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1. 发明申请

US20080110746A1 Novel manufacturing design and processing methods and apparatus for sputtering targets 审中-公开
标题翻译：用于溅射靶的新型制造设计和加工方法和装置
公开(公告)号：US20080110746A1
公开(公告)日：2008-05-15
申请号：US11595658
申请日：2006-11-09
申请人： Janine K. Kardokus , Werner Hort , Susan D. Strothers , Christie J. Hausman , Kevin T. Hubert , Diana Morales , Michael D. Payton
发明人： Janine K. Kardokus , Werner Hort , Susan D. Strothers , Christie J. Hausman , Kevin T. Hubert , Diana Morales , Michael D. Payton
IPC分类号： C23C14/00
CPC分类号： C23C14/3414
摘要： Sputtering targets having reduced burn-in times are described herein that include: a) a machine-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the machine-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Sputtering targets having reduced burn-in times are described herein that include: a surface material, and a core material, wherein at least one of the surface material or the core material comprises a relatively band-free crystallographic orientation. In addition, methods of producing sputtering targets having reduced burn-in times include: providing a surface material having at least some residual surface damage, providing a core material, coupling the surface material to the core material, and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Also, methods of producing sputtering targets having reduced burn-in times include: providing a surface material combined with a core material, wherein the surface material has at least some residual surface damage and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material.
摘要翻译：本文描述了具有减少的老化时间的溅射靶，其包括：a）具有平均晶粒尺寸的机加工的表面材料，以及b）具有平均晶粒尺寸的芯材，其中机加工表面材料具有平均表面粗糙度（Ra）等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。本文描述了具有减少的老化时间的溅射靶，其包括：表面材料和芯材料，其中至少一个表面材料或芯材料包含相对无带的结晶取向。此外，生产具有减少的老化时间的溅射靶的方法包括：提供具有至少一些残余表面损伤的表面材料，提供芯材料，将表面材料耦合到芯材料，以及将表面材料机加工成平均表面粗糙度（Ra）等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。此外，生产具有减少的烧成时间的溅射靶的方法包括：提供与芯材组合的表面材料，其中表面材料具有至少一些残余表面损伤并将表面材料机加工成平均表面粗糙度（Ra ）等于或小于表面材料或芯材料中的至少一种的平均晶粒尺寸。

2. 发明申请

US20090065354A1 SPUTTERING TARGETS COMPRISING A NOVEL MANUFACTURING DESIGN, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
标题翻译：包含新型制造设计的飞溅目标，生产方法及其用途
公开(公告)号：US20090065354A1
公开(公告)日：2009-03-12
申请号：US11854064
申请日：2007-09-12
申请人： Janine K. Kardokus , Susan D. Strothers , Brett Clark , Ira G. Nolander , Florence A. Baldwin , Jianxing Li
发明人： Janine K. Kardokus , Susan D. Strothers , Brett Clark , Ira G. Nolander , Florence A. Baldwin , Jianxing Li
IPC分类号： C23C14/00 , B22D21/00 , B22D27/00 , G01N23/00 , C22C21/12 , C22C9/01
CPC分类号： C22C9/01 , B22D21/007 , B22D21/025 , C22C21/12 , C23C14/3414
摘要： A sputtering target is described herein, which includes: a) a surface material, and b) a core material coupled to the surface material, wherein at least one of the surface material or the core material has less than 100 ppm defect volume. Methods for producing sputtering targets are described that include: a) providing at least one sputtering target material, b) melting the at least one sputtering target material to provide a molten material, c) degassing the molten material, d) pouring the molten material into a target mold. In some embodiments, pouring the molten material into a target mold comprises under-pouring or under-skimming the molten material from the crucible into the target mold. Sputtering targets and related apparatus formed by and utilizing these methods are also described herein. In addition, uses of these sputtering targets are described herein.
摘要翻译：本文描述了溅射靶，其包括：a）表面材料，以及b）与表面材料耦合的芯材料，其中至少一个表面材料或芯材料具有小于100ppm的缺陷体积。描述了生产溅射靶的方法，包括：a）提供至少一种溅射靶材料，b）熔化至少一种溅射靶材料以提供熔融材料，c）使熔融材料脱气，d）将熔融材料倒入目标模具。在一些实施例中，将熔融材料注入到目标模具中包括将熔融材料从坩埚倒入或低于目标模具。本文还描述了通过和利用这些方法形成的溅射靶和相关装置。此外，这里描述了这些溅射靶的用途。

