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1. 发明申请

US20170229640A1 MAGNETIC MEMORY DEVICE 审中-公开
公开(公告)号：US20170229640A1
公开(公告)日：2017-08-10
申请号：US15267418
申请日：2016-09-16
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Masaki KADO , Tsuyoshi KONDO , Hirofumi MORISE , Yasuaki OOTERA , Takuya SHIMADA , Michael Arnaud Quinsat , Shiho NAKAMURA
IPC分类号： H01L43/02 , H01L43/12 , H01L43/10 , H01L27/22 , H01L43/08
CPC分类号： G11C11/1675 , G11C19/0841
摘要： According to one embodiment, a magnetic memory device includes a first magnetic body and a second magnetic body. The first magnetic body extends in a first direction. The second magnetic body extends in the first direction. A distance between the second magnetic body and the first magnetic body changes periodically along the first direction.

2. 发明申请

US20160276404A1 MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY 有权
标题翻译：磁记忆装置和磁记忆
公开(公告)号：US20160276404A1
公开(公告)日：2016-09-22
申请号：US15053461
申请日：2016-02-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shiho NAKAMURA , Michael Arnaud QUINSAT , Tsuyoshi KONDO
IPC分类号： H01L27/22 , H01L43/08 , H01L43/10 , H01L43/02
CPC分类号： H01L27/222 , G11C19/0841 , H01L43/10
摘要： A magnetic memory device according to an embodiment includes a first magnetic section, a read section, and a write section. The first magnetic section includes an extending portion. The extending portion extends in a first direction. The extending portion has a first interface and a second interface. The extending portion includes magnetic domains arranged along the first direction. Magnetization easy axis of the extending portion is directed along a second direction. The extending portion includes a first region and a second region. The first region contains at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium. The second region contains at least one second element selected from a second group consisting of iron, cobalt, nickel, boron, silicon, and phosphorus. Concentration of the first element in the second region is lower than concentration of the first element in the first region.
摘要翻译：根据实施例的磁存储器件包括第一磁性部分，读取部分和写入部分。第一磁性部分包括延伸部分。延伸部分沿第一方向延伸。延伸部具有第一界面和第二界面。延伸部分包括沿第一方向布置的磁畴。延伸部分的易磁化轴线沿着第二方向被引导。延伸部分包括第一区域和第二区域。第一区域包含至少一种选自由钆，铽，镝，钕和钬组成的第一组的第一元素。第二区域包含至少一个选自铁，钴，镍，硼，硅和磷的第二组中的第二元素。第二区域中的第一元素的浓度低于第一区域中的第一元素的浓度。

3. 发明申请

US20150302910A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20150302910A1
公开(公告)日：2015-10-22
申请号：US14610617
申请日：2015-01-30
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shiho NAKAMURA , Hirofumi MORISE , Tsuyoshi KONDO
IPC分类号： G11C11/16 , G11C5/14
CPC分类号： G11C11/161 , G11C5/147 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory according to an embodiment includes: a magnetic layer including a plurality of magnetic domains and a plurality of domain walls, and extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit flowing a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit writing information into the magnetic layer; a read unit reading information from the magnetic layer; and a voltage generating unit generating a voltage to be applied between the pinning layer and the electrode layer.
摘要翻译：根据实施例的磁存储器包括：包括多个磁畴和多个畴壁的磁性层，并沿一个方向延伸; 形成有非磁性相和磁性相的钉扎层，沿着磁性层的延伸方向延伸并位于与磁性层相邻的位置; 位于所述钉扎层的与所述磁性层相反的一侧的电极层; 绝缘层，位于钉扎层和电极层之间; 将移动电流流向磁性层的电流引入单元，导致畴壁移动的偏移电流; 写入单元将信息写入到磁性层中; 读取单元从磁性层读取信息; 以及产生施加在钉扎层和电极层之间的电压的电压产生单元。

