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1. 发明授权

US06591850B2 Method and apparatus for fluid flow control 失效
公开(公告)号：US06591850B2
公开(公告)日：2003-07-15
申请号：US09895104
申请日：2001-06-29
申请人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Shankar Venkataraman
发明人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Shankar Venkataraman
IPC分类号： G05D1100
CPC分类号： G05D7/0635 , Y10T137/0363 , Y10T137/2524 , Y10T137/2529 , Y10T137/265
摘要： The invention provides a method and apparatus to control fluids such as process gases into two or more substrate process chambers. In one aspect, the gas flow from a first supply to a first processing region is used to control the gas flow of a second supply to a second processing region where the total gas flow is about equal to the total of the gas flows into both the first and second processing regions. In another aspect, the gas flow rate from the first supply for the first processing region is about equal to the gas flow rate for the second supply to the second processing region.

2. 发明授权

US06709721B2 Purge heater design and process development for the improvement of low k film properties 失效
标题翻译：吹扫加热器设计和工艺开发，用于改善低k膜性能
公开(公告)号：US06709721B2
公开(公告)日：2004-03-23
申请号：US09820586
申请日：2001-03-28
申请人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Ellie Yieh , Shankar Venkataraman
发明人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Ellie Yieh , Shankar Venkataraman
IPC分类号： C23C1640
CPC分类号： C23C16/45521 , C23C16/401 , C23C16/455 , C23C16/4585 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/31633 , Y10T428/31
摘要： The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). A process gas mixture containing at least a carrier gas, an oxidizer, a carbon gas source, or combinations thereof, is supplied adjacent an edge of a substrate though a purge gas inlet in a substrate support to facilitate deposition of low k carbon doped silicon oxide film having a greater concentration of silicon oxide around the edge of the substrate than an inner portion of the substrate.
摘要翻译：本发明提供一种沉积具有低介电常数（k）的碳掺杂氧化硅膜的方法。含有至少载体气体，氧化剂，碳气体源或其组合的工艺气体混合物通过衬底支撑件中的吹扫气体入口邻近衬底的边缘提供，以便于沉积低k碳掺杂氧化硅膜比衬底的内部具有比衬底边缘更高浓度的氧化硅。

3. 发明授权

US06943127B2 CVD plasma assisted lower dielectric constant SICOH film 失效
标题翻译： CVD等离子体辅助低介电常数SICOH膜
公开(公告)号：US06943127B2
公开(公告)日：2005-09-13
申请号：US10302240
申请日：2002-11-22
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： C23C16/30 , H01L21/316 , H01L21/42
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

4. 发明授权

US06902629B2 Method for cleaning a process chamber 失效
公开(公告)号：US06902629B2
公开(公告)日：2005-06-07
申请号：US10122481
申请日：2002-04-12
申请人： Yi Zheng , Vinita Singh , Srinivas D. Nemani , Chen-An Chen , Ju-Hyung Lee , Shankar Venkataraman
发明人： Yi Zheng , Vinita Singh , Srinivas D. Nemani , Chen-An Chen , Ju-Hyung Lee , Shankar Venkataraman
IPC分类号： B08B7/00 , C23C16/44 , B08B5/00
CPC分类号： C23C16/4405 , B08B7/00 , Y10S134/902 , Y10S438/905
摘要： Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.

5. 发明授权

US06379492B2 Corrosion resistant coating 失效
标题翻译：耐腐蚀涂层
公开(公告)号：US06379492B2
公开(公告)日：2002-04-30
申请号：US09428140
申请日：1999-10-26
申请人： Won Bang , Chen-An Chen , Shankar Venkataraman , Ajay Bhatnagar
发明人： Won Bang , Chen-An Chen , Shankar Venkataraman , Ajay Bhatnagar
IPC分类号： C23F102
CPC分类号： C23C14/5806 , C23C14/0694 , C23C16/4404 , H01J37/32477 , H01J37/32559
摘要： A corrosion resistant part comprising a protective coating formed upon a component part. The protective coating comprises magnesium fluoride, which is substantially pure and substantially dense. Preferably, the coating is at least about 99% pure and at least about 85% dense. For example, such a coating can be formed upon the component part at a temperature of at least about 250° C. and a pressure of not more than about 1×10−5 torr. The resulting coating is effective in protecting the surfaces of an aluminum nitride heater against corrosion within a fluorine-containing environment inside a chemical vapor deposition chamber.
摘要翻译：一种耐腐蚀部件，包括形成在部件上的保护涂层。保护性涂层包括氟化镁，其基本上纯且基本上致密。优选地，涂层为至少约99％纯度且至少约85％致密。例如，这样的涂层可以在至少约250℃的温度和不大于约1×10-5乇的压力下在组分部分上形成。所得到的涂层有效地保护氮化铝加热器的表面免受化学气相沉积室内的含氟环境中的腐蚀。

