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1. 发明授权

US6069587A Multiband millimeterwave reconfigurable antenna using RF mem switches 失效
标题翻译：使用RF mem开关的多频带毫米波可重构天线
公开(公告)号：US6069587A
公开(公告)日：2000-05-30
申请号：US79805
申请日：1998-05-15
申请人： Jonathan Lynch , Stan Livingston , Jar J. Lee , Robert Y. Loo , Juan Lam , Adele Schmitz , Debabani Choudhury , Julia Brown , Daniel J. Hyman , Brett Warneke
发明人： Jonathan Lynch , Stan Livingston , Jar J. Lee , Robert Y. Loo , Juan Lam , Adele Schmitz , Debabani Choudhury , Julia Brown , Daniel J. Hyman , Brett Warneke
IPC分类号： H01Q1/38 , H01Q5/00 , H01Q9/04
CPC分类号： H01Q9/14 , H01Q1/38 , H01Q9/0407 , H01H2001/0084 , H01H59/0009
摘要： A multiband millimeterwave antenna system for communicating signals in multiple frequency bands is disclosed. A main antenna body is connected to antenna extensions by micro-electro-mechanical switches. By opening and closing the switches, the length of the antenna can be altered. The antenna is coupled to a microstrip feed line by an aperture. A series of matching stubs match the impedance of the feed line for the various signal frequencies.
摘要翻译：公开了一种用于在多个频带中传送信号的多频带毫米波天线系统。主天线体通过微机电开关连接到天线延伸。通过打开和关闭开关，天线的长度可以改变。天线通过孔耦合到微带馈电线。一系列匹配的短截线匹配各种信号频率的馈线的阻抗。

2. 发明授权

US6046659A Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications 失效
标题翻译：用于微波和毫米波应用的宽带表面微加工微机电开关的设计和制造
公开(公告)号：US6046659A
公开(公告)日：2000-04-04
申请号：US080326
申请日：1998-05-15
申请人： Robert Y. Loo , Adele Schmitz , Julia Brown , Jonathan Lynch , Debabani Choudhury , James Foschaar , Daniel J. Hyman , Brett Warneke , Juan Lam , Tsung-Yuan Hsu , Jae Lee , Mehran Mehregany
发明人： Robert Y. Loo , Adele Schmitz , Julia Brown , Jonathan Lynch , Debabani Choudhury , James Foschaar , Daniel J. Hyman , Brett Warneke , Juan Lam , Tsung-Yuan Hsu , Jae Lee , Mehran Mehregany
IPC分类号： H01H1/50 , H01H59/00 , H01P1/12 , H01P1/10 , H01H57/00
CPC分类号： B81B3/0072 , H01G5/18 , H01G5/38 , H01G5/40 , H01H59/0009 , H01P1/12 , B81B2201/014 , B81B2203/0118 , H01H1/50
摘要： Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.
摘要翻译：公开了微机电开关的设计和制造方法。提出了三种不同的开关制造技术的两种不同的开关设计，共有六种开关结构。每个开关具有多层电枢，其具有悬置的偏置电极和固定到电枢的结构层的导电传输线。导电凹坑连接到导线，为开关提供可靠的接触区域。该开关使用氮化硅作为电枢结构层和二氧化硅作为在制造期间支撑电枢的牺牲层制造。氢氟酸用于在临界点干燥器中进行后处理以去除二氧化硅层以提高产率。

3. 发明授权

US6043727A Reconfigurable millimeterwave filter using stubs and stub extensions selectively coupled using voltage actuated micro-electro-mechanical switches 失效
标题翻译：可重新配置的毫米波滤波器使用电压致动的微机电开关选择性地耦合的短截线和短截线
公开(公告)号：US6043727A
公开(公告)日：2000-03-28
申请号：US79804
申请日：1998-05-15
申请人： Brett Warneke , Juan Lam , Adele Schmitz , Julia Brown , Darren Atkinson , Daniel J. Hyman , Robert Y. Loo
发明人： Brett Warneke , Juan Lam , Adele Schmitz , Julia Brown , Darren Atkinson , Daniel J. Hyman , Robert Y. Loo
IPC分类号： H01P1/203 , H01P7/00
CPC分类号： H01P1/2039 , H01G5/18 , H01G5/40
摘要： A reconfigurable filter system designed using micro-elecro-mechanical (MEM) switches is disclosed. The filter comprises a transmission line with one or more filter stubs coupled to the transmission line by MEM switches. The impedance of the filter system is altered by selectively opening and closing the MEM switches, which alters the filter characteristics of the filter system. Alternatively, the characteristics of the filter system are altered by using the MEM switches to selectively alter the length of filter stubs attached to the transmission line.
摘要翻译：公开了一种使用微电机（MEM）开关设计的可重构滤波器系统。滤波器包括传输线，其中一个或多个滤波器短截线通过MEM开关耦合到传输线。通过选择性地打开和关闭MEM开关来改变过滤系统的阻抗，这改变了过滤器系统的过滤特性。或者，通过使用MEM开关来选择性地改变附接到传输线的滤波器短线的长度来改变滤波器系统的特性。

