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    • 3. 发明授权
    • Vacuum deposition apparatus of the winding type
    • 卷绕式真空沉积设备
    • US07670433B2
    • 2010-03-02
    • US11630761
    • 2006-02-14
    • Nobuhiro HayashiShin YokoiIsao TadaAtsushi Nakatsuka
    • Nobuhiro HayashiShin YokoiIsao TadaAtsushi Nakatsuka
    • C23C16/00C23C14/00
    • C23C14/042C23C14/54C23C14/562
    • The problem solved by this Invention is to provide a vacuum evaporation deposition method of the winding type and a vacuum evaporation deposition apparatus of the winding type which can form a metal film on a base film made of single layer plastic film without thermal deformation and with superior productivity. To solve the above problem, there are provided an electron beam irradiator 21 for irradiating an electron beam onto a film material 12 arranged between an unwinding roller 13 and a deposition source 16; an auxiliary roller 18 for guiding the film 12 in contact with the deposited metal layer and arranged between a can roller 14 and a winding roller 15; a DC bias power source 22 for applying a DC voltage between the auxiliary roller 18 and the can roller 14; electricity removing unit 23 for removing electricity from the film 12 and arranged between the can roller 14 and the winding roller 15. The electricity removing unit 23 is a plasma generating source of the DC dipolar discharge type wherein one of its electrodes is earthed.
    • 本发明解决的问题是提供一种绕线式真空蒸发沉积方法和一种可在无热变形的单层塑料薄膜制成的基膜上形成金属薄膜的卷绕型真空蒸镀装置, 生产率。 为了解决上述问题,提供了一种用于将电子束照射到布置在退绕辊13和沉积源16之间的薄膜材料12上的电子束照射器21; 用于引导与沉积的金属层接触并且布置在罐辊14和卷绕辊15之间的膜12的辅助辊18; 用于在辅助辊18和罐辊14之间施加DC电压的DC偏压电源22; 电力去除单元23,用于从膜12移除电力并且布置在罐辊14和卷绕辊15之间。除电单元23是其中一个电极接地的直流偶极放电类型的等离子体发生源。
    • 4. 发明申请
    • Vacuum Deposition Apparatus of the Winding Type
    • 绕线式真空沉积设备
    • US20070259105A1
    • 2007-11-08
    • US11630761
    • 2006-02-14
    • Nobuhiro HayashiShin YokiIsao TadaAtsushi Nakatsuka
    • Nobuhiro HayashiShin YokiIsao TadaAtsushi Nakatsuka
    • C23C14/56
    • C23C14/042C23C14/54C23C14/562
    • The problem solved by this Invention is to provide a vacuum evaporation deposition method of the winding type and a vacuum evaporation deposition apparatus of the winding type which can form a metal film on a base film made of single layer plastic film without thermal deformation and with superior productivity. To solve the above problem, there are provided an electron beam irradiator 21 for irradiating an electron beam onto a film material 12 arranged between an unwinding roller 13 and a deposition source 16; an auxiliary roller 18 for guiding the film 12 in contact with the deposited metal layer and arranged between a can roller 14 and a winding roller 15; a DC bias power source 22 for applying a DC voltage between the auxiliary roller 18 and the can roller 14; electricity removing unit 23 for removing electricity from the film 12 and arranged between the can roller 14 and the winding roller 15. The electricity removing unit 23 is a plasma generating source of the DC dipolar discharge type wherein one of its electrodes is earthed.
    • 本发明解决的问题是提供一种绕线式真空蒸发沉积方法和一种可在无热变形的单层塑料薄膜制成的基膜上形成金属薄膜的卷绕型真空蒸镀装置, 生产率。 为了解决上述问题,提供了一种用于将电子束照射到布置在退绕辊13和沉积源16之间的薄膜材料12上的电子束照射器21; 用于引导与沉积的金属层接触并且布置在罐辊14和卷绕辊15之间的膜12的辅助辊18; 用于在辅助辊18和罐辊14之间施加DC电压的DC偏压电源22; 电除去单元23,用于从薄膜12移除电力并且布置在罐辊14和卷绕辊15之间。 除电单元23是其中一个电极接地的直流偶极放电类型的等离子体发生源。
    • 5. 发明申请
    • Vacuum evaporation deposition method of the winding type and vacuum evaporation deposition apparatus of the same
    • 卷取式真空蒸镀法和真空蒸镀沉积装置相同
    • US20070134426A1
    • 2007-06-14
    • US10574715
    • 2004-11-12
    • Nobuhiro HayashiTakayoshi HironoIsao TadaAtsushi Nakatsuka
    • Nobuhiro HayashiTakayoshi HironoIsao TadaAtsushi Nakatsuka
    • B05D3/00C23C8/00H05B6/02C23C16/00B29C71/04
    • C23C14/562C23C14/022G11B5/85
    • The invention provides a vacuum evaporation deposition method of the winding type and a vacuum evaporation deposition apparatus of the winding type which can form a metal film on a base film made of a single layer of insulating material such as plastic film without thermal deformation, and which is superior in productivity. An electron beam irradiator 21 irradiates an electron beam onto an insulating material base film 12 before deposition of metal, and a DC bias power source 22 applies bias voltage between an auxiliary roller 18 for guiding the base film 12 with metal film deposited thereon and a can roller 14, whereby the base film 12 charged by the irradiation of the electron beam before the deposition of metal film, is made to be in close contact with the can roller 14. The base film 12 after deposition of metal film is made to be in close contact with the can roller 14 by the bias voltage applied between the auxiliary roller 18 connected electrically to the metal film and the can roller 14.
