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1. 发明授权

US4750680A Vertically controlled track sander 失效
标题翻译：垂直控制砂光机
公开(公告)号：US4750680A
公开(公告)日：1988-06-14
申请号：US58965
申请日：1987-06-08
申请人： Junichi Shigeura , Noriyuki Isoda , Nobuyoshi Takahashi
发明人： Junichi Shigeura , Noriyuki Isoda , Nobuyoshi Takahashi
IPC分类号： B60B39/08 , B61C15/10 , B60B39/04
CPC分类号： B60B39/086 , B61C15/10
摘要： A device for increasing the factor of adhesion between the wheel of a railway vehicle and a rail, in which adhesion increasing grains are ejected together with air to a point between the wheel and the rail. The vertical aim of the ejection nozzle is automatically controlled depending on the deflection of an elastic member between the undercarriage and the wheel.
摘要翻译：一种用于增加铁路车辆的车轮与轨道之间的粘合系数的装置，其中附着力增加的颗粒与空气一起喷射到车轮和轨道之间的点处。喷嘴的垂直目标根据起落架和车轮之间的弹性件的偏转自动控制。

2. 发明授权

US4747627A Apparatus for improving adhesion of a railway vehicle 失效
标题翻译：用于改善铁路车辆的附着力的装置
公开(公告)号：US4747627A
公开(公告)日：1988-05-31
申请号：US913280
申请日：1986-09-30
申请人： Junichi Shigeura , Nobuyoshi Takahashi , Noriyuki Isoda
发明人： Junichi Shigeura , Nobuyoshi Takahashi , Noriyuki Isoda
IPC分类号： B61C15/10
CPC分类号： B61C15/102
摘要： A sanding apparatus improves adhesion between a railcar wheel and a rail by supplying adhesion intensifying particles to the contact faces. Sand and/or quartz particles, having diameters such that at least 50% of the particles are 100 to 300 micrometers, are mixed with compressed air and jetted at high velocity through a U-shaped storage chamber, out a nozzle, to the wheel-rail contact area. In the nozzle, a compressed air supply pipe surrounds and projects beyond the end of the particle supply pipe to create an air curtain surrounding the jetted particles. A heater, a heat insulation member, or constantly leaking air may be used to prevent freezing in the pipes.
摘要翻译：打磨装置通过向接触面提供粘附增强颗粒来提高轨道车轮与轨道之间的粘合性。具有使至少50％的颗粒为100至300微米的直径的砂和/或石英颗粒与压缩空气混合并通过U形储存室高速喷射出喷嘴，铁路接触区域。在喷嘴中，压缩空气供应管围绕并突出超出颗粒供应管的端部，以产生围绕喷射颗粒的气帘。可以使用加热器，隔热构件或不断泄漏的空气来防止管道中的冻结。

3. 发明授权

US08076196B2 Semiconductor device and fabrication method for the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08076196B2
公开(公告)日：2011-12-13
申请号：US12899164
申请日：2010-10-06
申请人： Nobuyoshi Takahashi
发明人： Nobuyoshi Takahashi
IPC分类号： H01L21/00
CPC分类号： H01L27/11573 , H01L27/0248 , H01L27/0629 , H01L27/105
摘要： The semiconductor device includes: memory cells each having a first multilayer electrode including a first lower electrode made of a first conductive film and a first upper electrode made of a second conductive film formed one on the other with a first interface film therebetween; and a diode having a diode electrode made of the second conductive film and a second interface film as a silicon oxide film formed at the interface between the diode electrode and a substrate. The first interface film has a thickness with which electrical connection between the lower electrode and the upper electrode is maintained, and the second interface film has a thickness with which epitaxial growth between the substrate and the diode electrode is inhibited.
摘要翻译：半导体器件包括：各自具有第一多层电极的存储单元，所述第一多层电极包括由第一导电膜制成的第一下部电极和由其间形成有第一界面膜的第二导电膜形成的第一上部电极; 以及具有由第二导电膜制成的二极管电极和形成在二极管电极和基板之间的界面处的氧化硅膜的第二界面膜的二极管。第一界面膜具有保持下电极和上电极之间的电连接的厚度，并且第二界面膜具有抑制衬底和二极管电极之间的外延生长的厚度。

