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1. 发明申请

US20060017081A1 Magnetic tunnel junction element structures and methods for fabricating the same 有权
标题翻译：磁隧道结元件结构及其制造方法
公开(公告)号：US20060017081A1
公开(公告)日：2006-01-26
申请号：US10899610
申请日：2004-07-26
申请人： JiJun Sun , Renu Dave , Jon Slaughter , Johan Akerman
发明人： JiJun Sun , Renu Dave , Jon Slaughter , Johan Akerman
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/12
摘要： Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer. Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.
摘要翻译：提供磁隧道结（“MTJ”）元件结构和制造MTJ元件结构的方法。 MTJ元件结构可以包括结晶钉扎层，非晶固定层和设置在结晶钉扎层和非晶固定层之间的耦合层。非晶固定层与结晶钉扎层反铁磁耦合。 MTJ元件还包括设置在非晶固定层和自由层之间的自由层和隧道势垒层。另一MTJ元件结构可以包括被钉扎层，固定层和设置在它们之间的非磁性耦合层。隧道势垒层设置在固定层和自由层之间。界面层邻近隧道势垒层和非晶材料层设置。第一界面层包括具有比无定形材料高的自旋极化的材料。

2. 发明申请

US20050247964A1 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 失效
公开(公告)号：US20050247964A1
公开(公告)日：2005-11-10
申请号：US11182149
申请日：2005-07-15
申请人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , Jijun Sun
发明人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , Jijun Sun
IPC分类号： G11C11/16 , H01L29/76 , H01L31/113 , H01L43/08
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.

3. 发明申请

US20070243639A1 Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence 有权
标题翻译：具有降低温度依赖性的合成反铁磁体结构的方法和装置
公开(公告)号：US20070243639A1
公开(公告)日：2007-10-18
申请号：US11406566
申请日：2006-04-18
申请人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , JiJun Sun
发明人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , JiJun Sun
IPC分类号： H01L21/00 , G11B5/33
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.
摘要翻译：合成反铁磁体（SAF）结构包括第一铁磁层，第一插入层，耦合层，第二插入层和第二铁磁层。插入层包括选择的材料，使得SAF显示降低的反铁磁耦合强度的温度依赖性。插入层可以包括CoFe或CoFeX合金。选择插入层的厚度使得它们不增加单轴各向异性或劣化任何其它性质。

4. 发明申请

US20050133840A1 SYNTHETIC ANTIFERROMAGNET STRUCTURES FOR USE IN MTJS IN MRAM TECHNOLOGY 有权
标题翻译：用于MRAM技术的MTJS中的合成抗体结构
公开(公告)号：US20050133840A1
公开(公告)日：2005-06-23
申请号：US10740338
申请日：2003-12-18
申请人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , Jijun Sun
发明人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , Jijun Sun
IPC分类号： G11C11/16 , H01L29/76 , H01L31/113 , H01L43/08
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
摘要翻译：在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。该SAF由被耦合层隔开的两个铁磁层组成。耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。优选的基材是钌，优选的其它材料是钽。进一步提高这些优点，在钽和铁磁层之一的界面处加入钴铁。此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。耦合层本身也可以是合金。

5. 发明申请

US20080017939A1 LOW POWER MAGNETOELECTRONIC DEVICE STRUCTURES UTILIZING ENHANCED PERMEABILITY MATERIALS 失效
标题翻译：低功率电子设备结构使用增强渗透性材料
公开(公告)号：US20080017939A1
公开(公告)日：2008-01-24
申请号：US11867189
申请日：2007-10-04
申请人： Nicholas Rizzo , Renu Dave , Jon Slaughter , Srinivas Pietambaram
发明人： Nicholas Rizzo , Renu Dave , Jon Slaughter , Srinivas Pietambaram
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/838 , Y10S977/933
摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.
摘要翻译：提供了低功率磁电子器件结构及其制造方法。一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。增强的导电介电材料具有不小于约1.5的渗透性。还提供了一种制造磁电子器件结构的方法。该方法包括制造磁电子器件（102）并沉积导线（104）。形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于磁电子器件。

