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1. 发明授权

US06375748B1 Method and apparatus for preventing edge deposition 有权
标题翻译：防止边缘沉积的方法和装置
公开(公告)号：US06375748B1
公开(公告)日：2002-04-23
申请号：US09387928
申请日：1999-09-01
申请人： Joseph Yudovsky , Tom Madar , Salvador Umotoy , Son Ngoc Trinh , Lawrence C. Lei , Anzhong (Andrew) Chang , Xiaoxiong (John) Yuan
发明人： Joseph Yudovsky , Tom Madar , Salvador Umotoy , Son Ngoc Trinh , Lawrence C. Lei , Anzhong (Andrew) Chang , Xiaoxiong (John) Yuan
IPC分类号： C23C1600
CPC分类号： H01L21/68735 , H01L21/68785
摘要： A substrate support having a removable edge ring, which is made of a material having a lower coefficient of thermal expansion (CTE), than that of the substrate support is provided. The edge ring and the substrate support are configured for pin and slot coupling. Specifically, either the edge ring, or the substrate support comprises a plurality of pins, and the other of the edge ring or the substrate support comprises a plurality of hollow regions or slots in which the pins may be inserted. The slots are at least as wide as a corresponding one of the plurality of pins and extend in the direction in which the substrate support expands and contracts during thermal cycling. Each of the slots extends a length which is sufficient to compensate for the difference between the CTE of the substrate support and the CTE of the edge ring, over the range of process temperatures to which the apparatus is exposed. Preferably the susceptor is made of aluminum, and the edge ring is made of ceramic. A restrictor gap may be defined between a surface of the substrate support and a surface of the purge ring so as to restrict a volume of purge gas flowing to an edge of a substrate positioned on the substrate support. The purge gas delivery channel may have an exposed outlet and may be upwardly angled to facilitate cleaning.
摘要翻译：提供了一种具有可移除的边缘环的衬底支撑件，其由具有比衬底支撑件的热膨胀系数（CTE）低的材料制成。边缘环和基板支撑件配置为销和槽联接。具体来说，边缘环或衬底支撑件包括多个销，并且边缘环或衬底支撑件中的另一个包括可以插入销的多个中空区域或狭槽。所述槽至少与所述多个销中相应的销一样宽，并且在所述基板支撑件在热循环期间膨胀和收缩的方向上延伸。每个狭槽的长度足以补偿基板支撑件的CTE与边缘环的CTE之间的差异，在该设备暴露于该处理温度的范围内。优选地，基座由铝制成，并且边缘环由陶瓷制成。限定器间隙可以限定在衬底支撑件的表面和净化环的表面之间，以便限制流过位于衬底支撑件上的衬底的边缘的吹扫气体的体积。净化气体输送通道可以具有暴露的出口并且可以向上成角度以便于清洁。

2. 发明授权

US08291857B2 Apparatuses and methods for atomic layer deposition 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US08291857B2
公开(公告)日：2012-10-23
申请号：US12494901
申请日：2009-06-30
申请人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/452 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

3. 发明申请

US20090095621A1 SUPPORT ASSEMBLY 审中-公开
标题翻译：支持大会
公开(公告)号：US20090095621A1
公开(公告)日：2009-04-16
申请号：US12257093
申请日：2008-10-23
申请人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
发明人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
IPC分类号： C25F7/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和装置。在一个方面，该装置包括支撑组件。在一个实施例中，支撑组件包括联接到盘形主体的轴。轴具有真空导管，传热流体导管和形成在其中的气体导管。盘状体包括上表面，下表面和圆柱形外表面。热电偶嵌入盘状体。凸缘从圆柱形外表面径向向外延伸，其中盘形体的下表面包括凸缘的一侧。液体通道形成在靠近凸缘和下表面的盘形体中。流体通道联接到轴的传热流体导管。在盘状体的上表面上形成有多个槽，并且通过盘状体中的孔与轴的真空管道连接。气体导管通过盘状体形成并将轴的气体导管连接到盘形体的圆柱形外表面。盘状体中的气体导管具有与盘状体的中心线大致垂直的取向。

4. 发明申请

US20050205110A1 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US20050205110A1
公开(公告)日：2005-09-22
申请号：US11137609
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
IPC分类号： H01L21/28 , C23C16/455 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/8238 , H01L23/12 , H01L23/52 , C25F1/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在至少一个实施例中，该方法包括将基板表面支撑在真空室中，并从室内的气体混合物产生反应物质。然后将衬底表面在腔室内冷却，并且反应物质被引导到冷却的衬底表面以与其上的天然氧化物反应并在衬底表面上形成膜。然后将衬底表面在室内加热以使膜蒸发。

5. 发明授权

US10593539B2 Support assembly 有权
公开(公告)号：US10593539B2
公开(公告)日：2020-03-17
申请号：US13457421
申请日：2012-04-26
申请人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
发明人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
IPC分类号： B23K10/00 , H01L21/02 , H01J37/32 , H01L21/67 , C23C14/54 , C23C14/50 , C23C14/02
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

6. 发明申请

US20130008984A1 APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20130008984A1
公开(公告)日：2013-01-10
申请号：US13618741
申请日：2012-09-14
申请人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。室盖组件还包括布置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

7. 发明申请

US20100003406A1 APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20100003406A1
公开(公告)日：2010-01-07
申请号：US12494901
申请日：2009-06-30
申请人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/34
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

8. 发明授权

US07520957B2 Lid assembly for front end of line fabrication 有权
标题翻译：用于前端线制造的盖组件
公开(公告)号：US07520957B2
公开(公告)日：2009-04-21
申请号：US11137199
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.
摘要翻译：提供了一种用于半导体处理的盖组件。在至少一个实施例中，盖组件包括第一电极，其包括具有逐渐增加的内径的扩张部分。盖组件还包括与第一电极相对设置的第二电极。在第一电极的扩展部分的内径和第二电极的第一表面之间限定等离子体腔。

9. 发明授权

US07396480B2 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US07396480B2
公开(公告)日：2008-07-08
申请号：US11137609
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在至少一个实施例中，该方法包括将基板表面支撑在真空室中，并从室内的气体混合物产生反应物质。然后将衬底表面在腔室内冷却，并且反应物质被引导到冷却的衬底表面以与其上的天然氧化物反应并在衬底表面上形成膜。然后将衬底表面在室内加热以使膜蒸发。

10. 发明申请

US20050218507A1 Lid assembly for front end of line fabrication 有权
标题翻译：用于前端线制造的盖组件
公开(公告)号：US20050218507A1
公开(公告)日：2005-10-06
申请号：US11137199
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
IPC分类号： H01L21/28 , C23C16/455 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/8238 , H01L23/12 , H01L23/52
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.
摘要翻译：提供了一种用于半导体处理的盖组件。在至少一个实施例中，盖组件包括第一电极，其包括具有逐渐增加的内径的扩张部分。盖组件还包括与第一电极相对设置的第二电极。在第一电极的扩展部分的内径和第二电极的第一表面之间限定等离子体腔。

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