4. 发明申请

US20150036422A1 MAGNETIC STORAGE ELEMENT, MAGNETIC STORAGE DEVICE, MAGNETIC MEMORY, AND METHOD OF DRIVING MAGNETIC STORAGE ELEMENT 有权
标题翻译：磁性存储元件，磁性存储器件，磁性存储器和驱动磁存储元件的方法
公开(公告)号：US20150036422A1
公开(公告)日：2015-02-05
申请号：US14341059
申请日：2014-07-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hirofumi MORISE , Yoshiaki FUKUZUMI , Shiho NAKAMURA , Tsuyoshi KONDO , Hideaki AOCHI , Takuya SHIMADA
IPC分类号： H01L27/22 , H01L43/02 , G11C11/16
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693 , H01L43/08
摘要： A magnetic storage element according to an embodiment includes: a magnetic nanowire having a cross-sectional area varying in a first direction, the magnetic nanowire having at least two positions where the cross-sectional area is minimal; first and second electrode groups having the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a first region where the first electrodes overlap the second electrodes with the magnetic nanowire interposed in between and a second region where neither the first electrodes nor the second electrodes exist with the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a third region where the first electrodes exist and the second electrodes do not exist with the magnetic nanowire interposed in between and a fourth region where the first electrodes do not exist and the second electrodes exist with the magnetic nanowire interposed in between.
摘要翻译：根据实施例的磁存储元件包括：具有在第一方向上变化的横截面积的磁性纳米线，所述磁性纳米线具有截面积最小的至少两个位置; 具有介于其间的磁性纳米线的第一和第二电极组，所述磁性纳米线包括第一电极与第二电极重叠的第一区域和介于其间的磁性纳米线的第一区域和第二区域中的至少一个，存在介于其间的磁性纳米线的第二电极，磁纳米线包括存在第一电极的第三区域和不存在插入在其间的磁性纳米线的第二电极和第一电极的第四区域中的至少一个不存在第二电极，并且介于其间的磁性纳米线存在。

5. 发明申请

US20140104941A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20140104941A1
公开(公告)日：2014-04-17
申请号：US14021096
申请日：2013-09-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuyoshi KONDO , Hirofumi MORISE , Shiho NAKAMURA , Takuya SHIMADA , Yoshiaki FUKUZUMI , Hideaki AOCHI
IPC分类号： G11C11/02
CPC分类号： G11C11/02 , B82Y10/00 , G11C11/161 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C21/00 , G11C2213/52 , Y10S977/762 , Y10S977/838 , Y10S977/943
摘要： A magnetic memory according to an embodiment includes: a magnetic nanowire; first insulating layers provided on a first surface of the magnetic nanowire, each of the first insulating layers having a first and second end faces, a thickness of the first insulating layer over the first end face being thicker than a thickness of the first insulating layer over the second end face; first electrodes on surfaces of the first insulating layers opposite to the first surface; second insulating layers on the second surface of the magnetic nanowire, each of the second insulating layers having a third and fourth end faces, a thickness of the second insulating layer over the third surface being thicker than a thickness of the second insulating layer over the fourth end face; and second electrodes on surfaces of the second insulating layers.
摘要翻译：根据实施例的磁存储器包括：磁性纳米线; 设置在所述磁性纳米线的第一表面上的第一绝缘层，每个所述第一绝缘层具有第一和第二端面，所述第一端面上的所述第一绝缘层的厚度比所述第一绝缘层的厚度厚第二个端面; 所述第一绝缘层与所述第一表面相对的表面上的第一电极; 在所述磁性纳米线的所述第二表面上的第二绝缘层，每个所述第二绝缘层具有第三和第四端面，所述第三绝缘层的厚度在所述第三表面上比第四绝缘层厚度大端面以及在第二绝缘层的表面上的第二电极。

6. 发明申请

US20160056205A1 MAGNETIC MEMORY, MAGNETIC MEMORY DEVICE, AND METHOD FOR MANUFACTURING MAGNETIC MEMORY 有权
标题翻译：磁记忆体，磁记忆体装置及制造磁记忆体的方法
公开(公告)号：US20160056205A1
公开(公告)日：2016-02-25
申请号：US14829080
申请日：2015-08-18
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shiho NAKAMURA , Yuuzo KAMIGUCHI , Yasuaki OOTERA , Tsuyoshi KONDO
IPC分类号： H01L27/22 , G11C11/16 , H01L43/12 , H01L43/02 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , G11C19/0841 , H01L43/02 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic memory including a first magnetic unit, a first nonmagnetic unit, a first fixed magnetic unit, a second fixed magnetic unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first nonmagnetic unit contacts one end of the first magnetic unit. The first fixed magnetic unit is separated from the first magnetic unit. The first fixed magnetic unit contacts the first nonmagnetic unit. The second fixed magnetic unit is separated from the first magnetic unit and the first fixed magnetic unit. The second fixed magnetic unit is in contact with the first nonmagnetic unit. The second fixed magnetic unit is magnetized in a direction different from a magnetization direction of the first fixed magnetic unit.
摘要翻译：根据一个实施例，一种包括第一磁单元，第一非磁单元，第一固定磁单元，第二固定磁单元，第一电极，第二电极和第三电极的磁存储器。第一磁性单元沿第一方向延伸。第一磁性单元包括沿第一方向布置的多个磁畴。第一非磁性单元接触第一磁性单元的一端。第一固定磁单元与第一磁单元分离。第一固定磁单元接触第一非磁性单元。第二固定磁性单元与第一磁性单元和第一固定磁性单元分离。第二固定磁性单元与第一非磁性单元接触。第二固定磁单元在与第一固定磁单元的磁化方向不同的方向上被磁化。

