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1. 发明申请

US20080095936A1 FILM FORMING SYSTEM AND METHOD FOR FORMING FILM 审中-公开
标题翻译：电影制作系统及其制作方法
公开(公告)号：US20080095936A1
公开(公告)日：2008-04-24
申请号：US11771908
申请日：2007-06-29
申请人： Jiro Senda , Motohiro Oshima , Tetsuo Shimizu , Koji Tominaga , Koichiro Matsuda , Yutaka Yamagishi
发明人： Jiro Senda , Motohiro Oshima , Tetsuo Shimizu , Koji Tominaga , Koichiro Matsuda , Yutaka Yamagishi
IPC分类号： C23C16/455 , C23C16/52
CPC分类号： C23C16/4486 , C23C16/45523
摘要： An obstruct of this invention is to downsize a chamber, consequently a film forming system, to improve a film thickness distribution and to improve throughput of film forming by increasing the amount of the vaporized liquid precursor. The film forming system 1 is to form a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate W, and comprises a chamber 2 inside of which the substrate W is held and multiple injection valves 3 that are arranged at different positions in the chamber 2 and that directly inject the identical liquid precursor in the chamber 2, vaporize the identical liquid precursor by flash boiling and then supply the vaporized liquid precursor.
摘要翻译：本发明的阻碍是通过增加蒸发的液体前体的量来减小室的尺寸，从而缩小成膜系统以改善膜厚度分布并提高成膜的生产量。成膜系统1是通过蒸发液体前体而形成膜，然后将蒸发的液体前体沉积在基板W上，并且包括在其内保持基板W的腔室2和布置在不同的多个喷射阀3 在腔室2中的位置，并且将相同的液体前体直接注入到腔室2中，通过闪蒸来蒸发相同的液体前体，然后供应蒸发的液体前体。

2. 发明申请

US20090092741A1 METHOD FOR FORMING FILM AND FILM FORMING SYSTEM 审中-公开
标题翻译：形成薄膜和薄膜成型系统的方法
公开(公告)号：US20090092741A1
公开(公告)日：2009-04-09
申请号：US11908650
申请日：2006-03-13
申请人： Kozo Ishida , Koji Tominaga , Koichiro Matsuda , Tetsuo Shimizu , Jiro Senda , Motohiro Oshima , Akiko Komeda
发明人： Kozo Ishida , Koji Tominaga , Koichiro Matsuda , Tetsuo Shimizu , Jiro Senda , Motohiro Oshima , Akiko Komeda
IPC分类号： B05D1/02 , B05C5/00
CPC分类号： H01L21/31608 , C23C14/3428 , C23C16/402 , C23C16/4485 , C23C16/45523 , H01L21/02164 , H01L21/02183 , H01L21/02214 , H01L21/02271 , H01L21/31637
摘要： The present claimed invention is a film forming system 1 that forms a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate 2, and comprises a chamber 3 inside of which the substrate 2 is held, an injection valve 4 that directly injects the liquid precursor into the chamber 3, and a control unit 11 that alternately sets a supplying period while the liquid precursor is directly injected into the chamber 3 to supply the liquid precursor in a vaporized state and a supply halt period while the liquid precursor is not supplied into the chamber 3 and controls the supplying period and the supply halt period by periodically opening and closing the injection valve 4 so as to intermittently supply the liquid precursor into the chamber 3, and is characterized by that the control unit 11 controls the supply halt period to be equal to or longer than a migration/evaporation period necessary for atoms or molecules of the liquid precursor deposited on the substrate 2 to migrate and necessary for a reaction by-product material generated on the substrate 2 to evaporate. An object of this invention is to generate a thin film of high grade having less impure substances.
摘要翻译：本发明是一种成膜系统1，其通过蒸发液体前体形成膜，然后将蒸发的液体前体沉积在基板2上，并且包括在其内部保持有基板2的腔室3，喷射阀4 直接将液体前体注入到室3中，以及控制单元11，其将液体前体直接注入到室3中交替地设置供给周期，以将液体前体供给到蒸发状态和供给停止期间，同时液体前体不供给到室3中，并且通过周期性地打开和关闭喷射阀4来控制供给周期和供给停止时间，以间歇地将液体前体供给到室3中，并且其特征在于控制单元11控制供应停止时间等于或长于沉积在其上的液体前体原子或分子所需的迁移/蒸发时间衬底2迁移并且在衬底2上产生的反应副产物材料所必需的蒸发。本发明的目的是产生具有较少不纯物质的高级薄膜。