4. 发明申请

US20090321814A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20090321814A1
公开(公告)日：2009-12-31
申请号：US12433535
申请日：2009-04-30
申请人： Koichi KAWASHIMA , Nobuyoshi Takahashi
发明人： Koichi KAWASHIMA , Nobuyoshi Takahashi
IPC分类号： H01L29/792 , H01L29/788 , H01L21/336
CPC分类号： H01L27/11521 , H01L27/11519 , H01L27/11526 , H01L27/11541
摘要： A semiconductor memory device includes, in a memory region, a plurality of bit line diffusion layers, a plurality of word lines, and a plurality of memory elements composed of a bit line diffusion layer pair, a gate insulating film, and a gate electrode. The plurality of bit line diffusion layers are divided into plural in respective columns, and are connected electrically to each other through bit line contact diffusion layers. The width of sidewall insulating films on the sides of the bit line contact diffusion layers formed at the word lines arranged adjacent to the bit line contact diffusion layers is smaller than that of the sidewall insulating films formed on the opposite sides of the bit line contact diffusion layers.
摘要翻译：半导体存储器件在存储区域中包括多个位线扩散层，多个字线以及由位线扩散层对，栅极绝缘膜和栅电极组成的多个存储元件。多个位线扩散层在各列中被分成多个，并且通过位线接触扩散层彼此电连接。形成在与位线接触扩散层相邻的字线处形成的位线接触扩散层的侧壁上的侧壁绝缘膜的宽度小于在位线接触扩散的相对侧上形成的侧壁绝缘膜的宽度层。

5. 发明申请

US20090057767A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法及其驱动方法
公开(公告)号：US20090057767A1
公开(公告)日：2009-03-05
申请号：US12197541
申请日：2008-08-25
申请人： Nobuyoshi Takahashi , Keita Takahashi
发明人： Nobuyoshi Takahashi , Keita Takahashi
IPC分类号： H01L27/092 , H01L21/8238 , H03K3/353
CPC分类号： H01L27/105 , H01L27/0251
摘要： A semiconductor device includes a protected device formed on a semiconductor substrate, a first protection transistor formed in a second well of a second conductivity type, and a second protection transistor formed in a first well of a first conductivity type. A fourth source/drain diffusion layer of the second protection transistor is in contact with a second diffusion layer, and a third source/drain diffusion layer is in contact with a second source/drain diffusion layer of the first protection transistor in the second well. A first source/drain diffusion layer of the first protection transistor is in contact with a first diffusion layer, which is in contact with a protected device electrode.
摘要翻译：半导体器件包括形成在半导体衬底上的受保护器件，形成在第二导电类型的第二阱中的第一保护晶体管和形成在第一导电类型的第一阱中的第二保护晶体管。第二保护晶体管的第四源极/漏极扩散层与第二扩散层接触，并且第三源极/漏极扩散层与第二阱中的第一保护晶体管的第二源极/漏极扩散层接触。第一保护晶体管的第一源极/漏极扩散层与与被保护器件电极接触的第一扩散层接触。

6. 发明申请

US20080048247A1 Semiconductor device and semiconductor device fabrication method 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20080048247A1
公开(公告)日：2008-02-28
申请号：US11806887
申请日：2007-06-05
申请人： Koji Yoshida , Masataka Kusumi , Hiroaki Kuriyama , Fumihiko Noro , Nobuyoshi Takahashi
发明人： Koji Yoshida , Masataka Kusumi , Hiroaki Kuriyama , Fumihiko Noro , Nobuyoshi Takahashi
IPC分类号： H01L29/792 , H01L21/336 , H01L21/4763
CPC分类号： H01L29/792 , H01L21/0217 , H01L21/02211 , H01L21/02222 , H01L21/02271 , H01L21/02337 , H01L21/28282 , H01L21/3125 , H01L21/3185 , H01L21/76834 , H01L27/115 , H01L27/11568 , H01L29/4234 , H01L29/511 , H01L29/7923
摘要： A semiconductor device includes: source/drain regions formed in a semiconductor substrate; a trapping film for storing information by accumulating charges, the trapping film being formed in a region on the semiconductor substrate which includes a region on a channel region between the source/drain regions; and gate electrodes formed on the trapping film. A silicon nitride film containing carbon is formed by low pressure CVD using an organic material so as to cover the gate electrodes and a part of the trapping film which is located between adjacent gate electrodes.
摘要翻译：半导体器件包括：形成在半导体衬底中的源/漏区; 用于通过累积电荷来存储信息的捕集膜，所述捕获膜形成在所述半导体衬底上的包括所述源极/漏极区之间的沟道区域上的区域的区域中; 以及形成在捕获膜上的栅电极。通过使用有机材料的低压CVD形成含有碳的氮化硅膜，以覆盖位于相邻栅电极之间的栅电极和捕获膜的一部分。