7. 发明申请

US20140085970A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20140085970A1
公开(公告)日：2014-03-27
申请号：US13953232
申请日：2013-07-29
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory includes a magnetic wire, a first insulating layer, first electrodes a second electrode, a current supplying module, and a voltage applying module. The magnetic wire includes a first portion and a second portion, has a first electric resistance value, and is configured to form magnetic domains. The first electrodes are formed on the first insulating layer, arranged along the magnetic wire, and spaced from each other. The second electrode includes a third portion and a fourth portion. The second electrode is electrically connected to the first electrodes between the third portion and the fourth portion and has a second electric resistance value being larger than the first electric resistance value. The current supplying module is configured to supply the magnetic wire with a pulse current. The voltage applying module is configured to apply a voltage that decreases with time.
摘要翻译：磁存储器包括磁线，第一绝缘层，第一电极，第二电极，电流供应模块和电压施加模块。磁线包括第一部分和第二部分，具有第一电阻值，并被构造成形成磁畴。第一电极形成在第一绝缘层上，沿着磁线布置并彼此间隔开。第二电极包括第三部分和第四部分。第二电极在第三部分和第四部分之间电连接到第一电极，并且具有大于第一电阻值的第二电阻值。电流供给模块被配置为向磁线供给脉冲电流。电压施加模块被配置为施加随时间减小的电压。

8. 发明申请

US20170263329A1 MAGNETIC MEMORY DEVICE 审中-公开
公开(公告)号：US20170263329A1
公开(公告)日：2017-09-14
申请号：US15252936
申请日：2016-08-31
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Michael Arnaud QUINSAT , Tsuyoshi KONDO , Hirofumi MORISE , Takuya SHIMADA , Yasuaki OOTERA , Masaki KADO , Shiho NAKAMURA
IPC分类号： G11C19/08
CPC分类号： G11C19/0833 , G11C19/0841
摘要： According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

9. 发明申请

US20160224242A1 MAGNETIC MEMORY DEVICE AND MAGNETIC STORAGE METHOD 有权
标题翻译：磁记忆装置和磁存储方法
公开(公告)号：US20160224242A1
公开(公告)日：2016-08-04
申请号：US15007794
申请日：2016-01-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuyoshi KONDO , Hirofumi MORISE , Yasuaki OOTERA , Takuya SHIMADA , Michael Amaud QUINSAT , Yoshiaki OSADA , Yoshihisa IWATA
IPC分类号： G06F3/06 , G11C11/16
CPC分类号： G06F3/061 , G06F3/0655 , G06F3/0683 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/02 , G11C19/0808
摘要： According to one embodiment, a magnetic memory device includes a first memory unit including a first memory array and a first drive unit, a second memory unit including a second memory array and a second drive unit, and a controller. The first memory array includes a first magnetic shift register unit. The second memory array includes a second magnetic shift register unit. The controller subdivides input data into a plurality of one-dimensional bit input arrays. The one-dimensional bit input arrays include a first array and a second array. The controller stores the first array in the first magnetic shift register unit on a last in, first out basis, and stores the second array in the second magnetic shift register unit on a last in, first out basis.
摘要翻译：根据一个实施例，一种磁存储器件包括：第一存储器单元，包括第一存储器阵列和第一驱动单元;第二存储器单元，包括第二存储器阵列和第二驱动单元;以及控制器。第一存储器阵列包括第一磁移位置寄存器单元。第二存储器阵列包括第二磁移位置寄存器单元。控制器将输入数据细分为多个一维位输入阵列。一维位输入阵列包括第一阵列和第二阵列。控制器将第一阵列存储在第一磁移位寄存器单元中，并以最先进先出的方式将第二阵列存储在第二磁移位寄存器单元中。

10. 发明申请

US20150380638A1 MAGNETIC MEMORY AND SHIFT REGISTER MEMORY 有权
标题翻译：磁记忆和移位寄存器存储器
公开(公告)号：US20150380638A1
公开(公告)日：2015-12-31
申请号：US14704359
申请日：2015-05-05
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yasuaki OOTERA , Takuya SHIMADA , Tsuyoshi KONDO , Hirofumi MORISE , Michael Arnaud QUINSAT , Shiho NAKAMURA
IPC分类号： H01L43/08 , H01L27/22 , H01L43/02
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C19/0808
摘要： According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.
摘要翻译：根据一个实施例，磁存储器包括第一磁性单元，第一磁性层，第一记录/再现元件，第一电极和第二电极。第一磁性单元沿第一方向延伸。第一磁性单元包括沿第一方向布置的多个磁畴。第一磁性单元具有中空部分的柱状结构。第一磁性层连接到第一磁性单元的第一端部，第一磁性层沿与第一方向相交的方向延伸。第一记录/再现元件设置成与第一磁性层接触。第一电极电连接到第一磁性层。第二电极在与第一端部相对的一侧连接到第一磁性单元的第二端部。

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