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    • 1. 发明申请
    • THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    • 薄膜晶体管及其制造方法
    • US20110084276A1
    • 2011-04-14
    • US12753732
    • 2010-04-02
    • Jin-Hee KANGChun-Gi YOUSun PARKJong-Hyun PARKYul-Kyu LEE
    • Jin-Hee KANGChun-Gi YOUSun PARKJong-Hyun PARKYul-Kyu LEE
    • H01L29/786H01L21/336
    • H01L29/78609H01L29/78618
    • A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.
    • 公开了一种薄膜晶体管(TFT)及其制造方法。 TFT包括衬底,设置在衬底上的栅电极,设置在栅电极上的栅极绝缘层,设置在栅极绝缘层上方并包括多晶硅(poly-Si)层的半导体层,设置的欧姆接触层 超过半导体层的预定区域,设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层,以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此,当控制底栅型TFT的截止电流时,可以通过简单的处理来防止由漏电流引起的特性的劣化。
    • 4. 发明申请
    • METHOD FOR MANUFACTURING AN ORGANIC LIGHT EMITTING DIODE DISPLAY
    • 用于制造有机发光二极管显示器的方法
    • US20130217165A1
    • 2013-08-22
    • US13860339
    • 2013-04-10
    • Yul-Kyu LEESun PARKChun-Gi YOUJong-Hyun PARK
    • Yul-Kyu LEESun PARKChun-Gi YOUJong-Hyun PARK
    • H01L51/56
    • H01L51/56H01L27/3258H01L27/3262H01L27/3265
    • Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate in the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.
    • 制造OLED显示器包括在基板上形成覆盖第一存储板的第一存储板和栅极绝缘层; 顺序地形成覆盖第一存储板的第二存储板和在栅极绝缘层中间的电容器; 通过向第一存储板中未被电容器中间体覆盖的部分注入杂质而形成第一掺杂区; 形成具有使所述电容器中间露出的电容器开口的层间绝缘层,以及在所述电容器开口中的朝向所述第一掺杂区域的电容器的边缘上的多个防蚀蚀层; 去除包括侵蚀防止层的电容器中间件和侵蚀防止层的下部区域,以及通过第二存储板在第一存储板中注入杂质以形成与第一掺杂区域接触的第二掺杂区域。