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1. 发明申请

US20050236675A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050236675A1
公开(公告)日：2005-10-27
申请号：US11114195
申请日：2005-04-26
申请人： Toshihide Nabatame , Akira Toriumi , Tsuyoshi Horikawa , Kunihiko Iwamoto , Koji Tominaga
发明人： Toshihide Nabatame , Akira Toriumi , Tsuyoshi Horikawa , Kunihiko Iwamoto , Koji Tominaga
IPC分类号： H01L27/092 , H01L21/28 , H01L21/316 , H01L21/8238 , H01L29/51 , H01L29/76 , H01L29/78
CPC分类号： H01L29/517 , H01L21/28194 , H01L21/823857 , H01L29/513 , H01L29/7833
摘要： To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.
摘要翻译：为了提供能够抑制MISFET的栅极绝缘膜的缺陷密度的半导体器件，获得足够的电特性，并使栅极绝缘膜的等效氧化物厚度（EOT）为1.0nm以下。 MISFET形成为具有形成在硅衬底的主表面上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜包括由金属氧化物层形成的金属硅酸盐层和硅氧化物层和金属硅酸盐层形成为具有从硅衬底侧到栅电极侧的金属和硅的浓度梯度。

2. 发明授权

US07397094B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07397094B2
公开(公告)日：2008-07-08
申请号：US11114195
申请日：2005-04-26
申请人： Toshihide Nabatame , Akira Toriumi , Tsuyoshi Horikawa , Kunihiko Iwamoto , Koji Tominaga
发明人： Toshihide Nabatame , Akira Toriumi , Tsuyoshi Horikawa , Kunihiko Iwamoto , Koji Tominaga
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/517 , H01L21/28194 , H01L21/823857 , H01L29/513 , H01L29/7833
摘要： To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.
摘要翻译：为了提供能够抑制MISFET的栅极绝缘膜的缺陷密度的半导体器件，获得足够的电特性，并使栅极绝缘膜的等效氧化物厚度（EOT）为1.0nm以下。 MISFET形成为具有形成在硅衬底的主表面上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜包括由金属氧化物层形成的金属硅酸盐层和硅氧化物层和金属硅酸盐层形成为具有从硅衬底侧到栅电极侧的金属和硅的浓度梯度。

3. 发明授权

US06563182B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US06563182B2
公开(公告)日：2003-05-13
申请号：US09954021
申请日：2001-09-18
申请人： Tsuyoshi Horikawa
发明人： Tsuyoshi Horikawa
IPC分类号： H01L31119
CPC分类号： H01L21/28194 , H01L21/28202 , H01L21/823857 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/518
摘要： Second insulating films of gate insulating films each are composed of a high-permittivity dielectric film having a relative dielectric constant of 8 or more and at least one of the high-permittivity dielectric films constituting the second insulating films is doped with at least one kind of impurity metal ions. The valence number of the impurity metal ions differs by 1 from that of metal ions constituting the high-permittivity dielectric films. Due to this doping, at least one of the density and polarity of charged defects in the high-permittivity dielectric films differs between the second insulating films. The threshold voltage of each MISFET is controlled independently.

