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1. 发明授权

US07635654B2 Magnetic tunnel junction device with improved barrier layer 有权
标题翻译：具有改善阻挡层的磁隧道结器件
公开(公告)号：US07635654B2
公开(公告)日：2009-12-22
申请号：US11341986
申请日：2006-01-27
申请人： JiJun Sun , John T. Martin , Jon M. Slaughter
发明人： JiJun Sun , John T. Martin , Jon M. Slaughter
IPC分类号： H01L21/316 , H01L27/115
CPC分类号： H01L43/08 , H01L43/12
摘要： Methods and apparatus are provided for magnetic tunnel junction (MTJ) devices and arrays, comprising metal-insulator-metal (M-I-M) structures with opposed first and second ferro-magnetic electrodes with alterable relative magnetization direction. The insulator is formed by depositing an oxidizable material (e.g., Al) on the first electrode, naturally oxidizing it, e.g., at about 0.03 to 10 milli-Torr for up to a few thousand seconds at temperatures below about 35° C., then further rapidly (e.g., plasma) oxidizing at a rate much larger than that of the initial natural oxidation. The second electrode of the M-I-M structure is formed on this oxide. More uniform tunneling properties result. A second oxidizable material layer is optionally provided after the initial natural oxidation and before the rapid oxidation step during which it is substantially entirely converted to insulating oxide. A second natural oxidation cycle may be optionally provided before the second layer is rapidly oxidized.
摘要翻译：提供了用于磁性隧道结（MTJ）器件和阵列的方法和装置，其包括金属 - 绝缘体 - 金属（M-I-M）结构，具有相对的具有可变相对磁化方向的第一和第二铁磁电极。绝缘体通过在第一电极上沉积可氧化材料（例如，Al）而形成，其自然氧化，例如在低于约35℃的温度下在约0.03至10毫乇达数千秒，然后进一步快速（例如，等离子体）以比初始自然氧化的速率更大的速率氧化。在该氧化物上形成M-I-M结构的第二电极。导致更均匀的隧道性质。任选地，在初始自然氧化之后和快速氧化步骤之间提供第二可氧化材料层，在该氧化步骤期间，其基本上完全转化为绝缘氧化物。可以任选地在第二层被快速氧化之前提供第二自然氧化循环。

2. 发明授权

US07684161B2 Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence 有权
标题翻译：具有降低温度依赖性的合成反铁磁体结构的方法和装置
公开(公告)号：US07684161B2
公开(公告)日：2010-03-23
申请号：US11406566
申请日：2006-04-18
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , JiJun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , JiJun Sun
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.
摘要翻译：合成反铁磁体（SAF）结构包括第一铁磁层，第一插入层，耦合层，第二插入层和第二铁磁层。插入层包括选择的材料，使得SAF显示降低的反铁磁耦合强度的温度依赖性。插入层可以包括CoFe或CoFeX合金。选择插入层的厚度使得它们不增加单轴各向异性或劣化任何其它性质。

3. 发明授权

US07098495B2 Magnetic tunnel junction element structures and methods for fabricating the same 有权
公开(公告)号：US07098495B2
公开(公告)日：2006-08-29
申请号：US10899610
申请日：2004-07-26
申请人： JiJun Sun , Renu W. Dave , Jon M. Slaughter , Johan Akerman
发明人： JiJun Sun , Renu W. Dave , Jon M. Slaughter , Johan Akerman
IPC分类号： H01L29/76
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/12
摘要： Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer.Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.

4. 发明申请

US20070243639A1 Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence 有权
标题翻译：具有降低温度依赖性的合成反铁磁体结构的方法和装置
公开(公告)号：US20070243639A1
公开(公告)日：2007-10-18
申请号：US11406566
申请日：2006-04-18
申请人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , JiJun Sun
发明人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , JiJun Sun
IPC分类号： H01L21/00 , G11B5/33
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.
摘要翻译：合成反铁磁体（SAF）结构包括第一铁磁层，第一插入层，耦合层，第二插入层和第二铁磁层。插入层包括选择的材料，使得SAF显示降低的反铁磁耦合强度的温度依赖性。插入层可以包括CoFe或CoFeX合金。选择插入层的厚度使得它们不增加单轴各向异性或劣化任何其它性质。

5. 发明授权

US07329935B2 Low power magnetoresistive random access memory elements 有权
公开(公告)号：US07329935B2
公开(公告)日：2008-02-12
申请号：US11581951
申请日：2006-10-16
申请人： Nicholas D. Rizzo , Renu W. Dave , Bradley N. Engel , Jason A. Janesky , JiJun Sun
发明人： Nicholas D. Rizzo , Renu W. Dave , Bradley N. Engel , Jason A. Janesky , JiJun Sun
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−σsat)−(Hsw+σsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

