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1. 发明申请

US20060278520A1 Use of DC magnetron sputtering systems 审中-公开
标题翻译：使用直流磁控溅射系统
公开(公告)号：US20060278520A1
公开(公告)日：2006-12-14
申请号：US11150900
申请日：2005-06-13
申请人： Eal Lee , Robert Prater , Nicole Truong , Jaeyeon Kim
发明人： Eal Lee , Robert Prater , Nicole Truong , Jaeyeon Kim
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/3407 , C23C14/564
摘要： A DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target that comprises at least one sidewall; a plasma ignition arc; and a catch-ring coupled to and located around the shield. Another DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Yet another DC magnetron sputtering system is described herein that comprises an anodic shield comprising at least one protrusion; a cathodic target comprising at least one recess, cavity or a combination thereof; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the at least one protrusion coupled to the anodic shield and the at least one protrusion, recess or cavity. Methods are also provided whereby the gas turbulence effect is mitigated, such methods including providing an anodic shield; providing a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Additional methods include providing an anodic shield; providing a cathodic target that comprises at least one sidewall; providing a catch-ring coupled to and around the shield; and initiating a plasma ignition arc.
摘要翻译：描述了包括阳极屏蔽的直流磁控溅射系统; 包括至少一个侧壁的阴极靶; 等离子体点火电弧; 以及联接到并位于护罩周围的卡环。描述了包括阳极屏蔽的另一个DC磁控溅射系统; 包括至少一个凹部，空腔或其组合以及至少一个突起的阴极靶; 以及等离子体点火电弧，由此电弧位于阳极屏蔽和至少一个凹部，空腔或其组合之间的最小阻力点处，该至少一个突起或其组合。本文描述了另一个DC磁控溅射系统，其包括包括至少一个突起的阳极屏蔽; 包括至少一个凹部，空腔或其组合的阴极靶; 和等离子体点火电弧，由此电弧位于耦合到阳极屏蔽的至少一个突起与至少一个突起，凹部或空腔之间的最小阻力点。还提供了减轻气体紊流效应的方法，包括提供阳极屏蔽的方法; 提供阴极靶，其包括至少一个凹部，空腔或其组合以及至少一个突起; 以及启动等离子体点火电弧，由此所述电弧位于所述阳极屏蔽和所述至少一个凹部，空腔或其组合之间的最小阻力点处，所述至少一个突起或其组合。附加方法包括提供阳极屏蔽; 提供包括至少一个侧壁的阴极靶; 提供耦合到屏蔽件周围的卡环; 并启动等离子体点火电弧。

2. 发明申请

US20060213769A1 Coils utilized in vapor deposition applications and methods of production 有权
标题翻译：气相沉积应用中使用的线圈和生产方法
公开(公告)号：US20060213769A1
公开(公告)日：2006-09-28
申请号：US11086022
申请日：2005-03-22
申请人： Eal Lee , Nicole Truong , Robert Prater , Norm Sand
发明人： Eal Lee , Nicole Truong , Robert Prater , Norm Sand
IPC分类号： C23C14/00
CPC分类号： H01J37/3405 , C23C14/34 , C23C14/564 , H01J37/321 , H01J37/32477 , H01J37/32541 , H01J37/32651 , H01J37/3438
摘要： A coil assembly for utilization in a vapor deposition system is described herein that includes at least one subject coil having a length, a height, an inside edge, an outside edge and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the thickness of the subject coil is reduced by at least 20% as compared to a reference coil. A coil assembly is also described herein for utilization in a vapor deposition system that includes at least one subject coil having a length, a height, an inside edge, an outside edge, and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the height of at least part of the subject coil is reduced by at least 20% as compared to the height of a reference coil.
摘要翻译：本文描述了一种用于气相沉积系统中的线圈组件，其包括具有长度，高度，内边缘，外边缘和厚度的至少一个主体线圈，其中被测线圈的厚度被测量为距离在所述内边缘和所述外边缘之间，并且其中所述主体线圈的至少部分厚度与参考线圈相比降低至少20％。本文还描述了一种用于气相沉积系统中的线圈组件，其包括具有长度，高度，内边缘，外边缘和厚度的至少一个主体线圈，其中被测线圈的厚度被测量为内边缘和外边缘之间的距离，并且其中至少部分被检体线圈的高度的至少一部分与参考线圈的高度相比降低至少20％。

3. 发明授权

US09659758B2 Coils utilized in vapor deposition applications and methods of production 有权
公开(公告)号：US09659758B2
公开(公告)日：2017-05-23
申请号：US11086022
申请日：2005-03-22
申请人： Eal Lee , Nicole Truong , Robert Prater , Norm Sand
发明人： Eal Lee , Nicole Truong , Robert Prater , Norm Sand
IPC分类号： C23C14/34 , H01J37/34 , H01J37/32 , C23C14/56
CPC分类号： H01J37/3405 , C23C14/34 , C23C14/564 , H01J37/321 , H01J37/32477 , H01J37/32541 , H01J37/32651 , H01J37/3438
摘要： A coil assembly for utilization in a vapor deposition system is described herein that includes at least one subject coil having a length, a height, an inside edge, an outside edge and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the thickness of the subject coil is reduced by at least 20% as compared to a reference coil. A coil assembly is also described herein for utilization in a vapor deposition system that includes at least one subject coil having a length, a height, an inside edge, an outside edge, and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the height of at least part of the subject coil is reduced by at least 20% as compared to the height of a reference coil.

