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1. 发明申请

US20090111280A1 METHOD FOR REMOVING OXIDES 审中-公开
标题翻译：去除氧化物的方法
公开(公告)号：US20090111280A1
公开(公告)日：2009-04-30
申请号：US12328466
申请日：2008-12-04
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/31
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，从处理室内的气体混合物产生反应物质的等离子体，将衬底暴露于反应性物质，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，将衬底加热到至少约75℃的温度以蒸发挥发性膜并去除氧化物层，并且在加热衬底之后在衬底上沉积第一层。

2. 发明申请

US20080268645A1 METHOD FOR FRONT END OF LINE FABRICATION 有权
标题翻译：前线制造方法
公开(公告)号：US20080268645A1
公开(公告)日：2008-10-30
申请号：US12134715
申请日：2008-06-06
申请人： CHIEN-TEH KAO , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： CHIEN-TEH KAO , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/311
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.
摘要翻译：在一个实施例中，提供了从衬底表面去除天然氧化物的方法，其包括在处理室内支撑含有氧化硅的衬底，从处理室内的气体混合物产生反应物质的等离子体，将衬底冷却至第一在处理室内温度小于约65℃，并且将反应性物质引导到冷却的基底以与其上的氧化硅反应，同时在基底上形成膜。该膜通常含有六氟硅酸铵。该方法进一步提供将衬底定位在紧邻气体分配板的位置，并将衬底加热至处理室内约100℃或更高的第二温度以升华或去除膜。气体混合物可以含有氨，三氟化氮和载气。

3. 发明授权

US08846163B2 Method for removing oxides 有权
标题翻译：去除氧化物的方法
公开(公告)号：US08846163B2
公开(公告)日：2014-09-30
申请号：US13489137
申请日：2012-06-05
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： B05D3/06 , H05B3/00 , C23C16/00 , H01J37/32 , H01L21/67 , H01L21/02
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，将衬底暴露于气体混合物，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，加热衬底达到至少约75℃的温度以使挥发性膜升华并去除氧化物层，并且在加热基材之后在基板上沉积第一层。

4. 发明申请

US20110223755A1 METHOD FOR REMOVING OXIDES 审中-公开
标题翻译：去除氧化物的方法
公开(公告)号：US20110223755A1
公开(公告)日：2011-09-15
申请号：US13112875
申请日：2011-05-20
申请人： CHIEN-TEH KAO , Jing-Pei(Connie) Chou , Chiukin(Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： CHIEN-TEH KAO , Jing-Pei(Connie) Chou , Chiukin(Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/28
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，从处理室内的气体混合物产生反应物质的等离子体，将衬底暴露于反应性物质，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，将衬底加热到至少约75℃的温度以蒸发挥发性膜并去除氧化物层，并且在加热衬底之后在衬底上沉积第一层。

5. 发明授权

US07767024B2 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US07767024B2
公开(公告)日：2010-08-03
申请号：US12134715
申请日：2008-06-06
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/302
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.
摘要翻译：在一个实施例中，提供了从衬底表面去除天然氧化物的方法，其包括在处理室内支撑含有氧化硅的衬底，从处理室内的气体混合物产生反应物质的等离子体，将衬底冷却至第一在处理室内温度小于约65℃，并且将反应性物质引导到冷却的基底以与其上的氧化硅反应，同时在基底上形成膜。该膜通常含有六氟硅酸铵。该方法进一步提供将衬底定位在紧邻气体分配板的位置，并将衬底加热至处理室内约100℃或更高的第二温度以升华或去除膜。气体混合物可以含有氨，三氟化氮和载气。

6. 发明授权

US07520957B2 Lid assembly for front end of line fabrication 有权
标题翻译：用于前端线制造的盖组件
公开(公告)号：US07520957B2
公开(公告)日：2009-04-21
申请号：US11137199
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.
摘要翻译：提供了一种用于半导体处理的盖组件。在至少一个实施例中，盖组件包括第一电极，其包括具有逐渐增加的内径的扩张部分。盖组件还包括与第一电极相对设置的第二电极。在第一电极的扩展部分的内径和第二电极的第一表面之间限定等离子体腔。

7. 发明授权

US07396480B2 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US07396480B2
公开(公告)日：2008-07-08
申请号：US11137609
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在至少一个实施例中，该方法包括将基板表面支撑在真空室中，并从室内的气体混合物产生反应物质。然后将衬底表面在腔室内冷却，并且反应物质被引导到冷却的衬底表面以与其上的天然氧化物反应并在衬底表面上形成膜。然后将衬底表面在室内加热以使膜蒸发。

8. 发明申请

US20090095621A1 SUPPORT ASSEMBLY 审中-公开
标题翻译：支持大会
公开(公告)号：US20090095621A1
公开(公告)日：2009-04-16
申请号：US12257093
申请日：2008-10-23
申请人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
发明人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
IPC分类号： C25F7/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和装置。在一个方面，该装置包括支撑组件。在一个实施例中，支撑组件包括联接到盘形主体的轴。轴具有真空导管，传热流体导管和形成在其中的气体导管。盘状体包括上表面，下表面和圆柱形外表面。热电偶嵌入盘状体。凸缘从圆柱形外表面径向向外延伸，其中盘形体的下表面包括凸缘的一侧。液体通道形成在靠近凸缘和下表面的盘形体中。流体通道联接到轴的传热流体导管。在盘状体的上表面上形成有多个槽，并且通过盘状体中的孔与轴的真空管道连接。气体导管通过盘状体形成并将轴的气体导管连接到盘形体的圆柱形外表面。盘状体中的气体导管具有与盘状体的中心线大致垂直的取向。

9. 发明授权

US10593539B2 Support assembly 有权
公开(公告)号：US10593539B2
公开(公告)日：2020-03-17
申请号：US13457421
申请日：2012-04-26
申请人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
发明人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
IPC分类号： B23K10/00 , H01L21/02 , H01J37/32 , H01L21/67 , C23C14/54 , C23C14/50 , C23C14/02
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

10. 发明申请

US20120267346A1 SUPPORT ASSEMBLY 审中-公开
标题翻译：支持大会
公开(公告)号：US20120267346A1
公开(公告)日：2012-10-25
申请号：US13457421
申请日：2012-04-26
申请人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
发明人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
IPC分类号： B23K10/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和装置。在一个方面，该装置包括支撑组件。在一个实施例中，支撑组件包括联接到盘形主体的轴。盘状体包括上表面，下表面和圆柱形外表面。凸缘从圆柱形外表面径向向外延伸。流体通道形成在盘形体中并且连接到轴的传热流体导管。形成在上表面中的多个槽通过孔耦合到轴的真空管道。通过盘状体形成的气体导管将轴的气体导管与盘形体的圆柱形外表面相连接。

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