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    • 5. 发明申请
    • Vacuum Processing Apparatus
    • 真空处理设备
    • US20130168243A1
    • 2013-07-04
    • US13823192
    • 2011-09-07
    • Takayoshi HironoIsao Tada
    • Takayoshi HironoIsao Tada
    • C23C14/34
    • C23C14/34C23C14/50C23C14/562
    • Provided is a low-cost vacuum processing apparatus which enables the miniaturization of the apparatus and achieves good productivity. An elongated sheet base material is transported through a vacuum processing chamber, and predetermined processing is performed on the sheet base material in this vacuum processing chamber. The vacuum processing chamber is provided with a single processing unit, and has an auxiliary vacuum chamber provided in continuation with the vacuum processing chamber. The auxiliary vacuum chamber is provided with a feed roller and a take-up roller. The vacuum processing apparatus includes a pair of first roller units provided on opposite sides across the processing unit in the vacuum processing chamber. Each of the first roller units has multiple rollers disposed at regular distances. The rollers are deviated from each other in the axial direction and arranged in such a staggered manner that the sheet base material is helically wound around the rollers.
    • 提供一种低成本的真空处理装置,其能够使装置小型化并且实现良好的生产率。 细长的片材基材通过真空处理室输送,在该真空处理室中对片材基材进行规定的处理。 真空处理室设置有单个处理单元,并且具有与真空处理室连续设置的辅助真空室。 辅助真空室设有进料辊和卷取辊。 真空处理装置包括一对第一辊单元,设置在真空处理室中的处理单元的相对侧。 每个第一辊单元具有以规则距离布置的多个辊。 辊在轴向上彼此偏离并且以这样的交错方式布置,使得片状基材被螺旋缠绕在辊上。
    • 8. 发明授权
    • Winding type plasma CVD apparatus
    • 卷绕式等离子体CVD装置
    • US07896968B2
    • 2011-03-01
    • US11792810
    • 2006-05-10
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • C23C16/00C23F1/00H01L21/306
    • H01J37/3277B08B7/00C23C16/4405C23C16/46C23C16/5096C23C16/545H01J37/32009
    • The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film.A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33, 34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37). Self-cleaning can be carried out in the path of the deposition onto the film by closing the aperture of a mask (51) with a shutter (65), thereby preventing leakage of cleaning gas.
    • 本发明的目的是提供一种绕线式等离子体CVD装置,通过将反应气体均匀地供应到膜的沉积区域,可以使层的质量均匀,并且可以进行沉积部分的自清洁处理 在沉积到膜上的路径。 相对于膜的行进方向,膜(22)被支撑在布置在沉积部分(25)的上游侧和下游侧的一对可动辊(33,34)之间,然后,膜(22) 使其在沉积位置大致线性地移动。 因此,喷淋板(37)和膜(22)之间的距离保持恒定,并且使层的质量均匀。 薄膜通过金属带(40)加热,同时在薄膜背面行进。 可移动辊(33,34)从沉积位置上升到自清洁位置,并且膜(22)可以与喷淋板(37)分离。 通过用挡板(65)封闭掩模(51)的孔径,可以在沉积到膜上的路径中进行自清洁,从而防止清洁气体的泄漏。
    • 9. 发明申请
    • Winding Type Plasma Cvd Apparatus
    • 绕组式等离子体Cvd装置
    • US20080006206A1
    • 2008-01-10
    • US11792810
    • 2006-05-10
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • C23C16/505C23C16/44H01L21/205
    • H01J37/3277B08B7/00C23C16/4405C23C16/46C23C16/5096C23C16/545H01J37/32009
    • The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film. A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33,34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37). Self-cleaning can be carried out in the path of the deposition onto the film by closing the aperture of a mask (51) with a shutter (65), thereby preventing leakage of cleaning gas.
    • 本发明的目的是提供一种绕线式等离子体CVD装置,通过将反应气体均匀地供应到膜的沉积区域,可以使层的质量均匀,并且可以进行沉积部分的自清洁处理 在沉积到膜上的路径。 相对于膜的行进方向,膜(22)被支撑在布置在沉积部分(25)的上游侧和下游侧的一对可动辊(33,34)之间,然后,膜(22) 使其在沉积位置基本线性地行进。 因此,喷淋板(37)和膜(22)之间的距离保持恒定,并且使层的质量均匀。 薄膜通过金属带(40)加热,同时在薄膜背面行进。 可移动辊(33,34)从沉积位置上升到自清洁位置,并且膜(22)可以与喷淋板(37)分离。 通过用挡板(65)封闭掩模(51)的孔径,可以在沉积到膜上的路径中进行自清洁,从而防止清洁气体的泄漏。