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1. 发明授权

US06672779B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US06672779B2
公开(公告)日：2004-01-06
申请号：US10244755
申请日：2002-09-17
申请人： Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
发明人： Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
IPC分类号： G03D500
CPC分类号： H01L21/67161 , G07C9/00103 , G07C9/00111 , G08G3/00 , H01L21/67017 , H01L21/6715 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67742 , H01L21/67748 , H01L21/67754 , Y10S134/902 , Y10S414/14
摘要： Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.
摘要翻译：在第一主晶片传送部和第二主晶片传送部的周围配置具有10层的热处理单元部和各层的涂布处理单元部，并且在热处理单元部中，对基板所需的时间的影响通过在晶片W的温度由温度调节和转移装置调节的同时转移晶片W可以大大降低生产率下降的温度调节处理。

2. 发明授权

US06471422B2 Substrate processing apparatus and substrate processing method 有权
公开(公告)号：US06471422B2
公开(公告)日：2002-10-29
申请号：US10122333
申请日：2002-04-16
申请人： Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
发明人： Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
IPC分类号： G03D500
CPC分类号： H01L21/67161 , G07C9/00103 , G07C9/00111 , G08G3/00 , H01L21/67017 , H01L21/6715 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67742 , H01L21/67748 , H01L21/67754 , Y10S134/902 , Y10S414/14
摘要： Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

3. 发明授权

US06402401B1 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US06402401B1
公开(公告)日：2002-06-11
申请号：US09688140
申请日：2000-10-16
申请人： Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
发明人： Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
IPC分类号： G03D500
CPC分类号： H01L21/67161 , G07C9/00103 , G07C9/00111 , G08G3/00 , H01L21/67017 , H01L21/6715 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67742 , H01L21/67748 , H01L21/67754 , Y10S134/902 , Y10S414/14
摘要： Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.
摘要翻译：在第一主晶片传送部和第二主晶片传送部的周围配置具有10层的热处理单元部和各层的涂布处理单元部，并且在热处理单元部中，对基板所需的时间的影响通过在晶片W的温度由温度调节和转移装置调节的同时转移晶片W可以大大降低生产率下降的温度调节处理。

4. 发明授权

US08720873B2 Substrate holding device 有权
标题翻译：基板保持装置
公开(公告)号：US08720873B2
公开(公告)日：2014-05-13
申请号：US13418731
申请日：2012-03-13
申请人： Shinichi Hayashi , Suguru Enokida , Naruaki Iida , Hideki Kajiwara
发明人： Shinichi Hayashi , Suguru Enokida , Naruaki Iida , Hideki Kajiwara
IPC分类号： B25B1/00 , B24B5/00 , B24B29/00 , A47J45/00 , H01L21/683
CPC分类号： H01L21/6838
摘要： A substrate holding device including: a transfer arm body having a suction path; a pad body including a suction part having a suction surface and a suction port for holding the substrate by vacuum suction, and a cylindrical attachment part in which a suction hole communicating with the suction port is formed; a pad holding member provided with an insertion hole into which the attachment part of the pad body is loosely insertable and a communication path communicating with the suction hole and the suction path, and fixed to the transfer arm body; and an elastically deformable annular airtightness maintaining member with a circular cross-section interposed between an outer peripheral groove in an arc shape formed in the attachment part of the pad body and an inner peripheral groove in an arc shape formed at the insertion hole of the pad holding member.
摘要翻译：一种基板保持装置，包括：具有吸入路径的传送臂主体; 包括具有吸入面的吸引部和通过真空吸附保持基板的吸入口的垫体，以及形成有与吸入口连通的吸入孔的圆筒状的安装部，衬垫保持构件，其具有插入孔，所述垫体的安装部可松动地插入该插入孔中;以及连通路，其与所述吸入孔和所述吸入路径连通，并且固定到所述传送臂本体; 以及形成在所述垫主体的安装部分中的弧形外周槽和形成在所述垫的插入孔中的弧形的内周槽之间的具有圆形横截面的可弹性变形的环形气密保持构件控股成员

