专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4982243A Schottky contact 失效
标题翻译：肖特基接触
公开(公告)号：US4982243A
公开(公告)日：1991-01-01
申请号：US329825
申请日：1989-03-28
申请人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
发明人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
IPC分类号： H01L29/16 , H01L21/205 , H01L29/04 , H01L29/423 , H01L29/47 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L33/40 , H01L29/045 , H01L29/47 , H01L29/872 , H01L33/0033 , H01L33/34
摘要： A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface which inclines at an angle of not larger than 10.degree. to a (100) plane and said epitaxial diamond layer is formed on said surface, provides a device which has good thermal resistance and environmental resistance and which device can be easily highly integrated.
摘要翻译：一种肖特基接触，其包括单晶金刚石基底，形成在所述基底上的外延金刚石层和形成在所述外延金刚石层上的肖特基电极层，其中所述基底具有至少一个抛光表面，其倾斜不大于10° DEG至（100）面，并且所述外延金刚石层形成在所述表面上，提供具有良好耐热性和耐环境性的器件，并且该器件可以容易地高度集成。

2. 发明授权

US5242663A Method of and apparatus for synthesizing hard material 失效
标题翻译：用于合成硬质材料的方法和装置
公开(公告)号：US5242663A
公开(公告)日：1993-09-07
申请号：US584912
申请日：1990-09-18
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of and an apparatus for vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.

3. 发明授权

US5436036A Method of synthesizing hard material 失效
标题翻译：硬质材料的合成方法
公开(公告)号：US5436036A
公开(公告)日：1995-07-25
申请号：US79105
申请日：1993-06-17
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511 , B05D3/06
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.
摘要翻译：气相合成硬质材料的方法使用供给反应管（6）的原料气体，同时用规定频率的微波（18）向反应管（6）的区域照射，从而产生合成反应通过等离子体产生沿规定方向的硬质材料。在反应管（6）中，至少两个平板电极（17a，17b，19a，19b）在与微波（18）的电场垂直的方向上相互平行地排列，使得等离子体在平板电极（17a），17b，19a，19b），用于气相合成硬质材料。高功率的微波（18）通过波导（5）而不损耗地引入反应管（6），使得强电场能够均匀稳定地分布在相对的板电极之间。

4. 发明授权

US5400738A Method for producing single crystal diamond film 失效
标题翻译：单晶金刚石薄膜的制造方法
公开(公告)号：US5400738A
公开(公告)日：1995-03-28
申请号：US987557
申请日：1992-12-08
申请人： Hiromu Shiomi , Takahiro Imai , Naoji Fujimori
发明人： Hiromu Shiomi , Takahiro Imai , Naoji Fujimori
IPC分类号： C30B29/04 , C30B25/02
CPC分类号： C30B25/02 , C30B29/04 , Y10S117/919
摘要： A single crystal diamond film having good crystallinity and electrical and optical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas, a carbon containing compound and an oxygen-containing compound and growing a single crystal diamond film on a substrate in a vapor phase.
摘要翻译：具有良好的结晶度和电学和光学特性的单晶金刚石膜通过包括以下步骤的方法制备：将包含氢气，含碳化合物和含氧化合物的原料气体分解并生长单晶金刚石膜气相中的底物。

5. 发明授权

US5355568A Method of making a surface acoustic wave device 失效
标题翻译：制造表面声波装置的方法
公开(公告)号：US5355568A
公开(公告)日：1994-10-18
申请号：US158415
申请日：1993-11-29
申请人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25 , H01L41/22
CPC分类号： H03H9/02582 , H03H9/02622 , Y10T29/42
摘要： A surface acoustic wave device having a diamond layer, a piezoelectric layer and a comb-like electrode, in which the piezoelectric layer and the comb-like electrode are formed on a surface of the diamond layer, which surface has been contacted to a substrate used in the formation of the diamond layer by a vapor phase growth method, which device has high stability and can be produced economically.
摘要翻译：具有金刚石层，压电层和梳状电极的弹性表面波器件，其中压电层和梳状电极形成在金刚石层的表面上，该表面已经与所使用的衬底接触在通过气相生长法形成金刚石层时，该装置具有高稳定性并且可以经济地生产。

