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1. 发明申请

US20120285518A1 Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal 审中-公开
标题翻译：太阳能电池具有由相同金属的高和低功函调谐的硅化物形成的交错的后触点
公开(公告)号：US20120285518A1
公开(公告)日：2012-11-15
申请号：US13103583
申请日：2011-05-09
申请人： Joel P. De Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
发明人： Joel P. De Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/07 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.
摘要翻译：一种太阳能电池，其具有覆盖吸收层的整个后表面的n型和p型交叉指接头（IBC）。 IBC的空间分离是在垂直于后表面的方向上，从而提供具有零占位分隔的无边界接触。随着触点在背面，入射在电池前表面的光子可以被吸收而不会有任何阴影。

2. 发明申请

US20120285517A1 SCHOTTKY BARRIER SOLAR CELLS WITH HIGH AND LOW WORK FUNCTION METAL CONTACTS 审中-公开
标题翻译： SCHOTTKY BARRIER太阳能电池具有高低功能金属接触
公开(公告)号：US20120285517A1
公开(公告)日：2012-11-15
申请号：US13103490
申请日：2011-05-09
申请人： Joel P. de Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Conal Eugene Murray , Devendra K. Sadana , Katherine L. Saenger , Ghavam Shahidi , Davood Shahrjerdi , Zhen Zhang
发明人： Joel P. de Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Conal Eugene Murray , Devendra K. Sadana , Katherine L. Saenger , Ghavam Shahidi , Davood Shahrjerdi , Zhen Zhang
IPC分类号： H01L31/108 , H01L31/18
CPC分类号： H01L31/07 , H01L31/0321 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A Schottky Barrier solar cell having at least one of a low work function region and a high work function region provided on the front or back surface of a lightly-doped absorber material, which may be produced in a variety of different geometries. The method of producing the Schottky Barrier solar cells allows for short processing times and the use of low temperatures.
摘要翻译：一种肖特基势垒太阳能电池，其具有设置在轻掺杂的吸收材料的前表面或后表面上的低功函数区域和高功函数区域中的至少一个，其可以以各种不同的几何形状生产。生产肖特基势垒太阳能电池的方法允许短的处理时间和低温的使用。

3. 发明授权

US10396229B2 Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal 有权
公开(公告)号：US10396229B2
公开(公告)日：2019-08-27
申请号：US13103583
申请日：2011-05-09
申请人： Joel P. De Souza , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
发明人： Joel P. De Souza , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
IPC分类号： H01L31/07 , H01L31/0224 , H01L31/18 , H01L31/068
摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.

4. 发明申请

US20100221867A1 LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS 审中-公开
标题翻译：用于单晶太阳能电池的低成本SOI衬底
公开(公告)号：US20100221867A1
公开(公告)日：2010-09-02
申请号：US12436249
申请日：2009-05-06
申请人： Stephen W. Bedell , Joel P. de Souza , Keith E. Fogel , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger , Ghavam G. Shahidi
发明人： Stephen W. Bedell , Joel P. de Souza , Keith E. Fogel , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger , Ghavam G. Shahidi
IPC分类号： H01L31/0376 , H01L21/762
CPC分类号： H01L31/03921 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02667 , H01L21/7624 , H01L21/76245 , H01L21/76262 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： A lost cost method for fabricating SOI substrates is provided. The method includes forming a stack of p-type doped amorphous Si-containing layers on a semiconductor region of a substrate by utilizing an evaporation deposition process. A solid phase recrystallization step is then performed to convert the amorphous Si-containing layers within the stack into a stack of p-type doped single crystalline Si-containing layers. After recrystallization, the single crystalline Si-containing layers are subjected to anodization and at least an oxidation step to form an SOI substrate. Solar cells and/or other semiconductor devices can be formed on the upper surface of the inventive SOI substrate.
摘要翻译：提供了一种用于制造SOI衬底的损耗成本方法。该方法包括通过利用蒸发沉积工艺在衬底的半导体区域上形成一层p型掺杂的非晶态含Si层。然后进行固相重结晶步骤，以将叠层内的非晶态含硅层转化为p型掺杂单晶含Si层的堆叠。重结晶后，对单晶含Si层进行阳极氧化和至少氧化步骤以形成SOI衬底。太阳能电池和/或其他半导体器件可以形成在本发明的SOI衬底的上表面上。

