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1. 发明授权

US4948599A Continuous production process of cheese curds and production process of cheese therefrom 失效
标题翻译：奶酪凝乳的连续生产过程和奶酪的生产过程
公开(公告)号：US4948599A
公开(公告)日：1990-08-14
申请号：US337554
申请日：1989-04-13
申请人： Kazuhiko Sagara , Kunio Ueda , Toshikazu Shimada , Toshiaki Ishii
发明人： Kazuhiko Sagara , Kunio Ueda , Toshikazu Shimada , Toshiaki Ishii
IPC分类号： A23C19/028 , A23C19/05
CPC分类号： A23C19/051 , A23C19/0285
摘要： Disclosed herein is a process for the continuous and quick production of cheese curds from milk, which comprises cooling a concentrated milk which has been obtained by ultrafiltration, adjusting its pH to 4.8-5.8 without coagulation, adding a milk-coagulating enzyme and/or a lactic acid bacterium starter, and the quickly heating the resultant mixture to 25.degree.-84.degree. C., whereby cheese curds are continuously formed, the heating of the mixture preferably being effected by heating a permeate separated out by the ultrafiltration and then mixing the heated permeate with the mixture. The thus-obtained cheese curds affording cheese having smooth texture.
摘要翻译：本文公开了一种从牛奶中连续快速生产干酪凝乳的方法，其包括冷却通过超滤获得的浓缩乳，将其pH调节至4.8-5.8而不凝结，加入牛奶凝固酶和/或将所得混合物快速加热至25℃-84℃，由此连续形成干酪凝乳，混合物的加热优选通过加热通过超滤分离的渗透物，然后混合加热的与混合物渗透。由此获得的干酪凝乳提供具有光滑质地的干酪。

2. 发明授权

US5334398A Processes for the production of a cheese curd and cheese containing whey protein 失效
标题翻译：用于生产含有乳清蛋白的乳酪凝乳和乳酪的方法
公开(公告)号：US5334398A
公开(公告)日：1994-08-02
申请号：US917919
申请日：1992-07-21
申请人： Ryoichi Sueyasu , Kunio Ueda , Kazuhiko Sagara
发明人： Ryoichi Sueyasu , Kunio Ueda , Kazuhiko Sagara
IPC分类号： A23C9/142 , A23C19/028 , A23C19/05 , A23C9/12
CPC分类号： A23C19/0285 , A23C19/053
摘要： Efficient utilization of a whey protein for the production of cheese, which results from the cheese production as a by-product. The whey is concentrated by an ultrafiltration and added to the concentrated milk. A milk coagulating enzyme and a lactic acid bacteria starter were added to the resultant mixture together with warm or hot water with stirring to instantaneously elevate the temperature of the reaction mixture to coagulate and give the cheese curd.
摘要翻译：乳酪生产作为副产品产生乳清蛋白质的有效利用。将乳清通过超滤浓缩并加入到浓缩的牛奶中。将牛奶凝固酶和乳酸菌起始物与温水或热水一起搅拌加入到所得混合物中，以立即升高反应混合物的温度以凝结并给出干酪凝乳。

3. 发明申请

US20070192484A1 Distributed authentication system and communication control apparatus 审中-公开
标题翻译：分布式认证系统和通信控制装置
公开(公告)号：US20070192484A1
公开(公告)日：2007-08-16
申请号：US11338724
申请日：2006-01-25
申请人： Ryouji Yamaoka , Kazuhiko Sagara
发明人： Ryouji Yamaoka , Kazuhiko Sagara
IPC分类号： G06F15/173
CPC分类号： H04L63/08 , H04L63/0428
摘要： Provided is a distributed authentication system and a communication control apparatus which allow a user to use a service with retained security. The distributed authentication system includes: a terminal; a communication control apparatus; and a server for distributing a service, the terminal, the communication control apparatus, and the server being connected to one another through a communication network, the communication control apparatus controlling communication between the terminal and the server, and in the system: the communication control apparatus includes a judgment module for judging whether to approve an access request from the terminal to the server; and the judgment module calculates a security level for the access request, requests the terminal to retrieve detailed information corresponding to the calculated security level, and approves the access request by authenticating the terminal of an access request source based on the detailed information received from the terminal.
摘要翻译：提供了允许用户使用具有保留的安全性的服务的分布式认证系统和通信控制装置。分布式认证系统包括：终端; 通信控制装置; 以及用于通过通信网络彼此连接的用于分发服务的服务器，终端，通信控制装置和服务器，所述通信控制装置控制终端与服务器之间的通信，并且在系统中：通信控制装置包括判断模块，用于判断是否批准从终端到服务器的访问请求; 并且判断模块计算访问请求的安全级别，请求终端检索对应于所计算的安全级别的详细信息，并且基于从终端接收到的详细信息来认证访问请求源的终端来批准访问请求。

