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1. 发明授权

US09691650B2 Substrate transfer robot with chamber and substrate monitoring capability 有权
公开(公告)号：US09691650B2
公开(公告)日：2017-06-27
申请号：US12890281
申请日：2010-09-24
申请人： Shinichi Kurita , Takayuki Matsumoto , Suhail Anwar , Makoto Inagawa
发明人： Shinichi Kurita , Takayuki Matsumoto , Suhail Anwar , Makoto Inagawa
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67742 , H01L21/67259
摘要： A method and apparatus for a transfer robot that having at least one image sensor disposed thereon is provided. The transfer robot includes a lift assembly having a first drive assembly for moving a first platform relative to a second platform in a first linear direction, an end effector assembly disposed on the second platform and movable in a second linear direction by a second drive assembly, the second linear direction being orthogonal to the first linear direction, at least one image sensor, and a lighting device associated with the at least one image sensor.

2. 发明授权

US09324597B2 Vertical inline CVD system 有权
标题翻译：垂直在线CVD系统
公开(公告)号：US09324597B2
公开(公告)日：2016-04-26
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01J37/32 , H01L21/67 , C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

3. 发明授权

US08961756B2 Ganged scanning of multiple magnetrons, especially two level folded magnetrons 有权
标题翻译：组合扫描多个磁控管，特别是两个级别的磁控管
公开(公告)号：US08961756B2
公开(公告)日：2015-02-24
申请号：US11780757
申请日：2007-07-20
申请人： Makoto Inagawa , Hien Minh Huu Le , Akihiro Hosokawa , Bradley O. Stimson , John M. White
发明人： Makoto Inagawa , Hien Minh Huu Le , Akihiro Hosokawa , Bradley O. Stimson , John M. White
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.
摘要翻译：磁控管组件包括一个或多个磁控管，每个磁控管在靶的溅射面上形成封闭的等离子体环。目标可以包括多个条带目标，相应的带状磁控管在其上滚动并且通过弹簧机构部分地支撑在公共支撑板上。带状磁控管可以是两级折叠磁控管，其中每个磁控管形成在条带靶的侧面之间延伸的折叠等离子体环，并且其端部在目标的中间相遇。形成磁控管的磁体可以布置成具有通过弯曲部分连接的具有大致均匀的直线部分的图案，其中在角附近提供额外的磁体位置以引导等离子体轨道。多个可能是柔性的磁控管可以弹性地支撑在扫描的支撑板上，并且单独部分地由一个或多个靶的背面上的辊支撑。

4. 发明申请

US20120175250A1 Target Cooling Through Gun Drilled Holes 审中-公开
标题翻译：目标通过枪钻孔冷却
公开(公告)号：US20120175250A1
公开(公告)日：2012-07-12
申请号：US13420996
申请日：2012-03-15
申请人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
发明人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
IPC分类号： C23C14/34 , B23P11/00
CPC分类号： C23C14/3407 , H01J37/3408 , H01J37/3497 , Y10T29/49826
摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.
摘要翻译：特别适用于具有密封于主处理室的目标组件和容纳移动磁控管的真空抽吸室的大型面板等离子体溅射反应器的溅射靶组件。目标瓦片被粘合到的目标组件包括具有平行于主面钻出的平行冷却孔的整体板。孔的端部可以是密封的，并且垂直延伸的槽在每侧上布置成两个交错的组，并且被成对地加工成在背板的相对侧上的相应的一对冷却孔。四个歧管管被密封到四组槽，并提供反向流动的冷却剂路径。

5. 发明申请

US20120031335A1 VERTICAL INLINE CVD SYSTEM 有权
标题翻译：立式CVD系统
公开(公告)号：US20120031335A1
公开(公告)日：2012-02-09
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： C23C16/511 , C23C16/458 , C23C16/455
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

