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    • 6. 发明授权
    • Method for fabricating dual-metal gate device
    • 双金属栅极器件制造方法
    • US08178401B2
    • 2012-05-15
    • US11530058
    • 2006-09-08
    • David C. GilmerSrikanth B. SamavedamPhilip J. Tobin
    • David C. GilmerSrikanth B. SamavedamPhilip J. Tobin
    • H01L21/8238
    • H01L21/823842
    • A method of fabricating a MOS transistor that comprises a dual-metal gate that is formed from heterotypical metals. A gate dielectric (34), such as HfO2, is deposited on a semiconductor substrate. A sacrificial layer (35), is next deposited over the gate dielectric. The sacrificial layer is patterned so that the gate dielectric over a first (pMOS, for example) area (32) of the substrate is exposed and gate dielectric over a second (nMOS, for example) area (33) of the substrate continues to be protected by the sacrificial layer. A first gate conductor material (51) is deposited over the remaining sacrificial area and over the exposed gate dielectric. The first gate conductor material is patterned so that first gate conductor material over the second area of the substrate is etched away. The sacrificial layer over the second area prevents damage to the underlying dielectric material as the first gate conductor material is removed.
    • 一种制造包括由异型金属形成的双金属栅极的MOS晶体管的方法。 诸如HfO 2的栅极电介质(34)沉积在半导体衬底上。 牺牲层(35)接着沉积在栅极电介质上。 牺牲层被图案化,使得衬底的第一(pMOS,例如)区域(32)上的栅极电介质被暴露,并且衬底的第二(nMOS,例如)区域(33)上的栅极电介质继续是 受牺牲层保护。 第一栅极导体材料(51)沉积在剩余的牺牲区域上并暴露在栅极电介质上。 图案化第一栅极导体材料,使得衬底的第二区域上方的第一栅极导体材料被蚀刻掉。 第二区域上的牺牲层防止在去除第一栅极导体材料时损坏下面的介电材料。
    • 10. 发明授权
    • Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities
    • 电子器件包括含有含有一种或多种杂质的含金属层的栅电极
    • US07868389B2
    • 2011-01-11
    • US11928314
    • 2007-10-30
    • Olubunmi O. AdetutuDavid C. GilmerPhilip J. Tobin
    • Olubunmi O. AdetutuDavid C. GilmerPhilip J. Tobin
    • H01L29/76
    • H01L21/823857H01L21/823842
    • One or more impurities may be incorporated within a metal-containing layer of a metal-containing gate electrode to modify the work function of the metal-containing gate electrode of a transistor can affect the threshold voltage of the transistor. In one embodiment, the impurity can be used in a p-channel transistor to allow the work function of a metal-containing gate electrode to be closer to the valence band for silicon. In another embodiment, the impurity can be used in an n-channel transistor to allow the work function of a metal-containing gate electrode to be closer to the conduction band for silicon. In a particular embodiment, a boron-containing species is implanted into a metal-containing layer within the metal-containing gate electrode within a p-channel transistor, so that the metal-containing gate electrode has a work function closer to the valence band for silicon as compared to the metal-containing gate electrode without the boron-containing species.
    • 可以在含金属的栅电极的含金属层内并入一种或多种杂质以改变晶体管的含金属栅电极的功函数可影响晶体管的阈值电压。 在一个实施例中,杂质可用于p沟道晶体管,以允许含金属的栅电极的功函数更接近硅的价带。 在另一实施例中,杂质可用于n沟道晶体管,以允许含金属的栅电极的功函数更接近于硅的导带。 在一个具体的实施方案中,将含硼物质注入到在p沟道晶体管内的含金属栅电极内的含金属层中,使得含金属栅电极具有更接近价带的功函数 与没有含硼物质的含金属栅电极相比。