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1. 发明申请

US20100279516A1 APPARATUS AND METHOD OF ALIGNING AND POSITIONING A COLD SUBSTRATE ON A HOT SURFACE 有权
标题翻译：在热表面上对准和定位冷基底的装置和方法
公开(公告)号：US20100279516A1
公开(公告)日：2010-11-04
申请号：US12839282
申请日：2010-07-19
申请人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
IPC分类号： H01L21/26
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

2. 发明授权

US07947131B2 Copper deposition chamber having integrated bevel clean with edge bevel removal detection 失效
标题翻译：铜沉积室具有整体斜面清洁和边缘斜面去除检测
公开(公告)号：US07947131B2
公开(公告)日：2011-05-24
申请号：US12783391
申请日：2010-05-19
申请人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
IPC分类号： B08B7/04
CPC分类号： H01L21/6708 , H01L21/67253
摘要： Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.
摘要翻译：本发明的实施例通常提供用于检测和控制半导体衬底的边缘斜面去除的装置和方法。本发明的一个实施例提供一种用于检查旋转基片的装置。该装置包括：衬底支撑件，被配置为在后侧支撑旋转衬底并围绕中心轴线旋转衬底;以及位于衬底支撑件上方的传感器，该传感器被配置为在同时移动的同时检查旋转衬底的前侧径向穿过衬底。

3. 发明申请

US20070209684A1 Copper deposition chamber having integrated bevel clean with edge bevel removal detection 审中-公开
标题翻译：铜沉积室具有整体斜面清洁和边缘斜面去除检测
公开(公告)号：US20070209684A1
公开(公告)日：2007-09-13
申请号：US11369590
申请日：2006-03-07
申请人： Chen-An Chen , Anh Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh Nguyen , Manoocher Birang
IPC分类号： B08B3/02
CPC分类号： H01L21/6708 , H01L21/67253
摘要： Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.
摘要翻译：本发明的实施例通常提供用于检测和控制半导体衬底的边缘斜面去除的装置和方法。本发明的一个实施例提供一种用于检查旋转基片的装置。该装置包括：衬底支撑件，被配置为在后侧支撑旋转衬底并围绕中心轴线旋转衬底;以及位于衬底支撑件上方的传感器，该传感器被配置为在同时移动的同时检查旋转衬底的前侧径向穿过衬底。

4. 发明授权

US07153787B2 CVD plasma assisted lower dielectric constant SICOH film 有权
标题翻译： CVD等离子体辅助低介电常数SICOH膜
公开(公告)号：US07153787B2
公开(公告)日：2006-12-26
申请号：US11044246
申请日：2005-01-27
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H01L21/469
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

5. 发明申请

US20050153572A1 CVD plasma assisted lower dielectric constant sicoh film 有权
标题翻译： CVD等离子体辅助低介电常数薄膜
公开(公告)号：US20050153572A1
公开(公告)日：2005-07-14
申请号：US11044246
申请日：2005-01-27
申请人： Seon-Mee Cho , Peter Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： C23C16/30 , H01L21/316 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

6. 发明授权

US06486082B1 CVD plasma assisted lower dielectric constant sicoh film 失效
标题翻译： CVD等离子体辅助低介电常数薄膜
公开(公告)号：US06486082B1
公开(公告)日：2002-11-26
申请号：US09885985
申请日：2001-06-18
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H07L21477
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

7. 发明授权

US06387207B1 Integration of remote plasma generator with semiconductor processing chamber 有权
标题翻译：远程等离子体发生器与半导体处理室的集成
公开(公告)号：US06387207B1
公开(公告)日：2002-05-14
申请号：US09561325
申请日：2000-04-28
申请人： Karthik Janakiraman , Kelly Fong , Chen-An Chen , Paul Le , Rong Pan , Shankar Venkataraman
发明人： Karthik Janakiraman , Kelly Fong , Chen-An Chen , Paul Le , Rong Pan , Shankar Venkataraman
IPC分类号： H01L2100
CPC分类号： H01J37/3244 , H01J37/32357 , H01J37/32458
摘要： A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.
摘要翻译：紧凑的独立式远程等离子体发生器安装在半导体处理室的盖上以形成集成的基板处理系统。远程等离子体发生器在清洁操作中被激活以产生清洁等离子体物质，以提供比原位等离子体清洁过程更好的清洁室和降低全氟化碳排放。三通阀是可调节的，以控制气体流向腔室。在清洁操作期间，三通阀将清洁等离子体前体从第一气体管线引导到远程等离子体发生器，以产生清洗等离子体物质，其流入室以清除其中的沉积物。在沉积过程中，三通阀将来自平坦气体管线的第一工艺气体引导到旁路远程等离子体发生器。在进入室之前，第一工艺气体通常与从混合装置中的第二气体管线供应的第二工艺气体混合，以在其上设置的衬底上沉积一层。

