC分类号： H03H9/02992 , H03H9/02952 , H03H9/6483 , H03H9/725
摘要： A configuration that reduces a parasitic capacitance between wires is achieved at a low cost. Disclosed is an acoustic wave filter provided with a piezoelectric substrate 1, resonators 2a and 2b that include a comb-shaped electrode formed on the piezoelectric substrate 1, a wiring portion 3 that is connected to the comb-shaped electrode, and a dielectric layer 4 formed to cover the comb-shaped electrode. The wiring portion 3 is provided with a lower layer wiring portion 3d that is disposed in the same layer as the comb-shaped electrode and an upper layer wiring portion 3e that is disposed on the lower layer wiring portion 3d. The upper layer wiring portion 3e includes a region that has a wider electrode width than the electrode width of the lower layer wiring portion 3d.
摘要翻译：以低成本实现降低电线之间的寄生电容的结构。公开了一种设置有压电基板1的谐波滤波器，包括形成在压电基板1上的梳状电极的谐振器2a和2b，连接到梳状电极的布线部分3和介电层4 形成为覆盖梳状电极。布线部分3设置有与梳状电极相同的层中的下层布线部分3d和布置在下层布线部分3d上的上层布线部分3e。上层布线部分3e包括具有比下层布线部分3d的电极宽度更宽的电极宽度的区域。

4. 发明授权

US07841064B2 Method of manufacturing an acoustic wave device 失效
标题翻译：制造声波装置的方法
公开(公告)号：US07841064B2
公开(公告)日：2010-11-30
申请号：US11987173
申请日：2007-11-28
申请人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
发明人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
IPC分类号： H04R31/00
CPC分类号： H03H3/08 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908
摘要： A method of manufacturing an acoustic wave device includes forming a first sealing portion on a substrate having an acoustic wave element thereon so that a functional region, in which an acoustic wave oscillates, of the acoustic wave element acts as a first non-covered portion and a cutting region for individuating acts as a second non-covered portion, forming a second sealing portion on the first sealing portion so as to cover the first non-covered portion and the second non-covered portion, and cutting off the substrate and the second sealing portion so that the second non-covered portion is divided.
摘要翻译：一种制造声波器件的方法包括在其上具有声波元件的衬底上形成第一密封部分，使得声波元件的声波振荡的功能区域用作第一非覆盖部分，用于个体化作为第二非覆盖部分的切割区域，在所述第一密封部分上形成第二密封部分以覆盖所述第一非覆盖部分和所述第二未覆盖部分，并且切断所述基板，并且所述第二密封部分密封部分，使得第二未覆盖部分被分割。

5. 发明申请

US20100148887A1 ELASTIC WAVE DEVICE, DUPLEXER USING THE SAME, AND COMMUNICATION APPARATUS USING THE DUPLEXER 有权
标题翻译：弹性波形装置，使用相同的双工器，以及使用双工器的通信装置
公开(公告)号：US20100148887A1
公开(公告)日：2010-06-17
申请号：US12711871
申请日：2010-02-24
申请人： Takashi MATSUDA , Kazunori Inoue , Michio Miura
发明人： Takashi MATSUDA , Kazunori Inoue , Michio Miura
IPC分类号： H03H9/205
CPC分类号： H03H9/6476 , H03H9/02992 , H03H9/6483
摘要： An elastic wave device includes resonators having a piezoelectric substrate, a resonation unit formed on the piezoelectric substrate, and reflectors formed on respective sides of the resonation unit on the piezoelectric substrate, and bumps formed on the piezoelectric substrate. The resonators are configured such that two or more split resonators are connected in parallel, and a bump is formed in a region sandwiched between reflectors of the split resonators.
摘要翻译：弹性波装置包括具有压电基板的谐振器，形成在压电基板上的谐振单元和形成在压电基板上的谐振单元的各侧上的反射器，以及形成在压电基板上的凸块。谐振器被配置为使得两个或更多个分离谐振器并联连接，并且在夹在分离谐振器的反射器之间的区域中形成凸块。

6. 发明授权

US07721411B2 Method of manufacturing an acoustic wave device 失效
标题翻译：制造声波装置的方法
公开(公告)号：US07721411B2
公开(公告)日：2010-05-25
申请号：US11987175
申请日：2007-11-28
申请人： Shunichi Aikawa , Jyouji Kimura , Keiji Tsuda , Kazunori Inoue , Takashi Matsuda
发明人： Shunichi Aikawa , Jyouji Kimura , Keiji Tsuda , Kazunori Inoue , Takashi Matsuda
IPC分类号： H04R31/00
CPC分类号： H03H3/08 , H03H9/1092 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/49798
摘要： A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern being continuously formed on a cutting region for individuating the wafer, a second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element and a third conductive pattern connecting the first conductive pattern and the second pattern; forming an insulating layer on the wafer so as to have an opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.
摘要翻译：一种制造声波器件的方法包括：在由具有声波元件的压电基片制成的晶片上形成导电图案，所述导电图案包括连续形成在用于个别晶片的切割区域上的第一导电图案，第二导电图案形成在要形成镀覆电极的电极区域上，并连接到声波元件;连接第一导电图案和第二图案的第三导电图案; 在所述晶片上形成绝缘层，以在所述第二导电图案上具有开口; 通过经由第一导电图案和第三导电图案向第二导电图案提供电流，在第二导电图案上形成电镀电极; 并沿着切割区域切割和分离晶片。