5. 发明申请

US20110212622A1 SURFACE TEXTURING USING A LOW QUALITY DIELECTRIC LAYER 审中-公开
标题翻译：表面纹理使用低品质电介质层
公开(公告)号：US20110212622A1
公开(公告)日：2011-09-01
申请号：US12714426
申请日：2010-02-26
申请人： Joel P. Desouza , Harold J. Hovel , Daniel Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger
发明人： Joel P. Desouza , Harold J. Hovel , Daniel Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L21/311
CPC分类号： H01L31/02363 , Y02E10/50
摘要： A low cost method is described for forming a textured Si surface such as for a solar cell which includes forming a dielectric layer containing pinholes, anisotropically etching through the pinholes to form inverted pyramids in the Si surface and removing the dielectric layer thereby producing a high light trapping efficiency for incident radiation.
摘要翻译：描述了一种用于形成纹理Si表面的低成本方法，例如用于太阳能电池，其包括形成包含针孔的电介质层，通过针孔各向异性蚀刻以在Si表面中形成倒置的金字塔并除去电介质层，从而产生高光捕获效率的入射辐射。

6. 发明申请

US20120156861A1 QUASI-HYDROPHOBIC Si-Si WAFER BONDING USING HYDROPHILIC Si SURFACES AND DISSOLUTION OF INTERFACIAL BONDING OXIDE 审中-公开
标题翻译：使用水解硅表面和界面结合氧化物的溶解度的偶氮硅Si-Si波形粘结
公开(公告)号：US20120156861A1
公开(公告)日：2012-06-21
申请号：US13405760
申请日：2012-02-27
申请人： Joel P. de Souza , John A. Ott , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger
发明人： Joel P. de Souza , John A. Ott , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L21/302
CPC分类号： H01L21/187 , H01L21/76251
摘要： Methods for removing or reducing the thickness of a material layer remaining at Si-Si interfaces after silicon wafer bonding. The methods include an anneal which is performed at a temperature sufficient to dissolve oxide, yet not melt silicon.
摘要翻译：在硅晶片接合之后去除或减少残留在Si-Si界面处的材料层的厚度的方法。所述方法包括在足以溶解氧化物但不熔融硅的温度下进行的退火。

7. 发明申请

US20080258220A1 ION IMPLANTATION COMBINED WITH IN SITU OR EX SITU HEAT TREATMENT FOR IMPROVED FIELD EFFECT TRANSISTORS 有权
标题翻译：用于改进现场效应晶体管的原位或原位热处理组合的离子植入
公开(公告)号：US20080258220A1
公开(公告)日：2008-10-23
申请号：US12128040
申请日：2008-05-28
申请人： Stephen W. Bedell , Joel P. De Souza , Zhibin Ren , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger , Ghavam Shahidi
发明人： Stephen W. Bedell , Joel P. De Souza , Zhibin Ren , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger , Ghavam Shahidi
IPC分类号： H01L27/12 , H01L21/8234
CPC分类号： H01L29/66628 , H01L21/26513 , H01L21/324 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L29/165 , H01L29/66636 , H01L29/66772 , H01L29/7848 , H01L29/78618 , H01L29/78684 , Y10S438/909 , Y10S438/943
摘要： This invention teaches methods of combining ion implantation steps with in situ or ex situ heat treatments to avoid and/or minimize implant-induced amorphization (a potential problem for source/drain (S/D) regions in FETs in ultrathin silicon on insulator layers) and implant-induced plastic relaxation of strained S/D regions (a potential problem for strained channel FETs in which the channel strain is provided by embedded S/D regions lattice mismatched with an underlying substrate layer). In a first embodiment, ion implantation is combined with in situ heat treatment by performing the ion implantation at elevated temperature. In a second embodiment, ion implantation is combined with ex situ heat treatments in a “divided-dose-anneal-in-between” (DDAB) scheme that avoids the need for tooling capable of performing hot implants.
摘要翻译：本发明教导了将离子注入步骤与原位或非原位热处理组合以避免和/或最小化植入物诱导的非晶化（对绝缘体层上的超薄硅中的FET中的源极/漏极（S / D）区域的潜在问题）的方法，以及应变S / D区域的植入物诱导的塑性弛豫（对于其中通道应变由嵌入的S / D区域晶格与下面的基底层不匹配而提供的应变通道FET的潜在问题）。在第一实施例中，通过在升高的温度下进行离子注入将离子注入与原位热处理组合。在第二实施例中，离子注入与“分剂量退火中间”（DDAB）方案中的非原位热处理组合，避免了对能够进行热植入的加工的需要。