    • 本发明提供一种绕线式真空蒸发沉积方法和一种绕线式的真空蒸发沉积设备,该真空蒸镀沉积设备可以在由单层绝缘材料如塑料薄膜制成的基膜上形成金属膜而不会发生热变形, 生产力优越。 电子束照射器21在沉积金属之前将电子束照射到绝缘材料基膜12上,并且DC偏压电源22在用于引导基膜12的辅助辊18与其上沉积有金属膜的辅助辊18之间施加偏置电压, 辊14,由此通过在沉积金属膜之前通过电子束的照射而充电的基膜12被制成与罐辊14紧密接触。 通过施加在与金属膜电连接的辅助辊18和罐辊14之间的偏压施加金属膜沉积后的基膜12与罐辊14紧密接触。
    • 7. 发明授权
    • Winding type plasma CVD apparatus
    • 卷绕式等离子体CVD装置
    • US07896968B2
    • 2011-03-01
    • US11792810
    • 2006-05-10
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • C23C16/00C23F1/00H01L21/306
    • H01J37/3277B08B7/00C23C16/4405C23C16/46C23C16/5096C23C16/545H01J37/32009
    • The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film.A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33, 34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37). Self-cleaning can be carried out in the path of the deposition onto the film by closing the aperture of a mask (51) with a shutter (65), thereby preventing leakage of cleaning gas.
    • 本发明的目的是提供一种绕线式等离子体CVD装置,通过将反应气体均匀地供应到膜的沉积区域,可以使层的质量均匀,并且可以进行沉积部分的自清洁处理 在沉积到膜上的路径。 相对于膜的行进方向,膜(22)被支撑在布置在沉积部分(25)的上游侧和下游侧的一对可动辊(33,34)之间,然后,膜(22) 使其在沉积位置大致线性地移动。 因此,喷淋板(37)和膜(22)之间的距离保持恒定,并且使层的质量均匀。 薄膜通过金属带(40)加热,同时在薄膜背面行进。 可移动辊(33,34)从沉积位置上升到自清洁位置,并且膜(22)可以与喷淋板(37)分离。 通过用挡板(65)封闭掩模(51)的孔径,可以在沉积到膜上的路径中进行自清洁,从而防止清洁气体的泄漏。
    • 8. 发明申请
    • Winding Type Plasma Cvd Apparatus
    • 绕组式等离子体Cvd装置
    • US20080006206A1
    • 2008-01-10
    • US11792810
    • 2006-05-10
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • C23C16/505C23C16/44H01L21/205
    • H01J37/3277B08B7/00C23C16/4405C23C16/46C23C16/5096C23C16/545H01J37/32009
    • The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film. A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33,34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37). Self-cleaning can be carried out in the path of the deposition onto the film by closing the aperture of a mask (51) with a shutter (65), thereby preventing leakage of cleaning gas.
    • 本发明的目的是提供一种绕线式等离子体CVD装置,通过将反应气体均匀地供应到膜的沉积区域,可以使层的质量均匀,并且可以进行沉积部分的自清洁处理 在沉积到膜上的路径。 相对于膜的行进方向,膜(22)被支撑在布置在沉积部分(25)的上游侧和下游侧的一对可动辊(33,34)之间,然后,膜(22) 使其在沉积位置基本线性地行进。 因此,喷淋板(37)和膜(22)之间的距离保持恒定,并且使层的质量均匀。 薄膜通过金属带(40)加热,同时在薄膜背面行进。 可移动辊(33,34)从沉积位置上升到自清洁位置,并且膜(22)可以与喷淋板(37)分离。 通过用挡板(65)封闭掩模(51)的孔径,可以在沉积到膜上的路径中进行自清洁,从而防止清洁气体的泄漏。