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1. 发明申请

US20060088950A1 Fabrication method of multi-wavelength semiconductor laser device 有权
标题翻译：多波长半导体激光器件的制作方法
公开(公告)号：US20060088950A1
公开(公告)日：2006-04-27
申请号：US11247935
申请日：2005-10-11
申请人： Jin Kim , Su Lee , Chang Kim , Sang Han , Keun Song , Tae Kim , Seok Choi
发明人： Jin Kim , Su Lee , Chang Kim , Sang Han , Keun Song , Tae Kim , Seok Choi
IPC分类号： H01L21/36
CPC分类号： H01S5/4031 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S5/4087 , H01S2304/04
摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
摘要翻译：本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。然后，形成基板上的第一电介质掩模，仅露出第一区域。然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。然后，形成基板上的第二电介质掩模，仅露出第二区域。然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。

2. 发明申请

US20060194356A1 Method for manufacturing multi-wavelength semiconductor laser device 审中-公开
标题翻译：制造多波长半导体激光器件的方法
公开(公告)号：US20060194356A1
公开(公告)日：2006-08-31
申请号：US11238319
申请日：2005-09-29
申请人： Keun Song , Su Lee , Jin Kim , Tae Kim , Chang Kim , Sang Han
发明人： Keun Song , Su Lee , Jin Kim , Tae Kim , Chang Kim , Sang Han
IPC分类号： H01L21/00
CPC分类号： H01S5/4031 , H01S5/209 , H01S5/32316 , H01S5/32325 , H01S5/4087
摘要： The present invention provides a method for forming a multi-wavelength semiconductor laser device. The method comprises sequentially forming an AlGaAs-based epitaxial layer for a first semiconductor laser diode and an etching stop layer composed of AlxGayIn(1-x-y)P (0≦x≦1, 0≦y≦1) on a substrate and sequentially growing an n-type GaAs flattening buffer layer and an AlGaInP-based epitaxial layer for a second semiconductor laser diode on the substrate, after selectively removing the AlGaAs-based epitaxial layer and the etching stop layer.
摘要翻译：本发明提供一种形成多波长半导体激光器件的方法。该方法包括顺序形成用于第一半导体激光二极管的AlGaAs基外延层和由AlxGayIn（1-xy）P（0≤x≤1,0<= y <= 1）组成的蚀刻停止层）在选择性地除去基于AlGaAs的外延层和蚀刻停止层之后，在衬底上顺序生长n型GaAs平坦化缓冲层和用于第二半导体激光二极管的AlGaInP基外延层。

3. 发明申请

US20070114564A1 Vertical gallium nitride based light emitting diode 失效
标题翻译：立式氮化镓基发光二极管
公开(公告)号：US20070114564A1
公开(公告)日：2007-05-24
申请号：US11602285
申请日：2006-11-21
申请人： Su Lee , Dong Kim , Seok Choi , Tae Kim
发明人： Su Lee , Dong Kim , Seok Choi , Tae Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38
摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
摘要翻译：垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。

4. 发明申请

US20070018187A1 Vertical GaN-based LED and method of manfacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US20070018187A1
公开(公告)日：2007-01-25
申请号：US11490254
申请日：2006-07-21
申请人： Jae Lee , Bang Oh , Hee Choi , Jeong Oh , Seok Choi , Su Lee
发明人： Jae Lee , Bang Oh , Hee Choi , Jeong Oh , Seok Choi , Su Lee
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/22 , H01L33/14
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。第一n型GaN层具有具有多个突起的不均匀图案。第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。

5. 发明申请

US20070126022A1 Vertical gallium-nitride based light emitting diode and manufacturing of the same 有权
标题翻译：垂直氮化镓基发光二极管及其制造
公开(公告)号：US20070126022A1
公开(公告)日：2007-06-07
申请号：US11634112
申请日：2006-12-06
申请人： Doo Baik , Bang Oh , Seok Choi , Su Lee
发明人： Doo Baik , Bang Oh , Seok Choi , Su Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/02 , H01L33/32
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

6. 发明申请

US20070114552A1 Vertical gallium-nitride based light emitting diode 有权
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US20070114552A1
公开(公告)日：2007-05-24
申请号：US11581003
申请日：2006-10-16
申请人： Tae Jang , Su Lee , Seok Choi
发明人： Tae Jang , Su Lee , Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/385
摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
摘要翻译：垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。

