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1. 发明申请

US20080038857A1 Method of manufacturing nitride-based semiconductor light-emitting device 失效
标题翻译：制造氮化物系半导体发光元件的方法
公开(公告)号：US20080038857A1
公开(公告)日：2008-02-14
申请号：US11802482
申请日：2007-05-23
申请人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
发明人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
IPC分类号： H01L21/311
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02472 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01S5/0213 , H01S5/0217
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.
摘要翻译：提供了一种制造具有提高的效率和增加的输出特性的氮化物基半导体发光器件的方法。该方法可以包括在衬底上形成具有湿蚀刻性质的牺牲层，在牺牲层上形成保护层，在用于晶体生长的反应气体气氛中保护牺牲层，并且促进要形成的半导体层的外延生长在保护层上，在保护层上形成包括n型半导体层，有源层和p型半导体层的半导体器件，并且通过湿式蚀刻牺牲层从半导体器件去除衬底。

2. 发明授权

US07989244B2 Method of manufacturing nitride-based semiconductor light-emitting device 失效
标题翻译：制造氮化物系半导体发光元件的方法
公开(公告)号：US07989244B2
公开(公告)日：2011-08-02
申请号：US11802482
申请日：2007-05-23
申请人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
发明人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02472 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01S5/0213 , H01S5/0217
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.
摘要翻译：提供了一种制造具有提高的效率和增加的输出特性的氮化物基半导体发光器件的方法。该方法可以包括在衬底上形成具有湿蚀刻性质的牺牲层，在牺牲层上形成保护层，在用于晶体生长的反应气体气氛中保护牺牲层，并且促进要形成的半导体层的外延生长在保护层上，在保护层上形成包括n型半导体层，有源层和p型半导体层的半导体器件，并且通过湿式蚀刻牺牲层从半导体器件去除衬底。

3. 发明申请

US20080093617A1 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法
公开(公告)号：US20080093617A1
公开(公告)日：2008-04-24
申请号：US11808172
申请日：2007-06-07
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L21/283 , H01L23/48
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
摘要翻译：提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

4. 发明授权

US07737456B2 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法
公开(公告)号：US07737456B2
公开(公告)日：2010-06-15
申请号：US11808172
申请日：2007-06-07
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
摘要翻译：提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

5. 发明授权

US07736924B2 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
公开(公告)号：US07736924B2
公开(公告)日：2010-06-15
申请号：US12458136
申请日：2009-07-01
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

6. 发明授权

US07781246B2 Method of manufacturing vertical light emitting device 有权
标题翻译：制造垂直发光装置的方法
公开(公告)号：US07781246B2
公开(公告)日：2010-08-24
申请号：US11882259
申请日：2007-07-31
申请人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
发明人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/44
摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.
摘要翻译：提供一种垂直发光装置的制造方法。制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型电极，并且切割金属支撑层以将发光层划分为发光器件单元。

7. 发明申请

US20080113462A1 Method of manufacturing vertical light emitting device 有权
标题翻译：制造垂直发光装置的方法
公开(公告)号：US20080113462A1
公开(公告)日：2008-05-15
申请号：US11882259
申请日：2007-07-31
申请人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
发明人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
IPC分类号： H01L21/02
CPC分类号： H01L33/0079 , H01L33/44
摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.
摘要翻译：提供一种垂直发光装置的制造方法。制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型电极，并且切割金属支撑层以将发光层划分为发光器件单元。

8. 发明申请

US20100279448A1 Method of manufacturing vertical light emitting device 有权
公开(公告)号：US20100279448A1
公开(公告)日：2010-11-04
申请号：US12805132
申请日：2010-07-14
申请人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
发明人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
IPC分类号： H01L21/78
CPC分类号： H01L33/0079 , H01L33/44
摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

9. 发明授权

US07888153B2 Method of manufacturing vertical light emitting device 有权
标题翻译：制造垂直发光装置的方法
公开(公告)号：US07888153B2
公开(公告)日：2011-02-15
申请号：US12805132
申请日：2010-07-14
申请人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
发明人： Hyun-soo Kim , Kyoung-kook Kim , Hyung-kun Kim , Kwang-ki Choi , Jeong-wook Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/44
摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.
摘要翻译：提供一种垂直发光装置的制造方法。制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型电极，并且切割金属支撑层以将发光层划分为发光器件单元。

10. 发明申请

US20110198652A1 LOW RESISTANCE ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME 失效
标题翻译：低电阻电极和化合物半导体发光器件，包括它们
公开(公告)号：US20110198652A1
公开(公告)日：2011-08-18
申请号：US13095487
申请日：2011-04-27
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L33/60 , B82Y99/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

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