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    • 3. 发明申请
    • SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20160268287A1
    • 2016-09-15
    • US15047882
    • 2016-02-19
    • Jong-Hyun PARKJee-Yong KIMDae-Seok BYEON
    • Jong-Hyun PARKJee-Yong KIMDae-Seok BYEON
    • H01L27/115H01L29/792
    • H01L27/11575H01L27/11565H01L27/1157H01L27/11582
    • A semiconductor device includes a substrate including cell and dummy regions, first channel structures on the cell region and extending in a first direction vertical with respect to the substrate, gate lines surrounding outer sidewalls of the first channel structures and extending in a second direction parallel to the substrate, the gate lines being spaced apart from each other along the first direction, cutting lines between the gate lines on the cell region and extending in the second direction, dummy patterns spaced apart from each other along the first direction on the dummy region, the dummy patterns having a stepped shape along a third direction parallel to the top surface of the substrate and perpendicular to the second direction, at least a portion of the dummy patterns including a same conductive material as that in the gate lines, and dummy lines through the dummy patterns.
    • 一种半导体器件包括:包括单元和虚设区域的基板,单元区域上的第一通道结构,并且相对于基板垂直于第一方向延伸;栅极线,其围绕第一通道结构的外侧壁延伸,并且沿第二方向平行延伸 所述基板,所述栅极线沿着所述第一方向彼此间隔开,在所述单元区域上的所述栅极线之间切割并沿所述第二方向延伸,在所述虚拟区域上沿着所述第一方向彼此间隔开的虚拟图案, 所述虚拟图案沿着与所述基板的顶面平行且垂直于所述第二方向的第三方向具有台阶状,所述虚设图案的至少一部分包括与所述栅极线相同的导电性材料, 虚拟模式。
    • 5. 发明申请
    • THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    • 薄膜晶体管及其制造方法
    • US20110084276A1
    • 2011-04-14
    • US12753732
    • 2010-04-02
    • Jin-Hee KANGChun-Gi YOUSun PARKJong-Hyun PARKYul-Kyu LEE
    • Jin-Hee KANGChun-Gi YOUSun PARKJong-Hyun PARKYul-Kyu LEE
    • H01L29/786H01L21/336
    • H01L29/78609H01L29/78618
    • A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.
    • 公开了一种薄膜晶体管(TFT)及其制造方法。 TFT包括衬底,设置在衬底上的栅电极,设置在栅电极上的栅极绝缘层,设置在栅极绝缘层上方并包括多晶硅(poly-Si)层的半导体层,设置的欧姆接触层 超过半导体层的预定区域,设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层,以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此,当控制底栅型TFT的截止电流时,可以通过简单的处理来防止由漏电流引起的特性的劣化。
    • 7. 发明申请
    • METHOD FOR PROVIDING RADIO FREQUENCY IDENTIFICATION APPLICATION INTERFACE AND SYSTEM THEREOF
    • 提供无线电频率识别应用接口及其系统的方法
    • US20090140843A1
    • 2009-06-04
    • US12256147
    • 2008-10-22
    • Hyo Chan BANGJee Sook EUNSe Won OHJae Heum LEEJong-Hyun PARKHyung-Jin AHNKwang-Hoon KIM
    • Hyo Chan BANGJee Sook EUNSe Won OHJae Heum LEEJong-Hyun PARKHyung-Jin AHNKwang-Hoon KIM
    • H04Q5/22
    • G06F9/545G06F9/541
    • The present invention relates to an RFID application interface method and a system thereof. In the present invention, an RFID middleware system changes a control request input from a user or an RFID application system according to a communication protocol of an RFID device to be controlled, and sends it to the RFID device. Also, when the user or the RFID application system inputs a data process policy that is common to various RFID devices of a logical RFID device group, the RFID middleware system generates data process rules that are suitable for communication capability and data processing capability of each RFID device based on the data process policy and provides an interface that allows processing of data by a corresponding RFID device. In addition, the RFID middle system defines a procedural flow of at least one of services and at least one of tasks that constitute an RFID business process and provides an interface to support interconnection and cooperation of services that are included in the RFID business process.
    • 本发明涉及一种RFID应用接口方法及其系统。 在本发明中,RFID中间件系统根据要控制的RFID装置的通信协议改变来自用户或RFID应用系统的控制请求,并将其发送给RFID装置。 此外,当用户或RFID应用系统输入逻辑RFID设备组的各种RFID设备共有的数据处理策略时,RFID中间件系统生成适合于每个RFID的通信能力和数据处理能力的数据处理规则 基于数据处理策略的设备,并提供允许由相应RFID设备处理数据的接口。 另外,RFID中间系统定义了至少一个服务的程序流程,以及构成RFID业务流程的任务中的至少一个,并且提供了支持RFID业务流程中包括的服务的互连和协作的接口。