4. 发明申请

US20060198382A1 Communication node, communication network and method for updating database 审中-公开
标题翻译：通信节点，通信网络和更新数据库的方法
公开(公告)号：US20060198382A1
公开(公告)日：2006-09-07
申请号：US11352287
申请日：2006-02-13
申请人： Kazuhiko Sagara , Ryouji Yamaoka
发明人： Kazuhiko Sagara , Ryouji Yamaoka
IPC分类号： H04Q7/24 , H04L12/56 , H04L12/28
CPC分类号： H04L43/0817 , H04L41/0816 , H04L41/082 , H04L41/0856 , H04L43/0864 , H04L63/08 , H04W8/12
摘要： Authentication databases are exchanged by using a movement signal of a terminal as a trigger. Newly registered data is stored in an authentication database as differential data. As a result, at a time point when at least one terminal out of terminals to which new information has been registered moves from a domain to another, synchronization processing of the authentication databases will occur. For this reason, at a time point when a terminal reaches the destination, registration data of the terminal is already transferred to the authentication database at the destination, thus enabling to initiate communication without making new registration at the destination.
摘要翻译：通过使用终端的移动信号作为触发来交换认证数据库。新注册的数据作为差分数据存储在认证数据库中。结果，在已经登记有新信息的至少一个终端终端从一个域移动到另一个的时间点，将发生认证数据库的同步处理。为此，在终端到达目的地的时间点，终端的注册数据已经被传送到目的地的认证数据库，从而能够在目的地不进行新的注册的情况下发起通信。

5. 发明授权

US5357464A Semiconductor memory having writing and reading transistors, method of fabrication thereof, and method of use thereof 失效
标题翻译：具有写入和读取晶体管的半导体存储器，其制造方法及其使用方法
公开(公告)号：US5357464A
公开(公告)日：1994-10-18
申请号：US22937
申请日：1993-02-26
申请人： Shuji Shukuri , Toru Koga , Shinichiro Kimura , Digh Hisamoto , Kazuhiko Sagara , Tokuo Kure , Eiji Takeda
发明人： Shuji Shukuri , Toru Koga , Shinichiro Kimura , Digh Hisamoto , Kazuhiko Sagara , Tokuo Kure , Eiji Takeda
IPC分类号： H01L27/10 , G11C11/401 , G11C11/402 , H01L21/8242 , H01L27/108 , G11C11/40
CPC分类号： G11C11/401 , H01L27/108
摘要： Disclosed is a semiconductor memory having a self-amplifying cell structure, using (1) a writing transistor and (2) a reading transistor with a floating gate as a charge storage node for each memory cell, and a method of fabricating the memory cell. The writing transistor and reading transistor are of opposite conductivity type to each other; for example, the writing transistor uses a P-channel MOS transistor and the reading transistor (having the floating gate) uses an N-channel MOS transistor. The floating gate of the reading transistor is connected to a single bit line through a source-drain path of the writing transistor, the source-drain path of the reading transistor is connected between the single bit line and a predetermined potential, and the gate electrodes of the writing and reading transistors are connected to a single word line. At least the reading transistor can be formed in a trench, and the word line can be formed overlying the writing transistor and the reading transistor in the trench. Also disclosed is a method of operating the memory cell, wherein the voltage applied to the word line, in a standby condition, is intermediate to the voltage applied to the word line during the writing operation and during the reading operation.
摘要翻译：公开了具有自放大单元结构的半导体存储器，其使用（1）写入晶体管和（2）具有浮置栅极的读取晶体管作为每个存储单元的电荷存储节点，以及制造该存储单元的方法。写入晶体管和读取晶体管彼此具有相反的导电类型; 例如，写入晶体管使用P沟道MOS晶体管，并且读取晶体管（具有浮置栅极）使用N沟道MOS晶体管。读取晶体管的浮置栅极通过写入晶体管的源极 - 漏极连接到单个位线，读取晶体管的源极 - 漏极连接在单个位线和预定电位之间，并且栅电极的写和读晶体管连接到单个字线。至少读取晶体管可以形成在沟槽中，并且字线可以形成在沟槽中的写入晶体管和读取晶体管的上方。还公开了一种操作存储单元的方法，其中在备用状态下施加到字线的电压在写入操作期间和在读取操作期间施加到字线的电压的中间。

