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1. 发明授权

US07615926B2 Low voltage microcavity plasma device and addressable arrays 有权
标题翻译：低电压微腔等离子体器件和可寻址阵列
公开(公告)号：US07615926B2
公开(公告)日：2009-11-10
申请号：US11811892
申请日：2007-06-12
申请人： J. Gary Eden , Sung-Jin Park , Paul A. Tchertchian , Seung Hoon Sung
发明人： J. Gary Eden , Sung-Jin Park , Paul A. Tchertchian , Seung Hoon Sung
IPC分类号： H01J17/49
CPC分类号： H01J11/12
摘要： Microcavity plasma devices and arrays of microcavity plasma devices are provided that have a reduced excitation voltage. A trigger electrode disposed proximate to a microcavity reduce the excitation voltage required between first and second electrodes to ignite a plasma in the microcavity when gas(es) or vapor(s) (or combinations thereof) are contained within the microcavity. The invention also provides symmetrical microplasma devices and arrays of microcavity plasma devices for which current waveforms are the same for each half-cycle of the voltage driving waveform. Additionally, the invention also provides devices that have standoff portions and voids that can reduce cross talk. The devices are preferably also used with a trigger electrode.
摘要翻译：提供微腔等离子体器件和微腔等离子体器件的阵列，其具有降低的激发电压。在微腔内包含气体或蒸汽（或其组合）时，靠近微腔设置的触发电极减小了第一和第二电极之间所需的激发电压，以点燃微腔中的等离子体。本发明还提供对称的微等离子体装置和微腔等离子体装置的阵列，其电流波形对于电压驱动波形的每个半周期是相同的。此外，本发明还提供了具有能够减少串扰的间隔部分和空隙的装置。这些装置优选地也与触发电极一起使用。

2. 发明申请

US20100296978A1 MICROCHANNEL LASER HAVING MICROPLASMA GAIN MEDIA 有权
标题翻译：具有微波增益介质的MICROCHANNEL激光
公开(公告)号：US20100296978A1
公开(公告)日：2010-11-25
申请号：US12682977
申请日：2008-10-27
申请人： Sung-Jin Park , J. Gary Eden , Paoyei Chen , Paul A. Tchertchian , Thomas M. Spinka
发明人： Sung-Jin Park , J. Gary Eden , Paoyei Chen , Paul A. Tchertchian , Thomas M. Spinka
IPC分类号： H01S5/20 , H01S5/187 , B01J19/08
CPC分类号： H01S3/05 , H01S3/03 , H01S3/063 , H01S3/09 , H01S3/0971
摘要： The invention provides microchannel lasers having a microplasma gain medium. Lasers of the invention can be formed in semiconductor materials, and can also be formed in polymer materials. In a microlaser of the invention, high density plasmas are produced in microchannels. The microplasma acts as a gain medium with the electrodes sustaining the plasma in the microchannel. Reflectors are used with the microchannel for obtaining optical feedback to obtain lasing in the microplasma gain medium in devices of the invention for a wide range of atomic and molecular species. Several atomic and molecular gain media will produce sufficiently high gain coefficients that reflectors (mirrors) are not necessary. Microlasers of the invention are based on microplasma generation in channels of various geometries. Preferred embodiment microlaser designs can be fabricated in semiconductor materials, such as Si wafers, by standard photolithographic techniques, or in polymers by replica molding.
摘要翻译：本发明提供了具有微质增益介质的微通道激光器。本发明的激光器可以形成在半导体材料中，也可以形成在聚合物材料中。在本发明的微型激光器中，在微通道中产生高密度等离子体。微量体作为增益介质，其中电极在微通道中维持等离子体。反射器与微通道一起使用以获得光学反馈，以在广泛的原子和分子物种的本发明装置中的微量级增益介质中获得激光。几个原子和分子增益介质将产生足够高的增益系数，反射器（反射镜）不是必需的。本发明的微型扫描器基于各种几何形状的通道中的微量生成。优选实施例微激光器设计可以通过标准光刻技术在半导体材料（例如Si晶片）中或通过复制成型制成聚合物。