6. 发明授权

US5329208A Surface acoustic wave device and method for producing the same 失效
标题翻译：声表面波装置及其制造方法
公开(公告)号：US5329208A
公开(公告)日：1994-07-12
申请号：US894598
申请日：1992-06-05
申请人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25 , H01L41/18
CPC分类号： H03H9/02582 , H03H9/02622 , Y10T29/42
摘要： A surface acoustic wave device having a diamond layer, a piezoelectric layer and a comb-like electrode, in which the piezoelectric layer and the comb-like electrode are formed on a surface of the diamond layer, which surface has been contacted to a substrate used in the formation of the diamond layer by a vapor phase growth method, which device has high stability and can be produced economically.
摘要翻译：具有金刚石层，压电层和梳状电极的弹性表面波器件，其中压电层和梳状电极形成在金刚石层的表面上，该表面已经与所使用的衬底接触在通过气相生长法形成金刚石层时，该装置具有高稳定性并且可以经济地生产。

7. 发明授权

US5373171A Thin film single crystal substrate 失效
标题翻译：薄膜单晶基板
公开(公告)号：US5373171A
公开(公告)日：1994-12-13
申请号：US165734
申请日：1988-03-09
申请人： Takahiro Imai , Naoji Fujimori , Hideaki Nakahata
发明人： Takahiro Imai , Naoji Fujimori , Hideaki Nakahata
IPC分类号： H01L21/20 , H01L21/36 , H01L27/10
CPC分类号： H01L21/02376 , H01L21/02444 , H01L21/02521 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S438/931
摘要： A thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide, silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride, and optionally an intermediate layer between the base substrate and the thin film of single crystal, which optionally comprises an intermediate layer between the base substrate and the thin film of single crystal.
摘要翻译：一种可用于制造半导体的薄膜单晶衬底，包括由单晶金刚石制成的基底衬底和至少一种选自碳化硅，硅，氮化硼等的材料的单晶薄膜，氮化镓，氮化铟，氮化铝，磷化硼，硒化镉，锗，砷化镓，磷化镓，磷化铟，锑化锑，砷化铟，锑化锑，磷化铝，砷化铝，锑化锑，碲化镉，氧化锌，硫化锌，硒化锌和碲化锌，以及任选地在基底衬底和单晶薄膜之间的中间层，其任选地包括在基底衬底和单晶薄膜之间的中间层。

8. 发明授权

US5001452A Semiconducting diamond and process for producing the same 失效
标题翻译：半导体金刚石及其制造方法
公开(公告)号：US5001452A
公开(公告)日：1991-03-19
申请号：US201151
申请日：1988-06-02
申请人： Takahiro Imai , Hideaki Nakahata , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Naoji Fujimori
IPC分类号： C30B25/10 , H01L29/16 , H01L29/167
CPC分类号： H01L29/1602 , C30B25/105 , H01L29/167 , Y10T29/49082
摘要： A semiconducting diamond which contains diamond carbon and at least one dopant element selected from the group consisting of S, Se, and Cl, and a process for producing the same.
摘要翻译：一种含有金刚石碳和选自S，Se和Cl的至少一种掺杂剂元素的半导体金刚石及其制造方法。

9. 发明授权

US4952832A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US4952832A
公开(公告)日：1990-08-28
申请号：US425956
申请日：1989-10-24
申请人： Takahiro Imai , Hideaki Nakahata , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Naoji Fujimori
IPC分类号： H03H9/02
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device which comprises a piezoelectric layer, a carbonaceous layer which is selected from the group consisting of a diamond layer and a diamond-like carbon layer and formed on at least one surface of the piezoelectric layer, and at least a pair of interdigital transducer electrodes, can be used in an extremely high frequency region.
摘要翻译：一种声表面波器件，包括压电层，选自金刚石层和类金刚石碳层并形成在压电层的至少一个表面上的碳质层，以及至少一对叉指式换能器电极，可用于极高频率区域。

10. 发明授权

US6028020A Single crystal quartz thin film and preparation thereof 失效
标题翻译：单晶石英薄膜及其制备
公开(公告)号：US6028020A
公开(公告)日：2000-02-22
申请号：US567530
申请日：1995-12-05
申请人： Motoyuki Tanaka , Takahiro Imai , Naoji Fujimori
发明人： Motoyuki Tanaka , Takahiro Imai , Naoji Fujimori
IPC分类号： C30B5/00 , H03H3/02 , H03H9/19 , C03C10/12 , B05D3/02
CPC分类号： H03H9/19 , C30B29/18 , C30B5/00
摘要： A single crystal quartz thin film having a thickness of 5 nm to 50 .mu.m can be prepared by forming the thin film on a single crystal substrate by a sol-gel process and peeling the thin film from the substrate. The present invention can provide the single crystal quartz thin film at a low price without a large and complex apparatus.
摘要翻译：通过溶胶 - 凝胶法在单晶基板上形成薄膜，并从基板剥离薄膜，可以制备厚度为5nm〜50μm的单晶石英薄膜。本发明可以以低价格提供单晶石英薄膜而不需要大而复杂的装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式