8. 发明申请

US20090298258A1 QUASI-HYDROPHOBIC Si-Si WAFER BONDING USING HYDROPHILIC Si SURFACES AND DISSOLUTION OF INTERFACIAL BONDING OXIDE 有权
标题翻译：使用水解硅表面和界面结合氧化物的溶解度的偶氮硅Si-Si波形粘结
公开(公告)号：US20090298258A1
公开(公告)日：2009-12-03
申请号：US12538115
申请日：2009-08-08
申请人： Joel P. de Souza , John A. Ott , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger
发明人： Joel P. de Souza , John A. Ott , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , H01L21/76251
摘要： The present invention provides a method for removing or reducing the thickness of ultrathin interfacial oxides remaining at Si—Si interfaces after silicon wafer bonding. In particular, the invention provides a method for removing ultrathin interfacial oxides remaining after hydrophilic Si—Si wafer bonding to create bonded Si—Si interfaces having properties comparable to those achieved with hydrophobic bonding. Interfacial oxide layers of order of about 2 to about 3 nm are dissolved away by high temperature annealing, for example, an anneal at 1300°-1330° C. for 1-5 hours. The inventive method is used to best advantage when the Si surfaces at the bonded interface have different surface orientations, for example, when a Si surface having a (100) orientation is bonded to a Si surface having a (110) orientation. In a more general aspect of the invention, the similar annealing processes may be used to remove undesired material disposed at a bonded interface of two silicon-containing semiconductor materials. The two silicon-containing semiconductor materials may be the same or different in surface crystal orientation, microstructure (single-crystal, polycrystalline, or amorphous), and composition.
摘要翻译：本发明提供一种在硅晶片接合之后去除或减少残留在Si-Si界面处的超薄界面氧化物的厚度的方法。特别地，本发明提供了一种去除在亲水性Si-Si晶片接合之后残留的超薄界面氧化物以产生具有与通过疏水性接合实现的性能相当的特性的结合Si-Si界面的方法。约2至约3nm的界面氧化物层通过高温退火（例如1300°-1330℃退火1-5小时）被溶解掉。当粘合界面处的Si表面具有不同的表面取向时，例如当具有（100）取向的Si表面被结合到具有（110）取向的Si表面时，本发明的方法被用于最好的优点。在本发明的更一般的方面中，类似的退火工艺可用于去除设置在两个含硅半导体材料的键合界面处的不期望的材料。两种含硅半导体材料在表面晶体取向，微结构（单晶，多晶或无定形）和组成上可以相同或不同。

