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1. 发明申请

US20060017081A1 Magnetic tunnel junction element structures and methods for fabricating the same 有权
标题翻译：磁隧道结元件结构及其制造方法
公开(公告)号：US20060017081A1
公开(公告)日：2006-01-26
申请号：US10899610
申请日：2004-07-26
申请人： JiJun Sun , Renu Dave , Jon Slaughter , Johan Akerman
发明人： JiJun Sun , Renu Dave , Jon Slaughter , Johan Akerman
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/12
摘要： Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer. Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.
摘要翻译：提供磁隧道结（“MTJ”）元件结构和制造MTJ元件结构的方法。 MTJ元件结构可以包括结晶钉扎层，非晶固定层和设置在结晶钉扎层和非晶固定层之间的耦合层。非晶固定层与结晶钉扎层反铁磁耦合。 MTJ元件还包括设置在非晶固定层和自由层之间的自由层和隧道势垒层。另一MTJ元件结构可以包括被钉扎层，固定层和设置在它们之间的非磁性耦合层。隧道势垒层设置在固定层和自由层之间。界面层邻近隧道势垒层和非晶材料层设置。第一界面层包括具有比无定形材料高的自旋极化的材料。

2. 发明授权

US07098495B2 Magnetic tunnel junction element structures and methods for fabricating the same 有权
公开(公告)号：US07098495B2
公开(公告)日：2006-08-29
申请号：US10899610
申请日：2004-07-26
申请人： JiJun Sun , Renu W. Dave , Jon M. Slaughter , Johan Akerman
发明人： JiJun Sun , Renu W. Dave , Jon M. Slaughter , Johan Akerman
IPC分类号： H01L29/76
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/12
摘要： Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer.Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.

3. 发明申请

US20090115541A1 CIRCUIT FOR PHASE LOCKED OSCILLATORS 有权
标题翻译：相位锁定振荡器电路
公开(公告)号：US20090115541A1
公开(公告)日：2009-05-07
申请号：US12262772
申请日：2008-10-31
申请人： Johan Persson , Yan Zhou , Johan Akerman
发明人： Johan Persson , Yan Zhou , Johan Akerman
IPC分类号： H03B28/00
CPC分类号： H03B15/006 , Y10T428/1107
摘要： The present invention pertains to a circuit comprising a DC current source and at least two spin torque oscillators, the at least two spin torque oscillators being electrically coupled to each other and to the DC current source. A circuit comprising phase shifting means is connected in such a way as to cause a phase shift between current and voltage through the spin torque oscillators. An advantage of the present invention is that the controlled phase shift significantly increases the tolerance for deviating anisotropy fields, which makes manufacturing of spin torque oscillator devices much more feasible in practice.FIG. 2, wherein the DC current source comprises phase shifting means.
摘要翻译：本发明涉及包括DC电流源和至少两个自旋转矩振荡器的电路，所述至少两个自旋扭矩振荡器彼此电耦合并且连接到DC电流源。包括相移装置的电路以通过自旋扭矩振荡器引起电流和电压之间的相移的方式连接。本发明的一个优点是受控相移显着增加了偏差各向异性场的公差，这使得自旋扭矩振荡器装置的制造在实践中更加可行。图。 2，其中所述DC电流源包括相移装置。

4. 发明授权

US09543894B2 Spin oscillator device 有权
标题翻译：旋转振荡器装置
公开(公告)号：US09543894B2
公开(公告)日：2017-01-10
申请号：US14776090
申请日：2014-03-14
申请人： Johan Akerman
发明人： Johan Akerman
IPC分类号： H03B15/00 , H01L43/08 , H01F10/32
CPC分类号： H03B15/006 , H01F10/3281 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and report on their rich dynamical properties. Micromagnetic simulations identify a wide range of automodulation frequencies including droplet oscillatory motion, droplet “spinning”, and droplet “breather” states. The droplet can be controlled using both current and magnetic fields, and is expected to have applications in spintronics, magnonics, and PMA-based domain-wall devices.
摘要翻译：本发明涉及在具有垂直磁各向异性（PMA）的磁性薄膜上使用纳米接触下的自旋转移转矩，提供消散磁滴孤子的产生并报告其丰富的动力特性。微电磁模拟识别范围广泛的自动调频频率，包括液滴振荡运动，液滴“旋转”和液滴“呼吸”状态。可以使用电场和磁场来控制液滴，并且预计可以在自旋电子学，磁学和基于PMA的畴壁装置中应用。

5. 发明申请

US20160036384A1 SPIN OSCILLATOR DEVICE 审中-公开
标题翻译：旋转振荡器装置
公开(公告)号：US20160036384A1
公开(公告)日：2016-02-04
申请号：US14776090
申请日：2014-03-14
申请人： Johan Akerman
发明人： Johan Akerman
IPC分类号： H03B15/00
CPC分类号： H03B15/006 , H01F10/3281 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and report on their rich dynamical properties. Micromagnetic simulations identify a wide range of automodulation frequencies including droplet oscillatory motion, droplet “spinning”, and droplet “breather” states. The droplet can be controlled using both current and magnetic fields, and is expected to have applications in spintronics, magnonics, and PMA-based domain-wall devices.
摘要翻译：本发明涉及在具有垂直磁各向异性（PMA）的磁性薄膜上使用纳米接触下的自旋转移转矩，提供消散磁滴孤子的产生并报告其丰富的动力特性。微电磁模拟识别范围广泛的自动调频频率，包括液滴振荡运动，液滴“旋转”和液滴“呼吸”状态。可以使用电场和磁场来控制液滴，并且预计可以在自旋电子学，磁学和基于PMA的畴壁装置中应用。

6. 发明授权

US10615748B2 Spin oscillator device 有权
公开(公告)号：US10615748B2
公开(公告)日：2020-04-07
申请号：US15303063
申请日：2015-04-02
申请人： Johan Akerman
发明人： Johan Akerman
IPC分类号： H03B15/00 , H01F10/32 , G11C11/16 , G11B5/39 , H03L7/26 , H01F41/32 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08
CPC分类号： H03B15/006 , G11B5/3909 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3286 , H03L7/26 , H01F41/325 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08
摘要： The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and magnetic droplet-skyrmions and report on their rich dynamical properties. Micromagnetic simulations identify the conditions necessary to nucleate and drive droplet-skyrmions over a wide range of currents and fields. Micromagnetic simulations also demonstrate how droplets and droplet-skyrmions can be used as skyrmion injectors and detectors in skyrmion-based magnetic memories. The droplet-skyrmion can be controlled using both current and magnetic fields, and is expected to have applications in spintronics, magnonics, skyrmionics, and PMA-based domain-wall devices.

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