3. 发明申请

US20090297706A1 FILM FORMING SYSTEM AND METHOD FOR FORMING FILM 审中-公开
标题翻译：电影制作系统及其制作方法
公开(公告)号：US20090297706A1
公开(公告)日：2009-12-03
申请号：US11908437
申请日：2006-03-10
申请人： Jiro Senda , Motohiro Oshima , Kozo Ishida , Koji Tominaga
发明人： Jiro Senda , Motohiro Oshima , Kozo Ishida , Koji Tominaga
IPC分类号： C23C16/44
CPC分类号： H01L21/31637 , C23C16/4485 , C23C16/45557 , H01L21/02175 , H01L21/02183 , H01L21/02271 , H01L21/31604
摘要： An obstruct of this invention is to make it possible to form a metal-oxide film or a metal-nitride film having less oxygen deficit at a high deposition rate with improved repeatability and to downsize a film forming system as well.The film forming system in accordance with this invention comprises a chamber 3 inside of which a substrate 2 is held and an injection valve 4 that directly injects the liquid precursor into the chamber 3, wherein the liquid precursor is a mixed solution composed of a metallic compound and a low boiling point organic compound, and a pressure in the chamber 3 is made to be both larger than a vapor pressure of the metallic compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.
摘要翻译：本发明的阻碍是使得可以以高沉积速率形成具有较低氧缺陷的金属氧化物膜或金属氮化物膜，同时具有改进的重复性和小型化成膜体系。根据本发明的成膜系统包括在其内部保持有基底2的腔室3和将液体前体直接喷射到腔室3中的喷射阀4，其中液体前体是由金属化合物和低沸点有机化合物，并且使室3内的压力都大于在与低沸点有机化合物混合之前的金属化合物的蒸气压，并且小于混合溶液的蒸汽压。

4. 发明申请

US20050236675A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050236675A1
公开(公告)日：2005-10-27
申请号：US11114195
申请日：2005-04-26
申请人： Toshihide Nabatame , Akira Toriumi , Tsuyoshi Horikawa , Kunihiko Iwamoto , Koji Tominaga
发明人： Toshihide Nabatame , Akira Toriumi , Tsuyoshi Horikawa , Kunihiko Iwamoto , Koji Tominaga
IPC分类号： H01L27/092 , H01L21/28 , H01L21/316 , H01L21/8238 , H01L29/51 , H01L29/76 , H01L29/78
CPC分类号： H01L29/517 , H01L21/28194 , H01L21/823857 , H01L29/513 , H01L29/7833
摘要： To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.
摘要翻译：为了提供能够抑制MISFET的栅极绝缘膜的缺陷密度的半导体器件，获得足够的电特性，并使栅极绝缘膜的等效氧化物厚度（EOT）为1.0nm以下。 MISFET形成为具有形成在硅衬底的主表面上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜包括由金属氧化物层形成的金属硅酸盐层和硅氧化物层和金属硅酸盐层形成为具有从硅衬底侧到栅电极侧的金属和硅的浓度梯度。

5. 发明授权

US06930053B2 Method of forming grating microstructures by anodic oxidation 失效
标题翻译：通过阳极氧化形成光栅微结构的方法
公开(公告)号：US06930053B2
公开(公告)日：2005-08-16
申请号：US10394033
申请日：2003-03-24
申请人： Kazushi Mori , Mitsuaki Matsumoto , Koji Tominaga , Atsushi Tajiri , Koutarou Furusawa
发明人： Kazushi Mori , Mitsuaki Matsumoto , Koji Tominaga , Atsushi Tajiri , Koutarou Furusawa
IPC分类号： G02B5/18 , H01L21/302 , H01L21/461
CPC分类号： G02B5/1809 , G02B5/1857
摘要： A method of manufacturing an element having a microstructure of an excellent grating groove pattern or the like is obtained. This method of manufacturing an element having a microstructure comprises steps of forming a metal layer on a substrate, forming a dot column of concave portions on the surface of the metal layer and anodically oxidizing the surface of the metal layer formed with the dot column of concave portions while opposing this surface to a cathode surface thereby forming a metal oxide film having a grating groove pattern. When the interval between the concave portions of the dot column is reduced, therefore, a linear grating groove pattern having a large depth with a uniform groove width along the depth direction is easily formed in a self-organized manner.
摘要翻译：可以得到具有优良的光栅槽图案等的微结构的元件的制造方法。这种制造具有微结构的元件的方法包括以下步骤：在衬底上形成金属层，在金属层的表面上形成凹点的点列，并且阳极氧化形成有凹点的点列的金属层的表面同时将该表面与阴极表面相对，从而形成具有格栅槽图案的金属氧化物膜。当点列的凹部之间的间隔减小时，容易以自组织的方式形成具有沿深度方向具有均匀凹槽宽度的大深度的线性格栅槽图案。