4. 发明授权

US6110283A Chemical vapor deposition apparatus 失效
标题翻译：化学气相沉积装置
公开(公告)号：US6110283A
公开(公告)日：2000-08-29
申请号：US912938
申请日：1997-08-15
申请人： Mikio Yamamuka , Takaaki Kawahara , Masayoshi Tarutani , Tsuyoshi Horikawa
发明人： Mikio Yamamuka , Takaaki Kawahara , Masayoshi Tarutani , Tsuyoshi Horikawa
IPC分类号： C23C16/40 , C23C16/44 , C23C16/448 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4481 , C23C16/448
摘要： A chemical vapor deposition apparatus to reduce generation of contaminants such as residues within the apparatus can be obtained. The chemical vapor deposition apparatus includes a CVD source container, a vaporizer and reaction unit. The vaporizer has a nozzle attached thereto. The nozzle has a tip portion and a thick portion. The reaction unit includes a mixing unit. The mixing unit includes an oxidizer supply pipe as well as a heating portion having a helical side groove and heating means. Reaction unit further includes a reaction chamber surrounded by a wall surface. The inside of the wall surface is covered with an inactive cover layer, and the wall surface is heated to a temperature range of 300-500.degree. C.
摘要翻译：可以获得化学气相沉积装置，以减少装置内残留物等杂质的产生。化学气相沉积装置包括CVD源容器，蒸发器和反应单元。蒸发器具有附接到其上的喷嘴。喷嘴具有尖端部分和较厚部分。反应单元包括混合单元。混合单元包括氧化剂供应管以及具有螺旋侧槽和加热装置的加热部分。反应单元还包括由壁表面包围的反应室。壁面内侧覆盖有不活泼的覆盖层，壁面被加热至300-500℃的温度范围。

5. 发明授权

US5281806A Optical writing type liquid crystal light valve and writing apparatus therefor 失效
标题翻译：光写字型液晶光阀及其书写装置
公开(公告)号：US5281806A
公开(公告)日：1994-01-25
申请号：US50673
申请日：1993-04-22
申请人： Kazuro Nishi , Hajime Nakajima , Masaya Mizunuma , Tatsuo Masumi , Shigeyuki Kaho , Tsuyoshi Horikawa , Shin Tahata
发明人： Kazuro Nishi , Hajime Nakajima , Masaya Mizunuma , Tatsuo Masumi , Shigeyuki Kaho , Tsuyoshi Horikawa , Shin Tahata
IPC分类号： G02F1/135 , G09G3/02 , H04N5/74 , H01J40/14
CPC分类号： G02F1/135 , G02F1/1354 , G09G3/02 , H04N5/7441 , G09G2310/061 , G09G2360/141 , G09G3/36
摘要： A liquid crystal light valve has a photoconductive layer between a pair of electrodes, and a liquid crystal layer. The resistivity of the photoconductive layer at the portion which is irradiated with light is reduced by partial light irradiation. By applying a voltage between the electrodes in this state, the voltage is applied to the liquid crystal layer in the portion which is irradiated with light and the crystalline structure at this portion is changed, thereby enabling image data writing. The photoconductive layer is a laminate of an amorphous Si film and an inorganic insulating film disposed on the electrode side, which structure suppresses the carrier injection from the electrode to the amorphous Si film. The polarity of a voltage for writing image data into the liquid crystal light valve is inverted for every horizontal scanning operation. That is, writing of black portions on a white background and writing of white portions on a black background are alternately executed. It is therefore possible to write data on one line and erase the data on the next line by a voltage of one polarity. By periodically setting a period in which no voltage is applied during writing, writing error caused by stored charges is prevented.
摘要翻译：液晶光阀在一对电极和液晶层之间具有光电导层。通过部分光照射，光照射部分的光电导层的电阻率降低。通过在这种状态下在电极之间施加电压，将电压施加到被照射的部分中的液晶层，并且该部分的晶体结构发生变化，从而使图像数据写入。光电导层是设置在电极侧的非晶Si膜和无机绝缘膜的层叠体，该结构抑制从电极向非晶Si膜的载流子注入。对于每次水平扫描操作，将图像数据写入液晶光阀的电压的极性反转。也就是说，交替地执行在白色背景上写入黑色部分并在黑色背景上写入白色部分。因此，可以在一行上写入数据，并通过一个极性的电压擦除下一行的数据。通过周期性地设定在写入期间不施加电压的周期，防止由存储的电荷引起的写入错误。

6. 发明授权

US06638880B2 Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device 失效
公开(公告)号：US06638880B2
公开(公告)日：2003-10-28
申请号：US09981824
申请日：2001-10-19
申请人： Mikio Yamamuka , Takaaki Kawahara , Masayoshi Tarutani , Tsuyoshi Horikawa , Shigeru Matsuno , Takehiko Sato
发明人： Mikio Yamamuka , Takaaki Kawahara , Masayoshi Tarutani , Tsuyoshi Horikawa , Shigeru Matsuno , Takehiko Sato
IPC分类号： H01L2100
CPC分类号： C23C16/45502 , C23C16/4401 , C23C16/4412 , C23C16/45519 , C23C16/45561 , C23C16/4557 , C23C16/45589 , H01L21/31691
摘要： In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

