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1. 发明授权

US06355106B1 Deposition of copper with increased adhesion 有权
标题翻译：沉积铜增加附着力
公开(公告)号：US06355106B1
公开(公告)日：2002-03-12
申请号：US09706321
申请日：2000-11-03
申请人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
发明人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
IPC分类号： C23C1600
CPC分类号： C23C16/0281 , C23C16/18
摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.
摘要翻译：一种用于改善铜层与晶片上的下层的粘合性的方法和装置。铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。

2. 发明授权

US06171661B2 Deposition of copper with increased adhesion 失效
标题翻译：沉积铜增加附着力
公开(公告)号：US06171661B2
公开(公告)日：2001-01-09
申请号：US09030555
申请日：1998-02-25
申请人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
发明人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
IPC分类号： B05D306
CPC分类号： C23C16/0281 , C23C16/18
摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.
摘要翻译：一种用于改善铜层与晶片上的下层的粘合性的方法和装置。铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。

3. 发明授权

US06319728B1 Method for treating a deposited film for resistivity reduction 失效
标题翻译：用于处理沉积膜以降低电阻率的方法
公开(公告)号：US06319728B1
公开(公告)日：2001-11-20
申请号：US09092477
申请日：1998-06-05
申请人： Mohan K. Bhan , Ling Chen , Bo Zheng , Justin Jones , Seshadri Ganguli , Timothy Levine , Samuel Wilson , Mei Chang
发明人： Mohan K. Bhan , Ling Chen , Bo Zheng , Justin Jones , Seshadri Ganguli , Timothy Levine , Samuel Wilson , Mei Chang
IPC分类号： H01L2144
CPC分类号： H01L21/76862 , C23C16/18 , C23C16/56 , H01L21/76843 , H01L21/76864 , H01L21/76868 , H01L21/76876 , H01L21/76886
摘要： A method for reducing the resistivity of a copper layer on a wafer. A moisture containing seed layer of copper is formed over a layer of material on a wafer. The copper seed layer is treated by either heat or ions from a plasma to anneal out moisture thereby reducing its resistivity and improving its adhesion to the underlying layer. A moisture free copper layer is then deposited on top of the “clean” or treated copper seed layer.
摘要翻译：一种降低晶片上铜层电阻率的方法。在晶片上的一层材料上形成含水分的铜种籽层。铜种子层通过来自等离子体的热或离子来处理以退出水分，从而降低其电阻率并改善其与下层的粘附性。然后将无水分的铜层沉积在“干净”或处理的铜籽晶层的顶部。

4. 发明授权

US08747686B2 Methods of end point detection for substrate fabrication processes 失效
标题翻译：基板制造工艺的终点检测方法
公开(公告)号：US08747686B2
公开(公告)日：2014-06-10
申请号：US13360633
申请日：2012-01-27
申请人： Bo Zheng , Mei Chang , Arvind Sundarrajan
发明人： Bo Zheng , Mei Chang , Arvind Sundarrajan
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： C23C14/54 , C23C14/564 , C23C16/4401 , C23C16/4404 , C23C16/52
摘要： Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.
摘要翻译：提供了用于分析过程终点的方法和底物处理系统。检测和监测该方法的副产物以确定基材处理室内各种类型的反应过程的完成。这些方法提供了实时过程监控，从而减少了刚性限制其他衬底处理参数，提高室清洁效率和/或增加衬底处理生产量的需要。

5. 发明授权

US08642473B2 Methods for contact clean 有权
标题翻译：接触清洁方法
公开(公告)号：US08642473B2
公开(公告)日：2014-02-04
申请号：US13411398
申请日：2012-03-02
申请人： Mei Chang , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali K. Narasimhan
发明人： Mei Chang , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali K. Narasimhan
IPC分类号： H01L21/311
CPC分类号： H01L21/02063 , H01L21/76802 , H01L21/76814 , H01L21/76829
摘要： Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.
摘要翻译：提供了从表面除去氧化物的方法和装置，所述表面包括硅和锗中的至少一种。所述方法和装置特别适用于从接触结构的金属硅化物层去除天然氧化物。该方法和装置有利地将蚀刻停止层蚀刻工艺和自然氧化物去除工艺集成在单个室中，从而在衬底转移过程期间消除自然氧化物生长或其它污染物再沉积。此外，该方法和装置还提供了改进的三步化学反应过程，以有效地从金属硅化物层去除天然氧化物，而不会不利地改变接触结构的几何形状和形成在接触结构中的沟槽或通孔的临界尺寸。

6. 发明申请

US20120225558A1 METHODS FOR CONTACT CLEAN 有权
标题翻译：联系清洁方法
公开(公告)号：US20120225558A1
公开(公告)日：2012-09-06
申请号：US13411398
申请日：2012-03-02
申请人： MEI CHANG , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali Narasimhan
发明人： MEI CHANG , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali Narasimhan
IPC分类号： H01L21/311 , H01L21/3105
CPC分类号： H01L21/02063 , H01L21/76802 , H01L21/76814 , H01L21/76829
摘要： Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.
摘要翻译：提供了从表面除去氧化物的方法和装置，所述表面包括硅和锗中的至少一种。所述方法和装置特别适用于从接触结构的金属硅化物层去除天然氧化物。该方法和装置有利地将蚀刻停止层蚀刻工艺和自然氧化物去除工艺集成在单个室中，从而在衬底转移过程期间消除自然氧化物生长或其它污染物再沉积。此外，该方法和设备还提供了改进的三步化学反应过程，以有效地从金属硅化物层去除天然氧化物，而不会不利地改变接触结构的几何形状和形成在接触结构中的沟槽或通孔的临界尺寸。

