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1. 发明授权

US06179925B2 Method and apparatus for improved control of process and purge material in substrate processing system 失效
标题翻译：用于改善衬底处理系统中工艺和吹扫材料控制的方法和装置
公开(公告)号：US06179925B2
公开(公告)日：2001-01-30
申请号：US09311449
申请日：1999-05-14
申请人： John Schmitt , Bo Zheng , Mei Chang , Stephen Voss
发明人： John Schmitt , Bo Zheng , Mei Chang , Stephen Voss
IPC分类号： C23C1600
CPC分类号： C23C16/45561 , C23C16/4481 , C23C16/52
摘要： A method and apparatus for control of precursor and purge additive materials in a deposition system comprising a precursor material delivery system and a plurality of purge additive transfer lines connected between or at components in the precursor material delivery system. One of the plurality of purge additive transfer lines is connected between an ampoule and a liquid mass flow controller, another is connected between the liquid mass flow controller and a vaporizer and a third is connected to the vaporizer. The apparatus further comprises a process chamber connected to the precursor material delivery system and having a susceptor wherein one of the plurality of purge additive transfer lines is connected to the susceptor. With the apparatus and accompanying method, formation of particulate contaminants is greatly reduced. The purge additive provided at strategic locations within the deposition system provides a stabilizing effect to any precursor that remains in the transfer lines and helps to control the CVD reaction at the exclusion zone.
摘要翻译：一种用于在沉积系统中控制前体和吹扫添加剂材料的方法和装置，包括前体材料输送系统和连接在前体材料输送系统中的组分之间或其中的多个清除添加剂输送管线。多个清洗添加剂输送管线之一连接在安瓿和液体质量流量控制器之间，另一个连接在液体质量流量控制器和蒸发器之间，第三个连接到蒸发器。该设备还包括连接到前体材料输送系统并具有基座的处理室，其中多个清除添加剂输送管线中的一个连接到基座。利用该装置和伴随方法，大大降低了颗粒污染物的形成。提供在沉积系统内的战略位置处的清洗添加剂对保留在传输管线中的任何前体提供了稳定作用，并有助于控制排除区域的CVD反应。

2. 发明授权

US08747686B2 Methods of end point detection for substrate fabrication processes 失效
标题翻译：基板制造工艺的终点检测方法
公开(公告)号：US08747686B2
公开(公告)日：2014-06-10
申请号：US13360633
申请日：2012-01-27
申请人： Bo Zheng , Mei Chang , Arvind Sundarrajan
发明人： Bo Zheng , Mei Chang , Arvind Sundarrajan
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： C23C14/54 , C23C14/564 , C23C16/4401 , C23C16/4404 , C23C16/52
摘要： Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.
摘要翻译：提供了用于分析过程终点的方法和底物处理系统。检测和监测该方法的副产物以确定基材处理室内各种类型的反应过程的完成。这些方法提供了实时过程监控，从而减少了刚性限制其他衬底处理参数，提高室清洁效率和/或增加衬底处理生产量的需要。

3. 发明授权

US08642473B2 Methods for contact clean 有权
标题翻译：接触清洁方法
公开(公告)号：US08642473B2
公开(公告)日：2014-02-04
申请号：US13411398
申请日：2012-03-02
申请人： Mei Chang , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali K. Narasimhan
发明人： Mei Chang , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali K. Narasimhan
IPC分类号： H01L21/311
CPC分类号： H01L21/02063 , H01L21/76802 , H01L21/76814 , H01L21/76829
摘要： Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.
摘要翻译：提供了从表面除去氧化物的方法和装置，所述表面包括硅和锗中的至少一种。所述方法和装置特别适用于从接触结构的金属硅化物层去除天然氧化物。该方法和装置有利地将蚀刻停止层蚀刻工艺和自然氧化物去除工艺集成在单个室中，从而在衬底转移过程期间消除自然氧化物生长或其它污染物再沉积。此外，该方法和装置还提供了改进的三步化学反应过程，以有效地从金属硅化物层去除天然氧化物，而不会不利地改变接触结构的几何形状和形成在接触结构中的沟槽或通孔的临界尺寸。