7. 发明授权

US06448191B2 Method of forming high dielectric constant thin film and method of manufacturing semiconductor device 失效
标题翻译：形成高介电常数薄膜的方法和制造半导体器件的方法
公开(公告)号：US06448191B2
公开(公告)日：2002-09-10
申请号：US09832928
申请日：2001-04-12
申请人： Takaaki Kawahara , Mikio Yamamuka , Tsuyoshi Horikawa , Masayoshi Tarutani , Takehiko Sato , Shigeru Matsuno
发明人： Takaaki Kawahara , Mikio Yamamuka , Tsuyoshi Horikawa , Masayoshi Tarutani , Takehiko Sato , Shigeru Matsuno
IPC分类号： H01L2131
CPC分类号： H01L21/31691 , C23C16/409 , H01L28/55
摘要： A method of forming a (Ba, Sr) TiO3 high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO3 thin film is formed on a substrate by CVD reaction using the material gas.
摘要翻译：提供了形成具有足够覆盖面的（Ba，Sr）TiO 3高介电常数薄膜的方法。将Ba材料，Sr材料和包含双（叔丁氧基）双（二戊酰甲烷甲酸酯）钛的Ti材料溶解在有机溶剂中以获得溶液材料。使溶液气化，得到原料气体。通过使用原料气体的CVD反应在基板上形成（Ba，Sr）TiO 3薄膜。

8. 发明授权

US06239460B1 Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium 失效
公开(公告)号：US06239460B1
公开(公告)日：2001-05-29
申请号：US08671632
申请日：1996-06-28
申请人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
发明人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
IPC分类号： H01L27108
CPC分类号： H01L28/60 , H01L27/10852 , H01L28/55
摘要： A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.

9. 发明授权

US5939744A Semiconductor device with x-ray absorption layer 失效
标题翻译：具有x射线吸收层的半导体器件
公开(公告)号：US5939744A
公开(公告)日：1999-08-17
申请号：US953559
申请日：1997-10-17
申请人： Tsuyoshi Horikawa , Yoshikazu Tsunemine , Takeharu Kuroiwa , Tetsuro Makita , Noboru Mikami
发明人： Tsuyoshi Horikawa , Yoshikazu Tsunemine , Takeharu Kuroiwa , Tetsuro Makita , Noboru Mikami
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1085 , H01L28/55
摘要： In a thin film capacitor of a random access memory including a lower electrode, a dielectric film and an upper electrode, generation of defects in the dielectric film is suppressed. In another way, impurity diffusion into the dielectric film is prevented. In still another way, lattice matching of the dielectric film and the electrodes is realized. Thus, a reduced dielectric constant of the capacitor is prevented, and a quality of the semiconductor device is increased.
摘要翻译：在包括下电极，电介质膜和上电极的随机存取存储器的薄膜电容器中，抑制了电介质膜中缺陷的产生。换句话说，阻止了杂质向电介质膜的扩散。另一方面，实现了电介质膜和电极的晶格匹配。因此，防止了电容器的介电常数降低，并且提高了半导体器件的质量。

10. 发明授权

US5882410A High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film 失效
公开(公告)号：US5882410A
公开(公告)日：1999-03-16
申请号：US115991
申请日：1998-07-15
申请人： Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
发明人： Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
IPC分类号： C23C16/40 , C23C16/448 , C23C16/52 , H01L21/02 , H01L21/314 , C23C16/00
CPC分类号： H01L28/56 , C23C16/409 , C23C16/4481 , C23C16/4485 , C23C16/52 , H01L21/02197 , H01L21/022 , H01L21/02271
摘要： There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

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