3. 发明授权

US08442091B2 Microchannel laser having microplasma gain media 有权
标题翻译：具有微质增益介质的微通道激光器
公开(公告)号：US08442091B2
公开(公告)日：2013-05-14
申请号：US12682977
申请日：2008-10-27
申请人： Sung-Jin Park , J. Gary Eden , Paoyei Chen , Paul A. Tchertchian , Thomas M. Spinka
发明人： Sung-Jin Park , J. Gary Eden , Paoyei Chen , Paul A. Tchertchian , Thomas M. Spinka
IPC分类号： H01S3/091
CPC分类号： H01S3/05 , H01S3/03 , H01S3/063 , H01S3/09 , H01S3/0971
摘要： The invention provides microchannel lasers having a microplasma gain medium. Lasers of the invention can be formed in semiconductor materials, and can also be formed in polymer materials. In a microlaser of the invention, high density plasmas are produced in microchannels. The microplasma acts as a gain medium with the electrodes sustaining the plasma in the microchannel. Reflectors are used with the microchannel for obtaining optical feedback to obtain lasing in the microplasma gain medium in devices of the invention for a wide range of atomic and molecular species. Several atomic and molecular gain media will produce sufficiently high gain coefficients that reflectors (mirrors) are not necessary. Microlasers of the invention are based on microplasma generation in channels of various geometries. Preferred embodiment microlaser designs can be fabricated in semiconductor materials, such as Si wafers, by standard photolithographic techniques, or in polymers by replica molding.
摘要翻译：本发明提供了具有微质增益介质的微通道激光器。本发明的激光器可以形成在半导体材料中，也可以形成在聚合物材料中。在本发明的微型激光器中，在微通道中产生高密度等离子体。微量体作为增益介质，其中电极在微通道中维持等离子体。反射器与微通道一起使用以获得光学反馈，以在广泛的原子和分子物种的本发明装置中的微量级增益介质中获得激光。几个原子和分子增益介质将产生足够高的增益系数，反射器（反射镜）不是必需的。本发明的微型扫描器基于各种几何形状的通道中的微量生成。优选实施例微激光器设计可以通过标准光刻技术在半导体材料（例如Si晶片）中或通过复制成型制成聚合物。

4. 发明授权

US08968668B2 Arrays of metal and metal oxide microplasma devices with defect free oxide 有权
标题翻译：具有缺陷氧化物的金属和金属氧化物微质体装置阵列
公开(公告)号：US08968668B2
公开(公告)日：2015-03-03
申请号：US13527842
申请日：2012-06-20
申请人： J. Gary Eden , Sung-Jin Park , Jin Hoon Cho , Seung Hoon Sung , Min Hwan Kim
发明人： J. Gary Eden , Sung-Jin Park , Jin Hoon Cho , Seung Hoon Sung , Min Hwan Kim
IPC分类号： B01J19/08 , H01J37/32 , C25D11/02 , H01J11/18 , C25D11/12 , C25D11/18 , C25D11/26 , H01J17/16
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00842 , B01J2219/00853 , B01J2219/00891 , C01B13/115 , C25D11/02 , C25D11/022 , C25D11/026 , C25D11/12 , C25D11/18 , C25D11/26 , H01J11/18 , H01J11/22 , H01J11/34 , H01J17/066 , H01J17/16 , H01J37/32055 , H05H2001/2412 , H05H2001/2418
摘要： A microplasma device of the invention includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel upon application of suitable voltage and at least one of the electrodes is encapsulated within the thick metal oxide layer. Large arrays can be formed and are highly robust as lack of microcracks in the oxide avoid dielectric breakdown.
摘要翻译：本发明的微血管装置包括至少部分地限定在基本上由无缺氧氧化物组成的厚金属氧化物层内的微腔或微通道。电极相对于微腔或微通道布置，以在施加适当电压时刺激所述微腔或微通道中的等离子体产生，并且至少一个电极被封装在厚金属氧化物层内。可以形成大阵列，并且由于在氧化物中缺少微裂纹以避免电介质击穿，因此它们具有很强的鲁棒性。