4. 发明授权

US06355106B1 Deposition of copper with increased adhesion 有权
标题翻译：沉积铜增加附着力
公开(公告)号：US06355106B1
公开(公告)日：2002-03-12
申请号：US09706321
申请日：2000-11-03
申请人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
发明人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
IPC分类号： C23C1600
CPC分类号： C23C16/0281 , C23C16/18
摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.
摘要翻译：一种用于改善铜层与晶片上的下层的粘合性的方法和装置。铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。

5. 发明授权

US06171661B2 Deposition of copper with increased adhesion 失效
标题翻译：沉积铜增加附着力
公开(公告)号：US06171661B2
公开(公告)日：2001-01-09
申请号：US09030555
申请日：1998-02-25
申请人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
发明人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
IPC分类号： B05D306
CPC分类号： C23C16/0281 , C23C16/18
摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.
摘要翻译：一种用于改善铜层与晶片上的下层的粘合性的方法和装置。铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。

6. 发明申请

US20120225558A1 METHODS FOR CONTACT CLEAN 有权
标题翻译：联系清洁方法
公开(公告)号：US20120225558A1
公开(公告)日：2012-09-06
申请号：US13411398
申请日：2012-03-02
申请人： MEI CHANG , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali Narasimhan
发明人： MEI CHANG , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali Narasimhan
IPC分类号： H01L21/311 , H01L21/3105
CPC分类号： H01L21/02063 , H01L21/76802 , H01L21/76814 , H01L21/76829
摘要： Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.
摘要翻译：提供了从表面除去氧化物的方法和装置，所述表面包括硅和锗中的至少一种。所述方法和装置特别适用于从接触结构的金属硅化物层去除天然氧化物。该方法和装置有利地将蚀刻停止层蚀刻工艺和自然氧化物去除工艺集成在单个室中，从而在衬底转移过程期间消除自然氧化物生长或其它污染物再沉积。此外，该方法和设备还提供了改进的三步化学反应过程，以有效地从金属硅化物层去除天然氧化物，而不会不利地改变接触结构的几何形状和形成在接触结构中的沟槽或通孔的临界尺寸。

7. 发明申请

US20130193108A1 METHODS OF END POINT DETECTION FOR SUBSTRATE FABRICATION PROCESSES 失效
标题翻译：基板制造工艺的端点检测方法
公开(公告)号：US20130193108A1
公开(公告)日：2013-08-01
申请号：US13360633
申请日：2012-01-27
申请人： Bo Zheng , Mei Chang , Arvind Sundarrajan
发明人： Bo Zheng , Mei Chang , Arvind Sundarrajan
IPC分类号： B44C1/22 , B08B7/00 , B08B7/04 , C23C16/52 , B05C5/00
CPC分类号： C23C14/54 , C23C14/564 , C23C16/4401 , C23C16/4404 , C23C16/52
摘要： Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.
摘要翻译：提供了用于分析过程终点的方法和底物处理系统。检测和监测该方法的副产物以确定基材处理室内各种类型的反应过程的完成。这些方法提供了实时过程监控，从而减少了刚性限制其他衬底处理参数，提高室清洁效率和/或增加衬底处理生产量的需要。

8. 发明授权

US06319728B1 Method for treating a deposited film for resistivity reduction 失效
标题翻译：用于处理沉积膜以降低电阻率的方法
公开(公告)号：US06319728B1
公开(公告)日：2001-11-20
申请号：US09092477
申请日：1998-06-05
申请人： Mohan K. Bhan , Ling Chen , Bo Zheng , Justin Jones , Seshadri Ganguli , Timothy Levine , Samuel Wilson , Mei Chang
发明人： Mohan K. Bhan , Ling Chen , Bo Zheng , Justin Jones , Seshadri Ganguli , Timothy Levine , Samuel Wilson , Mei Chang
IPC分类号： H01L2144
CPC分类号： H01L21/76862 , C23C16/18 , C23C16/56 , H01L21/76843 , H01L21/76864 , H01L21/76868 , H01L21/76876 , H01L21/76886
摘要： A method for reducing the resistivity of a copper layer on a wafer. A moisture containing seed layer of copper is formed over a layer of material on a wafer. The copper seed layer is treated by either heat or ions from a plasma to anneal out moisture thereby reducing its resistivity and improving its adhesion to the underlying layer. A moisture free copper layer is then deposited on top of the “clean” or treated copper seed layer.
摘要翻译：一种降低晶片上铜层电阻率的方法。在晶片上的一层材料上形成含水分的铜种籽层。铜种子层通过来自等离子体的热或离子来处理以退出水分，从而降低其电阻率并改善其与下层的粘附性。然后将无水分的铜层沉积在“干净”或处理的铜籽晶层的顶部。

