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1. 发明授权

US08710578B2 SONOS stack with split nitride memory layer 有权
标题翻译： SONOS堆叠带有划痕的氮化物存储层
公开(公告)号：US08710578B2
公开(公告)日：2014-04-29
申请号：US13431069
申请日：2012-03-27
申请人： Fredrick Jenne , Krishnaswamy Ramkumar
发明人： Fredrick Jenne , Krishnaswamy Ramkumar
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , B82Y10/00 , H01L21/28282 , H01L29/513 , H01L29/785 , H01L29/7926
摘要： Embodiments of a non-planar memory device including a split charge-trapping region and methods of forming the same are described. Generally, the device comprises: a channel formed from a thin film of semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide overlying the channel; a split charge-trapping region overlying the tunnel oxide, the split charge-trapping region including a bottom charge-trapping layer comprising a nitride closer to the tunnel oxide, and a top charge-trapping layer, wherein the bottom charge-trapping layer is separated from the top charge-trapping layer by a thin anti-tunneling layer comprising an oxide. Other embodiments are also disclosed.
摘要翻译：描述了包括分离电荷捕获区域的非平面存储器件及其形成方法的实施例。通常，该器件包括：由覆盖存储器件的源极和漏极的衬底上的表面的半导体材料薄膜形成的沟道; 覆盖通道的隧道氧化物; 分离电荷捕获区域，覆盖隧道氧化物，分离电荷捕获区域包括底部电荷捕获层，其包含更接近隧道氧化物的氮化物，以及顶部电荷捕获层，其中底部电荷捕获层被分离从顶部的电荷捕获层通过包含氧化物的薄的抗隧道层。还公开了其他实施例。

2. 发明申请

US20130178030A1 METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW 有权
标题翻译： ONO集成到逻辑CMOS流的方法
公开(公告)号：US20130178030A1
公开(公告)日：2013-07-11
申请号：US13434347
申请日：2012-03-29
申请人： Krishnaswamy Ramkumar , Bo Jin , Fredrick Jenne
发明人： Krishnaswamy Ramkumar , Bo Jin , Fredrick Jenne
IPC分类号： H01L21/336
CPC分类号： B82Y10/00 , H01L21/28282 , H01L21/823431 , H01L21/823821 , H01L27/105 , H01L27/1052 , H01L27/11568 , H01L27/11573 , H01L29/66833 , H01L29/792 , H01L29/7926
摘要： An embodiment of a method of integration of a non-volatile memory device into a logic MOS flow is described. Generally, the method includes: forming a pad dielectric layer of a MOS device above a first region of a substrate; forming a channel of the memory device from a thin film of semiconducting material overlying a surface above a second region of the substrate, the channel connecting a source and drain of the memory device; forming a patterned dielectric stack overlying the channel above the second region, the patterned dielectric stack comprising a tunnel layer, a charge-trapping layer, and a sacrificial top layer; simultaneously removing the sacrificial top layer from the second region of the substrate, and the pad dielectric layer from the first region of the substrate; and simultaneously forming a gate dielectric layer above the first region of the substrate and a blocking dielectric layer above the charge-trapping layer.
摘要翻译：描述了将非易失性存储器件集成到逻辑MOS流中的方法的实施例。通常，该方法包括：在衬底的第一区域之上形成MOS器件的焊盘电介质层; 从半导体材料的薄膜形成存储器件的沟道，该半导体材料的薄膜覆盖在衬底的第二区域上方的表面，所述通道连接存储器件的源极和漏极; 形成覆盖在第二区域上方的通道上的图案化电介质堆叠，所述图案化电介质叠层包括隧道层，电荷俘获层和牺牲顶层; 同时从衬底的第二区域去除牺牲顶层，以及从衬底的第一区域去除焊盘介电层; 并且同时在衬底的第一区域上方形成栅极电介质层，并且在电荷俘获层上方形成阻挡电介质层。