4. 发明授权

US06331257B1 Fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications 有权
标题翻译：用于微波和毫米波应用的宽带表面微加工微机电开关的制造
公开(公告)号：US06331257B1
公开(公告)日：2001-12-18
申请号：US09452052
申请日：1999-11-30
申请人： Robert Y. Loo , Adele Schmitz , Julia Brown , James Foschaar , Daniel J. Hyman , Tsung-Yuan Hsu
发明人： Robert Y. Loo , Adele Schmitz , Julia Brown , James Foschaar , Daniel J. Hyman , Tsung-Yuan Hsu
IPC分类号： H01B1300
CPC分类号： B81B3/0072 , B81B2201/014 , B81B2203/0118 , H01G5/18 , H01G5/38 , H01G5/40 , H01H1/50 , H01H59/0009 , H01P1/12
摘要： Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.
摘要翻译：公开了微机电开关的设计和制造方法。提出了三种不同的开关制造技术的两种不同的开关设计，共有六种开关结构。每个开关具有多层电枢，其具有悬置的偏置电极和固定到电枢的结构层的导电传输线。导电凹坑连接到导线，为开关提供可靠的接触区域。该开关使用氮化硅作为电枢结构层和二氧化硅作为在制造期间支撑电枢的牺牲层制造。氢氟酸用于在临界点干燥器中进行后处理以去除二氧化硅层以提高产率。

5. 发明授权

US06396368B1 CMOS-compatible MEM switches and method of making 失效
标题翻译： CMOS兼容MEM开关及制作方法
公开(公告)号：US06396368B1
公开(公告)日：2002-05-28
申请号：US09438085
申请日：1999-11-10
申请人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
发明人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
IPC分类号： H01P110
CPC分类号： B81C1/00246 , B81B2201/014 , B81C2201/014 , B81C2203/0714 , B81C2203/0735 , H01H1/58 , H01H59/0009 , H01H2001/0057
摘要： A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.
摘要翻译：通过使用标准制造多个金属层集成电路（如CMOS）的处理步骤，廉价地制造了微机电（MEM）开关。可以将精确的步骤调整为与特定代工厂的过程兼容，从而导致低成本且易于与其他电路集成的装置。处理步骤包括通过通常用作通孔的金属插头进行MEM开关的接触，以连接由电介质层分离的金属层。这种接触通孔形成在牺牲金属化区域的任一侧，然后从接触通孔之间移除互连金属化，使它们分离。围绕触点的介质被回蚀，使得它们彼此突出。因此，当通过致动MEM开关使触点彼此移动时，它们牢固地连接而不阻塞。钨通常用于在CMOS工艺中形成通孔，并且它制成优良的接触材料，但也可以使用其它通孔金属作为接触。互连金属化可以用于MEM开关的其他结构和互连需求，并且优选地是用于所使用的铸造和工艺的标准。可以使用各种金属和介电材料来制造开关，但是在优选实施例中，互连金属层是铝，并且介电材料是SiO 2，与标准四层CMOS制造工艺完全兼容的材料。

6. 发明授权

US06667245B2 CMOS-compatible MEM switches and method of making 失效
公开(公告)号：US06667245B2
公开(公告)日：2003-12-23
申请号：US10016894
申请日：2001-12-13
申请人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
发明人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
IPC分类号： H01L2100
CPC分类号： B81C1/00246 , B81B2201/014 , B81C2201/014 , B81C2203/0714 , B81C2203/0735 , H01H1/58 , H01H59/0009 , H01H2001/0057
摘要： A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

7. 发明申请

US20050264372A1 Integrated MMIC modules for millimeter and submillimeter wave system applications 有权
标题翻译：用于毫米波和亚毫米波系统应用的集成MMIC模块
公开(公告)号：US20050264372A1
公开(公告)日：2005-12-01
申请号：US10856106
申请日：2004-05-28
申请人： Debabani Choudhury , Adele Schmitz
发明人： Debabani Choudhury , Adele Schmitz
IPC分类号： H01L23/66 , H01P5/107
CPC分类号： H01L23/66 , H01L2223/6677 , H01L2924/0002 , H01L2924/3011 , H01P5/107 , Y10T29/49016 , Y10T29/4913 , Y10T29/49155 , Y10T29/49789 , H01L2924/00
摘要： An integrated circuit module comprising integrated coupling transmission structures protruding from the main body of the integrated circuit with extra substrate material removed around and/or under the coupling transmission structures.
摘要翻译：一种集成电路模块，包括从集成电路的主体突出的集成耦合传输结构，并且在耦合传输结构周围和/或下方移除额外的基板材料。