6. 发明授权

US07834994B2 Sensors for dynamically detecting substrate breakage and misalignment of a moving substrate 有权
标题翻译：用于动态检测基板破损和移动基板未对准的传感器
公开(公告)号：US07834994B2
公开(公告)日：2010-11-16
申请号：US12255629
申请日：2008-10-21
申请人： William A. Bagley , Paohuei Lee , Kyung-Tae Kim , Sam-Kyung Kim , Toshio Kiyotake , Sam Kim , Takayuki Matsumoto , Jonathan Erik Larson , Makoto Inagawa , James Hoffman , Billy C. Leung
发明人： William A. Bagley , Paohuei Lee , Kyung-Tae Kim , Sam-Kyung Kim , Toshio Kiyotake , Sam Kim , Takayuki Matsumoto , Jonathan Erik Larson , Makoto Inagawa , James Hoffman , Billy C. Leung
IPC分类号： G01N21/00
CPC分类号： H01L21/67265 , G01N21/9501
摘要： An apparatus and method incorporating at least two sensors that detect the presence of a substrate is provided. In one embodiment, a method for transferring a substrate in a processing system is described. The method includes positioning a substrate on an end effector in a first chamber, moving the substrate through an opening between the first chamber and a second chamber along a substrate travel path, and sensing opposing sides of the substrate travel path using at least two sensors positioned proximate to the opening, each of the at least two sensors defining a beam path that is directed through opposing edge regions of the substrate when at least a portion of an edge region traverses the beam path.
摘要翻译：提供了一种结合至少两个检测基板存在的传感器的装置和方法。在一个实施例中，描述了用于在处理系统中传送衬底的方法。该方法包括将基板定位在第一室中的末端执行器上，沿着基板行进路径使基板移动通过第一室和第二室之间的开口，并使用至少两个传感器来检测基板行进路径的相对侧至少两个传感器中的每一个限定了当边缘区域的至少一部分穿过光束路径时被引导通过衬底的相对边缘区域的光束路径。

7. 发明申请

US20100011785A1 TUBE DIFFUSER FOR LOAD LOCK CHAMBER 审中-公开
标题翻译：用于负载锁箱的管子扩散器
公开(公告)号：US20100011785A1
公开(公告)日：2010-01-21
申请号：US12501799
申请日：2009-07-13
申请人： Mehran Behdjat , Shinichi Kurita , Makoto Inagawa
发明人： Mehran Behdjat , Shinichi Kurita , Makoto Inagawa
IPC分类号： C23C16/00
CPC分类号： C23C16/54 , H01L21/67109 , H01L21/67201
摘要： Embodiments disclosed herein generally provide a load lock chamber capable of controlling the temperature of the substrate therein. The load lock chamber may have one or more cooling fluid introduction passages that extend across the chamber. Cooling fluid, such as nitrogen gas, may flow through the cooling fluid passage and enter the load lock chamber. The cooling fluid passages may have openings to permit the cooling fluid to exit the passages and enter the load lock chamber. The openings may be arranged to permit a greater amount of cooling fluid to enter the load lock at locations corresponding to the substrate positions that are in contact with an end effector that places the substrate into the load lock chamber. Additionally, the openings may be arranged to permit a greater amount if cooling fluid to enter the load lock chamber in the center of the chamber as compared to the edge of the chamber.
摘要翻译：本文公开的实施例通常提供能够控制其中的基板的温度的负载锁定室。加载锁定室可以具有延伸穿过该腔室的一个或多个冷却流体引入通道。诸如氮气的冷却流体可以流过冷却流体通道并进入负载锁定室。冷却流体通道可以具有允许冷却流体离开通道并进入负载锁定室的开口。开口可以被布置成允许更大量的冷却流体在对应于与将基板放置到负载锁定室中的端部执行器接触的基板位置的位置处进入负载锁定。此外，与腔室的边缘相比，如果冷却流体进入腔室中心的负载锁定室，则开口可以被布置为允许更大的量。

