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    • 7. 发明申请
    • Etch and sidewall selectivity in plasma sputtering
    • 等离子体溅射中的蚀刻和侧壁选择性
    • US20070209925A1
    • 2007-09-13
    • US11373643
    • 2006-03-09
    • Xianmin TangPraburam GopalrajaJenn WangJick Yu
    • Xianmin TangPraburam GopalrajaJenn WangJick Yu
    • C23C14/32
    • C23C14/165C23C14/5873H01J37/321H01J37/3266H01J37/3408H01J2237/334H01L21/2855H01L21/32136H01L21/76844
    • A substrate processing method practiced in a plasma sputter reactor including an RF coil and two or more coaxial electromagnets, at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.
    • 在包括RF线圈和两个或更多个同轴电磁体的等离子体溅射反应器中实施的衬底处理方法,其中至少两个以不同的半径缠绕。 在阻挡层之后,例如钽被溅射沉积到通孔中,RF线圈被供电以对阻挡层进行氩溅射蚀刻,并且调节到电磁体的电流以引导氩离子,例如以消除 侧壁不对称。 例如,两个电磁铁由具有相反极性的不相等的电流供电,或者以不同高度包装的第三电磁体被供电。 在一个实施例中,转向拉直晶片边缘附近的轨迹。 在另一个实施例中,蚀刻被分成两个步骤,其中操纵以相反的角度倾斜轨迹。 本发明也可以应用于其它材料,例如铜。