3. 发明申请

US20130175504A1 OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS 有权
标题翻译：具有多个氧化物层的氧化物 - 氮氧化物堆
公开(公告)号：US20130175504A1
公开(公告)日：2013-07-11
申请号：US13436872
申请日：2012-03-31
申请人： Sagy Levy , Krishnaswamy Ramkumar , Fredrick Jenne , Sam Geha
发明人： Sagy Levy , Krishnaswamy Ramkumar , Fredrick Jenne , Sam Geha
IPC分类号： H01L29/775
CPC分类号： H01L29/66833 , B82Y10/00 , G11C16/0466 , G11C16/10 , G11C16/14 , H01L21/28282 , H01L29/0673 , H01L29/0676 , H01L29/4234 , H01L29/42392 , H01L29/66795 , H01L29/7833 , H01L29/792 , H01L29/7926
摘要： An embodiment of a semiconductor memory device including a multi-layer charge storing layer and methods of forming the same are described. Generally, the device includes a channel formed from a semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide layer overlying the channel; and a multi-layer charge storing layer including an oxygen-rich, first oxynitride layer on the tunnel oxide layer in which a stoichiometric composition of the first oxynitride layer results in it being substantially trap free, and an oxygen-lean, second oxynitride layer on the first oxynitride layer in which a stoichiometric composition of the second oxynitride layer results in it being trap dense. In one embodiment, the device comprises a non-planar transistor including a gate having multiple surfaces abutting the channel, and the gate comprises the tunnel oxide layer and the multi-layer charge storing layer.
摘要翻译：描述了包括多层电荷存储层的半导体存储器件的实施例及其形成方法。通常，该器件包括由半导体材料形成的沟道，该半导体材料覆盖连接存储器件的源极和漏极的衬底上的表面; 覆盖通道的隧道氧化物层; 以及多层电荷存储层，其在所述隧道氧化物层上包含富氧的第一氧氮化物层，其中所述第一氧氮化物层的化学计量组成导致其基本上无陷阱，并且将贫氧的第二氮氧化物层置于第一氧氮化物层，其中第二氧氮化物层的化学计量组成导致其陷阱致密。在一个实施例中，该器件包括非平面晶体管，其包括具有邻接通道的多个表面的栅极，并且栅极包括隧道氧化物层和多层电荷存储层。

4. 发明授权

US08445381B2 Oxide-nitride stack gate dielectric 有权
标题翻译：氧化氮化物堆叠栅极电介质
公开(公告)号：US08445381B2
公开(公告)日：2013-05-21
申请号：US11961750
申请日：2007-12-20
申请人： Krishnaswamy Ramkumar , Sundar Narayanan
发明人： Krishnaswamy Ramkumar , Sundar Narayanan
IPC分类号： H01L21/02
CPC分类号： H01L21/022 , H01L21/0217 , H01L21/02233 , H01L21/02337 , H01L21/28044 , H01L21/3144 , H01L29/4941 , H01L29/78
摘要： A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
摘要翻译：制造半导体结构的方法包括在衬底上形成氧化物层; 在氧化物层上形成氮化硅层; 在NO中退火层; 并在氨中退火层。氧化物层和氮化硅层的等效氧化物厚度在一起为至多25埃。

5. 发明授权

US08143129B2 Integration of non-volatile charge trap memory devices and logic CMOS devices 有权
标题翻译：集成非易失性电荷陷阱存储器件和逻辑CMOS器件
公开(公告)号：US08143129B2
公开(公告)日：2012-03-27
申请号：US12185747
申请日：2008-08-04
申请人： Krishnaswamy Ramkumar , Ravindra Kapre , Jeremy Warren
发明人： Krishnaswamy Ramkumar , Ravindra Kapre , Jeremy Warren
IPC分类号： H01L29/792
CPC分类号： H01L29/7833 , H01L21/823412 , H01L21/823425 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/11568 , H01L27/11573 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7836 , H01L29/7843
摘要： A semiconductor structure and method to form the same. The semiconductor structure includes a substrate having a non-volatile charge trap memory device disposed on a first region and a logic device disposed on a second region. A charge trap dielectric stack may be formed subsequent to forming wells and channels of the logic device. HF pre-cleans and SC1 cleans may be avoided to improve the quality of a blocking layer of the non-volatile charge trap memory device. The blocking layer may be thermally reoxidized or nitridized during a thermal oxidation or nitridation of a logic MOS gate insulator layer to densify the blocking layer. A multi-layered liner may be utilized to first offset a source and drain implant in a high voltage logic device and also block silicidation of the nonvolatile charge trap memory device.
摘要翻译：一种半导体结构及其形成方法。半导体结构包括具有设置在第一区域上的非易失性电荷陷阱存储器件和设置在第二区域上的逻辑器件的衬底。可以在形成逻辑器件的阱和通道之后形成电荷陷阱电介质叠层。可以避免HF预清洗和SC1清洁，以提高非挥发性电荷陷阱存储器件的阻挡层的质量。在逻辑MOS栅极绝缘体层的热氧化或氮化期间，阻挡层可以被热再氧化或氮化，以致密封阻挡层。可以使用多层衬垫来首先在高压逻辑器件中偏置源极和漏极注入，并且还阻挡非易失性电荷陷阱存储器件的硅化。