8. 发明授权

US06842097B2 Torsion spring for electro-mechanical switches and a cantilever-type RF micro-electromechanical switch incorporating the torsion spring 失效
公开(公告)号：US06842097B2
公开(公告)日：2005-01-11
申请号：US10844273
申请日：2004-05-11
申请人： Tsung-Yuan Hsu , Robert Loo , Adele Schmitz
发明人： Tsung-Yuan Hsu , Robert Loo , Adele Schmitz
IPC分类号： H01H1/06 , H01H1/20 , H01H59/00 , H01P1/12 , H04L12/56 , H01H51/22
CPC分类号： H01H59/0009 , H01G5/18 , H01G5/40 , H01H1/06 , H01H1/20 , H01P1/127
摘要： A torsion spring for an electro-mechanical switch is presented. The torsion spring comprises a set of tines including at least one tine extending from the free end of the armature of a switch. A terminus portion is rotatably suspended between the tines, and includes a conducting transmission line, at least a portion of which is exposed for electrical contact. The conducting transmission line has a length selected such that the exposed portion of the transmission line forms a circuit between the input and output of the micro-electro-mechanical switch when the micro-electro-mechanical switch is urged into a closed position, with the terminus portion rotating via the tines to form a conformal connection between the exposed portion of the conducting transmission line and the input and output of the switch, thus optimizing the electrical flow therebetween. The switch is also applied to MEMS devices.

9. 发明授权

US5646069A Fabrication process for Al.sub.x In.sub.1-x As/Ga.sub.y In.sub.1-y As power HFET ohmic contacts 失效
标题翻译： AlxIn1-xAs / GayIn1-yAs功率HFET欧姆接触的制造工艺
公开(公告)号：US5646069A
公开(公告)日：1997-07-08
申请号：US472165
申请日：1995-06-07
申请人： Linda Jelloian , Mehran Matloubian , Loi D. Nguyen , Adele Schmitz
发明人： Linda Jelloian , Mehran Matloubian , Loi D. Nguyen , Adele Schmitz
IPC分类号： H01L21/285 , H01L21/335 , H01L29/45 , H01L29/778 , H01L21/283
CPC分类号： H01L29/66462 , H01L21/28575 , H01L29/452 , H01L29/7785
摘要： A metal system that can be adjusted to obtain higher alloying temperatures in AlInAs/GaInAs heterostuctures is disclosed. Increasing the thickness of a Ag layer in the metal system facilitates higher alloying temperatures and, consequently, improved ohmic contact reliability. The system is particularly directed to use in Al.sub.x In.sub.1-x As/Ga.sub.0.47 In.sub.0.53 As with 0.48
摘要翻译：公开了可以调节以在AlInAs / GaInAs异构结构中获得更高合金化温度的金属系统。增加金属系统中Ag层的厚度有助于更高的合金化温度，从而提高欧姆接触可靠性。该系统特别涉及在具有0.48

10. 发明申请

US20060181379A1 Stress bimorph MEMS switches and methods of making same 审中-公开
公开(公告)号：US20060181379A1
公开(公告)日：2006-08-17
申请号：US11399077
申请日：2006-04-05
申请人： Robert Schwartz , Ming Wu , Tsung-Yuan Hsu , Adele Schmitz , Robert Loo , James Schaffner , Gregory Tangonan
发明人： Robert Schwartz , Ming Wu , Tsung-Yuan Hsu , Adele Schmitz , Robert Loo , James Schaffner , Gregory Tangonan
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01G5/18 , H01G5/40 , H01H1/20 , H01H2059/0018 , H01H2059/0072 , H01H2059/0081
摘要： A micro-electromechanical system (MEMS) switch formed on a substrate, the switch comprising a transmission line formed on the substrate, a substrate electrostatic plate formed on the substrate, and an actuating portion. The actuating portion comprises a cantilever anchor formed on the substrate and a cantilevered actuator arm extending from the cantilever anchor. Attraction of the actuator arm toward the substrate brings an electrical contact into engagement with the portions of the transmission line separated by a gap, thus bridging the transmission line gap and closing the circuit. In order to maximize electrical isolation between the transmission line and the electrical contact in an OFF-state while maintaining a low actuation voltage, the actuator arm is bent such that the minimum separation distance between the transmission line and the electrical contact is equal to or greater than the maximum separation distance between the substrate electrostatic plate and arm electrostatic plate.

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