9. 发明授权

US08304193B2 Method for conducting an autocatalytic reaction in plugs in a microfluidic system 有权
标题翻译：在微流体系统中的插塞中进行自催化反应的方法
公开(公告)号：US08304193B2
公开(公告)日：2012-11-06
申请号：US13024155
申请日：2011-02-09
申请人： Rustem F Ismagilov , Joshua David Tice , Cory John Gerdts , Bo Zheng
发明人： Rustem F Ismagilov , Joshua David Tice , Cory John Gerdts , Bo Zheng
IPC分类号： C12Q1/68
CPC分类号： B01L3/502784 , B01D9/0072 , B01D2009/0086 , B01F5/0646 , B01F5/0647 , B01F13/0071 , B01J14/00 , B01J19/0046 , B01J19/0093 , B01J2219/00286 , B01J2219/00576 , B01J2219/00585 , B01J2219/00599 , B01J2219/00722 , B01J2219/00725 , B01J2219/00736 , B01J2219/00756 , B01J2219/00783 , B01J2219/00837 , B01J2219/0086 , B01J2219/00869 , B01J2219/00889 , B01J2219/00891 , B01J2219/00894 , B01J2219/00903 , B01J2219/00975 , B01J2219/00977 , B01L3/502715 , B01L3/50273 , B01L2200/0673 , B01L2200/12 , B01L2300/0867 , B01L2400/0487 , B82Y30/00 , C07K14/43 , C12N9/2462 , C12Q1/6806 , C12Y302/01017 , C30B7/14 , C30B29/54 , C30B29/58 , G01N1/28 , G01N35/08 , Y10T117/10 , Y10T137/0318 , Y10T436/117497 , Y10T436/143333 , Y10T436/25
摘要： The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.
摘要翻译：本发明提供微制造的底物和在这些底物内进行反应的方法。反应发生在在载体流体流中输送的塞子中。

10. 发明申请

US20120047175A1 Short Point-Of-Interest Title Generation 审中-公开
标题翻译：短期利益标题生成
公开(公告)号：US20120047175A1
公开(公告)日：2012-02-23
申请号：US13266614
申请日：2009-04-29
申请人： Jiang Qian , Vincent Zhou , Bo Zheng , Yu Zheng
发明人： Jiang Qian , Vincent Zhou , Bo Zheng , Yu Zheng
IPC分类号： G06F17/30
CPC分类号： G06F17/2745
摘要： Short POI titles are generated by removing unnecessary administrative area prefixes from existing POI titles and replacing necessary administrative area prefixes with shorter aliases. Administrative area prefixes are identified and analyzed to determine whether they are necessary. The analysis includes determining (1) whether the remainders with the prefixes excluded include a common suffix as a prefix, and (2) whether the remainders are unique in an applicable metropolis area. If a remainder does not include as a prefix a common suffix and is unique in the applicable metropolis area, the corresponding prefix is determined unnecessary and removed from the existing POI title to generate a short POI title. Otherwise, the corresponding prefix is determined necessary and replaced with a shorter alias to generate a short POI title.
摘要翻译：通过从现有POI标题中删除不必要的管理区域前缀，并用较短的别名替换必要的管理区域前缀来生成简短的POI标题。对行政区域前缀进行识别和分析，以确定它们是否必要。分析包括确定（1）排除前缀的余数是否包括作为前缀的公共后缀，以及（2）在适用的大都会区域中剩余部分是否是唯一的。如果余数不包括作为前缀的公共后缀，并且在适用的大都市区域中是唯一的，则相应的前缀被确定为不必要的并且从现有POI标题中移除以生成短的POI标题。否则，相应的前缀被确定为必需，并用较短的别名替换以生成短的POI标题。

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