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1. 发明授权

US06673724B2 Pulsed-mode RF bias for side-wall coverage improvement 有权
标题翻译：用于侧壁覆盖改进的脉冲模式RF偏置
公开(公告)号：US06673724B2
公开(公告)日：2004-01-06
申请号：US10037018
申请日：2001-11-07
申请人： John Forster , Praburam Gopalraja , Bradley O. Stimson , Liubo Hong
发明人： John Forster , Praburam Gopalraja , Bradley O. Stimson , Liubo Hong
IPC分类号： H01L2131
CPC分类号： C23C14/345 , C23C14/046 , H01J37/32082 , H01J37/32431 , H01J37/3405 , H01L21/2855 , H01L21/76877
摘要： The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.
摘要翻译：本发明提供一种使用溅射电离材料在基板上实现一种或多种材料的适形步骤覆盖的方法和装置。目标物提供由等离子体溅射的材料源，然后由感应线圈电离，从而产生电子和离子。在一个实施例中，对衬底和靶的信号中的一个或两个进行调制。优选地，到衬底的调制信号包括负电压部分和零电压部分。

2. 发明授权

US06344419B1 Pulsed-mode RF bias for sidewall coverage improvement 失效
标题翻译：用于侧壁覆盖改进的脉冲模式RF偏置
公开(公告)号：US06344419B1
公开(公告)日：2002-02-05
申请号：US09454355
申请日：1999-12-03
申请人： John Forster , Praburam Gopalraja , Bradley O. Stimson , Liubo Hong
发明人： John Forster , Praburam Gopalraja , Bradley O. Stimson , Liubo Hong
IPC分类号： H01L2130
CPC分类号： C23C14/345 , C23C14/046 , H01J37/32082 , H01J37/32431 , H01J37/3405 , H01L21/2855 , H01L21/76877
摘要： The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.
摘要翻译：本发明提供一种使用溅射电离材料在基板上实现一种或多种材料的适形步骤覆盖的方法和装置。目标物提供由等离子体溅射的材料源，然后由感应线圈电离，从而产生电子和离子。在一个实施例中，对衬底和靶的信号中的一个或两个进行调制。优选地，到衬底的调制信号包括负电压部分和零电压部分。

3. 发明授权

US07335282B2 Sputtering using an unbalanced magnetron 有权
标题翻译：使用不平衡磁控管进行溅射
公开(公告)号：US07335282B2
公开(公告)日：2008-02-26
申请号：US10939832
申请日：2004-09-13
申请人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
发明人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.
摘要翻译：溅射工艺和磁控管对于低压等离子体溅射或持续自溅射特别有利，其中磁控管具有减小的面积但是完全的目标覆盖。磁控管包括围绕内极面的外极面，其间具有间隙。本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。由此，可以实现低压高离子化分级的溅射。

4. 发明申请

US20050255691A1 Self-ionized and inductively-coupled plasma for sputtering and resputtering 审中-公开
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US20050255691A1
公开(公告)日：2005-11-17
申请号：US11184615
申请日：2005-07-19
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/04 , C23C14/34 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在相同或不同的室中。此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。辅助磁体可以是永磁体或电磁体。

5. 发明申请

US20050208767A1 Method of depositing a tantalum nitride / tantalum diffusion barrier layer system 失效
标题翻译：沉积氮化钽/钽扩散阻挡层体系的方法
公开(公告)号：US20050208767A1
公开(公告)日：2005-09-22
申请号：US11069348
申请日：2005-02-28
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
IPC分类号： C23C14/06 , C23C14/16 , C23C14/32 , H01L21/285 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
摘要翻译：我们已经发现了一种提供大约从大约2埃到大约100埃的Ta N种子层的薄的方法，其可以在钽沉积在Ta上时用于诱导形成α钽 N种子层。此外，Ta N N种子层在30微米范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。在该方法的一个实施方案中，在其表面上改变TaN膜以形成Ta N N种子层。在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

6. 发明申请

US20050189217A1 Method and apparatus for forming a barrier layer on a substrate 审中-公开
公开(公告)号：US20050189217A1
公开(公告)日：2005-09-01
申请号：US11110608
申请日：2005-04-20
申请人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
发明人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
IPC分类号： C23C14/04 , C23C14/06 , C23C14/18 , C23C14/58 , H01L21/285 , H01L21/768 , C23C14/34
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/0641 , C23C14/185 , C23C14/5873 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

7. 发明申请

US20070241458A1 Metal / metal nitride barrier layer for semiconductor device applications 失效
标题翻译：用于半导体器件应用的金属/金属氮化物阻挡层
公开(公告)号：US20070241458A1
公开(公告)日：2007-10-18
申请号：US11809153
申请日：2007-05-30
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
IPC分类号： H01L23/48
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.
摘要翻译：用于半导体器件应用的金属/金属氮化物阻挡层。阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

8. 发明申请

US20060070875A1 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US20060070875A1
公开(公告)日：2006-04-06
申请号：US11229139
申请日：2005-09-15
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C14/00 , C25B11/00
CPC分类号： C23C14/34 , H01J37/321 , H01J37/34
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

9. 发明授权

US07704887B2 Remote plasma pre-clean with low hydrogen pressure 有权
标题翻译：远程等离子体预清洁，氢气压力低
公开(公告)号：US07704887B2
公开(公告)日：2010-04-27
申请号：US11334803
申请日：2006-01-17
申请人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
发明人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
IPC分类号： B08B3/00 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32357 , H01J37/32422 , H01J37/3266 , H01L21/02068 , H01L21/67028 , H01L21/67069 , H01L21/76814
摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.
摘要翻译：一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。远程等离子体源产生主要为氢自由基的等离子体。氢气压力可以保持相对较低，例如在30毫乇。任选地，氦气可以被加到处理气体中，氢分压保持在150毫乇以下。在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。优选地，诸如磁性过滤器的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管包括与介电喷头和歧管衬套组合的可移除绝缘衬垫。

10. 发明授权

US06193855B1 Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage 失效
标题翻译：使用调制感应功率和偏置功率来减少悬垂和改善底部覆盖
公开(公告)号：US06193855B1
公开(公告)日：2001-02-27
申请号：US09421431
申请日：1999-10-19
申请人： Praburam Gopalraja , John Forster
发明人： Praburam Gopalraja , John Forster
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/046 , C23C14/358 , H01J37/321 , H01J37/32146 , H01J37/3405 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A plasma is struck and maintained in a processing region by coupling energy into one or more gases. A target disposed in the processing region provides a source of material to be sputtered and then ionized in the plasma environment. During deposition of material onto the substrate, the plasma density is modulated by varying the energy supplied to the plasma. During a period of plasma decay, a bias to a substrate support member is increased to a relatively higher power to periodically enhance the attraction of positively charged particles to the substrate during the afterglow period of the plasma. In one embodiment, a bias to the target is also modulated.
摘要翻译：本发明提供一种使用溅射电离材料在基板上实现一种或多种材料的适形步骤覆盖的方法和装置。通过将能量耦合到一个或多个气体中，等离子体被撞击并保持在处理区域中。设置在处理区域中的靶提供待溅射的材料源，然后在等离子体环境中电离。在将材料沉积到衬底上时，通过改变供给到等离子体的能量来调制等离子体密度。在等离子体衰减期间，在等离子体的余辉期间，向衬底支撑构件的偏压增加到相对较高的功率以周期性地增强带正电的微粒对衬底的吸引。在一个实施例中，对目标的偏置也被调制。

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