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1. 发明授权

US07767043B2 Copper sputtering targets and methods of forming copper sputtering targets 有权
标题翻译：铜溅射靶和形成铜溅射靶的方法
公开(公告)号：US07767043B2
公开(公告)日：2010-08-03
申请号：US12235427
申请日：2008-09-22
申请人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
发明人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
IPC分类号： B22D17/00 , C22F1/08 , C22C14/00
CPC分类号： C23C14/3414 , B21C23/001
摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
摘要翻译：本发明包括含铜溅射靶。目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。本发明还包括生产粘结和单片铜和铜合金靶的方法。

2. 发明申请

US20090020192A1 Copper Sputtering Targets and Methods of Forming Copper Sputtering Targets 有权
标题翻译：铜溅射靶和形成铜溅射靶的方法
公开(公告)号：US20090020192A1
公开(公告)日：2009-01-22
申请号：US12235427
申请日：2008-09-22
申请人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
发明人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
IPC分类号： C22F1/08
CPC分类号： C23C14/3414 , B21C23/001
摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
摘要翻译：本发明包括含铜溅射靶。目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括铜合金整体和结合的溅射靶，其基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。本发明还包括生产粘结和单片铜和铜合金靶的方法。

3. 发明申请

US20100059147A9 Copper Sputtering Targets and Methods of Forming Copper Sputtering Targets 有权
标题翻译：铜溅射靶和形成铜溅射靶的方法
公开(公告)号：US20100059147A9
公开(公告)日：2010-03-11
申请号：US12235427
申请日：2008-09-22
申请人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
发明人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
IPC分类号： C22F1/08
CPC分类号： C23C14/3414 , B21C23/001
摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
摘要翻译：本发明包括含铜溅射靶。目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。本发明还包括生产粘结和单片铜和铜合金靶的方法。

4. 发明授权

US06946039B1 Physical vapor deposition targets, and methods of fabricating metallic materials 失效
标题翻译：物理气相沉积目标，以及制造金属材料的方法
公开(公告)号：US06946039B1
公开(公告)日：2005-09-20
申请号：US09705101
申请日：2000-11-02
申请人： Vladimir M. Segal , Stephane Ferrasse , Frank Alford
发明人： Vladimir M. Segal , Stephane Ferrasse , Frank Alford
IPC分类号： C22F1/04 , C22C21/12 , C22F1/00 , C22F1/08 , C23C14/34 , H01J37/34 , H01L21/285 , C22C11/00
CPC分类号： C23C14/3414 , B21C23/001 , B21J1/025 , C22F1/00
摘要： The invention includes a physical vapor deposition target composed of a face centered cubic unit cell metal or alloy and having a uniform grain size less than 30 microns, preferably less than 1 micron; and a uniform axial or planar texture. Also described is a method for making sputtering targets. The method can comprise billet preparation; equal channel angular extrusion with a prescribed route and number of passes; and cross-rolling or forging subsequent to the equal channel angular extrusion.
摘要翻译：本发明包括由面心立方晶胞金属或合金组成并具有小于30微米，优选小于1微米的均匀晶粒尺寸的物理气相沉积靶; 和均匀的轴向或平面<220>纹理。还描述了制造溅射靶的方法。该方法可以包括坯料制备; 具有规定路线和通行数的等通道角挤压; 并在等通道角挤压之后进行交叉轧制或锻造。

5. 发明授权

US07017382B2 Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions 有权
公开(公告)号：US07017382B2
公开(公告)日：2006-03-28
申请号：US10194022
申请日：2002-07-11
申请人： Vladimir M. Segal , Jianxing Li , Frank Alford , Stephane Ferrasse
发明人： Vladimir M. Segal , Jianxing Li , Frank Alford , Stephane Ferrasse
IPC分类号： B21C23/00
CPC分类号： C23C14/3414 , C22F1/04 , Y10S72/70
摘要： The invention includes a method of forming an aluminum-comprising physical vapor deposition target. An aluminum-comprising mass is deformed by equal channel angular extrusion. The mass is at least 99.99% aluminum and further comprises less than or equal to about 1,000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Tl, Tm, V, W, Y, Yb, Zn and Zr. After the aluminum-comprising mass is deformed, the mass is shaped into at least a portion of a sputtering target. The invention also encompasses a physical vapor deposition target consisting essentially of aluminum and less than or equal to 1,000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Tl, Tm, V, W, Y, Yb, Zn and Zr. Additionally, the invention encompasses thin films.

