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    • 5. 发明申请
    • Film Forming System And Method For Forming Film
    • 成膜系统及成膜方法
    • US20080026148A1
    • 2008-01-31
    • US10585267
    • 2004-12-22
    • Koji TominagaTetsuji YasudaToshihide NabatameKunihiko Iwamoto
    • Koji TominagaTetsuji YasudaToshihide NabatameKunihiko Iwamoto
    • C23C16/00
    • C23C16/45527C23C16/45531C23C16/45544
    • A throughput during a process of forming a thin film is improved and a thin film of high quality is produced at low cost.For this purpose, a film forming system comprises a chamber 8, a precursory gas supplying line 2 to supply the chamber 8 with precursory gas, a reactive gas supplying line 1 to supply the chamber 8 with reactive gas, and a purge gas supplying line 3 to supply purge gas that purges the precursory gas and the reactive gas, and forms a thin film on a substrate 82 in the chamber 8 by supplying the precursory gas or the reactive gas and purging alternately, and further comprises a middle line 22 having a certain volume that is arranged on a part or all of the precursor supplying line 2 and into which the precursory gas can be filled at a time when the precursory gas is not supplied, and/or a middle line 12 having a certain volume that is arranged on a part or all of the reactive gas supplying line 1 and into which the reactive gas can be filled at a time when the reactive gas is not supplied.
    • 在形成薄膜的过程中的生产量得到改善,并且以低成本生产高质量的薄膜。 为此,成膜系统包括:腔室8,为腔室8提供前兆气体的前体气体供应管线2;向反应气体供应腔室8的反应气体供应管线1;以及吹扫气体供应管线3 以提供吹扫前体气体和反应性气体的吹扫气体,并且通过供应前体气体或反应性气体并交替进行吹扫而在室8中的基板82上形成薄膜,并且还包括具有一定的中间线22的中间线22 配置在前体供给管线2的一部分或全部的体积,并且在不供给前体气体的时候可以填充前体气体的体积,和/或具有一定体积的中间线12 反应气体供应管线1的一部分或全部,并且在不供应反应气体的时候可以填充反应气体。