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    • 2. 发明申请
    • APPARATUS AND METHOD FOR MANAGING USER MEMORY OF RFID TAG
    • 用于管理RFID标签的用户存储器的装置和方法
    • US20090153308A1
    • 2009-06-18
    • US12190944
    • 2008-08-13
    • Joo Sang PARKYong Joon LEEJong-Hyun PARK
    • Joo Sang PARKYong Joon LEEJong-Hyun PARK
    • G06F12/02H04B7/00
    • G06F12/023G06Q20/3278G06Q20/341G06Q20/3576G07F7/1008
    • The present invention relates to a device and method for managing a memory of an RFID tag. The present invention provides an apparatus for managing a user memory of an RFID tag. The apparatus includes a memory usage information storing unit, a memory registration-management unit, and a memory referring unit. The memory usage information storing unit stores memory usage information. The memory registration-management unit searches information regarding an empty region of the user memory by the memory usage information storing unit, provides the searched information to the specific application system, receives memory usage information regarding the specific data that is to be stored in the user memory from the specific application system, and stores and manages the memory usage information regarding the specific data in the memory usage information storing unit, if the specific application system requests the user memory to store specific data. The memory referring unit provides memory usage information regarding the specific data, which is stored in the memory usage information storing unit, to the application system that requests to refer to the specific data if referring to the specific data is requested. According to the present invention, it is possible to systematically and efficiently manage data that is stored in the user memory region of the RFID tag by a plurality of users, and to prevent the storage positions of a plurality of data that are stored in the user memory region of the RFID tag from overlapping. As a result, it is possible to prevent a loss of data to be stored in the user memory region of the RFID tag.
    • 本发明涉及一种用于管理RFID标签的存储器的装置和方法。 本发明提供一种用于管理RFID标签的用户存储器的装置。 该装置包括存储器使用信息存储单元,存储器登记管理单元和存储器参考单元。 存储器使用信息存储单元存储存储器使用信息。 存储器注册管理单元通过存储器使用信息存储单元来搜索关于用户存储器的空白区域的信息,将搜索到的信息提供给特定应用系统,接收关于要存储在用户中的特定数据的存储器使用信息 存储器,并且存储和管理存储器使用信息存储单元中关于特定数据的存储器使用信息,如果特定应用系统请求用户存储器存储特定数据。 存储器引用单元提供存储在存储器使用信息存储单元中的特定数据的存储器使用信息,如果请求参考特定数据,则请求参考特定数据的应用系统。 根据本发明,可以通过多个用户系统地且有效地管理存储在RFID标签的用户存储区域中的数据,并且防止存储在用户中的多个数据的存储位置 RFID标签的存储区域重叠。 结果,可以防止数据的丢失被存储在RFID标签的用户存储区域中。
    • 4. 发明申请
    • APPARATUS FOR PROCESSING INTEGRATED QUERY FROM VARIOUS SENSOR NETWORKS AND METHOD THEREOF
    • 用于从各种传感器网络处理集成查询的装置及其方法
    • US20080109421A1
    • 2008-05-08
    • US11933037
    • 2007-10-31
    • Jae-Jun YOOJun-Wook LEEMin-Soo KIMIn-Sung JANGMal-Hee KIMYong-Joon LEEJong-Hyun PARK
    • Jae-Jun YOOJun-Wook LEEMin-Soo KIMIn-Sung JANGMal-Hee KIMYong-Joon LEEJong-Hyun PARK
    • G06F17/30
    • G06F17/30551
    • An apparatus for processing an integrated query from various sensor networks and a method thereof are provided. The apparatus includes an integrated query parser for parsing an integrated query and analyzing a syntax of the parsed integrated query; an integrated query execution plan generator for analyzing meaning of the parsed integrated query and generating an integrated query execution query for processing an integrated query; an integrated query optimizer for optimizing a process time for the generated execution plan based on query information stored in the query information storage and sensor network information stored in the sensor network information storage; and an integrated query executer for detailing the integrated query execution plan by controlling an execution order according to the optimized integrated query and transferring the detailed integrated query execution plan to an event data process executer, a temporal data process executer, and a continuous data process executer.
    • 提供了一种用于处理来自各种传感器网络的综合查询的装置及其方法。 该装置包括用于解析集成查询并分析解析的综合查询的语法的集成查询解析器; 集成查询执行计划生成器,用于分析解析的集成查询的含义并生成用于处理集成查询的集成查询执行查询; 集成查询优化器,用于基于存储在所述传感器网络信息存储器中的查询信息存储器和传感器网络信息中的查询信息来优化所生成的执行计划的处理时间; 以及集成查询执行器,用于通过根据优化的集成查询控制执行顺序来详细描述集成查询执行计划,并将详细的集成查询执行计划传送到事件数据处理执行器,时间数据处理执行器和连续数据处理执行器 。
    • 8. 发明申请
    • SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20160268287A1
    • 2016-09-15
    • US15047882
    • 2016-02-19
    • Jong-Hyun PARKJee-Yong KIMDae-Seok BYEON
    • Jong-Hyun PARKJee-Yong KIMDae-Seok BYEON
    • H01L27/115H01L29/792
    • H01L27/11575H01L27/11565H01L27/1157H01L27/11582
    • A semiconductor device includes a substrate including cell and dummy regions, first channel structures on the cell region and extending in a first direction vertical with respect to the substrate, gate lines surrounding outer sidewalls of the first channel structures and extending in a second direction parallel to the substrate, the gate lines being spaced apart from each other along the first direction, cutting lines between the gate lines on the cell region and extending in the second direction, dummy patterns spaced apart from each other along the first direction on the dummy region, the dummy patterns having a stepped shape along a third direction parallel to the top surface of the substrate and perpendicular to the second direction, at least a portion of the dummy patterns including a same conductive material as that in the gate lines, and dummy lines through the dummy patterns.
    • 一种半导体器件包括:包括单元和虚设区域的基板,单元区域上的第一通道结构,并且相对于基板垂直于第一方向延伸;栅极线,其围绕第一通道结构的外侧壁延伸,并且沿第二方向平行延伸 所述基板,所述栅极线沿着所述第一方向彼此间隔开,在所述单元区域上的所述栅极线之间切割并沿所述第二方向延伸,在所述虚拟区域上沿着所述第一方向彼此间隔开的虚拟图案, 所述虚拟图案沿着与所述基板的顶面平行且垂直于所述第二方向的第三方向具有台阶状,所述虚设图案的至少一部分包括与所述栅极线相同的导电性材料, 虚拟模式。
    • 10. 发明申请
    • THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    • 薄膜晶体管及其制造方法
    • US20110084276A1
    • 2011-04-14
    • US12753732
    • 2010-04-02
    • Jin-Hee KANGChun-Gi YOUSun PARKJong-Hyun PARKYul-Kyu LEE
    • Jin-Hee KANGChun-Gi YOUSun PARKJong-Hyun PARKYul-Kyu LEE
    • H01L29/786H01L21/336
    • H01L29/78609H01L29/78618
    • A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.
    • 公开了一种薄膜晶体管(TFT)及其制造方法。 TFT包括衬底,设置在衬底上的栅电极,设置在栅电极上的栅极绝缘层,设置在栅极绝缘层上方并包括多晶硅(poly-Si)层的半导体层,设置的欧姆接触层 超过半导体层的预定区域,设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层,以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此,当控制底栅型TFT的截止电流时,可以通过简单的处理来防止由漏电流引起的特性的劣化。