6. 发明授权

US06908517B2 Methods of fabricating metallic materials 失效
标题翻译：制造金属材料的方法
公开(公告)号：US06908517B2
公开(公告)日：2005-06-21
申请号：US10171714
申请日：2002-06-12
申请人： Vladimir M. Segal , Stephane Ferrasse , Frank Alford
发明人： Vladimir M. Segal , Stephane Ferrasse , Frank Alford
IPC分类号： C22F1/04 , C22C21/12 , C22F1/00 , C22F1/08 , C23C14/34 , H01J37/34 , H01L21/285 , B21B41/02 , B21C23/00
CPC分类号： C23C14/3414 , B21C23/001 , B21J1/025 , C22F1/00
摘要： The invention includes a physical vapor deposition target composed of a face centered cubic unit cell metal or alloy and having a uniform grain size less than 30 microns, preferably less than 1 micron; and a uniform axial or planar texture. Also described is a method for making sputtering targets. The method can comprise billet preparation; equal channel angular extrusion with a prescribed route and number of passes; and cross-rolling or forging subsequent to the equal channel angular extrusion.
摘要翻译：本发明包括由面心立方晶胞金属或合金组成并具有小于30微米，优选小于1微米的均匀晶粒尺寸的物理气相沉积靶; 和均匀的轴向或平面<220>纹理。还描述了制造溅射靶的方法。该方法可以包括坯料制备; 具有规定路线和通行数的等通道角挤压; 并在等通道角挤压之后进行交叉轧制或锻造。

7. 发明申请

US20090113977A1 METHOD AND APPARATUS FOR FORMING OF PANELS AND SIMILAR PARTS 有权
标题翻译：用于形成面板和类似部件的方法和装置
公开(公告)号：US20090113977A1
公开(公告)日：2009-05-07
申请号：US12263164
申请日：2008-10-31
申请人： Vladimir M. Segal
发明人： Vladimir M. Segal
IPC分类号： B21D22/00
CPC分类号： B21J7/18 , B21J13/02 , B21K23/00
摘要： The invention presents method and apparatus for forming of large thin panels and similar parts having integral stiffeners at one side of a board. The method includes progressive forming of preheated billets into sculptured dies of corresponding length and width by a forging die of substantially identical width and short length with slightly inclined and flat forging surfaces providing a smoothly convergent working zone, and a periodical transfer of the sculptured die into the working zone between successive strokes of the forging die. Control of the material flow is performed by selection of a ratio of the working zone length to the billet thickness, variable contact friction at both dies and application of additional compressive forces to the billet at ends of the working zone. For semi-continuous processing of very long parts, the sculptured die is composed by plurality of sectioned elements. Embodiments of the method are conditions of isothermal and super plastic forming of light alloys with sub-micron grained structures.
摘要翻译：本发明提出了用于在板的一侧形成大型薄板和具有整体加强件的类似部件的方法和装置。该方法包括通过具有基本相同的宽度和短长度的锻造模具将预热的坯料逐渐成型为具有相应长度和宽度的雕刻模具，其具有略微倾斜和平坦的锻造表面，其提供平稳收敛的工作区域，并且将雕刻的模具周期性地转移到锻造模具的连续冲程之间的工作区域。通过选择工作区域长度与坯料厚度的比率，两个模具处的可变接触摩擦力以及对工作区域的端部处的坯料施加额外的压缩力来进行材料流动的控制。对于非常长的部件的半连续加工，雕刻的模具由多个分段元件组成。该方法的实施例是具有亚微米颗粒结构的轻合金的等温和超塑性成形条件。

