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    • 9. 发明授权
    • Silicon single crystal ingot and wafer, growing apparatus and method thereof
    • 硅单晶锭和晶圆,生长装置及其方法
    • US07799130B2
    • 2010-09-21
    • US11460408
    • 2006-07-27
    • Young Ho HongMan Seok KwakIll-Soo ChoiHyon-Jong ChoHong Woo Lee
    • Young Ho HongMan Seok KwakIll-Soo ChoiHyon-Jong ChoHong Woo Lee
    • C30B15/00
    • C30B30/04C30B15/305C30B29/06Y10S117/917
    • A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.
    • 一种用于生长基于切克劳斯基法的硅单晶锭的硅单晶锭生长装置。硅单晶锭生长装置包括:室; 设置在所述室中并用于容纳硅熔体的坩埚; 设置在坩埚外侧并用于加热硅熔体的加热器; 用于使从硅熔体生长的硅单晶上升的拉伸单元; 以及设置在室外的多个磁性部件,用于对硅熔体非对称地施加磁场。这种结构可以使用不对称的上/下磁场均匀地控制硅单晶锭后部的氧浓度 另外,这种结构也可以通过非对称磁场来控制单晶生长产生的花朵现象,而不会有额外的热区(H / Z)替换,P / S下降等损失, 和SR方差。