3. 发明授权

US08030082B2 Liquid-particle analysis of metal materials 有权
标题翻译：金属材料的液 - 液分析
公开(公告)号：US08030082B2
公开(公告)日：2011-10-04
申请号：US11331489
申请日：2006-01-13
申请人： Susan D. Strothers , Janine K. Kardokus , Brett M. Clark
发明人： Susan D. Strothers , Janine K. Kardokus , Brett M. Clark
IPC分类号： G01N33/20 , G01N33/53
CPC分类号： G01N33/20
摘要： The invention includes a method of detecting impurities in a metal-containing article. A portion of metal material is removed from a metal article and is solubilized in an acid or base-comprising liquid to produce a liquid sample. The liquid sample is subjected to an incident laser beam and light scattered from the sample is detected. The invention includes a method of analyzing a physical vapor deposition target material. A portion of target material is removed from the target and is rinsed with an acid-comprising solution. The portion of target material is dissolved to produce a liquid sample. The sample is subjected to an incident laser beam and scatter of the laser beam is detected to determine the number of particles present in the sample within a particular size range.
摘要翻译：本发明包括检测含金属物品中的杂质的方法。将一部分金属材料从金属制品中除去并溶解在含酸或碱的液体中以产生液体样品。对液体样品进行入射的激光束，并且检测从样品散射的光。本发明包括分析物理气相沉积靶材料的方法。将目标材料的一部分从靶上除去并用含酸溶液冲洗。将目标材料的部分溶解以产生液体样品。对样品进行入射激光束，并且检测激光束的散射以确定在特定尺寸范围内存在于样品中的颗粒的数量。

4. 发明授权

US06555250B2 Ni-plated target diffusion bonded to a backing plate and method of making same 失效
标题翻译：镀镍靶扩散结合到背板及其制造方法
公开(公告)号：US06555250B2
公开(公告)日：2003-04-29
申请号：US09311190
申请日：1999-05-12
申请人： Ritesh P. Shah , David E. Steele , William R. Turner , Anthony F. Beier , Janine K. Kardokus , Susan D. Strothers
发明人： Ritesh P. Shah , David E. Steele , William R. Turner , Anthony F. Beier , Janine K. Kardokus , Susan D. Strothers
IPC分类号： C23C1434
CPC分类号： C23C14/3407 , Y10T428/1275 , Y10T428/12806 , Y10T428/1291 , Y10T428/12944
摘要： The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat treatment includes heating and quenching, with the quenching being performed by immersing the backing plate in a quenchant without submerging the sputtering target.
摘要翻译：本发明包括形成热处理溅射靶组件的方法。背板扩散接合到溅射靶以产生溅射靶组件。对溅射靶组件进行热处理以使组件的背板沉淀硬化。热处理包括加热和淬火，淬火是通过将背板浸入淬火剂中而不浸没溅射靶来进行的。