6. 发明申请

US20060186495A1 Low power magnetoelectronic device structures utilizing enhanced permeability materials 有权
标题翻译：利用增强的渗透性材料的低功率磁电子器件结构
公开(公告)号：US20060186495A1
公开(公告)日：2006-08-24
申请号：US11066884
申请日：2005-02-24
申请人： Nicholas Rizzo , Renu Dave , Jon Slaughter , Srinivas Pietambaram
发明人： Nicholas Rizzo , Renu Dave , Jon Slaughter , Srinivas Pietambaram
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/838 , Y10S977/933
摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.
摘要翻译：提供了低功率磁电子器件结构及其制造方法。一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。增强的导电介电材料具有不小于约1.5的渗透性。还提供了一种制造磁电子器件结构的方法。该方法包括制造磁电子器件（102）并沉积导线（104）。形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于磁电子器件。

7. 发明申请

US20050118458A1 Amorphous alloys for magnetic devices 有权
标题翻译：用于磁性器件的无定形合金
公开(公告)号：US20050118458A1
公开(公告)日：2005-06-02
申请号：US10980930
申请日：2004-11-03
申请人： Jon Slaughter , Renu Dave , Srinivas Pietambaram
发明人： Jon Slaughter , Renu Dave , Srinivas Pietambaram
IPC分类号： G11B5/39 , G01R33/09 , G11C11/15 , H01F10/13 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , B32B9/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/12431
摘要： An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.
摘要翻译：公开了一种适用于磁电子器件的钴铁基（CoFe基）磁性合金的非晶层。在本发明的最优选实施例中，在MTJ叠层中提供至少一个非晶层，以增加MTJ叠层中各层的平滑度，同时也提高所得装置的磁性能。此外，本发明的合金还可用于包覆应用中，以提供用于磁电子器件中的信号线的电流容纳以及用作制造写入头的材料。

8. 发明授权

US08686484B2 Spin-torque magnetoresistive memory element and method of fabricating same 有权
标题翻译：自旋扭矩磁阻存储元件及其制造方法
公开(公告)号：US08686484B2
公开(公告)日：2014-04-01
申请号：US13158171
申请日：2011-06-10
申请人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
IPC分类号： H01L21/02
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译：自旋转矩磁阻存储元件具有高磁阻和低电流密度。自由磁性层位于第一和第二自旋偏振器之间。第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。

9. 发明申请

US20140217528A1 SPIN-TORQUE MAGNETORESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATING SAME 有权
标题翻译：旋转磁阻记忆元件及其制造方法
公开(公告)号：US20140217528A1
公开(公告)日：2014-08-07
申请号：US14219532
申请日：2014-03-19
申请人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译：自旋转矩磁阻存储元件具有高磁阻和低电流密度。自由磁性层位于第一和第二自旋偏振器之间。第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。

10. 发明授权

US08508221B2 Two-axis magnetic field sensor having reduced compensation angle for zero offset 有权
标题翻译：两轴磁场传感器具有减小零偏移的补偿角
公开(公告)号：US08508221B2
公开(公告)日：2013-08-13
申请号：US12870970
申请日：2010-08-30
申请人： Jijun Sun , Phillip Mather , Srinivas Pietambaram , Jon Slaughter , Renu Whig , Nicholas Rizzo
发明人： Jijun Sun , Phillip Mather , Srinivas Pietambaram , Jon Slaughter , Renu Whig , Nicholas Rizzo
IPC分类号： G01R33/02 , H01R43/00
CPC分类号： H01L43/10 , G01R33/098 , H01L43/12 , Y10T29/49117
摘要： A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.
摘要翻译：提供传感器和制造工艺，用于形成具有基本上正交的磁化方向的参考层，具有零偏移并具有小的补偿角。示例性实施例包括基于磁阻薄膜的磁场传感器的传感器层堆叠，传感器层堆叠包括钉扎层; 包括在钉扎层上的无定形材料层的钉扎层和在非晶材料层上的第一层结晶材料; 在被钉扎层上的非磁性耦合层; 在非磁耦合层上的固定层; 固定层上的隧道势垒; 以及在非磁性中间层上的感测层。另一个实施例包括传感器层堆叠，其中包括由非晶层隔开的两个结晶层的钉扎层。

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