7. 发明授权

US06179925B2 Method and apparatus for improved control of process and purge material in substrate processing system 失效
标题翻译：用于改善衬底处理系统中工艺和吹扫材料控制的方法和装置
公开(公告)号：US06179925B2
公开(公告)日：2001-01-30
申请号：US09311449
申请日：1999-05-14
申请人： John Schmitt , Bo Zheng , Mei Chang , Stephen Voss
发明人： John Schmitt , Bo Zheng , Mei Chang , Stephen Voss
IPC分类号： C23C1600
CPC分类号： C23C16/45561 , C23C16/4481 , C23C16/52
摘要： A method and apparatus for control of precursor and purge additive materials in a deposition system comprising a precursor material delivery system and a plurality of purge additive transfer lines connected between or at components in the precursor material delivery system. One of the plurality of purge additive transfer lines is connected between an ampoule and a liquid mass flow controller, another is connected between the liquid mass flow controller and a vaporizer and a third is connected to the vaporizer. The apparatus further comprises a process chamber connected to the precursor material delivery system and having a susceptor wherein one of the plurality of purge additive transfer lines is connected to the susceptor. With the apparatus and accompanying method, formation of particulate contaminants is greatly reduced. The purge additive provided at strategic locations within the deposition system provides a stabilizing effect to any precursor that remains in the transfer lines and helps to control the CVD reaction at the exclusion zone.
摘要翻译：一种用于在沉积系统中控制前体和吹扫添加剂材料的方法和装置，包括前体材料输送系统和连接在前体材料输送系统中的组分之间或其中的多个清除添加剂输送管线。多个清洗添加剂输送管线之一连接在安瓿和液体质量流量控制器之间，另一个连接在液体质量流量控制器和蒸发器之间，第三个连接到蒸发器。该设备还包括连接到前体材料输送系统并具有基座的处理室，其中多个清除添加剂输送管线中的一个连接到基座。利用该装置和伴随方法，大大降低了颗粒污染物的形成。提供在沉积系统内的战略位置处的清洗添加剂对保留在传输管线中的任何前体提供了稳定作用，并有助于控制排除区域的CVD反应。

8. 发明申请

US20130193108A1 METHODS OF END POINT DETECTION FOR SUBSTRATE FABRICATION PROCESSES 失效
标题翻译：基板制造工艺的端点检测方法
公开(公告)号：US20130193108A1
公开(公告)日：2013-08-01
申请号：US13360633
申请日：2012-01-27
申请人： Bo Zheng , Mei Chang , Arvind Sundarrajan
发明人： Bo Zheng , Mei Chang , Arvind Sundarrajan
IPC分类号： B44C1/22 , B08B7/00 , B08B7/04 , C23C16/52 , B05C5/00
CPC分类号： C23C14/54 , C23C14/564 , C23C16/4401 , C23C16/4404 , C23C16/52
摘要： Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.
摘要翻译：提供了用于分析过程终点的方法和底物处理系统。检测和监测该方法的副产物以确定基材处理室内各种类型的反应过程的完成。这些方法提供了实时过程监控，从而减少了刚性限制其他衬底处理参数，提高室清洁效率和/或增加衬底处理生产量的需要。

9. 发明授权

US6050506A Pattern of apertures in a showerhead for chemical vapor deposition 失效
标题翻译：用于化学气相沉积的喷头中的孔的图案
公开(公告)号：US6050506A
公开(公告)日：2000-04-18
申请号：US23437
申请日：1998-02-13
申请人： Xin Sheng Guo , Keith Koai , Ling Chen , Mohan K. Bhan , Bo Zheng
发明人： Xin Sheng Guo , Keith Koai , Ling Chen , Mohan K. Bhan , Bo Zheng
IPC分类号： C23C16/44 , C23C16/455 , B05B1/14
CPC分类号： C23C16/45565 , C23C16/455
摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of metals. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduce flow impedance is particularly useful for CVD of copper.
摘要翻译：用于在化学气相沉积（CVD）中分散气体在晶片上的喷头，特别是用于金属CVD。孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下可以消除喷头表面背面的第二个穿孔板，从而减少液体夹带气体的流动阻抗和所需的压力，其倾向于在较高压力下沉积。减少流阻抗对于铜的CVD特别有用。

10. 发明授权

US06410089B1 Chemical vapor deposition of copper using profiled distribution of showerhead apertures 失效
标题翻译：铜的化学气相沉积使用喷头孔的分布分布
公开(公告)号：US06410089B1
公开(公告)日：2002-06-25
申请号：US09513723
申请日：2000-02-24
申请人： Xin Sheng Guo , Keith Koai , Ling Chen , Mohan K. Bhan , Bo Zheng
发明人： Xin Sheng Guo , Keith Koai , Ling Chen , Mohan K. Bhan , Bo Zheng
IPC分类号： C23C1680
CPC分类号： C23C16/45565 , C23C16/455
摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of copper in a thermal process using a precursor such as HFAC-Cu-TMVS. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduced flow impedance is particularly useful for CVD of copper.
摘要翻译：用于在化学气相沉积（CVD）中在晶片上分配气体的喷头，特别是使用诸如HFAC-Cu-TMVS的前体的热处理中的CVD CVD。孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下，可以消除喷头表面背面的第二多孔板，从而减少液体夹带气体的流动阻抗和所需的压力，其倾向于在较高压力下沉积。减小的流阻抗对于铜的CVD是特别有用的。

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