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1. 发明申请

US20120285518A1 Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal 审中-公开
标题翻译：太阳能电池具有由相同金属的高和低功函调谐的硅化物形成的交错的后触点
公开(公告)号：US20120285518A1
公开(公告)日：2012-11-15
申请号：US13103583
申请日：2011-05-09
申请人： Joel P. De Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
发明人： Joel P. De Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/07 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.
摘要翻译：一种太阳能电池，其具有覆盖吸收层的整个后表面的n型和p型交叉指接头（IBC）。 IBC的空间分离是在垂直于后表面的方向上，从而提供具有零占位分隔的无边界接触。随着触点在背面，入射在电池前表面的光子可以被吸收而不会有任何阴影。

2. 发明申请

US20120285517A1 SCHOTTKY BARRIER SOLAR CELLS WITH HIGH AND LOW WORK FUNCTION METAL CONTACTS 审中-公开
标题翻译： SCHOTTKY BARRIER太阳能电池具有高低功能金属接触
公开(公告)号：US20120285517A1
公开(公告)日：2012-11-15
申请号：US13103490
申请日：2011-05-09
申请人： Joel P. de Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Conal Eugene Murray , Devendra K. Sadana , Katherine L. Saenger , Ghavam Shahidi , Davood Shahrjerdi , Zhen Zhang
发明人： Joel P. de Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Conal Eugene Murray , Devendra K. Sadana , Katherine L. Saenger , Ghavam Shahidi , Davood Shahrjerdi , Zhen Zhang
IPC分类号： H01L31/108 , H01L31/18
CPC分类号： H01L31/07 , H01L31/0321 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A Schottky Barrier solar cell having at least one of a low work function region and a high work function region provided on the front or back surface of a lightly-doped absorber material, which may be produced in a variety of different geometries. The method of producing the Schottky Barrier solar cells allows for short processing times and the use of low temperatures.
摘要翻译：一种肖特基势垒太阳能电池，其具有设置在轻掺杂的吸收材料的前表面或后表面上的低功函数区域和高功函数区域中的至少一个，其可以以各种不同的几何形状生产。生产肖特基势垒太阳能电池的方法允许短的处理时间和低温的使用。

3. 发明申请

US20110212622A1 SURFACE TEXTURING USING A LOW QUALITY DIELECTRIC LAYER 审中-公开
标题翻译：表面纹理使用低品质电介质层
公开(公告)号：US20110212622A1
公开(公告)日：2011-09-01
申请号：US12714426
申请日：2010-02-26
申请人： Joel P. Desouza , Harold J. Hovel , Daniel Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger
发明人： Joel P. Desouza , Harold J. Hovel , Daniel Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L21/311
CPC分类号： H01L31/02363 , Y02E10/50
摘要： A low cost method is described for forming a textured Si surface such as for a solar cell which includes forming a dielectric layer containing pinholes, anisotropically etching through the pinholes to form inverted pyramids in the Si surface and removing the dielectric layer thereby producing a high light trapping efficiency for incident radiation.
摘要翻译：描述了一种用于形成纹理Si表面的低成本方法，例如用于太阳能电池，其包括形成包含针孔的电介质层，通过针孔各向异性蚀刻以在Si表面中形成倒置的金字塔并除去电介质层，从而产生高光捕获效率的入射辐射。

4. 发明授权

US07935612B1 Layer transfer using boron-doped SiGe layer 有权
标题翻译：使用硼掺杂的SiGe层进行层转移
公开(公告)号：US07935612B1
公开(公告)日：2011-05-03
申请号：US12700801
申请日：2010-02-05
申请人： Stephen Bedell , Keith Fogel , Daniel Inns , Jeehwan Kim , Devendra Sadana , James Vichiconti
发明人： Stephen Bedell , Keith Fogel , Daniel Inns , Jeehwan Kim , Devendra Sadana , James Vichiconti
IPC分类号： H01L21/30 , H01L21/02
CPC分类号： H01L21/187
摘要： A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped SiGe layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron-doped SiGe layer is configured to propagate a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.
摘要翻译：使用硼掺杂硅锗（SiGe）层进行层转移的方法包括在体硅衬底上形成硼掺杂的SiGe层; 在掺杂硼的SiGe层上形成上硅（Si）层; 氢化硼掺杂的SiGe层; 将上部Si层结合到替代的基底上; 并在硼掺杂的SiGe层和体硅衬底之间的界面处传播断裂。使用硼掺杂硅锗（SiGe）层的层转移系统包括体硅衬底; 形成在本体硅衬底上的硼掺杂SiGe层，使得掺杂硼的SiGe层位于上硅（Si）层的下方，其中掺硼的SiGe层被配置为在硼掺杂的SiGe层和硼硅掺杂SiGe层氢化后的体硅衬底; 以及与上部Si层接合的替代基板。

