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1. 发明申请

US20050277294A1 Method for treating a semiconductor surface to form a metal-containing layer 有权
标题翻译：用于处理半导体表面以形成含金属层的方法
公开(公告)号：US20050277294A1
公开(公告)日：2005-12-15
申请号：US10865268
申请日：2004-06-10
申请人： James Schaeffer , Darrell Roan , Dina Triyoso , Olubunmi Adetutu
发明人： James Schaeffer , Darrell Roan , Dina Triyoso , Olubunmi Adetutu
IPC分类号： C23C16/02 , H01L21/314 , H01L21/316 , H01L21/44
CPC分类号： H01L21/02181 , C23C16/0272 , H01L21/3141 , H01L21/31645
摘要： A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor substrate is treated by forming one or more metals overlying the semiconductor substrate but not completely covering the exposed surface of the semiconductor substrate. The one or more metals enhance nucleation for subsequent material growth. A metal-containing layer is formed on the exposed surface of the semiconductor substrate that has been treated. The treatment of the exposed surface of the semiconductor substrate assists the metal-containing layer to coalesce. In one embodiment, treatment of the exposed surface to enhance nucleation may be performed by spin-coating, atomic layer deposition (ALD), physical layer deposition (PVD), electroplating, or electroless plating. The one or more metals used to treat the exposed surface may include any rare earth or transition metal, such as, for example, hafnium, lanthanum, etc.
摘要翻译：一种用于处理半导体表面以形成含金属层的方法包括提供具有暴露表面的半导体衬底。半导体衬底的暴露表面通过形成覆盖半导体衬底但不完全覆盖半导体衬底的暴露表面的一种或多种金属来处理。一种或多种金属增强成核以用于随后的材料生长。在已经处理的半导体衬底的暴露表面上形成含金属层。半导体衬底的暴露表面的处理有助于含金属层的聚结。在一个实施方案中，可以通过旋涂，原子层沉积（ALD），物理层沉积（PVD），电镀或无电镀来进行暴露表面的处理以增强成核。用于处理暴露表面的一种或多种金属可以包括任何稀土或过渡金属，例如铪，镧等。

2. 发明授权

US07132360B2 Method for treating a semiconductor surface to form a metal-containing layer 有权
标题翻译：用于处理半导体表面以形成含金属层的方法
公开(公告)号：US07132360B2
公开(公告)日：2006-11-07
申请号：US10865268
申请日：2004-06-10
申请人： James K. Schaeffer , Darrell Roan , Dina H. Triyoso , Olubunmi O. Adetutu
发明人： James K. Schaeffer , Darrell Roan , Dina H. Triyoso , Olubunmi O. Adetutu
IPC分类号： H01L21/4763 , H01L21/8344 , H01L21/8242 , H01L21/336
CPC分类号： H01L21/02181 , C23C16/0272 , H01L21/3141 , H01L21/31645
摘要： A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor substrate is treated by forming one or more metals overlying the semiconductor substrate but not completely covering the exposed surface of the semiconductor substrate. The one or more metals enhance nucleation for subsequent material growth. A metal-containing layer is formed on the exposed surface of the semiconductor substrate that has been treated. The treatment of the exposed surface of the semiconductor substrate assists the metal-containing layer to coalesce. In one embodiment, treatment of the exposed surface to enhance nucleation may be performed by spin-coating, atomic layer deposition (ALD), physical layer deposition (PVD), electroplating, or electroless plating. The one or more metals used to treat the exposed surface may include any rare earth or transition metal, such as, for example, hafnium, lanthanum, etc.
摘要翻译：一种用于处理半导体表面以形成含金属层的方法包括提供具有暴露表面的半导体衬底。半导体衬底的暴露表面通过形成覆盖半导体衬底但不完全覆盖半导体衬底的暴露表面的一种或多种金属来处理。一种或多种金属增强成核以用于随后的材料生长。在已经处理的半导体衬底的暴露表面上形成含金属层。半导体衬底的暴露表面的处理有助于含金属层的聚结。在一个实施方案中，可以通过旋涂，原子层沉积（ALD），物理层沉积（PVD），电镀或无电镀来进行暴露表面的处理以增强成核。用于处理暴露表面的一种或多种金属可以包括任何稀土或过渡金属，例如铪，镧等。

3. 发明授权

US07015153B1 Method for forming a layer using a purging gas in a semiconductor process 失效
标题翻译：在半导体工艺中使用吹扫气体形成层的方法
公开(公告)号：US07015153B1
公开(公告)日：2006-03-21
申请号：US10969634
申请日：2004-10-20
申请人： Dina H. Triyoso , Olubunmi O. Adetutu , David C. Gilmer , Darrell Roan , James K. Schaeffer , Philip J. Tobin , Hsing H. Tseng
发明人： Dina H. Triyoso , Olubunmi O. Adetutu , David C. Gilmer , Darrell Roan , James K. Schaeffer , Philip J. Tobin , Hsing H. Tseng
IPC分类号： H01L21/31
CPC分类号： C23C14/0057 , C23C16/30 , C23C16/45527 , H01L21/28229 , H01L21/3141 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method for forming at least a portion of a semiconductor device includes providing a semiconductor substrate, flowing a first precursor gas over the substrate to form a first metal-containing layer overlying the semiconductor substrate, and after completing said step of flowing the first precursor gas, flowing a first deuterium-containing purging gas over the first metal-containing layer to incorporate deuterium into the first metal-containing layer and to also purge the first precursor gas. The method may further include flowing a second precursor gas over the first metal-containing layer to react with the first metal-containing layer to form a metal compound-containing layer, and flowing a second deuterium-containing purging gas over the metal compound-containing layer to incorporate deuterium into the metal compound-containing layer and to also purge the second precursor gas.
摘要翻译：一种用于形成半导体器件的至少一部分的方法包括提供半导体衬底，使第一前体气体流过衬底以形成覆盖半导体衬底的第一含金属层，并且在完成所述第一前体气体流动步骤使第一含氘吹扫气体流过第一含金属层，将氘掺入第一含金属层并且还吹扫第一前体气体。该方法还可以包括使第二前体气体流过第一含金属层以与第一含金属层反应以形成含金属化合物的层，并将第二含氘的净化气体流过含金属化合物的层层将氘并入含金属化合物的层中并且还吹扫第二前体气体。

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