5. 发明授权

US06274015B1 Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same 有权
标题翻译：具有沉淀硬化背板的扩散接合溅射靶组件及其制造方法
公开(公告)号：US06274015B1
公开(公告)日：2001-08-14
申请号：US09125906
申请日：1998-08-12
申请人： Anthony F. Beier , Janine K. Kardokus , Susan D. Strothers
发明人： Anthony F. Beier , Janine K. Kardokus , Susan D. Strothers
IPC分类号： C23C1434
CPC分类号： B23K20/023 , B23K20/002 , C23C14/3407 , Y10T428/12743 , Y10T428/12764 , Y10T428/12771 , Y10T428/12806 , Y10T428/12812 , Y10T428/1284 , Y10T428/12903
摘要： Described is a method for producing a diffusion bonded sputtering assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.
摘要翻译：描述了一种制造扩散接合溅射组件的方法，其被热处理以沉淀硬化背板而不损害扩散粘合完整性。该方法包括对合金溶液进行热处理和淬火，并在扩散粘合到目标物之后人工老化背板材料。扩散接合溅射靶组件的热处理包括通过在淬火中部分浸渍淬火并且在扩散接合之后进行，并允许在背板中的各种温度。

6. 发明授权

US06451185B2 Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same 有权
标题翻译：具有沉淀硬化背板的扩散接合溅射靶组件及其制造方法
公开(公告)号：US06451185B2
公开(公告)日：2002-09-17
申请号：US09902071
申请日：2001-07-09
申请人： Anthony F. Beier , Janine K. Kardokus , Susan D. Strothers
发明人： Anthony F. Beier , Janine K. Kardokus , Susan D. Strothers
IPC分类号： C23C1434
CPC分类号： B23K20/002 , B23K20/023 , C23C14/3407 , Y10T428/12743 , Y10T428/12771 , Y10T428/12785 , Y10T428/12806 , Y10T428/12812 , Y10T428/1284 , Y10T428/12903
摘要： Described is a method for producing a diffusion bonded sputtering target assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.
摘要翻译：描述了一种用于制造扩散接合溅射靶组件的方法，其被热处理以沉淀硬化背板而不损害扩散粘合完整性。该方法包括对合金溶液进行热处理和淬火，并在扩散粘合到目标物之后人工老化背板材料。扩散接合溅射靶组件的热处理包括通过在淬火中部分浸渍淬火并且在扩散接合之后进行，并允许在背板中的各种温度。

7. 发明申请

US20080173541A1 Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling 审中-公开
标题翻译：降低涡流，提高电阻和电阻率以及增强冷却的目标设计和相关方法
公开(公告)号：US20080173541A1
公开(公告)日：2008-07-24
申请号：US11656705
申请日：2007-01-22
申请人： Eal Lee , Werner Hort , Janine Kardokus , Susan D. Strothers , Kim Jaeyeon
发明人： Eal Lee , Werner Hort , Janine Kardokus , Susan D. Strothers , Kim Jaeyeon
IPC分类号： C23C14/00 , B23P11/00
CPC分类号： C23C14/3407 , H01J37/3426 , H01J37/3491 , Y10T29/49826
摘要： A sputtering target is described herein that comprises: a) a target surface component comprising a target material; b) a core backing component having a coupling surface and a back surface, wherein the coupling surface is coupled to the target surface component; and c) at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component comprising a backing material and having a coupling surface and a back surface; c) providing at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component; and d) coupling the surface target material to the coupling surface of the core backing material.
摘要翻译：本文描述了一种溅射靶，其包括：a）包含目标材料的靶表面组分; b）具有联接表面和后表面的芯背衬部件，其中所述耦合表面耦合到所述目标表面部件; 以及c）至少一个表面区域特征，其耦合到或位于所述芯背衬部件的后表面中，其中所述表面区域特征增加所述芯背衬部件的电阻，电阻率或其组合。还描述了形成溅射靶的方法，其包括：a）提供包含表面材料的靶表面组分; b）提供包括背衬材料并具有耦合表面和背表面的芯背衬部件; c）提供耦合到或位于所述芯背衬组件的后表面中的至少一个表面区域特征，其中所述表面区域特征增加所述芯背衬组件的电阻，电阻率或其组合; 以及d）将表面目标材料耦合到芯衬垫材料的耦合表面。

