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1. 发明授权

US09293696B2 Magnetic memory and shift register memory 有权
标题翻译：磁存储器和移位寄存器存储器
公开(公告)号：US09293696B2
公开(公告)日：2016-03-22
申请号：US14704359
申请日：2015-05-05
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yasuaki Ootera , Takuya Shimada , Tsuyoshi Kondo , Hirofumi Morise , Michael Arnaud Quinsat , Shiho Nakamura
IPC分类号： H01L29/82 , H01L43/08 , H01L43/02 , H01L27/22
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C19/0808
摘要： According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.
摘要翻译：根据一个实施例，磁存储器包括第一磁性单元，第一磁性层，第一记录/再现元件，第一电极和第二电极。第一磁性单元沿第一方向延伸。第一磁性单元包括沿第一方向布置的多个磁畴。第一磁性单元具有中空部分的柱状结构。第一磁性层连接到第一磁性单元的第一端部，第一磁性层沿与第一方向相交的方向延伸。第一记录/再现元件设置成与第一磁性层接触。第一电极电连接到第一磁性层。第二电极在与第一端部相对的一侧连接到第一磁性单元的第二端部。

2. 发明授权

US08995163B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08995163B2
公开(公告)日：2015-03-31
申请号：US13761637
申请日：2013-02-07
申请人： Kabushiki Kaisha Toshiba
发明人： Shiho Nakamura , Hirofumi Morise , Tsuyoshi Kondo
IPC分类号： G11C19/00 , G11C11/16 , G11C11/14
CPC分类号： G11C11/161 , G11C5/147 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory according to an embodiment includes: a magnetic layer including a plurality of magnetic domains and a plurality of domain walls, and extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit flowing a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit writing information into the magnetic layer; a read unit reading information from the magnetic layer; and a voltage generating unit generating a voltage to be applied between the pinning layer and the electrode layer.
摘要翻译：根据实施例的磁存储器包括：包括多个磁畴和多个畴壁的磁性层，并沿一个方向延伸; 形成有非磁性相和磁性相的钉扎层，沿着磁性层的延伸方向延伸并位于与磁性层相邻的位置; 位于所述钉扎层的与所述磁性层相反的一侧的电极层; 绝缘层，位于钉扎层和电极层之间; 将移动电流流向磁性层的电流引入单元，导致畴壁移动的偏移电流; 写入单元将信息写入到磁性层中; 读取单元从磁性层读取信息; 以及产生施加在钉扎层和电极层之间的电压的电压产生单元。

3. 发明授权

US09659996B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09659996B2
公开(公告)日：2017-05-23
申请号：US14921472
申请日：2015-10-23
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： H01L29/66 , H01L27/22 , H01L43/08 , G11C11/16 , G11C19/08
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C19/0808 , G11C19/0841 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

4. 发明申请

US20160055892A1 Magnetic Memory Element and Magnetic Memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US20160055892A1
公开(公告)日：2016-02-25
申请号：US14722707
申请日：2015-05-27
申请人： Kabushiki Kaisha Toshiba
发明人： Takuya SHIMADA , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a third magnetic unit, a read/write unit, a first electrode, a second electrode, a third electrode, a first current source, the second current source. The third magnetic unit is connected to one end in the first direction of the first magnetic unit and one end in the first direction of the second magnetic unit. The read/write unit includes a nonmagnetic layer and a pinned layer. The nonmagnetic layer is connected to the third magnetic unit. The pinned layer is connected to the nonmagnetic layer. The first current source causes a current to flow between the third electrode and at least one of the first electrode or the second electrode. The second current source causes a current to flow between the first electrode and the second electrode.
摘要翻译：根据一个实施例，磁存储元件包括第一磁单元，第二磁单元，第三磁单元，读/写单元，第一电极，第二电极，第三电极，第一电流源，第二电流源当前来源。第三磁性单元连接到第一磁性单元的第一方向的一端和第二磁性单元的第一方向的一端。读/写单元包括非磁性层和固定层。非磁性层连接到第三磁性单元。固定层连接到非磁性层。第一电流源导致电流在第三电极和第一电极或第二电极中的至少一个之间流动。第二电流源导致电流在第一电极和第二电极之间流动。