6. 发明申请

US20070178608A1 Magnetic tunnel junction device with improved barrier layer 有权
标题翻译：具有改善阻挡层的磁隧道结器件
公开(公告)号：US20070178608A1
公开(公告)日：2007-08-02
申请号：US11341986
申请日：2006-01-27
申请人： JiJun Sun , John Martin , Jon Slaughter
发明人： JiJun Sun , John Martin , Jon Slaughter
IPC分类号： H01L21/473
CPC分类号： H01L43/08 , H01L43/12
摘要： Methods and apparatus are provided for magnetic tunnel junction (MTJ) devices and arrays, comprising metal-insulator-metal (M-I-M) structures with opposed first and second ferro-magnetic electrodes with alterable relative magnetization direction. The insulator is formed by depositing an oxidizable material (e.g., Al) on the first electrode, naturally oxidizing it, e.g., at about 0.03 to 10 milli-Torr for up to a few thousand seconds at temperatures below about 35° C., then further rapidly (e.g., plasma) oxidizing at a rate much larger than that of the initial natural oxidation. The second electrode of the M-I-M structure is formed on this oxide. More uniform tunneling properties result. A second oxidizable material layer is optionally provided after the initial natural oxidation and before the rapid oxidation step during which it is substantially entirely converted to insulating oxide. A second natural oxidation cycle may be optionally provided before the second layer is rapidly oxidized.
摘要翻译：提供了用于磁性隧道结（MTJ）器件和阵列的方法和装置，其包括金属 - 绝缘体 - 金属（M-I-M）结构，具有相对的具有可变相对磁化方向的第一和第二铁磁电极。绝缘体通过在第一电极上沉积可氧化材料（例如，Al）而形成，其自然氧化，例如在低于约35℃的温度下在约0.03至10毫乇达数千秒，然后进一步快速（例如，等离子体）以比初始自然氧化的速率更大的速率氧化。在该氧化物上形成M-I-M结构的第二电极。导致更均匀的隧道性质。任选地，在初始自然氧化之后和快速氧化步骤之间提供第二可氧化材料层，在该氧化步骤期间，其基本上完全转化为绝缘氧化物。可以任选地在第二层被快速氧化之前提供第二自然氧化循环。

7. 发明授权

US07129098B2 Reduced power magnetoresistive random access memory elements 有权
公开(公告)号：US07129098B2
公开(公告)日：2006-10-31
申请号：US10997118
申请日：2004-11-24
申请人： Nicholas D. Rizzo , Renu W. Dave , Bradley N. Engel , Jason A. Janesky , JiJun Sun
发明人： Nicholas D. Rizzo , Renu W. Dave , Bradley N. Engel , Jason A. Janesky , JiJun Sun
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−Nσsat)−(Hsw+Nσsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

8. 发明申请

US20060108620A1 Reduced power magnetoresistive random access memory elements 有权
公开(公告)号：US20060108620A1
公开(公告)日：2006-05-25
申请号：US10997118
申请日：2004-11-24
申请人： Nicholas Rizzo , Renu Dave , Bradley Engel , Jason Janesky , JiJun Sun
发明人： Nicholas Rizzo , Renu Dave , Bradley Engel , Jason Janesky , JiJun Sun
IPC分类号： H01L29/94
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−Nσsat)−(Hsw+Nσsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

9. 发明申请

US20070037299A1 Low power magnetoresistive random access memory elements 有权
公开(公告)号：US20070037299A1
公开(公告)日：2007-02-15
申请号：US11581951
申请日：2006-10-16
申请人： Nicholas Rizzo , Renu Dave , Bradley Engel , Jason Janesky , JiJun Sun
发明人： Nicholas Rizzo , Renu Dave , Bradley Engel , Jason Janesky , JiJun Sun
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−σsat)−(Hsw+σsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

10. 发明申请

US20060017081A1 Magnetic tunnel junction element structures and methods for fabricating the same 有权
标题翻译：磁隧道结元件结构及其制造方法
公开(公告)号：US20060017081A1
公开(公告)日：2006-01-26
申请号：US10899610
申请日：2004-07-26
申请人： JiJun Sun , Renu Dave , Jon Slaughter , Johan Akerman
发明人： JiJun Sun , Renu Dave , Jon Slaughter , Johan Akerman
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/12
摘要： Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer. Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.
摘要翻译：提供磁隧道结（“MTJ”）元件结构和制造MTJ元件结构的方法。 MTJ元件结构可以包括结晶钉扎层，非晶固定层和设置在结晶钉扎层和非晶固定层之间的耦合层。非晶固定层与结晶钉扎层反铁磁耦合。 MTJ元件还包括设置在非晶固定层和自由层之间的自由层和隧道势垒层。另一MTJ元件结构可以包括被钉扎层，固定层和设置在它们之间的非磁性耦合层。隧道势垒层设置在固定层和自由层之间。界面层邻近隧道势垒层和非晶材料层设置。第一界面层包括具有比无定形材料高的自旋极化的材料。

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