5. 发明授权

US07758340B2 Heating device and heating method 失效
标题翻译：加热装置及加热方式
公开(公告)号：US07758340B2
公开(公告)日：2010-07-20
申请号：US11617319
申请日：2006-12-28
申请人： Masami Akimoto , Shinichi Hayashi , Naruaki Iida , Hiroaki Inadomi
发明人： Masami Akimoto , Shinichi Hayashi , Naruaki Iida , Hiroaki Inadomi
IPC分类号： F27D3/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D5/0037 , F27D15/02 , H01L21/67109 , H01L21/67748 , H01L21/67784 , Y10S414/139
摘要： A heating device provided with a cooling plate and a heating plate is formed in a low height, and floats a substrate above the cooling plate and the heating plate and moves the substrate horizontally between the cooling plate and the heating plate by the pressure of a gas. A heating device 2 includes a cooling plate 3 provided with flotation gas spouting ports 3a, and a heating plate provided with flotation gas spouting ports. The flotation gas spouting ports 3a and 3b are arranged along a wafer moving passage and are formed so as to spout the gas obliquely upward toward a first end of the wafer moving passage on the side of the cooling plate. A pushing member 51 is brought into contact with a back part of a wafer W with respect to a direction in which the wafer W is moved to move the wafer W in a direction toward the heating plate 6 opposite a direction in which the flotation gas is spouted. The pushing member 51 is brought into contact with a back part of a wafer W with respect to a direction in which the wafer W is moved to move the wafer W in a direction toward the cooling plate 3 in which the flotation gas is spouted.
摘要翻译：设置有冷却板和加热板的加热装置形成为低高度，并且浮动冷却板和加热板上方的基板，并且通过气体的压力将基板水平地移动到冷却板和加热板之间。加热装置2包括具有浮选气体吐出口3a的冷却板3和设置有浮选气体吐出口的加热板。浮选气体喷出口3a，3b沿着晶片移动通道排列，形成为向冷却板侧的晶片移动通道的第一端倾斜向上喷出气体。推动构件51相对于晶片W移动的方向与晶片W的后部接触，以使晶片W朝向加热板6的方向移动，该方向与浮选气体的方向相反喷出推动构件51相对于晶片W移动的方向与晶片W的后部接触，以朝向其中喷出浮选气体的冷却板3的方向移动晶片W.

6. 发明申请

US20120235335A1 SUBSTRATE HOLDING DEVICE 有权
标题翻译：基板保持装置
公开(公告)号：US20120235335A1
公开(公告)日：2012-09-20
申请号：US13418731
申请日：2012-03-13
申请人： Shinichi Hayashi , Suguru Enokida , Naruaki Iida , Hideki Kajiwara
发明人： Shinichi Hayashi , Suguru Enokida , Naruaki Iida , Hideki Kajiwara
IPC分类号： H01L21/683 , B25B11/00
CPC分类号： H01L21/6838
摘要： The present invention is a substrate holding device including: a transfer arm body having a suction path; a pad body including a suction part having a suction surface and a suction port for holding the substrate by vacuum suction, and a cylindrical attachment part in which a suction hole communicating with the suction port is formed; a pad holding member provided with an insertion hole into which the attachment part of the pad body is loosely insertable and a communication path communicating with the suction hole and the suction path, and fixed to the transfer arm body; and an elastically deformable annular airtightness maintaining member with a circular cross-section interposed between an outer peripheral groove in an arc shape formed in the attachment part of the pad body and an inner peripheral groove in an arc shape formed at the insertion hole of the pad holding member.
摘要翻译：本发明是一种基板保持装置，包括：具有吸入路径的传送臂主体; 包括具有吸入面的吸引部和通过真空吸附保持基板的吸入口的垫体，以及形成有与吸入口连通的吸入孔的圆筒状的安装部，衬垫保持构件，其具有插入孔，所述垫体的安装部可松动地插入该插入孔中;以及连通路，其与所述吸入孔和所述吸入路径连通，并且固定到所述传送臂本体; 以及形成在所述垫主体的安装部分中的弧形外周槽和形成在所述垫的插入孔中的弧形的内周槽之间的具有圆形横截面的可弹性变形的环形气密保持构件控股成员

7. 发明申请

US20060165409A1 Coating and developing system and coating and developing method 有权
标题翻译：涂层开发系统及涂层开发方法
公开(公告)号：US20060165409A1
公开(公告)日：2006-07-27
申请号：US11335635
申请日：2006-01-20
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： G03D5/00
CPC分类号： H01L21/67184 , H01L21/00 , H01L21/6715 , H01L21/67178 , H01L21/6719
摘要： A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.
摘要翻译：涂覆显影系统包括：抗蚀剂膜形成单元块和层叠的抗反射膜形成单元块，以形成抗蚀剂膜和抗反射膜下面的抗反射膜以及在小空间中覆盖抗蚀剂膜的抗反射膜。涂层显影系统能够应对形成防反射膜的情况和没有形成任何抗反射膜的情况，并且需要简单的软件。成膜单位块，即TCT层B 3，COT层B 4和BCT层B 5以及显影单元块，即DEV层B 1和B 2，层叠在处理块S 在形成防反射膜的情况下选择性地使用TCT层B 3，COT层B 4和BCT层B 5以及未形成任何抗反射膜的情况。涂层和显影系统由简单的携带程序和简单的软件控制。