5. 发明申请

US20130071297A1 ARRAYS OF METAL AND METAL OXIDE MICROPLASMA DEVICES WITH DEFECT FREE OXIDE 有权
标题翻译：金属和金属氧化物微孔器件与无氧氧化物的阵列
公开(公告)号：US20130071297A1
公开(公告)日：2013-03-21
申请号：US13527842
申请日：2012-06-20
申请人： J. Gary Eden , Sung-Jin Park , Jin Hoon Cho , Seung Hoon Sung , Min Hwan Kim
发明人： J. Gary Eden , Sung-Jin Park , Jin Hoon Cho , Seung Hoon Sung , Min Hwan Kim
IPC分类号： H01J37/32 , C25D11/02
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00842 , B01J2219/00853 , B01J2219/00891 , C01B13/115 , C25D11/02 , C25D11/022 , C25D11/026 , C25D11/12 , C25D11/18 , C25D11/26 , H01J11/18 , H01J11/22 , H01J11/34 , H01J17/066 , H01J17/16 , H01J37/32055 , H05H2001/2412 , H05H2001/2418
摘要： A microplasma device includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel. At least one of the electrodes is encapsulated within the thick metal oxide layer. A method of fabricating a microcavity or microchannel plasma device includes anodizing a flat or gently curved or gently sloped metal substrate to form a thick layer of metal oxide consisting essentially of nanopores that are perpendicular to the surface of the metal substrate. Material removal is conducted to remove metal oxide material to form a microcavity or microchannel in the thick layer of metal oxide.
摘要翻译：微型装置包括至少部分地在基本上由无缺陷氧化物组成的厚金属氧化物层内限定的微腔或微通道。电极相对于微腔或微通道布置以刺激所述微腔或微通道中的血浆产生。至少一个电极被封装在厚的金属氧化物层内。一种制造微腔或微通道等离子体装置的方法包括阳极氧化平坦或轻柔地弯曲或缓慢倾斜的金属基底，以形成基本上由纳米孔组成的厚层，金属氧化物垂直于金属基底的表面。进行材料去除以除去金属氧化物材料以在金属氧化物的厚层中形成微腔或微通道。

6. 发明申请

US20100072893A1 ELLIPSOIDAL MICROCAVITY PLASMA DEVICES AND POWDER BLASTING FORMATION 有权
标题翻译： ELLIPSOIDAL微波等离子体装置和粉末喷砂形成
公开(公告)号：US20100072893A1
公开(公告)日：2010-03-25
申请号：US12235796
申请日：2008-09-23
申请人： J. Gary Eden , Sung-Jin Park , Seung Hoon Sung
发明人： J. Gary Eden , Sung-Jin Park , Seung Hoon Sung
IPC分类号： H01J17/49 , H01J9/24
CPC分类号： H01J65/046 , H01J9/241 , H01J11/18
摘要： The invention provides microcavity plasma devices and arrays that are formed in layers that also seal the plasma medium, i.e., gas(es) and/or vapors. No separate packaging layers are required and additional packaging can be omitted if it is desirable to do so. A preferred microcavity plasma device includes first and second thin layers that are joined together. A half ellipsoid microcavity or plurality of half ellipsoid microcavities is defined in one or both of the first and second thin layers, and electrodes are arranged with respect to the microcavity to excite a plasma within said microcavities upon application of a predetermined voltage to the electrodes. A method for forming a microcavity plasma device having a plurality of half or full ellipsoid microcavities in one or both of first and second thin layers is also provided by a preferred embodiment. The method includes defining a pattern of protective polymer on the first thin layer. Powder blasting forms half ellipsoid microcavities in the first thin layer. The second thin layer is joined to the first layer. The patterning can be conducted lithographically or can be conduced with a simple screen.
摘要翻译：本发明提供了形成为也密封等离子体介质即气体和/或蒸汽的层的微腔等离子体装置和阵列。不需要单独的包装层，如果要这样做，可以省略额外的包装。优选的微腔等离子体装置包括连接在一起的第一和第二薄层。半椭圆形微腔或多个半椭圆形微腔被限定在第一和第二薄层中的一个或两个中，并且相对于微腔布置电极，以在对电极施加预定电压时在所述微腔内激发等离子体。优选实施例也提供了一种在第一和第二薄层中的一个或两个中形成具有多个半或全椭圆形微腔的微腔等离子体装置的方法。该方法包括在第一薄层上限定保护性聚合物的图案。粉末喷射在第一薄层中形成半椭圆形微腔。第二薄层连接到第一层。图案化可以光刻地进行，或者可以用简单的屏幕进行。