6. 发明授权

US07910507B2 Glass ceramic material for plasma display 失效
标题翻译：用于等离子体显示的玻璃陶瓷材料
公开(公告)号：US07910507B2
公开(公告)日：2011-03-22
申请号：US12520374
申请日：2007-12-20
申请人： Kazuhiro Nishikawa , Koji Tominaga
发明人： Kazuhiro Nishikawa , Koji Tominaga
IPC分类号： C03C8/22 , C03C4/04
CPC分类号： H01J11/34 , C03C8/22 , C03C8/24 , H01J5/04
摘要： There is provided a glass ceramic material for plasma display, in which glass fine grains (A) having a softening point of 570-640° C. are in 40-70 wt %, and glass fine grains (B) having a softening point of 480-540° C. are in 30-60 wt %, the glass ceramic material for plasma display being characterized in that the glass fine grains (A) comprise 2-12 wt % of SiO2, 50-58 wt % of B2O3, 10-20 wt % of Al2O3, 0-6 wt % of ZnO, 0-2.8 wt % of Li2O, and 10-22 wt % of at least one selected from MgO, CaO, SrO and BaO and that refractive index of the glass fine grains (A) is 1.53-1.56.
摘要翻译：提供了一种用于等离子显示器的玻璃陶瓷材料，其中软化点为570-640℃的玻璃细晶粒（A）为40-70重量％，玻璃细晶粒（B）的软化点为 480-540℃为30-60重量％，用于等离子体显示的玻璃陶瓷材料的特征在于，玻璃细晶粒（A）包含2-12重量％的SiO 2，50-58重量％的B 2 O 3，10 -20重量％的Al 2 O 3，0-6重量％的ZnO，0-2.8重量％的Li 2 O和10-22重量％的选自MgO，CaO，SrO和BaO中的至少一种，并且玻璃的折射率精细颗粒（A）为1.53-1.56。

7. 发明申请

US20110015053A1 Lead-Free Low-Melting-Point Glass Composition Having Acid Resistance 审中-公开
标题翻译：具有耐酸性的无铅低熔点玻璃组合物
公开(公告)号：US20110015053A1
公开(公告)日：2011-01-20
申请号：US12921701
申请日：2009-03-04
申请人： Jun Hamada , Koji Tominaga , Naoya Hayakawa
发明人： Jun Hamada , Koji Tominaga , Naoya Hayakawa
IPC分类号： C03C3/064 , C03C3/066 , C03C14/00
CPC分类号： H01J29/86 , C03C3/064 , C03C3/066 , C03C8/02 , C03C8/04 , C03C8/16 , C03C17/04 , H01J11/10 , H01J11/34 , H01J29/863
摘要： A lead-free low-melting-point glass having an acid resistance, being substantially free of PbO and including 12 to 35 mass % of SiO2, 3 to 20 mass % of B2O3, 35 to 75 mass % of Bi2O3, and 0 to 8 mass % of at least one material selected from the group consisting of Li2O, Na2O and K2O is provided. A lead-free low-melting-point glass composition including a powder of the glass and a filler made of a ceramic powder is also provided.
摘要翻译：具有耐酸性的无铅低熔点玻璃，其基本上不含PbO，包含12〜35质量％的SiO 2，3〜20质量％的B 2 O 3，35〜75质量％的Bi 2 O 3，0〜8 提供了选自由Li 2 O，Na 2 O和K 2 O组成的组中的至少一种材料的质量％。还提供了包含玻璃粉末和由陶瓷粉末制成的填料的无铅低熔点玻璃组合物。

8. 发明授权

US07772678B2 Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen 有权
标题翻译：含有高k电介质金属，氮和氧的金属化合物薄膜
公开(公告)号：US07772678B2
公开(公告)日：2010-08-10
申请号：US12333577
申请日：2008-12-12
申请人： Kunihiko Iwamoto , Koji Tominaga , Toshihide Nabatame , Tomoaki Nishimura
发明人： Kunihiko Iwamoto , Koji Tominaga , Toshihide Nabatame , Tomoaki Nishimura
IPC分类号： H01L23/58 , H01L29/78
CPC分类号： H01L29/66575 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
摘要翻译：在清洁基板的表面之后，形成界面层或反扩散膜。在抗扩散膜上构建金属氧化物膜。在NH 3气氛中进行退火，以便在金属氧化物膜中扩散氮。金属氧化物膜的构建和氮的扩散重复几次，随后在O 2气氛中进行退火。通过在高于650℃的温度下在O 2气氛中退火该膜，可以控制金属氧化物膜中的漏电流。