6. 发明授权

US5141888A Process of manufacturing semiconductor integrated circuit device having trench and field isolation regions 失效
标题翻译：制造具有TRENCH和现场隔离区域的半导体集成电路装置的制造方法
公开(公告)号：US5141888A
公开(公告)日：1992-08-25
申请号：US642922
申请日：1991-01-18
申请人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
发明人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
IPC分类号： H01L21/762 , H01L21/763 , H01L29/732
CPC分类号： H01L21/763 , H01L21/76224 , H01L29/7325 , Y10S148/05
摘要： A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the U-shaped grooves by thermal oxidation simultaneously with the formation of a silicon oxide film used to form isolation regions between each collector contact region and base region. No separate step is needed for forming the silicon oxide film between the collector contact region and the base region. The thickness of the silicon oxide film can be controlled, and has a sufficient thickness even at its two edges, i.e., at its boundaries with the U-shaped grooves, so that the bipolar transistors exhibit good electrical characteristics. Namely, the collector resistance thereof does not increase, and the breakdown voltage at the pn junction between the collector region and the base region does not decrease. The U-shaped grooves can each comprise narrow and deep sub-grooves, with thick oxide films formed on the surfaces of the sub-grooves and a thick oxide film formed on a surface of an area between the sub-grooves, and with wiring formed on the oxide on the area between the sub-grooves.

7. 发明授权

US4905078A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4905078A
公开(公告)日：1990-02-27
申请号：US84074
申请日：1987-08-11
申请人： Kazuhiko Sagara , Yoichi Tamaki , Noriyuki Homma , Tohru Nakamura
发明人： Kazuhiko Sagara , Yoichi Tamaki , Noriyuki Homma , Tohru Nakamura
IPC分类号： G11C11/411 , H01L21/8229 , H01L27/102
CPC分类号： H01L27/1025 , Y10S257/906 , Y10S257/926
摘要： A semiconductor device includes a semiconductor layer provided above a pair of bipolar transistors formed in a surface region of a semiconductor body. Schottky barrier diodes and resistors are formed in the semiconductor layer. The pair of bipolar transistors, the Schottky barrier diodes and the resistors are electrically connected to constitute a bipolar memory. Since the Schottky barrier diodes and the resistors can be formed above the bipolar transistors, an area required for the memory cell can be made greatly small and the occurrence of an hindrance caused by .alpha. particles is minimal.
摘要翻译：半导体器件包括设置在形成在半导体本体的表面区域中的一对双极晶体管之上的半导体层。在半导体层中形成肖特基势垒二极管和电阻。一对双极晶体管，肖特基势垒二极管和电阻器电连接以构成双极存储器。由于肖特基势垒二极管和电阻器可以形成在双极晶体管的上方，所以可以使存储单元所需的面积变得非常小，并且由α粒子引起的阻碍的发生是最小的。