7. 发明授权

US08179032B2 Ellipsoidal microcavity plasma devices and powder blasting formation 有权
标题翻译：椭球微腔等离子体装置和粉末爆破形成
公开(公告)号：US08179032B2
公开(公告)日：2012-05-15
申请号：US12235796
申请日：2008-09-23
申请人： J. Gary Eden , Sung-Jin Park , Seung Hoon Sung
发明人： J. Gary Eden , Sung-Jin Park , Seung Hoon Sung
IPC分类号： H01J1/00 , H01J1/88
CPC分类号： H01J65/046 , H01J9/241 , H01J11/18
摘要： The invention provides microcavity plasma devices and arrays that are formed in layers that also seal the plasma medium, i.e., gas(es) and/or vapors. No separate packaging layers are required and additional packaging can be omitted if it is desirable to do so. A preferred microcavity plasma device includes first and second thin layers that are joined together. A half ellipsoid microcavity or plurality of half ellipsoid microcavities is defined in one or both of the first and second thin layers, and electrodes are arranged with respect to the microcavity to excite a plasma within said microcavities upon application of a predetermined voltage to the electrodes. A method for forming a microcavity plasma device having a plurality of half or full ellipsoid microcavities in one or both of first and second thin layers is also provided by a preferred embodiment. The method includes defining a pattern of protective polymer on the first thin layer. Powder blasting forms half ellipsoid microcavities in the first thin layer. The second thin layer is joined to the first layer. The patterning can be conducted lithographically or can be conduced with a simple screen.
摘要翻译：本发明提供了形成为也密封等离子体介质即气体和/或蒸汽的层的微腔等离子体装置和阵列。不需要单独的包装层，如果要这样做，可以省略额外的包装。优选的微腔等离子体装置包括连接在一起的第一和第二薄层。半椭圆形微腔或多个半椭圆形微腔被限定在第一和第二薄层中的一个或两个中，并且相对于微腔布置电极，以在对电极施加预定电压时在所述微腔内激发等离子体。优选实施例也提供了一种在第一和第二薄层中的一个或两个中形成具有多个半或全椭圆形微腔的微腔等离子体装置的方法。该方法包括在第一薄层上限定保护性聚合物的图案。粉末喷射在第一薄层中形成半椭圆形微腔。第二薄层连接到第一层。图案化可以光刻地进行，或者可以用简单的屏幕进行。

8. 发明申请

US20120104554A1 FLEXIBLE AND ON WAFER HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS 有权
标题翻译：柔性和等离子体混合等离子体半导体晶体管
公开(公告)号：US20120104554A1
公开(公告)日：2012-05-03
申请号：US13186401
申请日：2011-07-19
申请人： J. Gary Eden , Paul A. Tchertchian , Thomas J. Houlahan , Dane J. Sievers , Benben Li , Clark J. Wagner
发明人： J. Gary Eden , Paul A. Tchertchian , Thomas J. Houlahan , Dane J. Sievers , Benben Li , Clark J. Wagner
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L33/02 , H01J17/066 , H01J17/49 , H01L29/0821 , H01L29/7317
摘要： Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). Doped solid state semiconductor regions are in a thin flexible solid state substrate, and a flexible non conducting material defining a microcavity adjacent the semiconductor regions. The flexible non conducting material is bonded to the thin flexible solid state substrate, and at least one electrode is arranged with respect to said flexible substrate to generate a plasma in said microcavity, where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions. A preferred on-wafer device is formed on a single side of a silicon on insulator wafer and defines the collector (plasma cavity), emitter and base regions on a common side, which provides a simplified and easy to manufacture structure. A preferred embodiment array of flexible hybrid plasma transistors of the invention is an n+pn PBJT fabricated between two flexible sheets. One or both of the flexible sheets is transparent. The overall array structure is planar, and the planarized structure is sealed between the two flexible sheets. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.
摘要翻译：优选实施例柔性和晶片上混合等离子体半导体器件具有至少一个活性固态半导体区域; 以及在活性固态半导体区域附近产生的等离子体。掺杂的固态半导体区域处于薄的柔性固态衬底和限定邻近半导体区域的微腔的柔性非导电材料。柔性非导电材料结合到薄柔性固态衬底上，并且相对于所述柔性衬底布置至少一个电极，以在所述微腔中产生等离子体，其中所述等离子体将与所述柔性衬底配合影响或执行半导体功能固态半导体区域。优选的晶片上器件形成在绝缘体上硅晶片的单侧上，并且在公共侧上限定了集电体（等离子体腔），发射极和基极区域，这提供了简化且易于制造的结构。本发明的柔性混合等离子体晶体管的优选实施例阵列是在两个柔性片之间制造的n + pn PBJT。一个或两个柔性片是透明的。整个阵列结构是平面的，并且平坦化结构被密封在两个柔性片之间。在阵列中的等离子体收集器的操作期间发出可见光或紫外光。在优选实施例中，阵列中的各个PBJT用作全色显示器的子像素。