5. 发明申请

US20120052618A1 Diffusion Sources From Silicon Based Liquid Precursors 有权
标题翻译：来自硅基液体前体的扩散源
公开(公告)号：US20120052618A1
公开(公告)日：2012-03-01
申请号：US12873320
申请日：2010-09-01
申请人： Daniel Inns
发明人： Daniel Inns
IPC分类号： H01L21/225 , H01L31/18
CPC分类号： H01L21/228 , H01L21/2225 , H01L21/2255 , H01L31/068 , H01L31/1804 , Y02E10/547
摘要： Methods for selectively diffusing dopants into a substrate wafer are provided. A liquid precursor is doped with dopants. The liquid precursor is selected from a group comprising monomers, polymers, and oligomers of silicon and hydrogen. The doped liquid precursor is deposited on a surface of the substrate wafer to create a doped film. The doped film is heated on the substrate wafer for diffusing the dopants from the doped film into the substrate wafer at different diffusion rates to create a heavily diffused region and a lightly diffused region in the substrate wafer. The method disclosed herein further comprises selective curing of the doped film on the surface of the substrate wafer. The selectively cured doped film acts as a diffusion source for selectively diffusing the dopants into the substrate wafer.
摘要翻译：提供了将掺杂剂选择性地扩散到衬底晶片中的方法。液体前体掺杂有掺杂剂。液体前体选自硅和氢的单体，聚合物和低聚物的组。掺杂的液体前体沉积在衬底晶片的表面上以产生掺杂的膜。掺杂的膜在衬底晶片上被加热，用于以掺杂的薄膜将掺杂剂以不同的扩散速率扩散到衬底晶片中，以在衬底晶片中产生高度扩散的区域和轻度扩散的区域。本文公开的方法还包括在衬底晶片的表面上选择性固化掺杂膜。选择性固化的掺杂膜充当用于选择性地将掺杂剂扩散到衬底晶片中的扩散源。

6. 发明授权

US08669169B2 Diffusion sources from liquid precursors 有权
标题翻译：来自液体前体的扩散源
公开(公告)号：US08669169B2
公开(公告)日：2014-03-11
申请号：US12873320
申请日：2010-09-01
申请人： Daniel Inns
发明人： Daniel Inns
IPC分类号： H01L21/265
CPC分类号： H01L21/228 , H01L21/2225 , H01L21/2255 , H01L31/068 , H01L31/1804 , Y02E10/547
摘要： Methods for selectively diffusing dopants into a substrate wafer are provided. A liquid precursor is doped with dopants. The liquid precursor is selected from a group comprising monomers, polymers, and oligomers of silicon and hydrogen. The doped liquid precursor is deposited on a surface of the substrate wafer to create a doped film. The doped film is heated on the substrate wafer for diffusing the dopants from the doped film into the substrate wafer at different diffusion rates to create a heavily diffused region and a lightly diffused region in the substrate wafer. The method disclosed herein further comprises selective curing of the doped film on the surface of the substrate wafer. The selectively cured doped film acts as a diffusion source for selectively diffusing the dopants into the substrate wafer.
摘要翻译：提供了将掺杂剂选择性地扩散到衬底晶片中的方法。液体前体掺杂有掺杂剂。液体前体选自硅和氢的单体，聚合物和低聚物的组。掺杂的液体前体沉积在衬底晶片的表面上以产生掺杂的膜。掺杂的膜在衬底晶片上被加热，用于以掺杂的薄膜将掺杂剂以不同的扩散速率扩散到衬底晶片中，以在衬底晶片中产生高度扩散的区域和轻微扩散的区域。本文公开的方法还包括在衬底晶片的表面上选择性固化掺杂膜。选择性固化的掺杂膜充当用于选择性地将掺杂剂扩散到衬底晶片中的扩散源。

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