4. 发明申请

US20050238889A1 Layered components, materials, methods of production and uses thereof 审中-公开
标题翻译：分层的部件，材料，生产方法及其用途
公开(公告)号：US20050238889A1
公开(公告)日：2005-10-27
申请号：US10875050
申请日：2004-06-22
申请人： Nancy Iwamoto , Joseph Kennedy , Eal Lee
发明人： Nancy Iwamoto , Joseph Kennedy , Eal Lee
IPC分类号： B32B3/26 , B32B9/04 , C07C13/28 , H01L21/31 , H01L21/316 , H01L21/768 , H05K1/03 , H05K1/16 , H05K3/00
CPC分类号： H01L21/02203 , H01L21/02118 , H01L21/02126 , H01L21/02205 , H01L21/0228 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L21/76841 , H01L2221/1047 , H05K1/036 , H05K1/162 , H05K3/0011 , H05K2201/0116 , H05K2203/1147 , Y10T428/249953 , Y10T428/31663
摘要： A layered component is described herein that includes: a substrate; a dielectric material having a plurality of pores, wherein the material is coupled to the substrate; and a self-assembled diffusion blocking material coupled to the dielectric material, wherein the diffusion blocking material is attracted to the dielectric material. A layered component is also described herein that includes: a substrate; a dielectric material having a plurality of pores, wherein the material is coupled to the substrate; and a self-assembled diffusion blocking material coupled to the dielectric material, wherein the diffusion blocking material reacts with the dielectric material. A layered material is described that includes: a) a porous material comprising a porous surface; and b) a layer of blocking material comprising reactive functionalities coupled to the porous surface, wherein the interaction of the reactive functionalities with the porous material forms a diffusion blocking layer. Methods are also described of minimizing the diffusion of metal atoms, reactive etchants or CVD/ALD precursor materials into a material having a plurality of pores are disclosed herein that include: a) providing a precursor material that comprises a carbon-including material; b) providing a solvent carrier solution; c) combining the precursor material and the solvent carrier solution to form a diffusion blocking reactive solution; and d) applying the diffusion blocking reactive solution to the material having a plurality of pores to form a diffusion blocking material.
摘要翻译：本文描述了一种分层组件，其包括：基底; 具有多个孔的介电材料，其中所述材料耦合到所述基底; 以及耦合到电介质材料的自组装扩散阻挡材料，其中扩散阻挡材料被吸引到电介质材料。本文还描述了分层组件，其包括：基底; 具有多个孔的介电材料，其中所述材料耦合到所述基底; 以及耦合到所述介电材料的自组装扩散阻挡材料，其中所述扩散阻挡材料与所述电介质材料反应。描述了层状材料，其包括：a）包含多孔表面的多孔材料; 和b）包含耦合到多孔表面的反应性官能团的阻挡材料层，其中反应性官能团与多孔材料的相互作用形成扩散阻挡层。还描述了使金属原子，反应性蚀刻剂或CVD / ALD前体材料扩散到具有多个孔的材料中的扩散的方法，其包括：a）提供包含含碳材料的前体材料; b）提供溶剂载体溶液; c）将前体材料和溶剂载体溶液组合以形成扩散阻断反应溶液; 以及d）将扩散阻挡反应性溶液施加到具有多个孔的材料上以形成扩散阻挡材料。

