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1. 发明授权

US09068262B2 Tightly fitted ceramic insulator on large area electrode 有权
标题翻译：在大面积电极上紧密配合陶瓷绝缘子
公开(公告)号：US09068262B2
公开(公告)日：2015-06-30
申请号：US13110184
申请日：2011-05-18
申请人： Jozef Kudela , Jonghoon Baek , John M. White , Robin Tiner , Suhail Anwar , Gaku Furuta
发明人： Jozef Kudela , Jonghoon Baek , John M. White , Robin Tiner , Suhail Anwar , Gaku Furuta
IPC分类号： C23C16/455 , C23C16/509 , H01J37/32
CPC分类号： B05B1/185 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32651 , Y10T137/6851
摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.
摘要翻译：本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

2. 发明申请

US20090197015A1 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：US20090197015A1
公开(公告)日：2009-08-06
申请号：US12344210
申请日：2008-12-24
申请人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： C23C16/513
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.
摘要翻译：系统，方法和装置包括用于在基板上沉积膜的等离子体处理室。等离子体处理室包括具有接地板，背板和存在于接地板和背板之间的不均匀性的盖组件。不均匀性可能会干扰RF波均匀性，并导致接地板和背板的部分之间的阻抗不平衡。不均匀性可以包括非均匀表面的结构或减小的间隔。存在不均匀表面的减小的间隔，其中在第一端处的接地板和背板之间的第一距离在第二端处不同于接地板和背板之间的第二距离。该结构可以是2cm至10cm厚，覆盖背板的20％至50％，并且位于远离存在于腔室内的不连续处。

3. 发明授权

US09382621B2 Ground return for plasma processes 有权
标题翻译：等离子体工艺的接地回路
公开(公告)号：US09382621B2
公开(公告)日：2016-07-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

4. 发明申请

US20100288197A1 ANODIZED SHOWERHEAD 有权
标题翻译：阳光淋浴
公开(公告)号：US20100288197A1
公开(公告)日：2010-11-18
申请号：US12779167
申请日：2010-05-13
申请人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
发明人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译：本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。射频是RF处理室遇到的一个常见问题。为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在最靠近室壁的淋浴头。阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

5. 发明授权

US09758869B2 Anodized showerhead 有权
公开(公告)号：US09758869B2
公开(公告)日：2017-09-12
申请号：US12779167
申请日：2010-05-13
申请人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L Tiner , John M White , Shinichi Kurita
发明人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L Tiner , John M White , Shinichi Kurita
IPC分类号： C23C16/00 , H01J37/00 , C23C16/455 , C23C16/44 , C23C16/509 , H01J37/32
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.

6. 发明申请

US20090107955A1 OFFSET LINER FOR CHAMBER EVACUATION 审中-公开
标题翻译：用于室内休闲的偏心衬里
公开(公告)号：US20090107955A1
公开(公告)日：2009-04-30
申请号：US12205414
申请日：2008-09-05
申请人： ROBIN L. TINER , Suhail Anwar , Gaku Furuta , Young Jin Choi , Beom Soo Park , Soo Young Choi , John M. White
发明人： ROBIN L. TINER , Suhail Anwar , Gaku Furuta , Young Jin Choi , Beom Soo Park , Soo Young Choi , John M. White
IPC分类号： B44C1/22 , C23C16/455 , C23C16/44 , C23F1/08
CPC分类号： H01J37/32357 , C23C16/4404 , H01J37/32449 , H01J37/32623 , H01J37/32834
摘要： The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.
摘要翻译：本发明通常包括与室壁间隔开的腔室衬套，以便当从处理腔室排出气体时允许处理气体在腔室衬套和室壁之间被拉动。当真空泵在基座下方时，处理气体将被拉到基座下方，并可能导致不希望的沉积到处理室部件上。此外，处理气体将被拉过狭缝阀开口并可能沉积在狭缝阀开口内。当材料沉积在狭缝阀开口中时，会发生剥落并污染基板。通过沿着具有狭缝阀开口的侧壁以外的侧壁吸收处理气体，可以减少狭缝阀开口上的不期望的沉积。

7. 发明申请

US20110146577A1 SHOWERHEAD WITH INSULATED CORNER REGIONS 审中-公开
标题翻译：具有绝缘角区域的淋浴
公开(公告)号：US20110146577A1
公开(公告)日：2011-06-23
申请号：US12975708
申请日：2010-12-22
申请人： SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
发明人： SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
IPC分类号： C23C16/455 , C23C16/458 , C23C16/50 , B05B1/14
CPC分类号： C23C16/4585 , C23C16/45565 , C23C16/5096 , H01J37/32174 , H01J37/32449 , H01J37/32541 , H01J37/3255
摘要： Embodiments of the present invention generally relate to a gas distribution showerhead having insulated corner regions to reduce arcing and improve deposition uniformity control. In one embodiment, the gas distribution showerhead is formed of a conductive material with material from the corner regions removed. Corner members formed substantially in the shape of the removed portion of corner regions are attached to the conductive showerhead. The corner members may be made of a material having electrical insulating properties, such as a ceramic or insulating polymer.
摘要翻译：本发明的实施方案一般涉及具有绝缘拐角区域以减少电弧放电并改善沉积均匀性控制的气体分配喷头。在一个实施例中，气体分配喷头由导电材料形成，其中去除了角部区域的材料。基本上形成角部区域的去除部分形状的角部件被附接到导电花洒。角部件可以由具有电绝缘性的材料制成，例如陶瓷或绝缘聚合物。

8. 发明申请

US20100196626A1 GROUND RETURN FOR PLASMA PROCESSES 有权
标题翻译：等离子体工艺的接地返回
公开(公告)号：US20100196626A1
公开(公告)日：2010-08-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

9. 外观设计

USD713200S1 Susceptor with heater 有权
公开(公告)号：USD713200S1
公开(公告)日：2014-09-16
申请号：US29430967
申请日：2012-08-31
申请人： Gaku Furuta , John M. White , Robin L. Tiner , Suhail Anwar , Soo Young Choi
设计人： Gaku Furuta , John M. White , Robin L. Tiner , Suhail Anwar , Soo Young Choi

10. 外观设计

USD680946S1 Gas flow diffuser faceplate 有权
标题翻译：气流扩散面板
公开(公告)号：USD680946S1
公开(公告)日：2013-04-30
申请号：US29353504
申请日：2010-01-09
申请人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
设计人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner

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