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1. 发明授权

US5712181A Method for the formation of polycide gate in semiconductor device 失效
标题翻译：半导体器件中多晶硅栅极的形成方法
公开(公告)号：US5712181A
公开(公告)日：1998-01-27
申请号：US565634
申请日：1995-11-29
申请人： Jeong Soo Byun , Hyeong Joon Kim
发明人： Jeong Soo Byun , Hyeong Joon Kim
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L29/78 , H01L21/265
CPC分类号： H01L21/28052 , H01L2924/0002
摘要： A method for the formation of gate in a semiconductor device is disclosed. The method for the formation of gate in a semiconductor device, comprising the steps of: forming amorphous silicon and polysilicon over a gate insulating film atop a semiconductor substrate, in due order; implanting impurity ions into the polysilicon and carrying out heat treatment; and forming a layer of a refractory metal over the silicon and carrying out heat treatment, to form polycide. Capable of preventing the degradation which is attributed to the penetration of impurities and thermal instability when forming a P.sup.+ polygate, the method contribute to the improvement in electrical properties.
摘要翻译：公开了一种在半导体器件中形成栅极的方法。一种在半导体器件中形成栅极的方法，包括以下步骤：在半导体衬底顶上的栅极绝缘膜上形成非晶硅和多晶硅; 将杂质离子注入多晶硅并进行热处理; 在硅上形成难熔金属层，进行热处理，形成多晶硅化合物。能够防止由于杂质渗透导致的降解和形成P +多孔板时的热不稳定性，该方法有助于电性能的改善。

2. 发明申请

US20120006265A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20120006265A1
公开(公告)日：2012-01-12
申请号：US13235855
申请日：2011-09-19
申请人： BARRY L. CHIN , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： BARRY L. CHIN , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

3. 发明申请

US20090156004A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20090156004A1
公开(公告)日：2009-06-18
申请号：US12335983
申请日：2008-12-16
申请人： MORIS KORI , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： MORIS KORI , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/285 , H01L21/443
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

4. 发明授权

US07485556B2 Forming metal silicide on silicon-containing features of a substrate 失效
标题翻译：在基底的含硅特征上形成金属硅化物
公开(公告)号：US07485556B2
公开(公告)日：2009-02-03
申请号：US11084450
申请日：2005-03-18
申请人： Jeong Soo Byun , Jianxin Lei , Lisa Yang , Hien-Minh Huu Le
发明人： Jeong Soo Byun , Jianxin Lei , Lisa Yang , Hien-Minh Huu Le
IPC分类号： H01L21/28
CPC分类号： C23C14/165 , H01L21/28518 , H01L21/2855 , H01L29/665 , H01L29/78
摘要： A metal silicide layer is formed on silicon-containing features of a substrate in a chamber. A metal film is sputter deposited on the substrate and a portion of the sputter deposited metal film is silicided. In the process, sputtering gas is energized by applying an electrical bias potential across the metal sputtering target and the substrate support to sputter deposit metal from a target onto the substrate. At least a portion of the deposited sputtered metal is silicided by heating the substrate to a silicidation temperature exceeding about 200° C. to form a combined sputtered metal and metal silicide layer on the substrate. The remaining sputtered metal can be silicided by maintaining the substrate at the silicidation temperature to form the metal silicide layer.
摘要翻译：在室中的衬底的含硅特征上形成金属硅化物层。金属膜被溅射沉积在衬底上，溅射沉积的金属膜的一部分被硅化。在该过程中，溅射气体通过在金属溅射靶和衬底支撑件上施加电偏压来激发，以将金属从靶溅射到衬底上。沉积的溅射金属的至少一部分通过将衬底加热到超过约200℃的硅化温度来硅化，以在衬底上形成组合的溅射金属和金属硅化物层。剩余的溅射金属可以通过将衬底保持在硅化温度下来硅化，形成金属硅化物层。

5. 发明申请

US20080166893A1 LOW TEMPERATURE OXIDE FORMATION 审中-公开
标题翻译：低温氧化物形成
公开(公告)号：US20080166893A1
公开(公告)日：2008-07-10
申请号：US11969125
申请日：2008-01-03
申请人： Jeong Soo Byun , Krishnaswamy Ramkumar
发明人： Jeong Soo Byun , Krishnaswamy Ramkumar
IPC分类号： H01L21/321
CPC分类号： H01L21/28247 , H01L21/28044 , H01L29/4925
摘要： A method of forming a semiconductor structure includes oxidizing a gate stack at a temperature of at most 600° C. with a plasma prepared from a gas mixture. The gas mixture includes an oxygen-containing gas and ammonia, and the gate stack is on a semiconductor substrate. The gate stack contains a gate layer, a conductive layer on the gate layer, a metal layer on the conductive layer, and a capping layer on the metal layer.
摘要翻译：形成半导体结构的方法包括用气体混合物制备的等离子体在至多600℃的温度下氧化栅极叠层。气体混合物包括含氧气体和氨，并且栅极堆叠在半导体衬底上。栅极堆叠包含栅极层，栅极层上的导电层，导电层上的金属层和金属层上的覆盖层。