6. 发明授权

US07153787B2 CVD plasma assisted lower dielectric constant SICOH film 有权
标题翻译： CVD等离子体辅助低介电常数SICOH膜
公开(公告)号：US07153787B2
公开(公告)日：2006-12-26
申请号：US11044246
申请日：2005-01-27
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H01L21/469
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

7. 发明申请

US20050153572A1 CVD plasma assisted lower dielectric constant sicoh film 有权
标题翻译： CVD等离子体辅助低介电常数薄膜
公开(公告)号：US20050153572A1
公开(公告)日：2005-07-14
申请号：US11044246
申请日：2005-01-27
申请人： Seon-Mee Cho , Peter Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： C23C16/30 , H01L21/316 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

8. 发明授权

US06486082B1 CVD plasma assisted lower dielectric constant sicoh film 失效
标题翻译： CVD等离子体辅助低介电常数薄膜
公开(公告)号：US06486082B1
公开(公告)日：2002-11-26
申请号：US09885985
申请日：2001-06-18
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H07L21477
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

9. 发明授权

US06387207B1 Integration of remote plasma generator with semiconductor processing chamber 有权
标题翻译：远程等离子体发生器与半导体处理室的集成
公开(公告)号：US06387207B1
公开(公告)日：2002-05-14
申请号：US09561325
申请日：2000-04-28
申请人： Karthik Janakiraman , Kelly Fong , Chen-An Chen , Paul Le , Rong Pan , Shankar Venkataraman
发明人： Karthik Janakiraman , Kelly Fong , Chen-An Chen , Paul Le , Rong Pan , Shankar Venkataraman
IPC分类号： H01L2100
CPC分类号： H01J37/3244 , H01J37/32357 , H01J37/32458
摘要： A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.
摘要翻译：紧凑的独立式远程等离子体发生器安装在半导体处理室的盖上以形成集成的基板处理系统。远程等离子体发生器在清洁操作中被激活以产生清洁等离子体物质，以提供比原位等离子体清洁过程更好的清洁室和降低全氟化碳排放。三通阀是可调节的，以控制气体流向腔室。在清洁操作期间，三通阀将清洁等离子体前体从第一气体管线引导到远程等离子体发生器，以产生清洗等离子体物质，其流入室以清除其中的沉积物。在沉积过程中，三通阀将来自平坦气体管线的第一工艺气体引导到旁路远程等离子体发生器。在进入室之前，第一工艺气体通常与从混合装置中的第二气体管线供应的第二工艺气体混合，以在其上设置的衬底上沉积一层。

10. 发明授权

US07947131B2 Copper deposition chamber having integrated bevel clean with edge bevel removal detection 失效
标题翻译：铜沉积室具有整体斜面清洁和边缘斜面去除检测
公开(公告)号：US07947131B2
公开(公告)日：2011-05-24
申请号：US12783391
申请日：2010-05-19
申请人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
IPC分类号： B08B7/04
CPC分类号： H01L21/6708 , H01L21/67253
摘要： Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.
摘要翻译：本发明的实施例通常提供用于检测和控制半导体衬底的边缘斜面去除的装置和方法。本发明的一个实施例提供一种用于检查旋转基片的装置。该装置包括：衬底支撑件，被配置为在后侧支撑旋转衬底并围绕中心轴线旋转衬底;以及位于衬底支撑件上方的传感器，该传感器被配置为在同时移动的同时检查旋转衬底的前侧径向穿过衬底。

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