5. 发明授权

US09153340B2 Magnetic storage element, magnetic storage device, magnetic memory, and driving method 有权
标题翻译：磁存储元件，磁存储器，磁存储器和驱动方法
公开(公告)号：US09153340B2
公开(公告)日：2015-10-06
申请号：US14081149
申请日：2013-11-15
申请人： Kabushiki Kaisha Toshiba
发明人： Hirofumi Morise , Yoshiaki Fukuzumi , Tsuyoshi Kondo , Shiho Nakamura , Hideaki Aochi
IPC分类号： G11C11/00 , G11C19/02 , G11C19/08 , H01L27/22 , H01L43/08
CPC分类号： G11C19/02 , G11C19/08 , H01L27/22 , H01L43/08
摘要： A magnetic storage element includes a magnetic nanowire. A cross-section of the magnetic nanowire has first and second visible outlines, the first visible outline has a first minimal point at which a distance from a virtual straight line becomes minimal, a second minimal point at which the distance from the virtual straight line becomes minimal, and a first maximal point at which the distance from the virtual straight line becomes longest between the first minimal point and the second minimal point, and an angle between a first straight line connecting the first minimal point and the second minimal point, and one of a second straight line connecting the first minimal point and the first maximal point and a third straight line connecting the second minimal point and the first maximal point is not smaller than four degrees and not larger than 30 degrees.
摘要翻译：磁存储元件包括磁性纳米线。磁纳米线的横截面具有第一和第二可视轮廓，第一可见轮廓具有从虚拟直线的距离变得最小的第一最小点，距离虚拟直线的距离变成第二最小点最小和第一最大点，在该第一最大点处，从虚拟直线到第一最小点和第二最小点之间的距离变得最长，以及连接第一最小点和第二最小点的第一直线之间的角度，以及一个连接第一最小点和第一最大点的第二直线和连接第二最小点和第一最大点的第三直线不小于四度且不大于30度。

6. 发明授权

US09142759B2 Magnetic memory device and method of magnetic domain wall motion 有权
标题翻译：磁存储器件及磁畴壁运动方法
公开(公告)号：US09142759B2
公开(公告)日：2015-09-22
申请号：US14310152
申请日：2014-06-20
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hirofumi Morise , Hideaki Fukuzawa , Akira Kikitsu , Yoshiaki Fukuzumi
IPC分类号： G11C11/15 , H01L43/08 , G11C11/16 , H01L27/22 , H01L41/09 , H01L41/12 , H01L43/10 , H01F10/32
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693 , H01F10/3236 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L27/228 , H01L41/0986 , H01L41/12 , H01L43/10
摘要： A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second electrode, a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers, a piezoelectric body provided on a opposite side to a side where the first electrode is provided in the laminated structure, and a third electrode applying voltage to the piezoelectric body and provided on a different position from a position where the first electrode is provided in the piezoelectric body.
摘要翻译：磁存储器件包括第一电极，第二电极，层叠结构，其包括设置在第一电极和第二电极之间的多个第一磁性层，第二磁性层包括与第一磁性层不同的组成元素，在多个第一磁性层之间，在层压结构中设置在与设置有第一电极的一侧相反的一侧的压电体，以及将第三电极向压电体施加电压，并且设置在与第一电极的位置不同的位置，电极设置在压电体中。

7. 发明授权

US08830718B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08830718B2
公开(公告)日：2014-09-09
申请号：US13953232
申请日：2013-07-29
申请人： Kabushiki Kaisha Toshiba
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C19/02 , G11C11/02 , G11C11/16
CPC分类号： G11C11/161 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory includes a magnetic wire, a first insulating layer, first electrodes a second electrode, a current supplying module, and a voltage applying module. The magnetic wire includes a first portion and a second portion, has a first electric resistance value, and is configured to form magnetic domains. The first electrodes are formed on the first insulating layer, arranged along the magnetic wire, and spaced from each other. The second electrode includes a third portion and a fourth portion. The second electrode is electrically connected to the first electrodes between the third portion and the fourth portion and has a second electric resistance value being larger than the first electric resistance value. The current supplying module is configured to supply the magnetic wire with a pulse current. The voltage applying module is configured to apply a voltage that decreases with time.
摘要翻译：磁存储器包括磁线，第一绝缘层，第一电极，第二电极，电流供应模块和电压施加模块。磁线包括第一部分和第二部分，具有第一电阻值，并被构造成形成磁畴。第一电极形成在第一绝缘层上，沿着磁线布置并彼此间隔开。第二电极包括第三部分和第四部分。第二电极在第三部分和第四部分之间电连接到第一电极，并且具有大于第一电阻值的第二电阻值。电流供给模块被配置为向磁线供给脉冲电流。电压施加模块被配置为施加随时间减小的电压。