8. 发明授权

US4812894A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4812894A
公开(公告)日：1989-03-14
申请号：US191761
申请日：1988-05-03
申请人： Tohru Nakamura , Kazuo Nakazato , Noriyuki Homma , Kazuhiko Sagara , Takeo Shiba , Tokuo Kure , Tetsuya Hayashida
发明人： Tohru Nakamura , Kazuo Nakazato , Noriyuki Homma , Kazuhiko Sagara , Takeo Shiba , Tokuo Kure , Tetsuya Hayashida
IPC分类号： H01L29/73 , H01L21/331 , H01L21/337 , H01L21/822 , H01L23/485 , H01L27/04 , H01L27/06 , H01L29/08 , H01L29/10 , H01L29/41 , H01L29/417 , H01L29/423 , H01L29/732 , H01L29/808 , H01L29/06
CPC分类号： H01L29/66272 , H01L23/485 , H01L27/0658 , H01L29/0804 , H01L29/0808 , H01L29/1004 , H01L29/41 , H01L29/41708 , H01L29/42304 , H01L29/42316 , H01L29/8083 , H01L2924/0002
摘要： A semiconductor device includes a first insulation film formed on a monocrystalline substrate and having an opening, a monocrystalline semiconductor layer formed so as to protrude into the first insulation film, and a conductive layer formed in contact with the side section of the monocrystalline semiconductor layer and extending over a second insulation film formed on the monocrystalline semiconductor layer.
摘要翻译：半导体器件包括形成在单晶衬底上并具有开口的第一绝缘膜，形成为突出到第一绝缘膜中的单晶半导体层和与单晶半导体层的侧部接触形成的导电层，以及在形成在单晶半导体层上的第二绝缘膜上延伸。

9. 发明授权

US07145146B2 Micro-spectroscopic measuring device and micro-chemical system 失效
标题翻译：微光谱测量装置和微观化学系统
公开(公告)号：US07145146B2
公开(公告)日：2006-12-05
申请号：US10788275
申请日：2004-03-01
申请人： Taro Ogawa , Toshiki Sugawara , Kazuhiko Hosomi , Masataka Shirai , Toshio Katsuyama , Kaoru Umemura , Masaru Izawa , Kazuhiko Sagara , Hiroshi Kakibayashi
发明人： Taro Ogawa , Toshiki Sugawara , Kazuhiko Hosomi , Masataka Shirai , Toshio Katsuyama , Kaoru Umemura , Masaru Izawa , Kazuhiko Sagara , Hiroshi Kakibayashi
IPC分类号： G01N21/35
CPC分类号： G01N21/31 , B01L3/502715 , B01L2200/027 , B01L2300/0654 , B01L2300/0816 , B01L2300/0887 , G01N21/05 , G01N2021/0346 , G01N2021/058 , G01N2201/0873
摘要： A micro-spectroscopic measuring device having a structure in which a spectroscopic element made of an array of photonic crystals with defects, flow paths for introducing a sample, and light detecting elements with sensitivity to a band from near infrared to infrared are stacked.
摘要翻译：具有这样的结构的微分光学测量装置被堆叠，其中由具有缺陷的光子晶体阵列制成的分光元件，用于引入样品的流动路径和对从近红外线到红外线的频带具有灵敏度的光检测元件。

10. 发明授权

US5118633A Method for manufacturing a BiCMOS semiconductor device 失效
标题翻译：制造BICMOS半导体器件的方法
公开(公告)号：US5118633A
公开(公告)日：1992-06-02
申请号：US557649
申请日：1990-07-25
申请人： Kazuhiko Sagara , Kiyoo Itoh , Goro Kitsukawa , Yoshifumi Kawamoto , Yoshiki Kawajiri
发明人： Kazuhiko Sagara , Kiyoo Itoh , Goro Kitsukawa , Yoshifumi Kawamoto , Yoshiki Kawajiri
IPC分类号： H01L21/8242 , H01L21/8249 , H01L27/06 , H01L27/10 , H01L27/108
CPC分类号： H01L21/8249 , H01L27/0623 , H01L27/10817 , Y10S148/144
摘要： Sources and drains of MOS transistors are formed after the formation of an emitter of a bipolar transistor, whereby the sources and drains are made smaller in thickness than the emitter. Since the sources and drains are not subjected to a high-temperature heat treatment conducted in the formation of the emitter, there is no fear of increase in thickness of the sources and drains caused by the diffusion of impurities. There can be formed a BiCMOS having a high integration density and superior characteristics.

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