7. 发明申请

US20070121312A1 Lighting device for display device used in vehicles 审中-公开
标题翻译：用于车辆的显示装置的照明装置
公开(公告)号：US20070121312A1
公开(公告)日：2007-05-31
申请号：US11602310
申请日：2006-11-21
申请人： Dong Kim , Bang Oh , Tae Kim , Su Lee
发明人： Dong Kim , Bang Oh , Tae Kim , Su Lee
IPC分类号： G01D11/28
CPC分类号： G01D11/28
摘要： The present invention relates to a lighting device for display device used in vehicles, the light device including an indicator provided with a rotating shaft; a graphic plate disposed under the indicator and having a through hole formed in the center thereof, into which the rotating shaft is inserted; and an LED section that is disposed under the graphic plate, generates light onto the graphic plate, and is provided with LED chips having different colors.
摘要翻译：本发明涉及一种用于车辆的显示装置的照明装置，该灯装置包括设有旋转轴的指示器; 布置在所述指示器下方并且在其中心形成有通孔的图形板，所述旋转轴插入所述通孔中; 以及布置在图形板下面的LED部分，在图形板上产生光，并且具有不同颜色的LED芯片。

8. 发明申请

US20070108467A1 Vertical GaN-based light emitting diode 审中-公开
标题翻译：垂直GaN基发光二极管
公开(公告)号：US20070108467A1
公开(公告)日：2007-05-17
申请号：US11599266
申请日：2006-11-15
申请人： Tae Jang , Su Lee , Pil Kang , Tae Kim
发明人： Tae Jang , Su Lee , Pil Kang , Tae Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/22
摘要： A vertical GaN-based LED is provided. The vertical GaN-based LED includes an n-type bonding pad, an n-type reflective electrode formed under the n-type bonding pad, an n-type transparent electrode formed under the n-type reflective electrode, an n-type GaN layer formed under the n-type transparent electrode, an active layer formed under the n-type GaN layer, a p-type GaN layer formed under the active layer, a p-electrode formed under the p-type GaN layer and having an uneven profile at a surface which does not come in contact with the p-type GaN layer, a p-type reflective electrode formed along the uneven surface of the p-type electrode, and a support layer formed under the p-type reflective electrode.
摘要翻译：提供垂直的GaN基LED。垂直GaN基LED包括n型接合焊盘，形成在n型接合焊盘下面的n型反射电极，形成在n型反射电极下方的n型透明电极，n型GaN层形成在n型透明电极下面，形成在n型GaN层下面的有源层，在有源层下面形成的p型GaN层，在p型GaN层下面形成的具有不平坦轮廓的p电极在不与p型GaN层接触的表面上形成有沿p型电极的不平坦表面形成的p型反射电极和在p型反射电极下形成的支撑层。

9. 发明申请

US20070021511A1 Composition comprising phytosphingosine or a derivative thereof 审中-公开
标题翻译：包含植物鞘氨醇或其衍生物的组合物
公开(公告)号：US20070021511A1
公开(公告)日：2007-01-25
申请号：US10548310
申请日：2003-03-07
申请人： Su Lee , Yun Lee , Soo Kim , Kyung Kim , Chul Cho , Chang Kang , Tae Kim , Sangwoo Bae , Moon Park , Jung Choi , Min Kim , Hee Chung , Sujong Kim , Seongman Kang , Weon Choi , Jung Kang
发明人： Su Lee , Yun Lee , Soo Kim , Kyung Kim , Chul Cho , Chang Kang , Tae Kim , Sangwoo Bae , Moon Park , Jung Choi , Min Kim , Hee Chung , Sujong Kim , Seongman Kang , Weon Choi , Jung Kang
IPC分类号： A61K31/16 , A61K31/13
CPC分类号： A61K31/164 , A61K31/133
摘要： Provided is a composition for cancer treatment including phytosphingosine or a derivative thereof, or a pharmaceutically acceptable salt thereof as an active ingredient.
摘要翻译：本发明提供包含植物鞘氨醇或其衍生物或其药学上可接受的盐作为活性成分的癌症治疗用组合物。

10. 发明申请

US20080241982A1 Vertical GaN-based LED and method of manufacturing the same 有权
公开(公告)号：US20080241982A1
公开(公告)日：2008-10-02
申请号：US11878503
申请日：2007-07-25
申请人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
发明人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

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