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1. 发明授权

US06193836B1 Center gas feed apparatus for a high density plasma reactor 失效
标题翻译：用于高密度等离子体反应器的中心供气装置
公开(公告)号：US06193836B1
公开(公告)日：2001-02-27
申请号：US09480313
申请日：2000-01-10
申请人： Jon Mohn , Mei Chang , Raymond Hung , Kenneth S. Collins , Ru-Liang Lee
发明人： Jon Mohn , Mei Chang , Raymond Hung , Kenneth S. Collins , Ru-Liang Lee
IPC分类号： H05H100
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/32467 , Y10S156/914
摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.
摘要翻译：本发明通过用于加工工件的等离子体反应器来实现，该等离子体反应器包括限定处理室的反应器壳体，半导体天花板窗，用于在其处理期间支撑工件的室内的基座，半导体天花板包括用于进入的气体入口系统通过天花板进入腔室的等离子体前体气体，以及用于将等离子体源功率耦合到腔室中的装置。

2. 发明授权

US5762714A Plasma guard for chamber equipped with electrostatic chuck 失效
标题翻译：等离子卫生室配有静电卡盘
公开(公告)号：US5762714A
公开(公告)日：1998-06-09
申请号：US324848
申请日：1994-10-18
申请人： Jon Mohn , Joshua Chiu-Wing Tsui , Kenneth S. Collins
发明人： Jon Mohn , Joshua Chiu-Wing Tsui , Kenneth S. Collins
IPC分类号： B23Q3/15 , C23C14/50 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/683 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32559
摘要： A plasma guard member that has the configuration of a flat concentric ring is used in a vacuum process chamber equipped with a plasma reaction chamber, a plasma source and a lower chamber which houses an electrostatic chuck for preventing charged particles from drifting or diffusing to the lower chamber and contact the electrostatic chuck such that the substrate holding capability of the chuck is not adversely affected.
摘要翻译：在具有等离子体反应室，等离子体源和下室的真空处理室中使用具有扁平同心圆的构造的等离子体保护构件，所述等离子体源和下室容纳用于防止带电粒子漂移或扩散到下部的静电卡盘并且与静电吸盘接触，使得卡盘的基板保持能力不受不利影响。

3. 发明授权

US06440866B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06440866B1
公开(公告)日：2002-08-27
申请号：US09595750
申请日：2000-06-16
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L2100
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

4. 发明授权

US06218312B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06218312B1
公开(公告)日：2001-04-17
申请号：US08987509
申请日：1998-10-08
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

5. 发明授权

US6036877A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6036877A
公开(公告)日：2000-03-14
申请号：US648256
申请日：1996-05-13
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , C23C16/517 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32871 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

6. 发明授权

US5990017A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US5990017A
公开(公告)日：1999-11-23
申请号：US104550
申请日：1998-06-25
申请人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

7. 发明授权

US6024826A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6024826A
公开(公告)日：2000-02-15
申请号：US734797
申请日：1996-10-23
申请人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , C23F1/02 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

8. 发明授权

US5437757A Clamp ring for domed pedestal in wafer processing chamber 失效
标题翻译：晶圆处理室中圆顶基座的夹环
公开(公告)号：US5437757A
公开(公告)日：1995-08-01
申请号：US184125
申请日：1994-01-21
申请人： Michael Rice , Jon Mohn
发明人： Michael Rice , Jon Mohn
IPC分类号： B25B27/14 , C23C14/50 , H01L21/203 , H01L21/302 , H01L21/3065 , H01L21/683 , H01L21/687 , C23F1/02
CPC分类号： H01L21/68721
摘要： A clamp ring for use in a thermal reactor for processing a semiconductor wafer. The reactor includes a domed pedestal for supporting the wafer and controlling its temperature, and a clamp ring which includes an annular seat formed therein, for receiving and holding down the periphery of the wafer onto the domed pedestal. The seat formed in the clamp ring supports a ring of spheres which, in operation, engage and hold down the periphery of the wafer. Each sphere is rotationally supported in a pocket formed in the body of the clamp ring. A portion of each sphere protrudes beyond the seat so that the wafer's surface is contacted by the convex surface of the sphere. This keeps the wafer's surface and any sharp edges on the seat apart, thereby reducing damage of the wafer's surface by the seat. As the spheres are able to rotate in the pockets and therefore roll on the surface of the wafer, the chances of the damaging the wafer's surface are further reduced.
摘要翻译：一种用于加热半导体晶片的热反应器中的夹紧环。反应器包括用于支撑晶片并控制其温度的圆顶基座，以及包括形成在其中的环形座的夹环，用于将晶片的周边接收并保持在圆顶基座上。形成在夹紧环中的座部支撑一个球环，其在操作中接合和压紧晶片的周边。每个球体被旋转地支撑在形成在夹紧环的主体中的凹穴中。每个球体的一部分突出超过座椅，使得晶片的表面与球体的凸面接触。这保持了晶片的表面和座椅上的任何锋利的边缘分开，从而减少了座椅对晶片表面的损坏。由于球体能够在凹穴中旋转并因此在晶片的表面上滚动，因此进一步减小了损坏晶片表面的机会。

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