6. 发明授权

US07898852B1 Trapped-charge non-volatile memory with uniform multilevel programming 有权
标题翻译：具有均匀多电平编程的陷阱充电非易失性存储器
公开(公告)号：US07898852B1
公开(公告)日：2011-03-01
申请号：US12005803
申请日：2007-12-27
申请人： Sagy Levy , Krishnaswamy Ramkumar , Peter Voss
发明人： Sagy Levy , Krishnaswamy Ramkumar , Peter Voss
IPC分类号： G11C16/04
CPC分类号： G11C16/0466 , G11C11/56 , H01L21/28282 , H01L29/42324 , H01L29/4234 , H01L29/7881 , H01L29/792
摘要： Methods and apparatus for programming and sensing a bi-nitride layer trapped-charge memory device in one of a first and second programmed states or one of a first and second erased states, where the first and second programmed states correspond to first and second uniform trapped charge distributions of a first charge type and the first and second erased states correspond to first and second uniform trapped charge distributions of a second charge type.
摘要翻译：用于以第一和第二编程状态或第一和第二擦除状态中的一种编程和感测二氮化物层捕获电荷存储器件的方法和装置，其中第一和第二编程状态对应于第一和第二均匀捕获第一充电类型和第一和第二擦除状态的电荷分布对应于第二充电类型的第一和第二均匀俘获电荷分布。

7. 发明授权

US07867918B1 Semiconductor topography including a thin oxide-nitride stack and method for making the same 有权
标题翻译：包括薄氧化物氮化物堆叠的半导体形貌及其制造方法
公开(公告)号：US07867918B1
公开(公告)日：2011-01-11
申请号：US12046073
申请日：2008-03-11
申请人： Krishnaswamy Ramkumar
发明人： Krishnaswamy Ramkumar
IPC分类号： H01L21/31
CPC分类号： H01L21/28282 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02233 , H01L21/02271 , H01L21/28202 , H01L21/28273 , H01L21/3143 , H01L29/513 , H01L29/518
摘要： A semiconductor topography is provided which includes a silicon dioxide layer with a thickness equal to or less than approximately 10 angstroms and a silicon nitride layer arranged upon the silicon dioxide layer. In addition, a method is provided which includes growing an oxide film upon a semiconductor topography in the presence of an ozonated substance and depositing a silicon nitride film upon the oxide film. In some embodiments, the method may include growing the oxide film in a first chamber at a first temperature and transferring the semiconductor topography from the first chamber to a second chamber while the semiconductor topography is exposed to a substantially similar temperature as the first temperature. In either embodiment, the method may be used to form a semiconductor device including an oxide-nitride gate dielectric having an electrical equivalent oxide gate dieletric thickness of less than approximately 20 angstroms.
摘要翻译：提供半导体形貌，其包括厚度等于或小于约10埃的二氧化硅层和布置在二氧化硅层上的氮化硅层。此外，提供了一种方法，其包括在存在臭氧化物质的情况下在半导体形貌上生长氧化膜并在氧化物膜上沉积氮化硅膜。在一些实施例中，该方法可以包括在第一温度下在第一室中生长氧化膜并将半导体形貌从第一室转移到第二室，同时将半导体形貌暴露于与第一温度基本相似的温度。在任一实施例中，该方法可用于形成半导体器件，其包括具有小于约20埃的电等效氧化物栅极薄膜厚度的氧化物 - 氮化物栅极电介质。