7. 发明授权

US06623885B1 Power source element having connecting terminals 失效
标题翻译：具有连接端子的电源元件
公开(公告)号：US06623885B1
公开(公告)日：2003-09-23
申请号：US09502707
申请日：2000-02-11
申请人： Shunji Watanabe , Nobuyoshi Takahashi , Hideharu Onodera , Tsugio Sakai
发明人： Shunji Watanabe , Nobuyoshi Takahashi , Hideharu Onodera , Tsugio Sakai
IPC分类号： H01M230
CPC分类号： H01M2/0222 , H01G9/008 , H01M2/10 , H01M2/30 , H01M10/0525
摘要： A power source element has a positive electrode case, a negative electrode case, and a pair of connecting terminals, each having a first end portion connected to a respective one of the positive and negative electrode cases, a second end portion for connection to a circuit board, and an intermediate portion disposed between the first and second end portions. The intermediate portion of each of the connecting terminals has a weakened region so that the first end portion is separated from the second end portion along a weakened line in the weakened region upon relative movement between the first and second end portions in a give direction.
摘要翻译：电源元件具有正极壳体，负极壳体和一对连接端子，每个连接端子具有连接到正极和负极壳体中的相应一个的第一端部，用于连接到电路的第二端部以及设置在第一和第二端部之间的中间部分。每个连接端子的中间部分具有弱化区域，使得当在给定方向上在第一和第二端部之间相对运动时，第一端部沿着弱化区域中的弱化线与第二端部分离。

8. 发明授权

US06180568B2 4-aryl-4-substituted pyrazolidine-3, 5-dione derivatives 失效
标题翻译： 4-芳基-4-取代的吡唑烷-3,5-二酮衍生物
公开(公告)号：US06180568B2
公开(公告)日：2001-01-30
申请号：US09509821
申请日：2000-04-19
申请人： Nobuyoshi Takahashi , Hirofumi Nakagawa , Yoshinori Endo
发明人： Nobuyoshi Takahashi , Hirofumi Nakagawa , Yoshinori Endo
IPC分类号： A01N4356
CPC分类号： A01N43/90 , A01N43/56 , C07D233/76 , C07D233/92
摘要： A 4-aryl-4-substituted pyrazolidine-3,5-dione derivative represented by the formula (1) is useful as an effective component of a miticide, insecticide or herbicide wherein R1 and R2 are each independently alkyl group having 1 to 4 carbon atoms, or R1 and R2, when taken together, represent saturated or unsaturated bivalent hydrocarbon group having 3 or 4 carbon atoms which may optionally be substituted with alkyl group having 1 to 4 carbon atoms, or halogen atom, X is alkyl group having 1 to 4 carbon atoms, haloalkyl group having 1 to 4 carbon atoms or halogen atom, Y is halogen atom or nitro group, and n is an integer of 0 to 3.
摘要翻译：由式（1）表示的4-芳基-4-取代的吡唑烷-3,5-二酮衍生物可用作杀螨剂，杀虫剂或除草剂的有效成分，其中R 1和R 2各自独立地为具有1至4个碳原子的烷基或R 1和R 2一起表示具有3或4个碳原子的饱和或不饱和二价烃基，其可以任选被具有1至4个碳原子的烷基取代，或卤素原子，X是具有1-4个碳原子的烷基碳原子数为1〜4的卤代烷基或卤素原子，Y为卤素原子或硝基，n为0〜3的整数。

9. 发明授权

US5195577A Cooling device for power semiconductor switching elements 失效
标题翻译：用于功率半导体开关元件的冷却装置
公开(公告)号：US5195577A
公开(公告)日：1993-03-23
申请号：US602866
申请日：1990-10-24
申请人： Takashi Kameda , Nobuyoshi Takahashi , Takeo Yoshioka , Kenichi Mori , Masahiro Ashiya
发明人： Takashi Kameda , Nobuyoshi Takahashi , Takeo Yoshioka , Kenichi Mori , Masahiro Ashiya
IPC分类号： F28D15/02 , H01L23/427 , H05K7/20
CPC分类号： H01L23/427 , F28D15/0266 , F28F1/32 , F28F2250/08 , H01L2924/0002
摘要： A boiling type cooling device for cooling power semiconductors includes an evaporator containing an aqueous solution of ethylene glycol as a cooling medium, a condenser; and a vapor and liquid return pipe. According to a first aspect, the lowest portion of the condensor is at a level higher than the top surface of the cooling medium in the evaporator, the bottom surfaces of the condensor being tilted downward toward the top end of the liquid return pipe. According to another aspect, a pump is provided in the liquid return pipe for driving cooling medium to the evaporator. According to still other aspects, the liquid return pipe is covered with a heat insulating material, or a rubber string extends centrally therewithin. A deaeration device for the aqueous solution of ethylene glycol includes two separate deaeration baths and a mixing bath.

10. 外观设计

USD302853S Finned heat exchanger for electronic equipment 失效
公开(公告)号：USD302853S
公开(公告)日：1989-08-15
申请号：US773614
申请日：1985-09-09
申请人： Nobuyoshi Takahashi , Yoshihiko Yamamoto , Masao Fujii , Yu Seshimo
设计人： Nobuyoshi Takahashi , Yoshihiko Yamamoto , Masao Fujii , Yu Seshimo

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