8. 发明申请

US20140085970A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20140085970A1
公开(公告)日：2014-03-27
申请号：US13953232
申请日：2013-07-29
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory includes a magnetic wire, a first insulating layer, first electrodes a second electrode, a current supplying module, and a voltage applying module. The magnetic wire includes a first portion and a second portion, has a first electric resistance value, and is configured to form magnetic domains. The first electrodes are formed on the first insulating layer, arranged along the magnetic wire, and spaced from each other. The second electrode includes a third portion and a fourth portion. The second electrode is electrically connected to the first electrodes between the third portion and the fourth portion and has a second electric resistance value being larger than the first electric resistance value. The current supplying module is configured to supply the magnetic wire with a pulse current. The voltage applying module is configured to apply a voltage that decreases with time.
摘要翻译：磁存储器包括磁线，第一绝缘层，第一电极，第二电极，电流供应模块和电压施加模块。磁线包括第一部分和第二部分，具有第一电阻值，并被构造成形成磁畴。第一电极形成在第一绝缘层上，沿着磁线布置并彼此间隔开。第二电极包括第三部分和第四部分。第二电极在第三部分和第四部分之间电连接到第一电极，并且具有大于第一电阻值的第二电阻值。电流供给模块被配置为向磁线供给脉冲电流。电压施加模块被配置为施加随时间减小的电压。

9. 发明授权

US09886199B2 Magnetic memory device and magnetic storage method 有权
公开(公告)号：US09886199B2
公开(公告)日：2018-02-06
申请号：US15007794
申请日：2016-01-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuyoshi Kondo , Hirofumi Morise , Yasuaki Ootera , Takuya Shimada , Michael Amaud Quinsat , Yoshiaki Osada , Yoshihisa Iwata
IPC分类号： G06F3/06 , G11C11/16 , G11C19/02 , G11C19/08
CPC分类号： G06F3/061 , G06F3/0655 , G06F3/0683 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/02 , G11C19/0808
摘要： According to one embodiment, a magnetic memory device includes a first memory unit including a first memory array and a first drive unit, a second memory unit including a second memory array and a second drive unit, and a controller. The first memory array includes a first magnetic shift register unit. The second memory array includes a second magnetic shift register unit. The controller subdivides input data into a plurality of one-dimensional bit input arrays. The one-dimensional bit input arrays include a first array and a second array. The controller stores the first array in the first magnetic shift register unit on a last in, first out basis, and stores the second array in the second magnetic shift register unit on a last in, first out basis.

10. 发明授权

US09548093B2 Magnetic memory element and magnetic memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US09548093B2
公开(公告)日：2017-01-17
申请号：US14722707
申请日：2015-05-27
申请人： Kabushiki Kaisha Toshiba
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： G11C11/16 , H01L43/08
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： A magnetic memory element includes a first magnetic unit, a second magnetic unit, a third magnetic unit, a read/write unit, a first electrode, a second electrode, a third electrode, a first current source, the second current source. The third magnetic unit is connected to one end in the first direction of the first magnetic unit and one end in the first direction of the second magnetic unit. The read/write unit includes a nonmagnetic layer and a pinned layer. The nonmagnetic layer is connected to the third magnetic unit. The pinned layer is connected to the nonmagnetic layer. The first current source causes a current to flow between the third electrode and at least one of the first electrode or the second electrode. The second current source causes a current to flow between the first electrode and the second electrode.
摘要翻译：磁存储元件包括第一磁单元，第二磁单元，第三磁单元，读/写单元，第一电极，第二电极，第三电极，第一电流源，第二电流源。第三磁性单元连接到第一磁性单元的第一方向的一端和第二磁性单元的第一方向的一端。读/写单元包括非磁性层和固定层。非磁性层连接到第三磁性单元。固定层连接到非磁性层。第一电流源导致电流在第三电极和第一电极或第二电极中的至少一个之间流动。第二电流源导致电流在第一电极和第二电极之间流动。

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