7. 发明申请

US20100078816A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100078816A1
公开(公告)日：2010-04-01
申请号：US12523550
申请日：2008-02-04
申请人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
发明人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
IPC分类号： H01L23/532 , H01L21/283
CPC分类号： G02F1/13439 , G02F1/133555 , G02F1/136227 , G02F2001/136295 , G02F2201/40 , G02F2202/06 , H01L27/124 , H01L29/458
摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.
摘要翻译：显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成或铝合金，并形成在中间杂质含有层上。在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

8. 发明申请

US20100013575A1 RESONANT DEVICE, COMMUNICATION MODULE, COMMUNICATION DEVICE, AND METHOD FOR MANUFACTURING RESONANT DEVICE 失效
标题翻译：共振装置，通信模块，通信装置和制造谐振装置的方法
公开(公告)号：US20100013575A1
公开(公告)日：2010-01-21
申请号：US12503558
申请日：2009-07-15
申请人： Kazunori INOUE , Tokihiro Nishihara , Takashi Matsuda , Shinji Taniguchi
发明人： Kazunori INOUE , Tokihiro Nishihara , Takashi Matsuda , Shinji Taniguchi
IPC分类号： H03H9/15
CPC分类号： H03H3/04 , H03H9/02133 , H03H9/583 , H03H9/588 , H03H2003/023
摘要： A resonant device includes first and second piezoelectric thin film resonators. The first piezoelectric thin film resonator includes a substrate, a first lower electrode formed on the substrate, a first piezoelectric film formed over the first lower electrode, and a first upper electrode formed on the piezoelectric film and opposed to the first lower electrode. The second piezoelectric thin film resonator includes a second lower electrode formed above the first upper electrode, a second piezoelectric film formed over the second lower electrode, and a second upper electrode formed on the piezoelectric film and opposed to the second lower electrode. The first membrane region in which the first lower electrode opposes to the first upper electrode through the first piezoelectric film and a second membrane region in which the second lower electrode opposes to the second upper electrode through the second piezoelectric film are laminated through a second cavity.
摘要翻译：谐振装置包括第一和第二压电薄膜谐振器。第一压电薄膜谐振器包括基板，形成在基板上的第一下电极，形成在第一下电极上的第一压电膜，以及形成在压电膜上并与第一下电极相对的第一上电极。第二压电薄膜谐振器包括形成在第一上电极上的第二下电极，形成在第二下电极上的第二压电薄膜和形成在压电薄膜上并与第二下电极相对的第二上电极。其中第一下部电极通过第一压电膜与第一上部电极相对的第一膜区域和通过第二压电膜将第二下部电极与第二上部电极相对的第二膜区域通过第二腔层叠。

9. 发明申请

US20090065942A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，显示器件及制造半导体器件的方法
公开(公告)号：US20090065942A1
公开(公告)日：2009-03-12
申请号：US12206187
申请日：2008-09-08
申请人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
发明人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
IPC分类号： H01L23/52 , H01L21/44
CPC分类号： H01L21/2855 , H01L23/53223 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
摘要翻译：半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的诸如源电极和漏电极的铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

10. 发明申请

US20080174207A1 ACOUSTIC WAVE DEVICE 有权
标题翻译：声波设备
公开(公告)号：US20080174207A1
公开(公告)日：2008-07-24
申请号：US12018460
申请日：2008-01-23
申请人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
发明人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
IPC分类号： H01L41/08
CPC分类号： H03H3/08 , H01L2224/11
摘要： An acoustic wave device includes an acoustic wave element formed on a substrate, a first seal portion provided on the substrate so as to form a cavity above the acoustic wave element, and a second seal portion provided on the first seal portion, the first seal portion having a step so that the first seal portion has a width on a first side and another width on a second side arranged so that the first side is closer than the second side to the substrate, and the width on the first side is greater than the another width on the second side.
摘要翻译：声波装置包括形成在基板上的声波元件，设置在基板上以在声波元件上方形成空腔的第一密封部分和设置在第一密封部分上的第二密封部分，第一密封部分具有使所述第一密封部在第一侧具有宽度，在所述第二侧具有第二侧的另一宽度，使得所述第一侧比所述基板的所述第二侧更靠近，所述第一侧的宽度大于所述第一侧的宽度第二侧的另一个宽度。

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