9. 发明申请

US20110230030A1 STRAIN-PRESERVING ION IMPLANTATION METHODS 失效
标题翻译：应变保留离子植入方法
公开(公告)号：US20110230030A1
公开(公告)日：2011-09-22
申请号：US12724608
申请日：2010-03-16
申请人： Joel P. de Souza , Masafumi Hamaguchi , Ahmet S. Ozcan , Devendra K. Sadana , Katherine L. Saenger , Donald R. Wall
发明人： Joel P. de Souza , Masafumi Hamaguchi , Ahmet S. Ozcan , Devendra K. Sadana , Katherine L. Saenger , Donald R. Wall
IPC分类号： H01L21/336
CPC分类号： H01L21/26506 , H01L21/324 , H01L29/165 , H01L29/6659 , H01L29/7833 , H01L29/7848
摘要： An embedded epitaxial semiconductor portion having a different composition than matrix of the semiconductor substrate is formed with a lattice mismatch and epitaxial alignment with the matrix of the semiconductor substrate. The temperature of subsequent ion implantation steps is manipulated depending on the amorphizing or non-amorphizing nature of the ion implantation process. For a non-amorphizing ion implantation process, the ion implantation processing step is performed at an elevated temperature, i.e., a temperature greater than nominal room temperature range. For an amorphizing ion implantation process, the ion implantation processing step is performed at nominal room temperature range or a temperature lower than nominal room temperature range. By manipulating the temperature of ion implantation, the loss of strain in a strained semiconductor alloy material is minimized.
摘要翻译：具有与半导体衬底的矩阵不同的组成的嵌入式外延半导体部分与半导体衬底的矩阵形成晶格失配和外延对准。随后离子注入步骤的温度根据离子注入工艺的非晶化或非非晶化性质进行操作。对于非非晶化离子注入工艺，离子注入处理步骤在升高的温度，即大于标称室温范围的温度下进行。对于非晶化离子注入工艺，离子注入处理步骤在标称室温范围或低于标称室温范围的温度下进行。通过操纵离子注入的温度，使应变半导体合金材料中的应变损失最小化。

10. 发明授权

US07253034B2 Dual SIMOX hybrid orientation technology (HOT) substrates 失效
标题翻译：双SIMOX混合取向技术（HOT）底物
公开(公告)号：US07253034B2
公开(公告)日：2007-08-07
申请号：US10902557
申请日：2004-07-29
申请人： Kevin K. Chan , Joel P. de Souza , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger
发明人： Kevin K. Chan , Joel P. de Souza , Alexander Reznicek , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L21/70 , H01L21/762
CPC分类号： H01L21/84 , H01L21/76243 , H01L21/76267 , H01L27/1203 , H01L27/1207
摘要： This invention provides a separation by implanted oxygen (SIMOX) method for forming planar hybrid orientation semiconductor-on-insulator (SOI) substrates having different crystal orientations, thereby making it possible for devices to be fabricated on crystal orientations providing optimal performance. The method includes the steps of selecting a substrate having a base semiconductor layer having a first crystallographic orientation separated by a thin insulating layer from a top semiconductor layer having a second crystallographic orientation; replacing the top semiconductor layer in selected regions with an epitaxially grown semiconductor having the first crystallographic orientation; then using an ion implantation and annealing method to (i) form a buried insulating region within the epitaxially grown semiconductor material, and (ii) thicken the insulating layer underlying the top semiconductor layer, thereby forming a hybrid orientation substrate in which the two semiconductor materials with different crystallographic orientations have substantially the same thickness and are both disposed on a common buried insulator layer. In a variation of this method, an ion implantation and annealing method is instead used to extend an auxiliary buried insulator layer (initially underlying the base semiconductor layer) upwards (i) into the epitaxially grown semiconductor, and (ii) up to the insulating layer underlying the top semiconductor layer.
摘要翻译：本发明提供了通过注入氧（SIMOX）分离方法，用于形成具有不同晶体取向的平面杂化取向绝缘体上半导体（SOI）衬底，从而使得可以以提供最佳性能的晶体取向来制造器件。该方法包括以下步骤：从具有第二晶体取向的顶部半导体层选择具有由薄绝缘层分离的第一晶体取向的基底半导体层的衬底; 用具有第一晶体取向的外延生长的半导体代替选定区域中的顶部半导体层; 然后使用离子注入和退火方法来（i）在外延生长的半导体材料内形成掩埋绝缘区，并且（ii）加厚顶部半导体层下面的绝缘层，从而形成混合取向衬底，其中两个半导体材料具有不同的晶体取向具有基本上相同的厚度并且均设置在公共掩埋绝缘体层上。在该方法的变型中，替代地使用离子注入和退火方法将辅助掩埋绝缘体层（最初在基底半导体层下面）向上（i）延伸到外延生长的半导体中，以及（ii）直到绝缘层在顶部半导体层下面。

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