5. 发明申请

US20080173541A1 Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling 审中-公开
标题翻译：降低涡流，提高电阻和电阻率以及增强冷却的目标设计和相关方法
公开(公告)号：US20080173541A1
公开(公告)日：2008-07-24
申请号：US11656705
申请日：2007-01-22
申请人： Eal Lee , Werner Hort , Janine Kardokus , Susan D. Strothers , Kim Jaeyeon
发明人： Eal Lee , Werner Hort , Janine Kardokus , Susan D. Strothers , Kim Jaeyeon
IPC分类号： C23C14/00 , B23P11/00
CPC分类号： C23C14/3407 , H01J37/3426 , H01J37/3491 , Y10T29/49826
摘要： A sputtering target is described herein that comprises: a) a target surface component comprising a target material; b) a core backing component having a coupling surface and a back surface, wherein the coupling surface is coupled to the target surface component; and c) at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component comprising a backing material and having a coupling surface and a back surface; c) providing at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component; and d) coupling the surface target material to the coupling surface of the core backing material.
摘要翻译：本文描述了一种溅射靶，其包括：a）包含目标材料的靶表面组分; b）具有联接表面和后表面的芯背衬部件，其中所述耦合表面耦合到所述目标表面部件; 以及c）至少一个表面区域特征，其耦合到或位于所述芯背衬部件的后表面中，其中所述表面区域特征增加所述芯背衬部件的电阻，电阻率或其组合。还描述了形成溅射靶的方法，其包括：a）提供包含表面材料的靶表面组分; b）提供包括背衬材料并具有耦合表面和背表面的芯背衬部件; c）提供耦合到或位于所述芯背衬组件的后表面中的至少一个表面区域特征，其中所述表面区域特征增加所述芯背衬组件的电阻，电阻率或其组合; 以及d）将表面目标材料耦合到芯衬垫材料的耦合表面。

6. 发明申请

US20070039817A1 Copper-containing pvd targets and methods for their manufacture 审中-公开
标题翻译：含铜的目标及其制造方法
公开(公告)号：US20070039817A1
公开(公告)日：2007-02-22
申请号：US10549401
申请日：2004-08-20
申请人： Brian Daniels , Michael Thomas , Susand Strothers , Wuwen Yi , Anil Bhanap , Eal Lee , Cara Hutchinson , Christie Hausman
发明人： Brian Daniels , Michael Thomas , Susand Strothers , Wuwen Yi , Anil Bhanap , Eal Lee , Cara Hutchinson , Christie Hausman
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： C23C14/3414 , B32B15/012 , C23C14/16 , C23C14/185 , C23C14/3407 , H01L21/2855 , H01L21/76841 , H01L21/76843 , H01L21/76871 , H01L21/76877 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： The invention includes a physical vapor deposition target containing copper and at least two additional elements selected from Ag, Al, As, Au, B, Be, Ca, Cd, Co, Cr, Fe, Ga, Ge, Hf, Hg, In, Ir, Li, Mg, Mn, Nb, Ni, Pb, Pd, Pt, Sb, Sc, Si, Sn, Ta, Te, Ti, V, W, Zn and Zr, a total amount of the at least two additional elements being from 100 ppm to 10 atomic %. The invention additionally includes thin films and interconnects which contain the mixture of copper and at least two added elements. The invention also includes forming a copper-containing target. A mixture of copper and two or more elements is formed. The mixture is cast by melting and is subsequently cooled to form a billet which is worked utilizing one or both of equal channel angular extrusion and thermomechanical processing to form a target.
摘要翻译：本发明包括含有铜和至少两种选自Ag，Al，As，Au，B，Be，Ca，Cd，Co，Cr，Fe，Ga，Ge，Hf，Hg，In， Ir，Li，Mg，Mn，Nb，Ni，Pb，Pd，Pt，Sb，Sc，Si，Sn，Ta，Te，Ti，V，W，Zn和Zr中的至少两种添加元素为100〜10原子％。本发明还包括含有铜和至少两种添加元素的混合物的薄膜和互连。本发明还包括形成含铜靶。形成铜和两种或更多种元素的混合物。混合物通过熔融铸造并随后冷却以形成坯料，其利用等通道角挤压和热机械加工中的一种或两种来形成靶。

7. 发明申请

US20050156315A1 Thin films, structures having thin films, and methods of forming thin films 审中-公开
标题翻译：薄膜，具有薄膜的结构以及薄膜形成方法
公开(公告)号：US20050156315A1
公开(公告)日：2005-07-21
申请号：US10502232
申请日：2003-01-24
申请人： Eal Lee , Michael Thomas
发明人： Eal Lee , Michael Thomas
IPC分类号： C23C14/06 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L23/532 , H01L29/40
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The invention described herein relates to new titanium-comprising materials which can be utilized for forming titanium alloy barrier layers for Cu applications. Titanium alloy sputtering targets can be reactively sputtered in a nitrogen-comprising sputtering gas atmosphere to from titanium alloy nitride film, or alternatively in a nitrogen-comprising and oxygen-comprising atmosphere to form titanium alloy oxygen nitrogen thin film. The thin films formed in accordance with the present invention can contain a non-columnar grain structure, low electrical resistivity, high chemical stability, and barrier layer properties comparable or exceeding those of TaN.
摘要翻译：本文所述的发明涉及可用于形成用于Cu应用的钛合金阻挡层的新的含钛材料。钛合金溅射靶可以在含氮溅射气体气氛中从钛合金氮化膜或者在含氮和含氧气氛中反应溅射形成钛合金氧氮薄膜。根据本发明形成的薄膜可以包含与TaN相当或超过TaN的非柱状晶粒结构，低电阻率，高化学稳定性和阻挡层性质。

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