9. 发明申请

US20110037102A1 HYBRID PLASMA-SEMICONDUCTOR OPTOELECTRONIC DEVICES AND TRANSISTORS 有权
标题翻译：混合等离子体半导体光电器件和晶体管
公开(公告)号：US20110037102A1
公开(公告)日：2011-02-17
申请号：US12817551
申请日：2010-06-17
申请人： Paul A. Tchertchian , Clark J. Wagner , J. Gary Eden
发明人： Paul A. Tchertchian , Clark J. Wagner , J. Gary Eden
IPC分类号： H01L29/772 , H01L29/861
CPC分类号： H01L29/73 , H01J17/40 , H01L29/0821 , H01L29/1004 , H01L29/49 , H01L29/7311 , H01L29/772 , H01L29/78
摘要： The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.
摘要翻译：本发明提供了组合半导体和等离子体器件，包括晶体管和光电晶体管。优选的实施方案是混合等离子体半导体器件具有活性固态半导体区域和在活性固态半导体区域附近产生的等离子体。本发明的装置被称为混合等离子体半导体器件，其中等离子体，优选微质体与常规固态半导体器件区域配合，以影响或执行诸如由晶体管提供的半导体功能。本发明提供了具有以前不可用的特性的混合等离子体电子/光子器件系列。在本发明的晶体管器件中，低温辉光放电与混合晶体管是一体的。示例性的优选器件包括混合BJT和MOSFET器件。

10. 发明授权

US08816435B2 Flexible hybrid plasma-semiconductor transistors and arrays 有权
标题翻译：灵活的混合等离子半导体晶体管和阵列
公开(公告)号：US08816435B2
公开(公告)日：2014-08-26
申请号：US13186401
申请日：2011-07-19
申请人： J. Gary Eden , Paul A. Tchertchian , Thomas J. Houlahan , Dane J. Sievers , Benben Li , Clark J. Wagner
发明人： J. Gary Eden , Paul A. Tchertchian , Thomas J. Houlahan , Dane J. Sievers , Benben Li , Clark J. Wagner
IPC分类号： H01L27/12
CPC分类号： H01L33/02 , H01J17/066 , H01J17/49 , H01L29/0821 , H01L29/7317
摘要： Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). Doped solid state semiconductor regions are in a thin flexible solid state substrate, and a flexible non conducting material defining a microcavity adjacent the semiconductor regions. The flexible non conducting material is bonded to the thin flexible solid state substrate, and at least one electrode is arranged with respect to said flexible substrate to generate a plasma in said microcavity, where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions. A preferred on-wafer device is formed on a single side of a silicon on insulator wafer and defines the collector (plasma cavity), emitter and base regions on a common side, which provides a simplified and easy to manufacture structure. A preferred embodiment array of flexible hybrid plasma transistors of the invention is an n+pn PBJT fabricated between two flexible sheets. One or both of the flexible sheets is transparent. The overall array structure is planar, and the planarized structure is sealed between the two flexible sheets. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.
摘要翻译：优选实施例柔性和晶片上混合等离子体半导体器件具有至少一个活性固态半导体区域; 以及在活性固态半导体区域附近产生的等离子体。掺杂的固态半导体区域处于薄的柔性固态衬底和限定邻近半导体区域的微腔的柔性非导电材料。柔性非导电材料结合到薄柔性固态衬底上，并且相对于所述柔性衬底布置至少一个电极，以在所述微腔中产生等离子体，其中所述等离子体将与所述柔性衬底配合影响或执行半导体功能固态半导体区域。优选的晶片上器件形成在绝缘体上硅晶片的单侧上，并且在公共侧上限定了集电体（等离子体腔），发射极和基极区域，这提供了简化且易于制造的结构。本发明的柔性混合等离子体晶体管的优选实施例阵列是在两个柔性片之间制造的n + pn PBJT。一个或两个柔性片是透明的。整个阵列结构是平面的，并且平坦化结构被密封在两个柔性片之间。在阵列中的等离子体收集器的操作期间发出可见光或紫外光。在优选实施例中，阵列中的各个PBJT用作全色显示器的子像素。

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