8. 发明授权

US07670963B2 Single-wafer process for fabricating a nonvolatile charge trap memory device 有权
标题翻译：用于制造非易失性电荷陷阱存储器件的单晶片工艺
公开(公告)号：US07670963B2
公开(公告)日：2010-03-02
申请号：US11904513
申请日：2007-09-26
申请人： Krishnaswamy Ramkumar , Sagy Levy
发明人： Krishnaswamy Ramkumar , Sagy Levy
IPC分类号： H01L21/469
CPC分类号： H01L21/28282 , H01L21/3144 , H01L21/3145 , H01L29/4234 , H01L29/66833 , Y10S438/954
摘要： A method for fabricating a nonvolatile charge trap memory device is described. The method includes first forming a tunnel dielectric layer on a substrate in a first process chamber of a single-wafer cluster tool. A charge-trapping layer is then formed on the tunnel dielectric layer in a second process chamber of the single-wafer cluster tool. A top dielectric layer is then formed on the charge-trapping layer in the second or in a third process chamber of the single-wafer cluster tool.
摘要翻译：描述了制造非易失性电荷陷阱存储器件的方法。该方法包括首先在单晶片簇工具的第一处理室中的衬底上形成隧道电介质层。然后在单晶片簇工具的第二处理室中的隧道介电层上形成电荷捕获层。然后在单晶片簇工具的第二或第三处理室中的电荷俘获层上形成顶部电介质层。

9. 发明授权

US07629653B1 Techniques for improving negative bias temperature instability (NBTI) lifetime of field effect transistors 有权
标题翻译：改善场效应晶体管负偏压温度不稳定性（NBTI）寿命的技术
公开(公告)号：US07629653B1
公开(公告)日：2009-12-08
申请号：US11827765
申请日：2007-07-13
申请人： Sharmin Sadoughi , Krishnaswamy Ramkumar , Ravindra Kapre , Igor Polishchuk , Maroun Khoury
发明人： Sharmin Sadoughi , Krishnaswamy Ramkumar , Ravindra Kapre , Igor Polishchuk , Maroun Khoury
IPC分类号： H01L29/78
CPC分类号： H01L21/823857 , H01L21/823842
摘要： In one embodiment, an integrated circuit includes a PMOS transistor having a gate stack comprising a P+ doped gate polysilicon layer and a nitrided gate oxide (NGOX) layer. The NGOX layer may be over a silicon substrate. The integrated circuit further includes an interconnect line formed over the transistor. The interconnect line includes a hydrogen getter material and may comprise a single material or stack of materials. The interconnect line advantageously getters hydrogen (e.g., H2 or H2O) that would otherwise be trapped in the NGOX layer/silicon substrate interface, thereby improving the negative bias temperature instability (NBTI) lifetime of the transistor.
摘要翻译：在一个实施例中，集成电路包括具有包括P +掺杂栅极多晶硅层和氮化栅极氧化物（NGOX）层的栅极堆叠的PMOS晶体管。 NGOX层可以在硅衬底之上。集成电路还包括形成在晶体管上的互连线。互连线包括吸氢材料，并且可以包括单一材料或材料堆。互连线有利地吸收否则将被捕获在NGOX层/硅衬底界面中的氢（例如，H 2或H 2 O），从而改善晶体管的负偏压温度不稳定性（NBTI）寿命。

10. 发明申请

US20090243001A1 Sequential deposition and anneal of a dielectic layer in a charge trapping memory device 有权
标题翻译：在电荷俘获存储器件中的介电层的顺序沉积和退火
公开(公告)号：US20090243001A1
公开(公告)日：2009-10-01
申请号：US12080166
申请日：2008-03-31
申请人： Krishnaswamy Ramkumar , Sagy Levy
发明人： Krishnaswamy Ramkumar , Sagy Levy
IPC分类号： H01L29/00 , H01L21/31
CPC分类号： H01L21/28282 , H01L21/3145
摘要： Deposition and anneal operations are iterated to break a deposition into a number of sequential deposition-anneal operations to reach a desired annealed dielectric layer thickness. In one particular embodiment, a two step anneal is performed including an NH3 or ND3 ambient followed by an N2O or NO ambient. In one embodiment, such a method is employed to form a dielectric layer having a stoichiometry attainable with only a deposition process but with a uniform material quality uncharacteristically high of a deposition process. In particular embodiments, sequential deposition-anneal operations provide an annealed first dielectric layer upon which a second dielectric layer may be left substantially non-annealed.
摘要翻译：重复沉积和退火操作以将沉积破坏成多个顺序的沉积退火操作以达到期望的退火介电层厚度。在一个具体实施方案中，进行包括NH 3或ND 3环境，随后是N 2 O或NO环境的两步退火。在一个实施例中，采用这种方法形成具有仅通过沉积工艺可获得的化学计量但具有均匀材料质量的电介质层，这在沉积过程中具有非常高的特性。在特定实施例中，顺序沉积 - 退火操作提供退火的第一介电层，第二介电层可以在其上基本上保持不退火。

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