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    • 1. 发明申请
    • METHOD, PHOTOLITHOGRAPHY METHOD, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING A PELLICLE FILM
    • 方法,光刻方法和使用薄膜形成半导体器件的方法
    • US20160048079A1
    • 2016-02-18
    • US14706980
    • 2015-05-08
    • Su-Young LEETae-Geun KIMJong-Gul DOH
    • Su-Young LEETae-Geun KIMJong-Gul DOH
    • G03F7/20H01L21/78
    • G03F7/2004G03F1/62
    • A pellicle for an EUV lithography may include a pellicle film, a supporting structure and a handling block. The pellicle film may have a first surface for orienting opposite to a mask, and a second surface opposite to the first surface and for orienting toward the mask. The pellicle film may allow the EUV, which may pass through the mask, to penetrate the pellicle film. The supporting structure may be arranged on the second surface of the pellicle film to support the pellicle film. The handling block may be arranged on the first surface of the pellicle film. The handling block may have an opening configured to expose the pellicle film. Thus, the pellicle may be handled using the thick handling block, not the thin pellicle film, so that the thin pellicle film may not be damaged. The pellicle may protect the mask from byproducts generated in the EUV lithography process so that the mask may not be contaminated.
    • 用于EUV光刻的防护薄膜组件可以包括防护薄膜,支撑结构和处理块。 防护薄膜可以具有用于与掩模相对定向的第一表面和与第一表面相对的用于朝向掩模定向的第二表面。 防护薄膜可以允许穿过掩模的EUV穿透防护薄膜。 支撑结构可以布置在防护薄膜的第二表面上以支撑防护薄膜。 处理块可以布置在防护薄膜的第一表面上。 处理块可以具有用于暴露防护薄膜的开口。 因此,可以使用厚的处理块而不是薄的防护薄膜来处理防护薄膜,使得薄的防护薄膜不会被损坏。 防护薄膜组件可以保护面罩免于在EUV光刻工艺中产生的副产物,使得面罩不被污染。