9. 发明申请

US20080026148A1 Film Forming System And Method For Forming Film 审中-公开
标题翻译：成膜系统及成膜方法
公开(公告)号：US20080026148A1
公开(公告)日：2008-01-31
申请号：US10585267
申请日：2004-12-22
申请人： Koji Tominaga , Tetsuji Yasuda , Toshihide Nabatame , Kunihiko Iwamoto
发明人： Koji Tominaga , Tetsuji Yasuda , Toshihide Nabatame , Kunihiko Iwamoto
IPC分类号： C23C16/00
CPC分类号： C23C16/45527 , C23C16/45531 , C23C16/45544
摘要： A throughput during a process of forming a thin film is improved and a thin film of high quality is produced at low cost.For this purpose, a film forming system comprises a chamber 8, a precursory gas supplying line 2 to supply the chamber 8 with precursory gas, a reactive gas supplying line 1 to supply the chamber 8 with reactive gas, and a purge gas supplying line 3 to supply purge gas that purges the precursory gas and the reactive gas, and forms a thin film on a substrate 82 in the chamber 8 by supplying the precursory gas or the reactive gas and purging alternately, and further comprises a middle line 22 having a certain volume that is arranged on a part or all of the precursor supplying line 2 and into which the precursory gas can be filled at a time when the precursory gas is not supplied, and/or a middle line 12 having a certain volume that is arranged on a part or all of the reactive gas supplying line 1 and into which the reactive gas can be filled at a time when the reactive gas is not supplied.
摘要翻译：在形成薄膜的过程中的生产量得到改善，并且以低成本生产高质量的薄膜。为此，成膜系统包括：腔室8，为腔室8提供前兆气体的前体气体供应管线2;向反应气体供应腔室8的反应气体供应管线1;以及吹扫气体供应管线3 以提供吹扫前体气体和反应性气体的吹扫气体，并且通过供应前体气体或反应性气体并交替进行吹扫而在室8中的基板82上形成薄膜，并且还包括具有一定的中间线22的中间线22 配置在前体供给管线2的一部分或全部的体积，并且在不供给前体气体的时候可以填充前体气体的体积，和/或具有一定体积的中间线12 反应气体供应管线1的一部分或全部，并且在不供应反应气体的时候可以填充反应气体。

10. 发明授权

US07129183B2 Method of forming grating microstrutures by anodic oxidation 失效
标题翻译：通过阳极氧化形成光栅微尺寸的方法
公开(公告)号：US07129183B2
公开(公告)日：2006-10-31
申请号：US11155480
申请日：2005-06-20
申请人： Kazushi Mori , Mitsuaki Matsumoto , Koji Tominaga , Atsushi Tajiri , Koutarou Furusawa
发明人： Kazushi Mori , Mitsuaki Matsumoto , Koji Tominaga , Atsushi Tajiri , Koutarou Furusawa
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G02B5/1809 , G02B5/1857
摘要： A method of manufacturing an element having a microstructure of an excellent grating groove pattern or the like is obtained. This method of manufacturing an element having a microstructure comprises steps of forming a metal layer on a substrate, forming a dot column of concave portions on the surface of the metal layer and anodically oxidizing the surface of the metal layer formed with the dot column of concave portions while opposing this surface to a cathode surface thereby forming a metal oxide film having a grating groove pattern. When the interval between the concave portions of the dot column is reduced, therefore, a linear grating groove pattern having a large depth with a uniform groove width along the depth direction is easily formed in a self-organized manner.
摘要翻译：可以得到具有优良的光栅槽图案等的微结构的元件的制造方法。这种制造具有微结构的元件的方法包括以下步骤：在衬底上形成金属层，在金属层的表面上形成凹点的点列，并且阳极氧化形成有凹点的点列的金属层的表面同时将该表面与阴极表面相对，从而形成具有格栅槽图案的金属氧化物膜。当点列的凹部之间的间隔减小时，容易以自组织的方式形成具有沿深度方向具有均匀凹槽宽度的大深度的线性格栅槽图案。

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