8. 发明授权

US08408158B2 Coating/developing device and method 有权
标题翻译：涂层/显影装置及方法
公开(公告)号：US08408158B2
公开(公告)日：2013-04-02
申请号：US11276662
申请日：2006-03-09
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： B05C11/10 , G03D15/02 , G03D5/04
CPC分类号： H01L21/67742 , G03F7/162 , H01L21/6715 , H01L21/67173 , H01L21/67178
摘要： A coating/developing device includes a processing block having a plurality of coating unit blocks stacked and a developing unit block stacked on the coating unit blocks. Each of the unit blocks is provided with a liquid processing unit for coating a liquid chemical on a substrate, a heating unit for heating the substrate, a cooling unit for cooling the substrate and a transfer unit for transferring the substrate between the units. The liquid processing unit is provided with a coating unit for coating a resist liquid on the substrate, a first bottom antireflection coating (BARC) forming unit for coating a liquid chemical for a BARC on the substrate before the resist liquid is coated thereon, and a second BARC forming unit for coating a liquid chemical for the BARC on the substrate after the resist liquid is coated thereon.
摘要翻译：涂覆/显影装置包括具有堆叠的多个涂布单元块的处理块和堆叠在涂布单元块上的显影单元块。每个单元块设置有用于在基板上涂覆液体化学品的液体处理单元，用于加热基板的加热单元，用于冷却基板的冷却单元和用于在单元之间转移基板的转移单元。液体处理单元设置有用于在基板上涂覆抗蚀剂液体的涂布单元，在其上涂覆抗蚀剂液体之前，在基板上涂布用于BARC的液体化学品的第一底部抗反射涂层（BARC）形成单元，以及第二BARC形成单元，用于在其上涂覆抗蚀剂液体之后，在基板上涂覆用于BARC的液体化学品。

9. 发明授权

US08302556B2 Coating and developing apparatus 有权
标题翻译：涂装显影装置
公开(公告)号：US08302556B2
公开(公告)日：2012-11-06
申请号：US12855534
申请日：2010-08-12
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： B05C5/02 , B05C11/02
CPC分类号： H01L21/67184 , H01L21/67173 , H01L21/67178 , H01L21/67207 , H01L21/67745
摘要： Provided is a coating and developing apparatus composed of an assembly of plural unit blocks. A first unit-block stack and a second unit-block stack are arranged at different positions with respect to front-and-rear direction. Unit blocks for development, each of which comprises plural processing units including a developing unit that performs developing process after exposure and a transfer device that transfers a substrate among the processing units, are arranged at the lowermost level. Unit blocks for application, or coating, each of which comprises plural processing units including a coating unit that performs application process before exposure and a transfer device that transfers a substrate among the processing units, are arranged above the unit blocks for development. Unit blocks for application are arranged in both the first and second unit-block stacks. Unit blocks for application which a wafer goes through are determined depending on the layering positional relationship between an antireflective film and a resist film. An exposed wafer goes only through the unit block for development without going through any one of the unit blocks for application.
摘要翻译：提供一种由多个单元块组成的涂层显影装置。第一单位块堆叠和第二单位块堆叠被布置在相对于前后方向的不同位置。用于显影的单元块，每个包括多个处理单元，包括执行曝光之后的显影处理的显影单元和在处理单元之间传送基板的转印装置布置在最下层。用于应用或涂布的单元块包括多个处理单元，其包括在曝光之前进行施加处理的涂覆单元和在处理单元之间传送基板的转印装置，布置在用于显影的单位块上方。用于应用的单元块被布置在第一和第二单元块堆叠中。根据防反射膜和抗蚀剂膜之间的层叠位置关系确定晶片通过的应用单元块。暴露的晶片仅通过单元块进行开发，而不经过用于应用的单元块中的任何一个。

10. 发明授权

US07241061B2 Coating and developing system and coating and developing method 有权
标题翻译：涂层开发系统及涂层开发方法
公开(公告)号：US07241061B2
公开(公告)日：2007-07-10
申请号：US11336990
申请日：2006-01-23
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： G03D5/00
CPC分类号： H01L21/6715 , H01L21/00 , H01L21/67178 , H01L21/67184 , H01L21/6719
摘要： A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.
摘要翻译：涂覆显影系统包括：抗蚀剂膜形成单元块和层叠的抗反射膜形成单元块，以形成抗蚀剂膜和抗反射膜下面的抗反射膜以及在小空间中覆盖抗蚀剂膜的抗反射膜。涂层显影系统能够应对形成防反射膜的情况和没有形成任何抗反射膜的情况，并且需要简单的软件。成膜单位块，即TCT层B 3，COT层B 4和BCT层B 5以及显影单元块，即DEV层B 1和B 2，层叠在处理块S 2。在形成防反射膜的情况下，选择性地使用TCT层B 3，COT层B 4和BCT层B 5以及未形成任何抗反射膜的情况。涂层和显影系统由简单的携带程序和简单的软件控制。

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