8. 发明授权

US07429718B2 Heating and cooling of substrate support 有权
标题翻译：加热和冷却衬底支架
公开(公告)号：US07429718B2
公开(公告)日：2008-09-30
申请号：US11213348
申请日：2005-08-24
申请人： Makoto Inagawa , Akihiro Hosokawa
发明人： Makoto Inagawa , Akihiro Hosokawa
IPC分类号： H05B3/68 , C23C16/00
CPC分类号： H01L21/67109
摘要： A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, a cooling plate positioned below the thermally conductive body, a base support structure comprising a stainless steel material, positioned below the cooling plate and adapted to structurally support the thermally conductive body, and one or more cooling channels adapted to be supported by the base support structure and positioned between the cooling plate and the base support structure. A process chamber comprising the substrate support assembly of the invention is also provided.
摘要翻译：提供了用于控制处理室内的衬底的温度的衬底支撑组件和方法。衬底支撑组件包括导热体，其包括不锈钢材料，在导热体表面上的衬底支撑表面，并且适于在其上支撑大面积衬底，一个或多个嵌入导热体内的加热元件，位于所述导热体下方的冷却板，包括位于所述冷却板下方并适于结构地支撑所述导热体的不锈钢材料的基座支撑结构，以及适于由所述基座支撑结构支撑的一个或多个冷却通道，以及位于冷却板和基座支撑结构之间。还提供了包括本发明的基板支撑组件的处理室。

9. 发明申请

US20080011601A1 COOLED ANODES 审中-公开
标题翻译：冷却阳极
公开(公告)号：US20080011601A1
公开(公告)日：2008-01-17
申请号：US11771366
申请日：2007-06-29
申请人： ALLEN KA-LING LAU , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
发明人： ALLEN KA-LING LAU , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/32724 , H01J37/34 , H01J37/3438 , H01J37/3455
摘要： A physical vapor deposition (PVD) apparatus and a PVD method are disclosed. Extending an anode across the processing space between the target and the substrate may increase deposition uniformity on a substrate. The anode provides a path to ground for electrons that are excited in the plasma and may uniformly distribute the electrons within the plasma across the processing space rather than collect at the chamber walls. The uniform distribution of the electrons within the plasma may create a uniform deposition of material on the substrate. The anodes may be cooled with a cooling fluid to control the temperature of the anodes and reduce flaking. The anodes may be disposed across the process space perpendicular to the long side of a magnetron that may scan in two dimensions across the back of the sputtering target. The scanning magnetron may reduce localized heating of the anode.
摘要翻译：公开了物理气相沉积（PVD）装置和PVD方法。将阳极延伸穿过靶和衬底之间的处理空间可增加衬底上的沉积均匀性。阳极为在等离子体中被激发的电子提供到地面的路径，并且可以将等离子体内的电子均匀地分布在处理空间中，而不是在室壁处收集。电子在等离子体内的均匀分布可能会在衬底上产生均匀的材料沉积。阳极可以用冷却流体冷却以控制阳极的温度并减少剥落。阳极可以跨过垂直于磁控管的长边的处理空间，其可以跨过溅射靶的背面的二维扫描。扫描磁控管可以减少阳极的局部加热。

10. 发明授权

US10265868B2 Transfer robot with substrate cooling 有权
公开(公告)号：US10265868B2
公开(公告)日：2019-04-23
申请号：US13006865
申请日：2011-01-14
申请人： Shinichi Kurita , Makoto Inagawa , Takayuki Matsumoto
发明人： Shinichi Kurita , Makoto Inagawa , Takayuki Matsumoto
IPC分类号： H01L21/67 , B25J19/00 , B65G49/06 , C03B35/20 , H01L21/677
摘要： Embodiments of the present invention provide a transfer robot having a cooling plate attached thereto for cooling a substrate during transfer between a processing chamber and a load lock chamber. In one embodiment, the cooling plate is a single, large area cooling plate attached to the transfer robot beneath the substrate being transferred. In another embodiment, the cooling plate is an array of substrates attached to the transfer robot beneath the substrate being transferred. The cooling plate may include a conduit path for circulating a cooling fluid throughout the cooling plate. The cooling plate may have an upper surface with a high emissivity coating applied thereto.

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