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    • 4. 发明授权
    • Wavelength-controllable voltage-phase photodiode optoelectronic switch
(
    • 波长可控电压相位光电二极管光电开关(“opsistor”)
    • US5837995A
    • 1998-11-17
    • US755729
    • 1996-11-25
    • Alan Y. ChowVincent Y. Chow
    • Alan Y. ChowVincent Y. Chow
    • G01D21/00H01L25/16H01L27/14H01L27/146H01L31/08H01L31/10H03K17/00H03K17/78H04B10/00H04N7/24H01J40/14
    • H04B10/032H04N3/1506H04N3/1512H04N3/155
    • A wavelength-portion controllable optoelectronic switch ("Opsistor") capable of rapid switch frequencies fabricated as a monolithic integrated circuit is disclosed. The Opsistor is comprised of two inverse parallel photodiodes in close proximity, preferably on a monolithic silicon substrate, such that the anode of one photodiode is electrically connected via a first conductor to the cathode of the second photodiode, and the cathode of the first photodiode is electrically connected via a second conductor to the anode of the second photodiode. The voltage-phase of the Opsistor is determined by the relative illumination to the Opsistor's two photodiodes and is rapidly switchable. As a receiving device for data signals, the Opsistor receives programming signals from a transmitter light source. By using different wavelength-portion bandwidth pass filters on each of the two Opsistor photodiodes, a OPS-F device is created, and by using a two-wavelength transmitter light source designated as TM2, a TM2/OPS-F system is created capable of high data transmission rates, and high resistance to signal noise. Applications suitable for the Opsistor and TM2/OPS-F system include high speed optocouplers, linear optical position sensors, edge and target detection sensors, image recognition sensors, the basic subunits of optically based state computers, and high resolution optical encoders.
    • 公开了一种能够制造为单片集成电路的快速开关频率的波长部分可控光电开关(“Opsistor”)。 Ops电阻由紧邻的两个反并联光电二极管组成,最好在单片硅衬底上,使得一个光电二极管的阳极经由第一导体与第二光电二极管的阴极电连接,第一光电二极管的阴极 经由第二导体电连接到第二光电二极管的阳极。 Opsistor的电压相位由Opsistor的两个光电二极管的相对照度决定,可快速切换。 作为数据信号的接收装置,Opsistor接收来自发射器光源的编程信号。 通过在两个Opsistor光电二极管中的每一个上使用不同的波长部分带通滤波器,创建了OPS-F器件,并且通过使用被称为TM2的双波长发射器光源,创建TM2 / OPS-F系统, 高数据传输速率,高抗信号噪声。 适用于Opsistor和TM2 / OPS-F系统的应用包括高速光耦合器,线性光学位置传感器,边缘和目标检测传感器,图像识别传感器,基于光学的状态计算机的基本子单元和高分辨率光学编码器。
    • 6. 发明授权
    • Reading apparatus using two readout circuits connected in reverse order
    • 读取装置使用两个以相反顺序连接的读出电路
    • US5283669A
    • 1994-02-01
    • US727906
    • 1991-07-10
    • Kazuhiro SakaiMamoru Nobue
    • Kazuhiro SakaiMamoru Nobue
    • H04N1/19H04N1/024
    • H04N3/1506H04N3/1581
    • A reading apparatus having a photo-detecting element array constituted by a plurality of photo-detecting element blocks each constituted by a plurality of photo-detecting elements, and having switching elements for transferring charges generated in the photo-detecting elements block by block to an output circuit, in which the output circuit has wirings having no crossing portions and the outputs of the photo-detecting elements can be produced as time-series signals without requiring any external memory. In the reading apparatus, the switching elements are selected block by block of the photo-detecting element array, the blocks are commonly connected so that the respective orders of adjacent two of the blocks in the output circuit are opposite to each other, and an output of the output circuit is selected by two selection circuits synchronized with the selection of the switching elements, the two selection circuits respectively having selection orders which are opposite to each other, whereby the selection circuits are switched block by block of the photo-detecting element array to thereby obtain a time-series output.
    • 一种读取装置,具有由多个光检测元件块构成的光检测元件阵列,每个光检测元件块由多个光检测元件构成,并具有用于将光检测元件中产生的电荷逐块传输到的开关元件 输出电路,其中输出电路具有不具有交叉部分的布线,并且可以产生光检测元件的输出作为时间序列信号,而不需要任何外部存储器。 在读取装置中,光电检测元件阵列逐块地选择开关元件,这些块通常连接,使得输出电路中相邻的两个块的相应顺序彼此相反,并且输出 输出电路的两个选择电路与选择开关元件同步的两个选择电路选择,两个选择电路分别具有彼此相反的选择顺序,由此选择电路逐块切换光电检测元件阵列 从而获得时间序列输出。
    • 9. 发明授权
    • Non-crystalline device memory array
    • 非晶体器件存储器阵列
    • US3979586A
    • 1976-09-07
    • US530897
    • 1974-12-09
    • David D. Thornburg
    • David D. Thornburg
    • G11C13/00G11C11/39G11C13/04G11C16/02H01J39/12
    • G11C13/0004G11C11/39G11C13/048H04N3/1506Y10T307/773
    • An erasable optical memory array having at each storage location a non-crystalline, semiconductor threshold switching device. The threshold voltage of each switching device is strongly temperature dependent and each switching device has a finite recovery time when switched to its low resistance state. Means are provided for periodically sampling each of the switching devices with voltage pulses repetitive at a first frequency and having a first voltage level sufficient to switch to the low resistance state only those switching devices heated above room temperature by a thermal image. Additional means are provided to sample the switching devices at a second frequency greater than the first frequency and at a voltage level less than that of the first voltage level to maintain the switched devices in the low resistance state upon removal of the thermal image.
    • 一种在每个存储位置处具有非晶体半导体阈值切换装置的可擦除光学存储器阵列。 每个开关器件的阈值电压是强烈的温度依赖性的,并且当切换到其低电阻状态时,每个开关器件具有有限的恢复时间。 提供了用于以第一频率重复的电压脉冲对每个开关装置进行周期性采样的装置,并且具有足以仅通过热图像将那些被加热到室温以上的开关装置切换到低电阻状态的第一电压电平。 提供附加装置以大于第一频率的第二频率和小于第一电压电平的电压电平对开关装置进行采样,以在去除热图像时保持开关装置处于低电阻状态。