8. 发明授权

US6068703A Gas mixing apparatus and method 失效
标题翻译：气体混合装置及方法
公开(公告)号：US6068703A
公开(公告)日：2000-05-30
申请号：US893414
申请日：1997-07-11
申请人： Chen-An Chen , Koji Nakanishi , Aihua Chen
发明人： Chen-An Chen , Koji Nakanishi , Aihua Chen
IPC分类号： B01F3/02 , B01F5/06 , C23C16/44 , C23C16/455 , C23C16/511 , H01J37/32 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45512 , B01F5/064 , B01F5/0656 , B01F5/0665 , C23C16/455 , H01J37/3244 , B01F3/02
摘要： The present invention provides apparatus, systems, and methods related to the manufacture of integrated circuits. Specifically, embodiments of the present invention include apparatus designed to provide thorough and reliable fluid mixture for gases used in a semiconductor processing system. In one embodiment of the invention, the gas mixing apparatus comprises a gas mixer housing having a gas inlet, a fluid flow channel, and a gas outlet. The fluid flow channel is fluidly coupled to a plurality of gas sources. The majority of the gas mixture occurs in the fluid flow channel which comprises one or more fluid separators for separating the gas into two or more gas portions and one or more fluid collectors for allowing the gas portions to collide with each other to mix the gas portions. This separation and collection of the gas portions results in a thoroughly mixed gas.
摘要翻译：本发明提供了与集成电路的制造相关的装置，系统和方法。具体地，本发明的实施例包括设计成为半导体处理系统中使用的气体提供彻底且可靠的流体混合物的装置。在本发明的一个实施例中，气体混合装置包括具有气体入口，流体流动通道和气体出口的气体混合器壳体。流体流动通道流体耦合到多个气体源。大部分气体混合物发生在流体流动通道中，流体流动通道包括一个或多个流体分离器，用于将气体分离成两个或更多个气体部分和一个或多个流体收集器，用于允许气体部分相互碰撞以混合气体部分。气体部分的分离和收集导致充分混合的气体。

9. 发明授权

US5948958A Method and apparatus for verifying the calibration of semiconductor processing equipment 失效
标题翻译：用于验证半导体加工设备的校准的方法和装置
公开(公告)号：US5948958A
公开(公告)日：1999-09-07
申请号：US144722
申请日：1998-09-01
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： H01L21/00 , G01F1/00
CPC分类号： H01L21/67253
摘要： A semiconductor processing equipment calibration verification procedure is provided that does not rely on pressure rises from laboratory reference chambers and that is insensitive to in-chamber variations that affect processing gas pressure rise but do not affect the underlying process. A baseline pressure rise ratio is computed based on an inert gas pressure rise and a processing gas pressure rise produced when an inert gas and a processing gas, respectively, are flowed into a processing chamber. Subsequent, preferably periodic, calibration verification procedures are performed and new pressure rise ratios are computed. When a new pressure rise ratio differs from the baseline pressure rise ratio by more than a predetermined amount, the calibration of the semiconductor processing equipment is rejected.
摘要翻译：提供半导体处理设备校准验证程序，其不依赖于来自实验室参考室的压力升高，并且对于影响处理气体压力升高但不影响底层过程的室内变化不敏感。基于惰性气体压力升高和当惰性气体和处理气体分别流入处理室时产生的处理气体压力升高来计算基线压力上升比。执行随后的，优选周期性的校准验证程序，并计算新的压力上升比。当新的压力上升比与基准压力上升比不同的预定量时，半导体处理设备的校准被拒绝。

10. 发明授权

US06793965B2 Clog resistant injection valve 失效
标题翻译：阻塞注射阀
公开(公告)号：US06793965B2
公开(公告)日：2004-09-21
申请号：US09902283
申请日：2001-07-10
申请人： Chen-An Chen , Won Bang
发明人： Chen-An Chen , Won Bang
IPC分类号： C23C1600
CPC分类号： C23C16/4485 , C23C16/4407 , Y10T137/0391 , Y10T137/87676
摘要： An injection valve is provided with vibration to dislodge residue therefrom and to thus avoid injection valve clogging. A wave generator which preferably generates an ultrasonic sine wave, is operatively coupled to the vaporization region of the injection valve (i.e., via the injection block, via a piezoelectric valve controller, etc.). The wave may be applied to the injection valve whenever vaporization takes place, in which case a removable trap is coupled between the injection valve and the processing chamber. Alternatively, the sonic wave may be applied to the injection valve only in conjunction with a chamber cleaning process.
摘要翻译：喷射阀具有振动以从其中排出残留物，从而避免喷射阀堵塞。优选地产生超声正弦波的波发生器可操作地耦合到喷射阀的蒸发区域（即，经由喷射块，经由压电阀控制器等）。每当发生气化时，波浪都可以施加到喷射阀，在这种情况下，可拆卸的捕集器连接在喷射阀和处理室之间。或者，声波可以仅与室清洁过程一起施加到喷射阀。

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