8. 发明授权

US5628861A Method for adhesively bonded laminate for use in an electrical apparatus such as a transformer, generator, or motor 失效
标题翻译：用于诸如变压器，发电机或电动机的电气设备中的粘合层压板的方法
公开(公告)号：US5628861A
公开(公告)日：1997-05-13
申请号：US377841
申请日：1995-01-25
申请人： Vladimir M. Segal
发明人： Vladimir M. Segal
IPC分类号： B05D1/28 , H01F27/245 , H01F41/02 , B05D5/02 , B05D5/10 , B32B31/12
CPC分类号： B32B37/1292 , H01F27/245 , H01F41/0233 , B32B2307/208 , Y10T156/1702 , Y10T156/18 , Y10T29/49078
摘要： A method for manufacturing a laminate comprising at least two sheets of magnetic material is disclosed. The laminate may be used to form a stacked transformer core. The method increases the productivity of the core-stacking process, decreases the core loss destruction factor, decreases total core loss, decreases acoustic noise generated by the electrical device employing the laminate, and does all of this in a manner which is commercially practical. The method comprises applying an adhesive, preferably a hot melt adhesive, in a pattern of thin beads onto one side of a first lamina or sheet of magnetic material, the pattern comprising a plurality of lines, the lines being substantially parallel to each other and substantially perpendicular to a direction of grain orientation or rolling direction of the lamina. A second lamina is then stacked onto the one side of the first lamina, and then a compressive force is applied to specified areas of the laminate. The spacing between the respective lines of adhesive is preferably 1-20 millimeters and, for an approximate diameter (D) of each bead, the spacing (S) between the beads of each line is preferably between D and 2D.
摘要翻译：公开了一种用于制造包括至少两片磁性材料的叠层的方法。层压板可用于形成堆叠的变压器芯。该方法提高了芯堆叠过程的生产率，降低了芯损耗破坏因子，降低了总磁芯损耗，降低了采用层压板的电气装置产生的声音噪声，并且以商业上可行的方式进行了所有这一切。该方法包括以薄珠的图案将粘合剂（优选热熔粘合剂）施加到第一层或磁性材料片的一侧上，该图形包括多条线，该线基本上彼此平行且基本上彼此平行垂直于晶片取向方向或层板的滚动方向。然后将第二层层叠在第一层的一侧上，然后将压缩力施加到层压板的特定区域。各粘合剂线之间的间距优选为1-20毫米，对于每个珠粒的近似直径（D），每条线条之间的间距（S）优选在D和2D之间。

9. 发明授权

US07380432B2 Method and apparatus for equal channel angular extrusion of flat billets 有权
标题翻译：平面坯料等通道角挤压的方法和装置
公开(公告)号：US07380432B2
公开(公告)日：2008-06-03
申请号：US11702829
申请日：2007-02-06
申请人： Vladimir M. Segal
发明人： Vladimir M. Segal
IPC分类号： B21C35/00
CPC分类号： B21C23/01 , B21C23/001
摘要： The invention comprises a method and apparatus for equal channel angular extrusion (ECAE) of flat billets to control material structure and properties. The improvements of the method include the special systems of billet orientations, billet lubrication, billet ejection from dies, and a press/die control system those eliminate surface cracks, flashes and billet reshaping or deburring between passes. Therefore, multi-pass ECAE becomes a cost-effective industrial operation and may be applied to large billets.
摘要翻译：本发明包括用于控制材料结构和性能的平面坯料的等通道角挤压（ECAE）的方法和装置。该方法的改进包括坯料取向，坯料润滑，模具坯料喷射的特殊系统以及消除表面裂纹，闪光和通道之间的坯料重塑或去毛刺的压力/模具控制系统。因此，多通道ECAE成为具有成本效益的工业操作，可适用于大型坯料。

10. 发明授权

US5850755A Method and apparatus for intensive plastic deformation of flat billets 失效
标题翻译：平板坯强化塑性变形方法及装置
公开(公告)号：US5850755A
公开(公告)日：1998-12-22
申请号：US385334
申请日：1995-02-08
申请人： Vladimir M. Segal
发明人： Vladimir M. Segal
IPC分类号： B21B1/02 , B21B1/38 , B21C23/00 , C22F1/00 , C22F1/04 , B21C23/02
CPC分类号： C22F1/04 , B21C23/00 , B21C23/001 , C22F1/00 , B21B1/38 , B21B2001/022
摘要： Methods and apparatus are described for the plastic deformation of flat rectangular billets. Simultaneous extrusion of two flat rectangular billets through a die having channels of equal cross-sectional area alters billet material structure, texture, and physicomechanical properties without altering billet dimensions. The extrusion system of the present invention prolongs die lifetime, increases punch stability, decreases punch working load and pressure requirements, eliminates the difficulties associated with lubricating movable parts of the die under high pressure and temperature, optimizes use of press space, and provides for automatic and independent ejection of extruded billets from the die. The methods of plastic deformation processing of flat rectangular billets in the present invention allow for the production of a variety of structural, textural, and physicomechanical properties previously unobtainable for large flat rectangular billets.
摘要翻译：描述了扁平矩形坯料的塑性变形的方法和装置。通过具有相同截面面积的通道的模具同时挤压两个坯料坯料结构，质地和物理机械性能，而不改变坯料尺寸。本发明的挤出系统延长了模具寿命，增加了冲头的稳定性，减少了冲压加工负荷和压力要求，消除了在高压和高温下润滑模具的可移动部件所带来的困难，优化了冲压空间的使用，并提供了自动化并且将模具中的挤出坯料独立地排出。本发明中的扁平矩形坯料的塑性变形处理方法允许生产以前对于大型扁平矩形坯料无法获得的各种结构，结构和物理机械性能。

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