8. 发明授权

US07767043B2 Copper sputtering targets and methods of forming copper sputtering targets 有权
标题翻译：铜溅射靶和形成铜溅射靶的方法
公开(公告)号：US07767043B2
公开(公告)日：2010-08-03
申请号：US12235427
申请日：2008-09-22
申请人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
发明人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
IPC分类号： B22D17/00 , C22F1/08 , C22C14/00
CPC分类号： C23C14/3414 , B21C23/001
摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
摘要翻译：本发明包括含铜溅射靶。目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。本发明还包括生产粘结和单片铜和铜合金靶的方法。

9. 发明申请

US20120273097A1 SPUTTERING TARGETS, SPUTTER REACTORS, METHODS OF FORMING CAST INGOTS, AND METHODS OF FORMING METALLIC ARTICLES 审中-公开
标题翻译：溅射靶，溅射反应器，形成铸件的方法和形成金属制品的方法
公开(公告)号：US20120273097A1
公开(公告)日：2012-11-01
申请号：US13546705
申请日：2012-07-11
申请人： Chi tse Wu , Wuwen Yi , Frederick B. Hidden , Susan D. Strothers
发明人： Chi tse Wu , Wuwen Yi , Frederick B. Hidden , Susan D. Strothers
IPC分类号： C22F1/08 , C21D8/00
CPC分类号： H01J37/3423 , B21J5/00 , B21J5/02 , B21K21/00 , B22D7/00 , B22D27/08 , C22F1/00 , C22F1/08 , C23C14/3407 , C23C14/3414 , H01J37/3408
摘要： The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
摘要翻译：本发明包括形成金属制品的方法。提供金属材料锭，这种锭具有初始厚度。铸锭经受热锻。将热锻的产品淬火以在金属材料内固定小于250微米的平均粒度。淬火材料可以形成三维物理气相沉积靶。本发明还包括一种形成铸锭的方法。在特定方面，铸锭是高纯度铜材料。本发明还包括物理气相沉积靶和磁控管等离子体溅射反应器组件。

10. 发明申请

US20090101496A1 COPPER PHYSICAL VAPOR DEPOSITION TARGETS AND METHODS OF MAKING COPPER PHYSICAL VAPOR DEPOSITION TARGETS 审中-公开
标题翻译：铜物理蒸气沉积目标和制备铜物理蒸气沉积目标的方法
公开(公告)号：US20090101496A1
公开(公告)日：2009-04-23
申请号：US12336935
申请日：2008-12-17
申请人： Wuwen Yi , Susan D. Strothers
发明人： Wuwen Yi , Susan D. Strothers
IPC分类号： C23C30/00
CPC分类号： C23C14/3414 , C22C9/00
摘要： The invention includes physical vapor deposition targets formed of copper material and having an average grain size of less than 50 microns and an absence of course-grain areas throughout the target. The invention encompasses a physical vapor deposition target, of a copper material and having an average grain size of less than 50 microns with a grain size standard deviation of fess than 5% (1−σ) throughout the target. The copper material is selected from copper alloys and high-purity copper material containing greater than or equal to 99.9999% copper, by weight. The invention includes methods of forming copper physical vapor deposition targets. An as-cast copper material is subjected to a multistage processing. Each stage of the multistage processing includes a heating event, a hot-forging event, and a water quenching event. After the multistage processing the copper material is roiled to produce a target blank.
摘要翻译：本发明包括由铜材料形成并且具有小于50微米的平均晶粒尺寸并且整个靶材上不存在过程晶粒区域的物理气相沉积靶。本发明包括铜材料的物理气相沉积靶，其平均粒度小于50微米，整个靶材的晶粒尺寸标准偏差不超过5％（1-σ）。铜材料选自铜合金和含有大于或等于99.9999重量％铜的高纯度铜材料。本发明包括形成铜物理气相沉积靶的方法。铸造铜材料经受多级处理。多级处理的每个阶段包括加热事件，热锻事件和水淬事件。在多级处理之后，铜材料被卷成以产生目标坯料。

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