6. 发明授权

US06939804B2 Formation of composite tungsten films 有权
公开(公告)号：US06939804B2
公开(公告)日：2005-09-06
申请号：US10299212
申请日：2002-11-18
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

7. 发明授权

US06903031B2 In-situ-etch-assisted HDP deposition using SiF4 and hydrogen 有权
标题翻译：使用SiF4和氢进行原位蚀刻辅助的HDP沉积
公开(公告)号：US06903031B2
公开(公告)日：2005-06-07
申请号：US10655230
申请日：2003-09-03
申请人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
发明人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
IPC分类号： C23C16/04 , C23C16/40 , C23C16/50 , H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.
摘要翻译：提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。包括SiF 4，H 2 S，硅源和氧化性气体反应物的工艺气体流入处理室。从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。在这种沉积过程中，衬底的温度大于450℃

8. 发明授权

US06620723B1 Formation of boride barrier layers using chemisorption techniques 失效
标题翻译：使用化学吸附技术形成硼化物阻挡层
公开(公告)号：US06620723B1
公开(公告)日：2003-09-16
申请号：US09604943
申请日：2000-06-27
申请人： Jeong Soo Byun , Alfred Mak
发明人： Jeong Soo Byun , Alfred Mak
IPC分类号： H01L214763
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.
摘要翻译：公开了形成用于集成电路制造的硼化物层的方法。在一个实施方案中，硼化物层通过将含硼化合物和一种难熔金属化合物的单层化学吸附到基底上而形成。在替代实施例中，硼化物层具有复合结构。复合硼化物层结构包括两种或多种难熔金属。复合硼化物层通过在基材上依次化学吸附硼化合物的单层和两种或更多种难熔金属化合物而形成。

9. 发明授权

US5665209A Method for forming refractory metal nitride film 失效
$Method for forming refractory metal nitride film$
标题翻译：形成难熔金属氮化物膜的方法
公开(公告)号：US5665209A
公开(公告)日：1997-09-09
申请号：US437893
申请日：1995-05-10
申请人： Jeong Soo Byun
发明人： Jeong Soo Byun
IPC分类号： C30B25/06 , C23C14/06 , C23C14/58 , C30B29/38 , H01L21/28 , H01L21/285 , H01L21/318 , C23C14/00
CPC分类号： C23C14/5806 , C23C14/0641 , C23C14/58 , C23C14/5893 , H01L21/2855 , H01L21/76841 , H01L21/76856
摘要： A method for forming a refractory metal nitride film having excellent diffusion barrier properties suitable for a dielectric electrode includes a step of depositing a refractory metal film containing nitrogen on a silicon substrate in a mixed gas atmosphere of Ar and N.sub.2, such that the volumetric content of the nitrogen in the mixed gas does not exceed 20%, and a step of forming a completed refractory metal film by subjecting the refractory metal film to a heat treatment in an N.sub.2 or NH.sub.3 atmosphere. The content of nitrogen in the refractory metal film depends on the content of nitrogen in the ambient gas, and the ratio of nitrogen contained in the refractory metal film to the refractory metal does not exceed unity. The refractory metals may be any of the transition metals in Groups IVB, VB, and VIB of the periodic table.
摘要翻译：一种形成具有适合于电介质电极的扩散阻挡性优异的难熔金属氮化物膜的方法包括在Ar和N2的混合气体气氛中，在硅衬底上沉积含有氮的难熔金属膜的步骤，混合气体中的氮不超过20％，并且通过使耐火金属膜在N 2或NH 3气氛中进行热处理来形成完成的难熔金属膜的步骤。难熔金属膜中的氮含量取决于环境气体中氮的含量，并且难熔金属膜中的氮与难熔金属的比例不超过1。难熔金属可以是元素周期表的IVB，VB和VIB族中的任何过渡金属。

10. 发明授权

US08626330B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08626330B2
公开(公告)日：2014-01-07
申请号：US13235855
申请日：2011-09-19
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

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